Abstract: A stacked body, including a reflective electrode layer, an intermediate layer having a MgZnO composition, and a semiconductor layer having an AlGaN composition in this order, where a thickness of the intermediate layer is 1-80 nm. An emitting device containing the stacked body. A method of producing the stacked body.

Abstract: An equipment recovery notification method includes: when two or more units of equipment among units of equipment that execute a first process are stopped, estimating, from among one or more units of subsequent-process equipment that execute a second process subsequent to the first process, a productivity of one or more units of the subsequent-process equipment that use at least one of components produced by the two or more units of equipment; identifying one unit of equipment among the two or more units of equipment as target equipment for recovery work, based on the productivity of the one or more units of subsequent-process equipment; and notifying of the identified target equipment.

Abstract: The information processing method includes: obtaining items of priority data each representing a priority for a combination of a unit of equipment among units of equipment and a stoppage factor, the priority being for recovery work for equipment that has stopped among the units of equipment; estimating, for each item of the priority data, an equipment operating rate of overseen equipment among the units of equipment, the overseen equipment being equipment that a worker who performs the recovery work is in charge of; selecting, from among the items of priority data, priority data for which the equipment operating rate is greater than or equal to a threshold value; and outputting the selected priority data.

Abstract: An information management method collects log information of one or more home electrical apparatuses corresponding to service providers. Display screen data is generated which indicates a status of the log information. The display screen data includes groups of information which each contain information on an apparatus, a service provider corresponding to the apparatus, and log information output from the apparatus. Provision of the log information of each group is individually selectable. The display screen data is provided via a network to a display terminal that performs access to a server device. Information is received from the display terminal, which indicates that selection on whether or not provision of the log information is performed. Provision of the log information is not performed on the selected group when a determination is made that refusal of provision of the log information on the selected group is performed.

Abstract: An information management method collects log information of one or more home electrical apparatuses corresponding to service providers. Display screen data is generated which indicates a status of the log information. The display screen data includes groups of information which each contain information on an apparatus, a service provider corresponding to the apparatus, and log information output from the apparatus. Provision of the log information of each group is individually selectable. The display screen data is provided via a network to a display terminal that performs access to a server device. Information is received from the display terminal, which indicates that selection on whether or not provision of the log information is performed. Provision of the log information is not performed on the selected group when a determination is made that refusal of provision of the log information on the selected group is performed.

Abstract: There is provided a laser processing method for cutting a semiconductor object along a virtual plane facing a surface of the semiconductor object in the semiconductor object. The laser processing method includes a first step of forming a plurality of first modified spots along the virtual plane by causing laser light to enter into the semiconductor object from the surface, and a second step of forming a plurality of second modified spots along the virtual plane so as not to overlap the plurality of first modified spots, by causing laser light to enter into the semiconductor object from the surface.

Abstract: A method of producing an ultraviolet laser diode with a low oscillation threshold current density includes stacking a first cladding layer, a light-emitting layer, and a second cladding layer on a substrate in this order to form a nitride semiconductor laminate (step S101), etching at least a portion of the nitride semiconductor laminate to form a mesa structure and setting the ratio between the length of the resonator end faces and the length of the side surfaces of the mesa structure in plan view between 1:5 and 1:500 (step S102), disposing first conductive material on a portion of a first area and applying heat treatment of 400° C. or higher to form a first electrode (step S103), and disposing a second conductive material in an area on the second cladding layer, at a distance of 5 ?m or more from the side surfaces, to form a second electrode (step S104).

Abstract: A method of producing an ultraviolet laser diode with a low oscillation threshold current density includes stacking a first cladding layer, a light-emitting layer, and a second cladding layer on a substrate in this order to form a nitride semiconductor laminate (step S101), etching at least a portion of the nitride semiconductor laminate to form a mesa structure and setting the ratio between the length of the resonator end faces and the length of the side surfaces of the mesa structure in plan view between 1:5 and 1:500 (step S102), disposing first conductive material on a portion of a first area and applying heat treatment of 400° C. or higher to form a first electrode (step S103), and disposing a second conductive material in an area on the second cladding layer, at a distance of 5 ?m or more from the side surfaces, to form a second electrode (step S104).

Abstract: A technology is provided to form p-type regions and to effectively reduce a contact resistance between the p-type region and an electrode. One embodiment of a nitride semiconductor device manufacturing method may include a magnesium layer formation step of forming a magnesium layer that comprises magnesium as a major component on a surface of a nitride semiconductor substrate. The method may include an annealing step of annealing the nitride semiconductor substrate on which the magnesium layer is formed.

Abstract: An unauthorized communication detection device that detects unauthorized communication in a manufacturing system that manufactures products includes: an obtainer that obtains operation information of the manufacturing system; a storage that stores element information indicating one or more target elements among a plurality of elements related to manufacturing of the products; a specifier that specifies, for each of a plurality of communications performed in the manufacturing system, an element corresponding to the communication, based on the operation information; a calculator that calculates an abnormal degree of each of one or more communications, which satisfy that the element specified by the specifier is included in the one or more target elements indicated by the element information, among the plurality of communications; and a determiner that determines that, when an abnormal degree calculated by the calculator is larger than a threshold value, a communication corresponding to the abnormal degree is th

Abstract: An information management method collects log information of one or more home electrical apparatuses corresponding to service providers. Display screen data is generated which indicates a status of the log information. The display screen data includes groups of information which each contain information on an apparatus, a service provider corresponding to the apparatus, and log information output from the apparatus. Provision of the log information of each group is individually selectable. The display screen data is provided via a network to a display terminal that performs access to a server device. Information is received from the display terminal, which indicates that selection on whether or not provision of the log information is performed. Provision of the log information is not performed on the selected group when a determination is made that refusal of provision of the log information on the selected group is performed.

Abstract: A vapor phase epitaxial growth device comprises a reactor vessel and a wafer holder arranged within the reactor vessel. The wafer holder includes a wafer holding surface configured to hold a wafer with a wafer surface oriented substantially vertically downward. The device comprises a first material gas supply pipe configured to supply a first material gas and arranged below the wafer holding surface. The device comprises a second material gas supply pipe configured to supply a second material gas and arranged below the wafer holding surface. The device comprises a gas exhaust pipe configured to exhaust gases and arranged below the wafer holding surface. A distance between the gas exhaust pipe and an axis line passing through a center of the wafer holding surface is greater than distances between the axis line and each of the first material gas supply pipe and the second material gas supply pipe.

Abstract: An information management method collects log information of one or more home electrical apparatuses corresponding to service providers. Display screen data is generated which indicates a status of the log information. The display screen data includes groups of information which each contain information on an apparatus, a service provider corresponding to the apparatus, and log information output from the apparatus. Provision of the log information of each group is individually selectable. The display screen data is provided via a network to a display terminal that performs access to a server device. Information is received from the display terminal, which indicates that selection on whether or not provision of the log information is performed. Provision of the log information is not performed on the selected group when a determination is made that refusal of provision of the log information on the selected group is performed.

Abstract: A method for manufacturing a group III nitride semiconductor substrate, that includes: growing a first AlN buffer layer on an Si substrate at a first growth temperature; growing a second AlN buffer layer on the first AlN buffer layer at a second growth temperature higher than the first growth temperature; and growing a group III nitride semiconductor layer on the second AlN buffer layer, wherein an Al raw material and an N raw material are alternately repeatedly fed in the growing the first AlN buffer layer.

Abstract: An object of the present invention is to provide a method for manufacturing an optical device having a laser diode, which method is suitable for mass production, and an optical device having a laser diode which allows accurate property evaluations thereof with small measurement errors. Specifically, the method includes: an etching process of etching a semiconductor lamination unit to form a mesa structure having a resonator end face, thereby forming a laser diode; and a reflecting layer forming process of forming a light reflecting layer such that the light reflecting layer covers entire side surfaces of the mesa structure, wherein the semiconductor lamination unit has a substate, a n-type clad layer including a nitride semiconductor layer having n-type conductivity, a light-emitting layer including at least one quantum well, and a p-type clad layer including a nitride semiconductor layer having p-type conductivity, laminated in this order.

Abstract: A gallium nitride vapor phase epitaxy apparatus capable of doping magnesium is provided. The apparatus is used in vapor phase epitaxy not using organic metal as a gallium raw material. The apparatus comprises a reactor vessel and a wafer holder. The apparatus comprises a first raw material gas supply pipe configured to supply a first raw material gas containing gallium. The apparatus comprises a second raw material gas supply pipe configured to supply a second raw material gas, which contains nitrogen and configured to react with the first raw material gas. The apparatus comprises a third raw material gas supply pipe configured to supply a third raw material gas containing magnesium. The third raw material gas supply pipe is configured capable of placing a magnesium-based oxide on its supply path. The apparatus comprises a first heating unit configured to heat the magnesium-based oxide in a first temperature range.

Abstract: Provided is a product manufacturing system including: a manufacture control apparatus configured to hold manufacturing data on a product; a virtual manufacturing apparatus configured to virtually manufacture the product by simulation, based on the manufacturing data on the product in the manufacture control apparatus; a physical manufacturing apparatus configured to physically manufacture the product based on the manufacturing data in the manufacture control apparatus; an abnormality determination unit configured to determine whether there is an abnormality in the virtual manufacture of the product by the virtual manufacturing apparatus. When it is determined there is no abnormality from the virtual manufacture of the product, the physical manufacturing apparatus physically manufactures the product.

Abstract: An abnormality analysis device including: an overall information obtainer that obtains overall information indicating an overall feature amount of a manufacturing system; an overall abnormal degree calculator that calculates an overall abnormal degree that is an abnormal degree of a whole of the manufacturing system by statistically processing the overall information; an individual information obtainer that obtains individual information indicating a feature amount of each of the plurality of constituent elements; an individual abnormal degree calculator that calculates an individual abnormal degree that is an abnormal degree of each of the plurality of constituent elements by statistically processing the individual information; and a determiner that determines whether or not the overall abnormal degree exceeds a threshold value, wherein the individual abnormal degree calculator calculates the individual abnormal degree when the determiner determines that the overall abnormal degree exceeds the threshold valu

Abstract: An information management method collects log information of one or more home electrical apparatuses corresponding to service providers. Display screen data is generated which indicates a status of the log information. The display screen data includes groups of information which each contain information on an apparatus, a service provider corresponding to the apparatus, and log information output from the apparatus. Provision of the log information of each group is individually selectable. The display screen data is provided via a network to a display terminal that performs access to a server device. Information is received from the display terminal, which indicates that selection on whether or not provision of the log information is performed. Provision of the log information is not performed on the selected group when a determination is made that refusal of provision of the log information on the selected group is performed.

Abstract: A vapor phase epitaxial growth device comprises a reactor vessel and a wafer holder arranged within the reactor vessel. The wafer holder includes a wafer holding surface configured to hold a wafer with a wafer surface oriented substantially vertically downward. The device comprises a first material gas supply pipe configured to supply a first material gas and arranged below the wafer holding surface. The device comprises a second material gas supply pipe configured to supply a second material gas and arranged below the wafer holding surface. The device comprises a gas exhaust pipe configured to exhaust gases and arranged below the wafer holding surface. A distance between the gas exhaust pipe and an axis line passing through a center of the wafer holding surface is greater than distances between the axis line and each of the first material gas supply pipe and the second material gas supply pipe.