Abstract: According to one embodiment, an apparatus of manufacturing a radiation detection panel, includes an evaporation source configured to evaporate a scintillator material and emit the scintillator material vertically upward, a holding mechanism located vertically above the evaporation source, and holding a photoelectric conversion substrate, and a heat conductor arranged opposite to the holding mechanism with a gap.

Abstract: According to one embodiment, an apparatus of manufacturing a radiation detection panel, includes an evaporation source configured to evaporate a scintillator material and emit the scintillator material vertically upward, a holding mechanism located vertically above the evaporation source, and holding a photoelectric conversion substrate, and a heat conductor arranged opposite to the holding mechanism with a gap.

Abstract: According to one embodiment, an apparatus of manufacturing a radiation detection panel, includes an evaporation source configured to evaporate a scintillator material and emit the scintillator material vertically upward, a holding mechanism located vertically above the evaporation source, and holding a photoelectric conversion substrate, and a heat conductor arranged opposite to the holding mechanism with a gap.

Abstract: According to an embodiment, a radiation detector comprises a photoelectric conversion substrate and a scintillator layer. The photoelectric conversion substrate converts light into an electrical signal. The scintillator layer contacts the photoelectric conversion substrate and converts radiation incident from the outside into light. The scintillator layer is a fluorescer of CsI containing Tl as an activator. The CsI is a halide. The concentration of the activator inside the fluorescer is 1.6 mass %±0.4 mass %. The concentration of the activator inside the fluorescer in an in-plane direction of the scintillator layer has the relationship of central portion>peripheral portion. The central portion is a central region of a formation region of the scintillator layer. The peripheral portion is an outer circumferential region of the formation region of the scintillator layer.

Abstract: According to an embodiment, a radiation detector comprises a photoelectric conversion substrate and a scintillator layer. The photoelectric conversion substrate converts light into an electrical signal. The scintillator layer contacts the photoelectric conversion substrate and converts radiation incident from the outside into light. The scintillator layer is a fluorescer of CsI containing Tl as an activator. The CsI is a halide. The concentration of the activator inside the fluorescer is 1.6 mass %±0.4 mass %. The concentration of the activator inside the fluorescer in an in-plane direction of the scintillator layer has the relationship of central portion>peripheral portion. The central portion is a central region of a formation region of the scintillator layer. The peripheral portion is an outer circumferential region of the formation region of the scintillator layer.

Abstract: According to the embodiment, a radiation detector includes a photoelectric conversion substrate converting light to an electrical signal and a scintillator layer being in contact with the photoelectric conversion substrate and converting externally incident radiation to light. The scintillator layer is made of a phosphor containing Tl as an activator in CsI, which is a halide. A concentration of the activator in the phosphor is 1.6 mass %±0.4 mass %, and a concentration distribution of the activator in an in-plane direction and a film thickness direction is within ±15%.

Abstract: According to one embodiment, an apparatus of manufacturing a radiation detection panel, includes an evaporation source configured to evaporate a scintillator material and emit the scintillator material vertically upward, a holding mechanism located vertically above the evaporation source, and holding a photoelectric conversion substrate, and a heat conductor arranged opposite to the holding mechanism with a gap.

Abstract: In one embodiment, the radiation image detector includes: a radiation sensor, which includes an image detection unit in which a plurality of pixels a reading circuit, which reads image signal information from a group of pixels that are connected to an arbitrary row select line to which a drive voltage is applied, and also reads noise signal information from pixels when the drive voltage is not applied to all the row select lines; and a noise correction circuit, which corrects the image signal information on the basis of the noise signal information.

Abstract: A first protective layer is formed on the surface of a photoelectric conversion substrate on which photoelectric transducers have been provided, and then, a scintillator layer is formed thereon, whereby degradation of the photoelectric transducers due to the contact with the scintillator layer is prevented. A second protective layer covering the surface of the scintillator is formed. A peripheral part of the first protective layer is allowed to be in close contact with a peripheral part of the second protective layer to seal the scintillator layer between the first protective layer and the second protective layer, whereby degradation of the scintillator layer due to the moisture in the atmospheric air is prevented.

Abstract: An inkjet head has: a channel unit having a plurality of nozzles and a plurality of pressure chambers respectively communicating with the nozzles; and an actuator unit on the channel unit and having a piezoelectric sheet, a plurality of individual electrodes respectively arranged to positionally correspond to the pressure chambers respectively and a common electrode sandwiching the piezoelectric sheet together with the plurality of individual electrodes. The actuator unit has a thickness of 20 ?m to 100 ?m and a surface roughness of the end face of the actuator unit including an intersection with channel unit and the actuator unit is 0.15 ?m to 0.5 ?m, and at least part of the end face is sealed by a resin film.

Abstract: A semiconductor photodiode includes: an insulative substrate; a first conductivity type semiconductor layer formed on the insulative substrate; an i-type semiconductor layer formed on the first conductivity type semiconductor layer; a second conductivity type semiconductor layer formed on the i-type semiconductor layer; and a metal electrode. The metal electrode is provided between the insulative substrate and the first conductivity type semiconductor layer so that a peripheral face of the metal electrode is located inside a peripheral face of the first conductivity type semiconductor layer.

Abstract: A first protective layer is formed on the surface of a photoelectric conversion substrate on which photoelectric transducers have been provided, and then, a scintillator layer is formed thereon, whereby degradation of the photoelectric transducers due to the contact with the scintillator layer is prevented. A second protective layer covering the surface of the scintillator is formed. A peripheral part of the first protective layer is allowed to be in close contact with a peripheral part of the second protective layer to seal the scintillator layer between the first protective layer and the second protective layer, whereby degradation of the scintillator layer due to the moisture in the atmospheric air is prevented.

Abstract: A radiation detector comprises pixel electrodes which collect charges, a photoelectric converting layer which is provided on the pixel electrodes and which converts incident radiation into the charges, and which contains at least one or more kinds of heavy metal halide (ABn:A=heavy metal, B=halogen, n=either one of 1, 2, and 3) and at least one or more kinds of halogen (B2) respectively, and an electrode layer which is provided on the photoelectric converting layer opposite to the pixel electrodes.

Abstract: A radiation detector comprises pixel electrodes which collect charges, a photoelectric converting layer which is provided on the pixel electrodes and which converts incident radiation into the charges, and which contains at least one or more kinds of heavy metal halide (ABn:A=heavy metal, B=halogen, n=either one of 1, 2, and 3) and at least one or more kinds of halogen (B2) respectively, and an electrode layer which is provided on the photoelectric converting layer opposite to the pixel electrodes.

Abstract: Abrasion powder from the clutch retainer 28a is prevented from getting mixed into the grease used for lubricating the roller clutch 10, and the grease is prevented from becoming exposed to high temperatures, and so degrading too quickly is prevented in the grease. Specifically, a retaining piece 33 is formed at one end of the clutch retainer 28a in the inner-diameter side portion thereof, and a retaining collar section 34 is formed around the inner peripheral surface of the other end of the clutch retainer 28a. The inner ring 21 for the clutch is held from both sides in the axial direction between the fitting portion 35 at the tip end of the retaining piece 33 and the retaining collar section 34.

Abstract: An X-ray detector comprising a scintillator layer (38) provided for each pixel and adapted for converting X radiation into light, a storage capacitor (15) for storing, as electric charge, the light converted in the scintillator layer (38), and a partition layer (39) partitioning the adjoining scintillator layers (38) provided to the respective pixels. The scintillator layer (38) contains a fluorescent material (I), the partition layer contains a second phosphor (P2) having optical characteristics different from those of the fluorescent material (IP1). The wavelength of the fluorescent light emitted from the second phosphor (P2) includes a component which is equal to or longer than the shortest wavelength of the fluorescent light emitted from the fluorescent material (IP1).

Abstract: An actuator 1 in which a displacement element 7 has a piezoelectric ceramic layer 4 and a pair of electrodes 5, 6 interposing therebetween the piezoelectric ceramic layer 4. The entire thickness of the actuator 1 is 100 ?m or less. The piezoelectric ceramic layer 4 and the substrate 2 have as their principal component a perovskite crystal containing at least Pb; Zr and Ti, and, the maximum difference in a composition ratio Pb/(Ti+Zr) between the surface of the piezoelectric ceramic layer 4 and the inside of the substrate 2 is 0.02 or less. This reduces characteristic variation.

Abstract: An inkjet head has: a channel unit having a plurality of nozzles and a plurality of pressure chambers respectively communicating with the nozzles; and an actuator unit stuck onto the channel unit and having a piezoelectric sheet, a plurality of individual electrodes respectively arranged to positionally correspond to the pressure chambers respectively and a common electrode sandwiching the piezoelectric sheet together with the plurality of individual electrodes. The actuator unit has a thickness of 20 ?m to 100 ?m and a surface roughness of the end face of the actuator unit including an intersection with hannel unit and the actuator unit is 0.15 ?m to 0.5 ?m, and at least part of the end face is sealed by a resin film.

Abstract: An X-ray detector comprising a scintillation layer separated by a partition for each pixel and a photodiode for converting fluorescent light, which is converted by the sciltillation layer, into a signal charge, wherein when an average particle diameter of phosphor particles forming the scintillation layer is Ds and an average particle diameter forming the partition is Dw, Ds>Dw is satisfied.

Abstract: Low thermal expansion ceramics contains a cordierite crystal phase, wherein a phase of a crystalline compound containing at least one element selected from the group consisting of an alkaline earth element other than Mg, a rare earth element, Ga and In, is precipitated in the grain boundaries of said crystal phase, said ceramics has a relative density of not smaller than 95%, a coefficient of thermal expansion of not larger than 1×10?6/° C. at 10 to 40° C., and a Young's modulus of not smaller than 130 GPa. That is, the ceramics has a small coefficient of thermal expansion, is deformed very little depending upon a change in the temperature, has a very high Young's modulus and is highly rigid and is resistance against external force such as vibration. Accordingly, the ceramics is very useful as a member for supporting a wafer or an optical system is a lithography apparatus that forms high resolution circuit patterns on a silicon wafer.