Abstract: There is provided an actinic ray-sensitive or radiation-sensitive resin composition comprising: (A) a resin containing a repeating unit represented by the first specific formula and a repeating unit represented by the second specific formula, wherein the content of the repeating unit represented by the first specific formula is 35 mol % or more based on all repeating units in the resin (A), a resist film formed using the actinic ray-sensitive or radiation-sensitive resin composition.

Abstract: Provided is a semiconductor element having a semiconductor layer and an insulating layer adjacent to the semiconductor layer, in which the insulating layer is formed of a crosslinked product of a polymer compound having a repeating unit (IA) represented by the following General Formula (IA) and a repeating unit (IB) represented by the following General Formula (IB). In General Formula (IA), R1a represents a hydrogen atom, a halogen atom, or an alkyl group. L1a and L2a each independently represent a single bond or a linking group. X represents a crosslinkable group. m2a represents an integer of 1 to 5, and in a case where m2a is 2 or more, m2a number of X's may be the same or different from each other, m1a represents an integer of 1 to 5, and in a case where m1a is 2 or more, m1a number of (-L2a-(X)m2a)'s may be the same or different from each other. In General Formula (IB), R1b represents a hydrogen atom, a halogen atom, or an alkyl group.

Abstract: There is provided an actinic ray-sensitive or radiation-sensitive resin composition containing a compound represented by the following formula (1) or (2), and the formula (1) and (2) are defined as herein, and a resist film comprising the actinic ray-sensitive or radiation-sensitive resin composition, and a pattern forming method comprising a step of exposing the resist film, and a step of developing the exposed film, and a method for manufacturing an electronic device, comprising the pattern forming method, and an electronic device manufactured by the manufacturing method of an electronic device.

Abstract: An organic thin-film transistor including: a gate electrode, an organic semiconductor layer, a gate insulating layer, a source electrode, and a drain electrode on a substrate, in which the organic semiconductor layer includes an organic semiconductor and a resin (C) having one or more groups selected from the group consisting of a group having fluorine atoms, a group having silicon atoms, an alkyl group having one or more carbon atoms or having two or more carbon atoms in a case of forming an alkoxycarbonyl group, a cycloalkyl group, an aralkyl group, an aryloxycarbonyl group, an aromatic ring group substituted with at least one alkyl group, and an aromatic ring group substituted with at least one cycloalkyl group; and a method for manufacturing an organic thin-film transistor including: applying a coating solution which contains the organic semiconductor and the resin (C) and causing the resin (C) to be unevenly distributed.

Abstract: Provided are an organic thin-film transistor including: a gate electrode, an organic semiconductor layer, a gate insulating layer, and a source electrode and a drain electrode on a substrate, in which the organic semiconductor layer contains an organic semiconductor and a block copolymer, and the block copolymer is at least one selected from specific block copolymers such as a styrene-(meth)acrylate ester block copolymer and may be phase-separated, and a method for manufacturing an organic thin-film transistor, which includes an organic semiconductor containing a phase-separated block copolymer, including: applying a coating solution which contains an organic semiconductor and a block copolymer for film formation; and heating the obtained film so that the block copolymer is self-assembled.

Abstract: Provided is a thin film transistor including a gate electrode, a semiconductor layer, a gate insulating layer provided between the gate electrode and the semiconductor layer and formed of an organic polymer compound, and a source electrode and a drain electrode provided in contact with the semiconductor layer and connected via the semiconductor layer, on a substrate, in which the content of metals selected from Mg, Ca, Ba, Al, Sn, Pb, Cr, Mn, Fe, Ni, Cu, Zn, and Ag in the gate insulating layer is 10 ppb to 1 ppm in terms of total amount, or the content of non-metal ionic materials selected from halogen ions, sulfate ions, nitrate ions, and phosphate ions is 1 ppm to 100 ppm in terms of total amount.

Abstract: There is provided an actinic ray-sensitive or radiation-sensitive resin composition containing a resin (P) having a repeating unit represented by the following Formula (A) and having at least two of a repeating unit represented by the following Formula (B), a repeating unit represented by the following Formula (C), a repeating unit represented by the following Formula (D) and a repeating unit represented by the following Formula (E).

Abstract: A pattern-forming method includes in this order: step (1) of forming a film with an electron beam-sensitive or extreme ultraviolet radiation-sensitive resin composition that contains (A) a resin having an acid-decomposable repeating unit and capable of decreasing a solubility of the resin (A) in a developer containing an organic solvent by an action of an acid, (B) a compound capable of generating an acid upon irradiation with an electron beam or extreme ultraviolet radiation, (C) a resin having one or more groups selected from the specific group as defined in the specification and (D) a solvent; step (2) of exposing the film with an electron beam or extreme ultraviolet radiation; and step (4) of developing the film with a developer containing an organic solvent after the exposing to form a negative pattern.

Abstract: There are provided a pattern forming method in which, in self-organization lithography using a graphoepitaxy method, high miniaturization of patterns can be achieved with high quality and high efficiency by a pattern forming method including (i) a step of forming a block copolymer layer containing a specific first block copolymer or a specific second block copolymer on a specific substrate, (ii) a step of phase-separating the block copolymer layer, and (iii) a step of selectively removing at least one phase of a plurality of phases of the block copolymer layer, an electronic device manufacturing method using the pattern forming method and the electronic device, and a block copolymer used in the pattern forming method and the production method thereof.

Abstract: There is provided an actinic ray-sensitive or radiation-sensitive resin composition containing a resin (P) having a repeating unit represented by the following Formula (A) and having at least two of a repeating unit represented by the following Formula (B), a repeating unit represented by the following Formula (C), a repeating unit represented by the following Formula (D) and a repeating unit represented by the following Formula (E).

Abstract: There is provided a pattern forming method including (1) forming a film by an actinic ray-sensitive or radiation-sensitive resin composition containing a resin (A) capable of increasing the polarity by the action of an acid so that a solubility thereof in a developer containing an organic solvent is decreased, (2) exposing the film, (3) developing the film by a developer including an organic solvent to form a negative pattern having a space part obtained by removing a part of the film and a residual film part which is not removed by the developing, (4) forming a resist film for reversing a pattern, on the negative pattern, so as to be embedded in the space part in the negative pattern, and (5) reversing the negative pattern into a positive pattern by removing the residual film part in the negative pattern by using an alkaline wet etching liquid.

Abstract: There is provided an actinic ray-sensitive or radiation-sensitive resin composition comprising: (A) a resin having a repeating unit represented by the specific formula and a group capable of decomposing by an action of an acid to produce a polar group; and an ionic compound represented by the specific formula, and a resist film comprising the actinic ray-sensitive or radiation-sensitive resin composition.

Abstract: There is provided a pattern forming method, including: (a) forming a film by using an electron beam-sensitive or extreme ultraviolet ray-sensitive resin composition containing a resin (A) having a repeating unit represented by Formula (1-0) and a repeating unit represented by Formula (1-2); (b) exposing the film by using an electron beam or extreme ultraviolet ray; and (c) developing the exposed film by using a developer containing an organic solvent to form a negative pattern, wherein a content of the repeating unit represented by Formula (1-0) is 45 mol % or more based on a whole repeating units in the resin (A).

Abstract: There is provided a pattern forming method comprising (1) a step of forming a film by using an electron beam-sensitive or extreme ultraviolet-sensitive resin composition, (2) a step of exposing the film by using an electron beam or an extreme ultraviolet ray, and (3) a step of developing the exposed film by using an organic solvent-containing developer, wherein the electron beam-sensitive or extreme ultraviolet-sensitive resin composition contains (A) a resin containing (R) a repeating unit having a structural moiety capable of decomposing upon irradiation with an electron beam or an extreme ultraviolet ray to generate an acid, and (B) a solvent.

Abstract: According to one embodiment, an actinic-ray- or radiation-sensitive resin composition includes a compound (A) that contains a structure (P) containing at least one phenolic hydroxyl group and a structure (Q) containing at least one phenolic hydroxyl group whose hydrogen atom is replaced by a group (S) with a cyclic structure containing an acid crosslinking group, characterized in that the group (S) with a cyclic structure containing an acid crosslinking group is a group with a polycyclic structure or a group with a cyclic structure containing a hydroxymethyl group and/or an alkoxymethyl group.

Abstract: There are provided a pattern formation method, including: (1) forming a film using an active light-sensitive or radiation-sensitive resin composition; (2) exposing the film to active light or radiation; and (3) developing the exposed film using a developer including an organic solvent, wherein the active light-sensitive or radiation-sensitive resin composition contains a resin (A) having specific repeating units, and a crosslinking agent (C).

Abstract: There are provided a pattern forming method which satisfies high sensitivity, high resolving power at the time of isolated line pattern formation, a good pattern shape, and high dry etching resistance at the same time, an actinic ray sensitive or radiation sensitive resin composition and a resist film which are provided thereto, a method for manufacturing an electronic device using these, and an electronic device by using a pattern forming method including step (1) of forming a film using the actinic ray sensitive or radiation sensitive resin composition containing a resin (Ab) having a repeating unit represented by the specific General Formula (Ab1), step (2) of exposing the film, and step (4) of performing development using a developer including an organic solvent after exposing and of forming a negative type pattern, in this order.

Abstract: There are provided A pattern formation method, including: (1) forming a film using an active light-sensitive or radiation-sensitive resin composition; (2) exposing the film to active light or radiation; and (3) developing the exposed film using a developer including an organic solvent, wherein the active light-sensitive or radiation-sensitive resin composition contains a resin (A) having specific 3 repeating units.

Abstract: Provided is an actinic-ray- or radiation-sensitive resin composition including a resin (Aa) containing at least one repeating unit (Aa1) derived from monomers of general formula (aa1-1) below and at least one repeating unit (Aa2) derived from monomers of general formula (aa2-1) below and comprising a resin (Ab) that when acted on by an acid, changes its alkali solubility.

Abstract: An actinic ray-sensitive or radiation-sensitive resin composition in the present invention contains a nitrogen-containing compound (N) which is represented by the following general formula (N1): wherein, in the general formula (N1), X represents a group including a hetero atom; L represents a single bond or an alkylene group; R2 represents a substituent, in the case where a plurality of R2's are present, they may be the same as or different from each other and a plurality of R2's may be bonded to each other to form a ring; R3 represents a hydrogen atom or a substituent; and n represents an integer of 0 to 4.