Abstract: An ultrasonic operation system includes a handpiece having an ultrasonic transducer, which treats a living tissue using ultrasonic oscillations. The system includes a driving signal oscillator for producing a driving signal for driving the ultrasonic transducer and supplying the driving signal to the handpiece; a sweep circuit for sweeping a frequency of the driving signal; a data transfer circuit for transferring start frequency data to the sweep circuit to start sweeping the frequency of the driving signal; a detection circuit for detecting a resonance frequency of the handpiece based on the driving signal of which the frequency has been swept by the sweep circuit; and a chase lock loop (PLL) circuit for locking the frequency of an output current onto the resonance frequency; and, a switch for switching between the PLL circuit and the sweep circuit according to a detection result from the detection circuit.

Abstract: A calculus treatment apparatus includes first and second probe which transmit first and second mechanical energy to a distal end side thereof and pulverize a calculus by the first and second mechanical energy, and first and second mechanical energy generating devices which are arranged on a proximal end side of the first and second probes and generate the first and second mechanical energy. A probe arrangement structure is provided in which the first probe and the second probe are arranged substantially coaxially or concentrically.

Abstract: An ultrasonic driving apparatus consists mainly of a digital oscillatory circuit, an amplifier, a detection circuit, a phase difference detection circuit, a register, a data transfer circuit, and a switching circuit. The digital oscillatory circuit is used to drive an ultrasonic transducer at the resonance frequency of the ultrasonic transducer. The amplifier amplifies a driving signal output from the digital oscillatory circuit. The detection circuit detects the phase &thgr;v of an applied voltage and the phase &thgr;i of an induced current from the driving signal applied to the ultrasonic transducer via the amplifier. The phase difference detection circuit detects a difference between the phases &thgr;v and &thgr;i. The register holds digital frequency data with which a frequency at which the digital oscillatory circuit is oscillated is determined, and changes the digital frequency data. The data transfer circuit transfers the digital frequency data to the register.

Abstract: In a plasma processing apparatus of this invention, a ring-like segment magnet is formed around an upper portion of a chamber so a magnetic field is generated around a processing space. The segment magnet can be rotated by a rotating mechanism in the circumferential direction of the chamber. A magnetic field is generated around the processing space by a magnetic field generating means. That position where a substrate to be processed is present is set in a substantial non-magnetic field state, so charge-up damage is prevented. Due to the plasma confining effect of this magnetic field, the plasma processing rate of the substrate to be processed is set to be almost equal between the edge and center of the substrate to be processed, thereby making the processing rate uniform. A pivoting means is provided so as to alter the gap between the magnets or directions of magnetization thereof.

Abstract: An ultrasonic driving apparatus consists mainly of a digital oscillatory circuit, an amplifier, a detection circuit, a phase difference detection circuit, a register, a data transfer circuit, and a switching circuit. The digital oscillatory circuit is used to drive an ultrasonic transducer at the resonance frequency of the ultrasonic transducer. The amplifier amplifies a driving signal output from the digital oscillatory circuit. The detection circuit detects the phase &thgr;v of an applied voltage and the phase &thgr;i of an induced current from the driving signal applied to the ultrasonic transducer via the amplifier. The phase difference detection circuit detects a difference between the phases &thgr;v and &thgr;i. The register holds digital frequency data with which a frequency at which the digital oscillatory circuit is oscillated is determined, and changes the digital frequency data. The data transfer circuit transfers the digital frequency data to the register.

Abstract: An ultrasonic calculus treatment apparatus includes a longitudinal-vibration piezoelectric oscillator for vibrating in the axial direction of an ultrasonic transmitting member and a torsional-vibration piezoelectric oscillator for vibrating about the axial direction, and further includes driving circuits for driving the piezoelectric oscillators at respective resonance frequencies and a mode selection switch for permitting the oscillators to vibrate independently or in combination, so that lithotripsy can be performed effectively in accordance with the size of a calculus or a function of an operating tool.

Abstract: An ultrasonic driving apparatus consists mainly of a digital oscillatory circuit, an amplifier, a detection circuit, a phase difference detection circuit, a register, a data transfer circuit, and a switching circuit. The digital oscillatory circuit is used to drive an ultrasonic transducer at the resonance frequency of the ultrasonic transducer. The amplifier amplifies a driving signal output from the digital oscillatory circuit. The detection circuit detects the phase &thgr;v of an applied voltage and the phase &thgr;i of an induced current from the driving signal applied to the ultrasonic transducer via the amplifier. The phase difference detection circuit detects a difference between the phases &thgr;v and &thgr;i. The register holds digital frequency data with which a frequency at which the digital oscillatory circuit is oscillated is determined, and changes the digital frequency data. The data transfer circuit transfers the digital frequency data to the register.

Abstract: A plasma process device includes a process vessel having a plasma generating area therein, a susceptor provided in the process vessel for supporting a substrate having a process surface, and a gas inlet means for introducing a process gas into the plasma generating area. A dipole ring magnet is arranged around the outer periphery of the process vessel, for generating a magnetic field having a magnetic line of force in the plasma generating area, so that a plasma of the process gas is generated in the plasma generating area. The dipole ring magnet has a plurality of anisotropic segment magnets arranged on an oval track, which are cylindrical permanent magnets having the same shape and size and magnetized in the diameter direction.

Abstract: A load-lock unit is disposed between first and second atmospheres, for storing a wafer transferred from the first atmosphere, and which is blocked off from the first atmosphere, thereafter being set in an atmosphere at least substantially similar to the second atmosphere, and opened so as to communicate with the second atmosphere in order to transfer the wafer to the second atmosphere. The load-lock unit includes a load-lock chamber, a holding mechanism, disposed in the load-lock chamber for holding the wafer, a rotating mechanism for rotating the wafer held by the holding mechanism, and an error detecting mechanism for detecting a positional error of the center of the wafer and an orientation error of the wafer on the basis of data obtained by radiating light on the wafer which is rotating.

Abstract: A load-lock unit is disposed between first and second atmospheres, stores a wafer transferred from the first atmosphere, is blocked off from the first atmosphere, is thereafter set in the same atmosphere as or a similar atmosphere to the second atmosphere, and is opened to communicate with the second atmosphere in order to transfer the wafer to the second atmosphere. The load-lock unit includes a load-lock chamber, a storing device, disposed in the load-lock chamber, for storing a plurality of wafers vertically at a gap, a holding mechanism for holding one of the plurality of wafers stored in the storing device, a rotating mechanism for rotating the wafer held by the holding mechanism, and an error detecting device for detecting the positional error of the center of the wafer and an orientation error of the wafer on the basis of data obtained by radiating light on the wafer which is rotating.

Abstract: A system for implanting ions into a semiconductor wafer includes an ion source device, a mass spectrometer, an accelerating tube and a process chamber arranged in this order. A rotating disk is arranged in the process chamber to support a plurality of wafers thereon. A Faraday cup is arranged in the process chamber, corresponding to an ion beam shooting position. The Faraday cup serves to shut up therein secondary electrons and ions generated from the wafer at the time of ion implantation for measuring the amount of ions implanted. A suppressor electrode is provided to suppress the flow-out of the secondary electrons from the Faraday cup. The suppressor electrode comprises a cylindrical body made of carbon and an SiC film formed on the inner face of the cylindrical body. The SiC film serves as a resistance of the electrode surface for preventing rapid discharge from being caused at the electrode surface.

Abstract: A load-lock unit is disposed between first and second atmospheres, for storing a wafer transferred from the first atmosphere, and which is blocked off from the first atmosphere, thereafter being set in an atmosphere at least substantially similar to the second atmosphere, and opened so as to communicate with the second atmosphere in order to transfer the wafer to the second atmosphere. The load-lock unit includes a load-lock chamber, a holding mechanism, disposed in the load-lock chamber for holding the wafer, a rotating mechanism for rotating the wafer held by the holding mechanism, and an error detecting mechanism for detecting a positional error of the center of the wafer and an orientation error of the wafer on the basis of data obtained by radiating light on the wafer which is rotating.