Abstract: A biological information detection apparatus includes: a camera; a frame image analysis unit that detects a region including pixels having a predetermined skin color, as a skin color region, from a frame image taken using the camera, and detects a signal corresponding to a light wavelength from an image signal of each pixel included in the skin color region, as skin color wavelength data; a skin color wavelength difference detection unit that calculates an average value of differences of the skin color wavelength data from predetermined reference wavelength data for the pixels included in the skin color region, and acquires the average value as average wavelength difference data; a pulse wave signal detection unit that detects a signal obtained by smoothing the average wavelength difference data detected in time series, as a pulse wave signal.

Abstract: Disclosed is a humidity sensing element that includes an insulation section made of an insulating material, an application electrode to which a voltage is applied, and an output electrode which outputs a voltage signal corresponding to an electrical current flowing through an electrical path via water molecules adhering to a surface of the insulating material in response to the voltage applied to the application electrode. A distance between the application electrode and the output electrode is equal to or greater than a predetermined value, and/or a total sum of lengths of portions where the application electrode and the output electrode face each other is less than a predetermined value.

Abstract: In order to provide a moisture detection element, a gas detection device, and a breath inspection system that are compact and have high response performance, the moisture detection element includes an insulating section made of an insulating material, an application electrode to which an voltage is applied, and a detection electrode that detects a voltage signal corresponding to a current flowing through an electrical path via water molecules adsorbed on the insulating section by the voltage applied to the application electrode.

Abstract: A defective photovoltaic cell module is identified without disconnection in a photovoltaic cell string. As a typical embodiment, in a photovoltaic power generation inspect ion system in a photovoltaic power generation system having a structure in which a plurality of photovoltaic cell strings are connected in parallel, the photovoltaic power generation system detecting a defective module among a plurality of modules included in a defective string, the photovoltaic power generation inspection system includes: a current detector that measures an output current of a photovoltaic cell string without disconnection; and a monitor unit that estimates a defective module based on change in a plurality of output currents each measured by the current detector while the photovoltaic cell modules included in the defective string are sequentially shielded from light by a light shielding member.

Abstract: It is an object to prevent impersonation in breath measurement by using a portable device. After breath is introduced into a breath introduction inlet 11 of a breath introduction device 1, a first image group is acquired by continuously capturing images over a predetermined period, and after drinking determination based on the introduced breath from the breath introduction inlet 11, the portable device is provided with an imaging device 11 that acquires a second image by capturing an image again and outputs whether or not each image in the first image group and the second image are the images of the same person.

Abstract: Disclosed is a technique for suppressing fluctuation of device characteristics in thin film transistors using an oxide semiconductor film as a channel layer. In a thin film transistor using an oxide semiconductor film as a channel layer (4), said channel layer (4) is configured from an oxide semiconductor having as main materials a zinc oxide and tin oxide with introduced group IV elements or group V elements, wherein the ratio (A/B) of the impurity concentration (A) of the group IV elements or group V elements contained in the channel layer (4) and the impurity concentration (B) of the group III elements contained in the channel layer (4) satisfies A/B?1.0, and ideally A/B?0.3.

Abstract: There are provided an oxide semiconductor material, capable of attaining stability of a threshold voltage (Vth) (threshold voltage shift amount ?Vth within a range of ±3 V in PDS and NBIS) and field-effect mobility of 5 cm2/Vs or more necessary for the operation of an OLED display device. An oxide semiconductor target in which an oxide semiconductor material with one or more of oxides of W, Ta, and Hf of 5d transition metal added each by 0.07 to 3.8 at %, 0.5 to 4.7 at %, and 0.32 to 6.4 at % to a semiconductor material with Zn—Sn—O as a main ingredient is sintered; a semiconductor channel layer formed by using the target, and an oxide semiconductor material for TFT protective film, as well as a semiconductor device having the same.

Abstract: There are provided an oxide semiconductor material, capable of attaining stability of a threshold voltage (Vth) (threshold voltage shift amount ?Vth within a range of ±3 V in PDS and NBIS) and field-effect mobility of 5 cm2/Vs or more necessary for the operation of an OLED display device. An oxide semiconductor target in which an oxide semiconductor material with one or more of oxides of W, Ta, and Hf of 5d transition metal added each by 0.07 to 3.8 at %, 0.5 to 4.7 at %, and 0.32 to 6.4 at % to a semiconductor material with Zn—Sn—O as a main ingredient is sintered; a semiconductor channel layer formed by using the target, and an oxide semiconductor material for TFT protective film, as well as a semiconductor device having the same.

Abstract: There are provided an oxide semiconductor material, capable of attaining stability of a threshold voltage (Vth) (threshold voltage shift amount ?Vth within a range of ±3 V in PDS and NBIS) and field-effect mobility of 5 cm2/Vs or more necessary for the operation of an OLED display device. An oxide semiconductor target in which an oxide semiconductor material with one or more of oxides of W, Ta, and Hf of 5d transition metal added each by 0.07 to 3.8 at %, 0.5 to 4.7 at %, and 0.32 to 6.4 at % to a semiconductor material with Zn—Sn—O as a main ingredient is sintered; a semiconductor channel layer formed by using the target, and an oxide semiconductor material for TFT protective film, as well as a semiconductor device having the same.

Abstract: A technique capable of forming an oxide semiconductor target with a high quality in a low cost is provided. In a step of manufacturing zinc tin oxide (ZTO target) used in manufacturing an oxide semiconductor forming a channel layer of a thin-film transistor, by purposely adding the group IV element (C, Si, or Ge) or the group V element (N, P, or As) to a raw material, excessive carriers caused by the group III element (Al) mixed in the step of manufacturing the ZTO target are suppressed, and a thin-film transistor having good current (Id)-voltage (Vg) characteristics is achieved.

Abstract: Disclosed is an oxide semiconductor layer (13) which forms a channel for a thin-film transistor and which includes at least In and oxygen and one or more types of elements from among Zn, Cd, Al, Ga, Si, Sn, Ce, and Ge. A high concentration region (13d) is disposed on one section of the oxide semiconductor layer (13), whereby said region has a maximum In concentration 30 at %; or higher than other regions on the oxide semiconductor layer (13). The film thickness of the oxide semiconductor layer (13) is 100 nm max., and the film thickness of the high concentration region (13d) is 20 nm max. or, preferably, 6 nm max. This enables a thin-film transistor with a sub-threshold slope of 100 mV/decade max., a high on-current, and a high field effect mobility to be achieved.

Abstract: In a TFT that adopts an oxide semiconductor as an active layer and has a resistance layer interposed between the active layer and one of a source and drain electrode, while Vth close to 0 V and a small off current are sustained, an on-current is increased. In a thin-film transistor including a gate electrode, a gate insulating film, a semiconductor layer, a source electrode, and a drain electrode, the semiconductor layer that links the source electrode and drain electrode is made of a metal oxide. The semiconductor layer includes three regions of first, second, and third regions. The first region is connected with the source electrode, the third region is connected with the drain electrode, and the second region is connected between the first region and third region. The resistivities of the three regions have the relationship of the first region>the second region>the third region.

Abstract: There are provided an oxide semiconductor material, capable of attaining stability of a threshold voltage (Vth) (threshold voltage shift amount ?Vth within a range of ±3 V in PDS and NBIS) and field-effect mobility of 5 cm2/Vs or more necessary for the operation of an OLED display device. An oxide semiconductor target in which an oxide semiconductor material with one or more of oxides of W, Ta, and Hf of 5d transition metal added each by 0.07 to 3.8 at %, 0.5 to 4.7 at %, and 0.32 to 6.4 at % to a semiconductor material with Zn—Sn—O as a main ingredient is sintered; a semiconductor channel layer formed by using the target, and an oxide semiconductor material for TFT protective film, as well as a semiconductor device having the same.

Abstract: Disclosed is a technique for suppressing fluctuation of device characteristics in thin film transistors using an oxide semiconductor film as a channel layer. In a thin film transistor using an oxide semiconductor film as a channel layer (4), said channel layer (4) is configured from an oxide semiconductor having as main materials a zinc oxide and tin oxide with introduced group IV elements or group V elements, wherein the ratio (A/B) of the impurity concentration (A) of the group IV elements or group V elements contained in the channel layer (4) and the impurity concentration (B) of the group III elements contained in the channel layer (4) satisfies A/B?1.0, and ideally A/B?0.3.

Abstract: Disclosed is an oxide semiconductor layer (13) which forms a channel for a thin-film transistor and which includes at least In and oxygen and one or more types of elements from among Zn, Cd, Al, Ga, Si, Sn, Ce, and Ge. A high concentration region (13d) is disposed on one section of the oxide semiconductor layer (13), whereby said region has a maximum In concentration 30 at %; or higher than other regions on the oxide semiconductor layer (13). The film thickness of the oxide semiconductor layer (13) is 100 nm max., and the film thickness of the high concentration region (13d) is 20 nm max. or, preferably, 6 nm max. This enables a thin-film transistor with a sub-threshold slope of 100 mV/decade max., a high on-current, and a high field effect mobility to be achieved.

Abstract: In a TFT that adopts an oxide semiconductor as an active layer and has a resistance layer interposed between the active layer and one of a source and drain electrode, while Vth close to 0 V and a small off current are sustained, an on-current is increased. In a thin-film transistor including a gate electrode, a gate insulating film, a semiconductor layer, a source electrode, and a drain electrode, the semiconductor layer that links the source electrode and drain electrode is made of a metal oxide. The semiconductor layer includes three regions of first, second, and third regions. The first region is connected with the source electrode, the third region is connected with the drain electrode, and the second region is connected between the first region and third region. The resistivities of the three regions have the relationship of the first region>the second region>the third region.

Abstract: In a manufacturing method for thin film transistors, the following procedure is taken: a sacrifice layer comprised of a metal oxide semiconductor is formed over a conductive layer comprised of a metal oxide semiconductor; a metal film is formed over the sacrifice layer; the metal film is processed by dry etching; and the portion of the sacrifice layer exposed by this dry etching is subjected to wet etching.

Abstract: A phenomenon of change of a contact resistance between an oxide semiconductor and a metal depending on an oxygen content ratio in introduced gas upon depositing an oxide semiconductor film made of indium gallium zinc oxide, zinc tin oxide, or others in an oxide semiconductor thin-film transistor. A contact layer is formed with an oxygen content ratio of 10% or higher in a region from a surface, where the metal and the oxide semiconductor are contacted, down to at least 3 nm deep in depth direction, and a region to be a main channel layer is further formed with an oxygen content ratio of 10% or lower, so that a multilayered structure is formed, and both of ohmic characteristics to the electrode metal and reliability such as the suppression of threshold potential shift are achieved.

Abstract: A superconducting junction element has a lower electrode formed by a superconductor layer, a barrier layer provided on a portion of a surface of the lower electrode, an upper electrode formed by a superconductor and covering the barrier layer, and a superconducting junction formed by the lower electrode, the barrier layer and the upper electrode. A critical current density of the superconducting junction is controlled based on an area of the lower electrode.