Patents by Inventor Hironobu Kawahara
Hironobu Kawahara has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7608162Abstract: A plasma processing apparatus includes a high-frequency power source for applying bias power to an electrode on which a substrate is disposed, an insulating layer formed on a surface of the electrode, a conductive material buried within the insulating layer, a feeder line connecting the high-frequency power source and the conductive material, a variable capacitor provided in the feeder line, and a direct current power source connected to the electrode at a position between the electrode and the high-frequency power source. One portion of the insulating layer where the conductive material is buried formed on an outer part of the electrode has a thickness which is greater than a thickness of another portion of the insulating layer where the conducting material is not buried and which extends from a central part of the electrode to the one portion of the insulating layer.Type: GrantFiled: October 2, 2007Date of Patent: October 27, 2009Assignee: Hitachi, Ltd.Inventors: Yutaka Ohmoto, Hironobu Kawahara, Ken Yoshioka, Kazue Takahashi, Saburou Kanai
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Patent number: 7354525Abstract: For a surface processing apparatus using a plasma, a mixed gas of a fluorine-containing gas and an oxygen gas is used as an ashing gas. A mixed gas of an oxygen gas and a fluorine-containing gas is introduced as an ashing gas. This allows the following steps to be carried out at the same time: removal of the silicon component left on the mask material surface and the mask material in the area including the cured mask layer and the like; and the removal of the carbon-based, and silicon-based deposits deposited on the inner wall of a vacuum chamber. In addition, the removal of the mask material is performed under low pressure, and in the subsequent step to a step using a mixed gas of a fluorine-containing gas and an oxygen gas, a plasma of only an oxygen gas is used. As a result, it becomes possible to reduce the damages (etching) to the film layer after etching.Type: GrantFiled: September 14, 2005Date of Patent: April 8, 2008Assignee: Hitachi High-Technologies CorporationInventors: Masatoshi Oyama, Yoshiyuki Ohta, Tsuyoshi Yoshida, Hironobu Kawahara
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Publication number: 20080023145Abstract: A plasma processing apparatus includes a high-frequency power source for applying bias power to an electrode on which a substrate is disposed, an insulating layer formed on a surface of the electrode, a conductive material buried within the insulating layer, a feeder line connecting the high-frequency power source and the conductive material, a variable capacitor provided in the feeder line, and a direct current power source connected to the electrode at a position between the electrode and the high-frequency power source. One portion of the insulating layer where the conductive material is buried formed on an outer part of the electrode has a thickness which is greater than a thickness of another portion of the insulating layer where the conducting material is not buried and which extends from a central part of the electrode to the one portion of the insulating layer.Type: ApplicationFiled: October 2, 2007Publication date: January 31, 2008Inventors: Yutaka Ohmoto, Hironobu Kawahara, Ken Yoshioka, Kazue Takahashi, Saburou Kanai
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Patent number: 7288166Abstract: A plasma processing apparatus for manufacturing a semiconductor device includes an apparatus for applying bias powers to a substrate to be processed and a material adjacent to the substrate, an apparatus for adjusting a feeding impedance for the bias power applied to the material, and an apparatus for adjusting feeding impedances for the bias powers to a plurality of positions on the substrate so as to make electrons projected to the substrate from the plasma uniform within a surface of the substrate.Type: GrantFiled: September 17, 2003Date of Patent: October 30, 2007Assignee: Hitachi, Ltd.Inventors: Yutaka Ohmoto, Hironobu Kawahara, Ken Yoshioka, Kazue Takahashi, Saburou Kanai
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Publication number: 20070037292Abstract: Disclosed is apparatus for treating samples, and a method of using the apparatus. The apparatus includes processing apparatus (a) for treating the samples (e.g. plasma etching apparatus), (b) for removing residual corrosive compounds formed by the sample treatment, (c) for wet-processing of the samples and (d) for dry-processing the samples. A plurality of wet-processing treatments of a sample can be performed. The wet-processing apparatus can include a plurality of wet-processing stations. The samples can either be passed in series through the plurality of wet-processing stations, or can be passed in parallel through the wet-processing stations.Type: ApplicationFiled: October 24, 2006Publication date: February 15, 2007Inventors: Masayuki Kojima, Yoshimi Torii, Michimasa Hunabashi, Kazuyuki Suko, Takashi Yamada, Keizo Kuroiwa, Kazuo Nojiri, Yoshinao Kawasaki, Yoshiaki Sato, Ryooji Fukuyama, Hironobu Kawahara
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Patent number: 7132293Abstract: Disclosed is apparatus for treating samples, and a method of using the apparatus. The apparatus includes processing apparatus (a) for treating the samples (e.g., plasma etching apparatus), (b) for removing residual corrosive compounds formed by the sample treatment, (c) for wet-processing of the samples and (d) for dry-processing the samples. A plurality of wet-processing treatments of a sample can be performed. The wet-processing apparatus can include a plurality of wet-processing stations. The samples can either be passed in series through the plurality of wet-processing stations, or can be passed in parallel through the wet-processing stations.Type: GrantFiled: May 27, 2004Date of Patent: November 7, 2006Assignee: Hitachi, Ltd.Inventors: Yoshimi Torii, Kazuo Nojiri, Yoshinao Kawasaki, Yoshiaki Sato, Ryooji Fukuyama, Hironobu Kawahara
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Patent number: 6989228Abstract: Disclosed is apparatus for treating samples, and a method of using the apparatus. The apparatus includes processing apparatus (a) for treating the samples (e.g., plasma etching apparatus), (b) for removing residual corrosive compounds formed by the sample treatment, (c) for wet-processing of the samples and (d) for dry-processing the samples. A plurality of wet-processing treatments of a sample can be performed. The wet-processing apparatus can include a plurality of wet-processing stations. The samples can either be passed in series through the plurality of wet-processing stations, or can be passed in parallel through the wet-processing stations.Type: GrantFiled: July 31, 2001Date of Patent: January 24, 2006Assignee: Hitachi, LTDInventors: Masayuki Kojima, Yoshimi Torii, Michimasa Hunabashi, Kazuyuki Suko, Takashi Yamada, Keizo Kuroiwa, Kazuo Nojiri, Yoshinao Kawasaki, Yoshiaki Sato, Ryooji Fukuyama, Hironobu Kawahara
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Publication number: 20060000804Abstract: For a surface processing apparatus using a plasma, a mixed gas of a fluorine-containing gas and an oxygen gas is used as an ashing gas. A mixed gas of an oxygen gas and a fluorine-containing gas is introduced as an ashing gas. This allows the following steps to be carried out at the same time: removal of the silicon component left on the mask material surface and the mask material in the area including the cured mask layer and the like; and the removal of the carbon-based, and silicon-based deposits deposited on the inner wall of a vacuum chamber. In addition, the removal of the mask material is performed under low pressure, and in the subsequent step to a step using a mixed gas of a fluorine-containing gas and an oxygen gas, a plasma of only an oxygen gas is used. As a result, it becomes possible to reduce the damages (etching) to the film layer after etching.Type: ApplicationFiled: September 14, 2005Publication date: January 5, 2006Inventors: Masatoshi Oyama, Yoshiyuki Ohta, Tsuyoshi Yoshida, Hironobu Kawahara
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Patent number: 6867144Abstract: A plasma etching method of a wafer includes the steps of electrostatically attracting the wafer which has a gate oxide film onto a wafer mounting electrode in a vacuum processing chamber, introducing a mixed gas into the vacuum processing chamber on the basis of an etching recipe, generating a magnetic field inside the vacuum processing chamber, generating a plasma in the vacuum processing chamber, applying a bias power to the wafer to accelerate ions in the plasma toward the wafer, and setting an impedance of a portion of the wafer mounting electrode which corresponds to an outer periphery of the wafer as viewed from a bias power supply to a value which is greater than that of a center portion of the wafer mounting electrode using an electrode arranged within the wafer mounting electrode at a position corresponding to the outer periphery of the wafer and formed under an insulating film for electrostatically attracting the wafer.Type: GrantFiled: May 6, 2002Date of Patent: March 15, 2005Assignee: Hitachi, Ltd.Inventors: Yutaka Ohmoto, Hironobu Kawahara, Ken Yoshioka, Kazue Takahashi, Saburou Kanai
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Publication number: 20040219687Abstract: Disclosed is apparatus for treating samples, and a method of using the apparatus. The apparatus includes processing apparatus (a) for treating the samples (e.g., plasma etching apparatus), (b) for removing residual corrosive compounds formed by the sample treatment, (c) for wet-processing of the samples and (d) for dry-processing the samples. A plurality of wet-processing treatments of a sample can be performed. The wet-processing apparatus can include a plurality of wet-processing stations. The samples can either be passed in series through the plurality of wet-processing stations, or can be passed in parallel through the wet-processing stations.Type: ApplicationFiled: May 27, 2004Publication date: November 4, 2004Inventors: Yoshimi Torii, Kazuo Nojiri, Yoshinao Kawasaki, Yoshiaki Sato, Ryooji Fukuyama, Hironobu Kawahara
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Publication number: 20040171273Abstract: For a surface processing apparatus using a plasma, a mixed gas of a fluorine-containing gas and an oxygen gas is used as an ashing gas. A mixed gas of an oxygen gas and a fluorine-containing gas is introduced as an ashing gas. This allows the following steps to be carried out at the same time: removal of the silicon component left on the mask material surface and the mask material in the area including the cured mask layer and the like; and the removal of the carbon-based, and silicon-based deposits deposited on the inner wall of a vacuum chamber. In addition, the removal of the mask material is performed under low pressure, and in the subsequent step to a step using a mixed gas of a fluorine-containing gas and an oxygen gas, a plasma of only an oxygen gas is used. As a result, it becomes possible to reduce the damages (etching) to the film layer after etching.Type: ApplicationFiled: February 28, 2003Publication date: September 2, 2004Inventors: Masatoshi Oyama, Yoshiyuki Ohta, Tsuyoshi Yoshida, Hironobu Kawahara
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Publication number: 20040149385Abstract: A plasma processing apparatus for manufacturing a semiconductor device includes an apparatus for applying bias powers to a substrate to be processed and a material adjacent to the substrate, an apparatus for adjusting a feeding impedance for the bias power applied to the material, and an apparatus for adjusting feeding impedances for the bias powers to a plurality of positions on the substrate so as to make electrons projected to the substrate from the plasma uniform within a surface of the substrate.Type: ApplicationFiled: September 17, 2003Publication date: August 5, 2004Inventors: Yutaka Ohmoto, Hironobu Kawahara, Ken Yoshioka, Kazue Takahashi, Saburou Kanai
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Patent number: 6759338Abstract: A plasma processing apparatus and a plasma processing method for processing a wafer of a large diameter to produce a high speed semiconductor circuit at a high yield are provided. A thickness of an insulating film formed on a surface of an electrode opposing to a substrate to be processed is locally changed, an electrode is provided in the insulating film and a bypassed bias current is supplied to the electrode. An electrode is provided in an insulating film on a surface of the electrode opposing to a material adjacent to the substrate to be processed and a bypassed bias current is supplied to the electrode.Type: GrantFiled: March 1, 2001Date of Patent: July 6, 2004Assignee: Hitachi, Ltd.Inventors: Yutaka Ohmoto, Hironobu Kawahara, Ken Yoshioka, Kazue Takahashi, Saburou Kanai
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Patent number: 6755935Abstract: A plasma processing apparatus has a vacuum vessel, a processing chamber arranged in the vacuum vessel and supplied with gas, a support electrode arranged in the processing chamber to support an object to be processed, a radio frequency providing unit for supplying a radio frequency in UHF or VHF band, and a magnetic field generating unit for generating a magnetic field in the processing chamber, wherein the radio frequency providing unit includes an antenna having a groove or step formed in its surface opposing the process object, whereby plasma of high density and high uniformity can be generated in a wide parameter region.Type: GrantFiled: February 27, 2001Date of Patent: June 29, 2004Assignee: Hitachi, Ltd.Inventors: Hideyuki Kazumi, Ichiro Sasaki, Kenji Maeda, Tsutomu Tetsuka, Hironobu Kawahara
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Publication number: 20040040933Abstract: A method of processing a wafer, incorporating a processing chamber for subjecting a semiconductor wafer to a plasma process, a generator for generating plasma in the processing chamber, and a wafer stage for carrying thereon the semiconductor wafer so as to subject the semiconductor wafer to the plasma process, wherein the wafer stage has an attaching part for attachment to the wafer processing apparatus, which is commonly used among a plurality of wafer stages, and is configured to cope with a change of the wafer stage into a wafer stage having a different function, and a high frequency voltage for applying a bias voltage to the semiconductor wafer, and a D.C. voltage for providing a potential difference between the semiconductor wafer and the wafer stage are applied to the wafer stage.Type: ApplicationFiled: September 5, 2003Publication date: March 4, 2004Inventors: Seiichiro Kanno, Hironobu Kawahara, Mitsuru Suehiro, Saburou Kanai, Toshio Masuda
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Patent number: 6677167Abstract: A wafer processing apparatus comprising a wafer stage, wherein a semiconductor wafer is mounted on the wafer stage so as to process the semiconductor wafer, wherein a holding mechanism of the wafer stage is commonly used for a plurality of wafer stages, and accordingly, the wafer stage can be changed into a wafer stage having a different function so as to process the semiconductor wafer.Type: GrantFiled: March 4, 2002Date of Patent: January 13, 2004Assignee: Hitachi High-Technologies CorporationInventors: Seiichiro Kanno, Hironobu Kawahara, Mitsuru Suehiro, Saburou Kanai, Toshio Masuda
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Patent number: 6656846Abstract: Disclosed is apparatus for treating samples, and a method of using the apparatus. The apparatus includes processing apparatus (a) for treating the samples (e.g., plasma etching apparatus), (b) for removing residual corrosive compounds formed by the sample treatment, (c) for wet-processing of the samples and (d) for dry-processing the samples. A plurality of wet-processing treatments of a sample can be performed. The wet-processing apparatus can include a plurality of wet-processing stations. The samples can either be passed in series through the plurality of wet-processing stations, or can be passed in parallel through the wet-processing stations.Type: GrantFiled: May 3, 2001Date of Patent: December 2, 2003Assignee: Hitachi, Ltd.Inventors: Masayuki Kojima, Yoshimi Torii, Michimasa Hunabashi, Kazuyuki Suko, Takashi Yamada, Keizo Kuroiwa, Kazuo Nojiri, Yoshiaki Sato, Ryooji Fukuyama, Hironobu Kawahara
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Patent number: 6649021Abstract: A plasma processing apparatus processes high-speed semiconductor circuits by using plasma with an increased yield. The plasma processing apparatus has a vacuum vessel including an exhaust device, a starting material gas supplying device, an electrode for installing a workpiece (wafer) and a device for applying radio frequency power to the wafer. This apparatus converts the starting material gas to plasma inside the vacuum vessel and plasma-processes a wafer surface, wherein an insulating film is interposed between the electrode for installing the wafer and the wafer and has a conductive material at a part thereof, and the conductive material is electrically grounded through an impedance regulating circuit.Type: GrantFiled: July 20, 2001Date of Patent: November 18, 2003Assignee: Hitachi, Ltd.Inventors: Yutaka Ohmoto, Hironobu Kawahara, Ken Yoshioka, Kazue Takahashi, Saburou Kanai
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Patent number: 6624084Abstract: In plasma processing equipment having a vacuum processing chamber, a plasma generation means, a stage for loading a wafer to be processed in the vacuum processing chamber, an opposing electrode having an area almost equal to or wider than the aforementioned wafer which is installed opposite to the stage, and a bias power source for applying a high frequency bias to the wafer, a current path correction means is provided for correcting the current path part in the neighborhood of the outer periphery of the wafer among the high frequency current paths produced by the high frequency bias so as to be directed toward the wafer opposing surface of the opposing electrode.Type: GrantFiled: December 22, 2000Date of Patent: September 23, 2003Assignee: Hitachi, Ltd.Inventors: Kenji Maeda, Yutaka Omoto, Ichiro Sasaki, Hironobu Kawahara
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Publication number: 20030164226Abstract: A wafer processing apparatus comprising a wafer stage, wherein a semiconductor wafer is mounted on the wafer stage so as to process the semiconductor wafer, wherein a holding mechanism of the wafer stage is commonly used for a plurality of wafer stages, and accordingly, the wafer stage can be changed into a wafer stage having a different function so as to process the semiconductor wafer.Type: ApplicationFiled: March 4, 2002Publication date: September 4, 2003Inventors: Seiichiro Kanno, Hironobu Kawahara, Mitsuru Suehiro, Saburou Kanai, Toshio Masuda