Abstract: A method of manufacturing a semiconductor device includes forming a first insulating film over an underlying film by plasma polymerization of cyclic siloxane, and forming a second insulating film on the first insulating film by plasma polymerization of the cyclic siloxane continuously, after forming the first insulating film. The deposition rate of the first insulating film is slower than the deposition rate of the second insulating film.

Abstract: A treatment instrument for an endoscope includes: an operation portion; a cylindrical sheath that is connected to the operation portion and that also comprises an insertion portion; an axial electrode that is protruded from and retracted into a distal end opening portion of the sheath by an operation of the operation portion; and a distal end electrode portion that is provided at a distal end portion of the axial electrode; wherein a tapered portion is formed at a distal end portion of the sheath, the tapered portion being in a tapered shape that a distal end side of the distal end portion is narrower than a proximal end side of the distal end portion.

Abstract: A thread forming tap having a complete thread portion, formed with a predetermined back taper with that decreases rotational torque during tapping work, which reduces load acting on first complete protruding portions, formed at an extreme leading end of the complete thread portion, and thereby suppressing degradation in service life of the tool due to wear.

Abstract: In a method for producing a semiconductor device, two or more kinds of organic siloxane compound materials each having a cyclic SiO structure as a main skeleton and having different structures are mixed and thereafter vaporized. Alternatively, those two or more kinds of organic siloxane compound materials are mixed and vaporized simultaneously to produce a vaporized gas. Then, the vaporized gas is transported to a reaction furnace together with a carrier gas. Then, in the reaction furnace, a porous insulating layer is formed by the plasma CVD method or the plasma polymerization method using the vaporized gas.

Abstract: An objective of this invention is to provide an anode material for a secondary battery for forming a secondary battery exhibiting a higher initial charge/discharge efficiency, a higher energy density and excellent cycle properties; an anode for a secondary battery; and a secondary battery therewith. An anode material for a secondary battery according to this invention comprises an Si oxide and at least one noble metal. Furthermore, the anode material for a secondary battery of this invention preferably contains lithium metal. Alternatively, an anode material for a secondary battery of this invention may comprise a lithium silicate and at least one noble metal. An anode comprising the anode material for a secondary battery of this invention comprises an activator layer being film-structure or particulate.

Abstract: Characteristics of a low-k insulating film grown on a substrate is modulated in the thickness-wise direction, by varying the ratio of high-frequency input and low-frequency input used for inducing plasma in the course of forming the film, to thereby improve the adhesion strength while keeping the dielectric constant at a low level, wherein the high-frequency input and the low-frequency input for inducing plasma are applied from a single electrode, while elevating the level of low-frequency input at least either at the start of formation or at the end of formation of the insulating film, as compared with the input level in residual time zone.

Abstract: The present invention provides a multilayer wiring technology by which high adhesiveness and high insulation reliability between wirings are obtained, while maintaining effective low capacitance between wirings. A semiconductor device is characterized in that a first insulating film is an insulating film formed of at least one layer which contains a siloxane structure containing silicon, oxygen and carbon; the siloxane structure in the inner part of the first insulating film contains a larger number of carbon atoms than the number of silicon atoms; and a modified layer which containing a smaller number of carbon atoms and a larger number of oxygen atoms per unit volume than the inner part of the first insulating film is formed on at least one of an interface between the first insulating film and the metal and an interface between the first insulating film and a second insulating film.

Abstract: A sealing device which comprises a slinger fixedly fitted to the rotary side member, a core member fixedly fitted to the stationary side member, and an elastic sealing member fixed to the core member and having a seal lip which elastically and slidably contacts the slinger. The slinger comprises a fitting cylindrical portion to be fitted into the rotary side member, a brim portion extending its radial direction at one end of its outside relative to a sealed portion of the fitting cylindrical portion, and a rotary side fixing member fixed to the brim portion. Further, the slinger is made in such a manner that an adhesive layer is formed on its whole surface including a contacting side surface where the seal lip contacts by applying adhesive agent thereon, then the fixing member is integrally fixed thereto, thereafter the adhesive layer is partially removed only in the contacting side surface.

Abstract: A thread forming tap has a full thread portion and a leading portion contiguous with the full thread portion and reducing in diameter toward its tip. The full thread and leading portions are provided with external thread on which lobes and recesses are alternately formed. When ? represents an angle around a tool center line toward a thread forming side, the shape of the lobe varies along a quadratic curve relative to angle ? so that relief amount increases toward inflection point angle ?. However, in a rough plastic deformation section where angle ? is greater than inflection point angle ? and exceeds the working region, the shape varies along an Archimedean curve with clearance angle ?1 so that the relief amount increases linearly relative to angle ?, and a margin section is substantially zero or within a range where angle ? is less than or equal to 1°.

Abstract: An encoder-equipped sealing device includes two seal members arranged to face opposite each other and each having a reinforcing ring with an L-shaped cross section. Each of the reinforcing rings has a cylindrical portion and a flange portion extending from one end of the cylindrical portion in a direction perpendicular to the cylindrical portion. One seal member includes an elastic seal formed in such a manner as to be supported by the reinforcing ring of this seal member, with the elastic seal extending toward the other seal member such that a seal portion is formed between the elastic seal and the other seal member. The other seal member includes an encoder on a side of the flange portion of the other seal member that is opposite a side facing the one seal member. The one seal member includes an elastic element formed in such a manner as to be supported by the flange portion of this seal member.

Abstract: The present invention provides a multilayer wiring technology by which high adhesiveness and high insulation reliability between wirings are obtained, while maintaining effective low capacitance between wirings. A semiconductor device is characterized in that a first insulating film is an insulating film formed of at least one layer which contains a siloxane structure containing silicon, oxygen and carbon; the siloxane structure in the inner part of the first insulating film contains a larger number of carbon atoms than the number of silicon atoms; and a modified layer which containing a smaller number of carbon atoms and a larger number of oxygen atoms per unit volume than the inner part of the first insulating film is formed on at least one of an interface between the first insulating film and the metal and an interface between the first insulating film and a second insulating film.

Abstract: The present invention provides a multilayer wiring technology by which high adhesiveness and high insulation reliability between wirings are obtained, while maintaining effective low capacitance between wirings. A semiconductor device is characterized in that a first insulating film is an insulating film formed of at least one layer which contains a siloxane structure containing silicon, oxygen and carbon; the siloxane structure in the inner part of the first insulating film contains a larger number of carbon atoms than the number of silicon atoms; and a modified layer which containing a smaller number of carbon atoms and a larger number of oxygen atoms per unit volume than the inner part of the first insulating film is formed on at least one of an interface between the first insulating film and the metal and an interface between the first insulating film and a second insulating film.

Abstract: A secondary battery includes an anode for a secondary battery, a cathode which absorbs and discharges lithium ions, and an electrolyte which is placed between the anode for the secondary battery and the cathode. The anode for the secondary battery includes an anode active material layer which absorbs and discharges lithium ions, the anode active material layer including a first layer including carbon as a chief ingredient, and a second layer including at least one first element having a theoretical capacity greater than a theoretical capacity of graphite, and at least one second element which has a theoretical capacity equal to or less than the theoretical capacity of graphite. The second layer includes particles, and the particles include the first element and the second element.

Abstract: The present invention provides a method for collecting/transporting a medical capsule by holding the medical capsule using an endoscopic apparatus comprising: an endoscope having an inserting section to be inserted in a body cavity with a distal end including an observation section to observe a subject and an suction opening; a sucking device in communicated with the suction opening; and a generally cylindrical hood member which is attached to the distal end of the inserting section, the method comprising: a sucking step of making an inside of the hood member vacuum by actuating the sucking device to suck the inside of the hood member through the suction opening; and a holding step of attracting and holding the medical capsule to the hood member sucked by the sucking step.

Abstract: In a method for producing a semiconductor device, two or more kinds of organic siloxane compound materials each having a cyclic SiO structure as a main skeleton and having different structures are mixed and thereafter vaporized. Alternatively, those two or more kinds of organic siloxane compound materials are mixed and vaporized simultaneously to produce a vaporized gas. Then, the vaporized gas is transported to a reaction furnace together with a carrier gas. Then, in the reaction furnace, a porous insulating layer is formed by the plasma CVD method or the plasma polymerization method using the vaporized gas.

Abstract: Characteristics of a low-k insulating film grown on a substrate is modulated in the thickness-wise direction, by varying the ratio of high-frequency input and low-frequency input used for inducing plasma in the course of forming the film, to thereby improve the adhesion strength while keeping the dielectric constant at a low level, wherein the high-frequency input and the low-frequency input for inducing plasma are applied from a single electrode, while elevating the level of low-frequency input at least either at the start of formation or at the end of formation of the insulating film, as compared with the input level in the residual time zone, thereby the insulating film is formed to have a close-adhesion layer in at least either one of the end portions of the film in the thickness-wise direction, by the contribution of both of the high-frequency input and the low-frequency input, and to have a low-k insulating film in the residual portion of the film, by lowering or zeroing the level of the low-frequency i

Abstract: A method of manufacturing a semiconductor device includes forming a first insulating film over an underlying film by plasma polymerization of cyclic siloxane, and forming a second insulating film on the first insulating film by plasma polymerization of the cyclic siloxane continuously, after forming the first insulating film. The deposition rate of the first insulating film is slower than the deposition rate of the second insulating film.

Abstract: A light emitting diode array in which, when viewed from the above, the shape of an almost square light emitting diode is square-chamfered or round-chamfered at the corners thereof in order to minimize light leakage at a reverse mesa surface to allow an electrode layer to surround the three directions of a light emitting unit, and part in the vicinity of the corner of the reverse mesa surface is extended up to a substrate unit to cover it. Accordingly, the light emitting diode array minimized in light leakage at the reverse mesa surface can be provided.

Abstract: A thread forming tap having a complete thread portion, formed with a predetermined back taper with that decreases rotational torque during tapping work, which reduces load acting on first complete protruding portions, formed at an extreme leading end of the complete thread portion, and thereby suppressing degradation in service life of the tool due to wear or the like

Abstract: A hand operation portion of an endoscope is held by an endoscope holder of a holding device, and an insertion auxiliary member is held by an auxiliary member holder. The endoscope holder and the auxiliary member holder are slidably supported along a guide rail on a stage, and linearly moved toward a mouth of a patient.