Abstract: It is an object of the present invention to achieve a semiconductor device capable of preventing circuit malfunctions caused by noise without decreasing an integration degree of the circuit by making a space between signal interconnections wider and inserting a shield or a shield layer between the signal interconnections. The semiconductor device has a multilayer interconnection structure wherein three or more interconnection layers are stacked on a silicon semiconductor substrate, and comprises: a first signal line which is formed with a (N−1)-th interconnection layer and comprises a latch circuit; a second signal line which is formed with a (N+1)-th interconnection layer and is arranged so as to cross the first signal line or partially overlap thereover; and a power supply interconnection serving as a shield interconnection which is formed with an N-th interconnection layer in a portion directly beneath the first signal line and the second signal line.

Abstract: In a signal read circuit including a plurality of circuit rows each having a charge amplifier connected to a photoelectric conversion element PD and a CDS circuit 2S for performing correlated double sampling for an output from the charge amplifier, a dummy circuit row DMY having the same configuration as a circuit row SLT is connected in parallel with this circuit row SLT. By calculating the difference between these circuit rows connected in parallel, offset variations generated in the two circuit rows SLT and DMY can be removed.

Abstract: In a level shifter, in the case where the amplitude voltage of an input signal (i.e., a first power voltage VDDL) input to an input terminal is changed to be higher and the amplitude voltage of an output signal (i.e., a second power voltage VDDH) output from an output terminal is changed to be lower, a fall delay time of the signal output from the output terminal tends to be longer than a rise delay time of the signal. However, an inverted input signal obtained by an inverter is input to a level shifting unit and also to the gate of an N-type transistor, and therefore, the N-type transistor is turned on at the fall of the input signal input to the input terminal, so as to supply a current based on the second power voltage VDDH to an output node of the level shifting unit for assisting the shift into H level performed in the level shifting unit.

Abstract: An amount of charges consonant with the intensity of the light entering photodiodes is generated, and the level of the charges is determined by a charge level determination circuit. Based on this determined charge level, a capacitance setting circuit sets a capacitance of an integrating capacitor unit in an integrating circuit. Thereafter, in the integrating circuit, the charges generated by the photodiodes are integrated in the integrating capacitor unit, and a voltage having a value consonant with the amount of the integrated charges is output. When background light is strong and the overall intensity of incident light is high, a comparatively large capacitance is set for the variable capacitor unit of the integrating circuit, and the intensity of the incident light is detected without saturation.

Abstract: In a signal read circuit including a plurality of circuit rows each having a charge amplifier connected to a photoelectric conversion element PD and a CDS circuit 2S for performing correlated double sampling for an output from the charge amplifier, a dummy circuit row DMY having the same configuration as a circuit row SLT is connected in parallel with this circuit row SLT. By calculating the difference between these circuit rows connected in parallel, offset variations generated in the two circuit rows SLT and DMY can be removed.

Abstract: A cell library database includes function information of standard cells which are basic circuits forming a logical device, each of the standard cell comprising at least one of power supply terminal as logical terminals, the function information of the standard cell containing logical information or delay information of the power supply terminal relative to an output terminal, or function information of macro cells which are functional circuits forming a logical device, each of the macro cell comprising at least one of power supply terminals as logical terminals, the function information of the macro cell containing logical information or delay information of said power supply terminals relative to an output terminal. A design aiding system uses the cell library database to execute logical simulation, etc.

Abstract: A solid-state image sensing device 10 mainly includes a light-receiving portion 14 formed on a substrate 12, a vertical shift register 16 formed to face one side of the light-receiving portion 14, and a horizontal shift register 18 and charge amplifiers 20 formed to face the opposite side of the light-receiving portion 14. The light-receiving portion 14 is formed from M×N photodiodes 22, and each photodiode 22 has a gate switch 24. The control terminals of the gate switches 24 are connected to the vertical shift register 16 via gate lines 26 in units of rows. The gate lines 26 have compensation lines 26c so as to make almost equal the capacitances of the gate lines 26 connected in units of rows. Accordingly, a plurality of solid-state image sensing devices 10 can be easily arrayed without any dead zone and can increase the light-receiving area.

Abstract: A method for measuring antioxidant activity of test samples, which attains higher sensitivity than the conventional methods is disclosed. In the method of this invention, methemoglobin, an oxidizing agent which oxidizes methemoglobin, a coloring agent which generates color by reaction with methemoglobin in the presence of the oxidizing agent, and a test sample whose antioxidant activity is to be measured are reacted, and the generated color is measured.

Abstract: A power circuit including means for preventing the generation of an inrush current during the power circuit's initial operation without increasing the size of the power circuit is described. The power circuit comprises an output transistor for supplying a current from a power supply to an output terminal, and a differential amplifier for controlling the current supplied by the output transistor in such a manner as to regulate a voltage at the output terminal based on a preset reference voltage. A limiting transistor is provided as a source follower on a current path at the output stage of the differential amplifier. The gate potential of the output transistor is controlled using the source potential of the limiting transistor. Before the power circuit starts to operate, an operation controller charges a capacitor to control the gate potential of the limiting transistor so that during the initial operation of the power circuit, the capacitor is discharged by using a current source.

Abstract: In the solid-state imaging apparatus of the present invention, when a signal is output from the capacity element to the data signal output circuit, the voltage of the output terminal of the capacity element is kept at that attained when the switch was previously opened, namely, the initial voltage of the input terminal of the data signal output circuit, whereby the voltage of the input terminal of the data signal output circuit is stable without fluctuation. Therefore, no noise is generated in the output signal at the instant when the capacity element and data signal output circuit are short-circuited, whereby optical images can be captured with a high accuracy in a high speed.