Abstract: A gain adjustment unit constituted by a distribution switch having a control terminal is provided in an input unit of an amplifier circuit. One end of a coupler is connected to an output line of the amplifier circuit, another end of the coupler is connected to an anode of a diode, and a monitor terminal is connected via a low-pass filter to a cathode of the diode. The anode of the diode is unbiased.

Abstract: A medication management system, method, and related medicine packaging device and packaged medicine are provided. The exemplary system includes a medication device including a memory unit that stores ID information and an ID transmission unit that transmits the ID information stored in the memory unit. A processing device that has correspondence information in which the ID information is associated with prescription information of a plurality of medicines to be taken together with one medication device and personal information about a patient who takes the plurality of medicines. A detector detects the ID information transmitted from the ID transmission unit and transmits the ID information that has been detected to the processing device, which manages medication based on the ID information that has been received and the correspondence information.

Abstract: An embodiment differential amplifier circuit includes an amplifier section including differential pair transistors to which a differential signal is input and a tail current circuit made up of a short stub provided between a ground terminal of the amplifier section and a ground. In an embodiment, an electrical length of the short stub is shorter than a quarter wavelength of an operation frequency of the differential amplifier circuit.

Abstract: A synchronous reluctance motor includes a shaft, a rotor, a stator, and multiple magnetic wedges. The stator radially opposes the rotor with a space therebetween. The stator includes a stator core having multiple slots arranged in the circumferential direction and open toward the rotor, and multiple stator coils disposed in the multiple slots. Multiple magnetic wedges close at least some of the multiple slots with the multiple stator coils disposed therein.

Abstract: A semiconductor light-receiving element, includes: a semiconductor substrate; a high-concentration layer of a first conductivity type formed on the semiconductor substrate; a low-concentration layer of the first conductivity type formed on the high-concentration layer of the first conductivity type and in contact with the high-concentration layer of the first conductivity type; a low-concentration layer of a second conductivity type configured to form a PN junction interface together with the low-concentration layer of the first conductivity type; and a high-concentration layer of the second conductivity type formed on the low-concentration layer of the second conductivity type and in contact with the low-concentration layer of the second conductivity type. The low-concentration layers have a carrier concentration of less than 1×1016/cm3. The high-concentration layers have a carrier concentration of 1×1017/cm3 or more.

Abstract: In an embodiment, an edge extraction method includes: emitting, toward an object, an electromagnetic wave polarized only in one direction perpendicular to a propagation direction; receiving a transmitted electromagnetic wave that has been transmitted through the object, using a receiving antenna; calculating an intensity in the propagation direction of the transmitted electromagnetic wave based on an intensity of the transmitted electromagnetic wave received by the receiving antenna; and obtaining a spatial distribution of the intensity in the propagation direction of the transmitted electromagnetic wave.

Abstract: A vehicle monitor apparatus including a vehicle monitor apparatus, including a main bracket supported by a pair of front and rear frames extending in a left-right direction on a ceiling portion of a vehicle, a monitor attached to the main bracket, and a sub-bracket interposed between the main bracket and a target frame, the target frame being at least one of the pair of front and rear frames. The sub-bracket includes a first fixing portion fixed to the target frame and a second fixing portion fixed to the main bracket, and at least one of the first fixing portion and the second fixing portion includes a height adjustment mechanism configured so that a height of the main bracket relative to the target frame is adjustable.

Abstract: A semiconductor photodetector includes: a substrate; a light-receiving mesa structure, on a first surface of the substrate, including semiconductor layers that includes an absorption layer; an insulating film overlapping with the light-receiving mesa structure in a transverse direction, the insulating film surrounding a side surface of the light-receiving mesa structure; a first electrode, on the first surface, including a mesa electrode electrically connected to and in contact with a top surface of a top layer of the semiconductor layers, the first electrode including a protruding electrode on the insulating film, the protruding electrode being electrically continuous to the mesa electrode, extending outward, and overlapping with the light-receiving mesa structure in the transverse direction, the protruding electrode being smaller in width than the mesa electrode; and a second electrode, on the first surface, electrically connected to a bottom surface of a bottom layer of the semiconductor layers.

Abstract: A patch conductor has a hexagonal shape as a whole in a plan view in which both corners of one side of a rectangle are obliquely cut off, and a connection portion located at a center of the side is connected to a feed line. In this way, an inclined portion inclined with respect to a direction X is formed between the side and a side of the patch conductor, and an inclined portion inclined with respect to the direction X is formed between the side and a side. This makes it possible to significantly improve directivity and gain and obtain a wideband radiation characteristic.

Abstract: A radio frequency antenna measurement system (10) of the present invention includes a receiving antenna (14) that receives a radiated radio wave from an on-chip radio frequency antenna (AUT). The receiving antenna (14) includes a waveguide (14A) in which a connector (14B) for outputting a reception signal to the power sensor (15) is integrally formed at a rear end. Accordingly, in a state where a microscope (MS) necessary for position adjustment of a feed probe (12) is installed, it is possible to construct a reception system that receives the radiated radio wave from the AUT and measures a radiation characteristic on a stage (11), and to measure the radiation characteristic such as a gain and radiation pattern of the AUT with high accuracy.

Abstract: A plurality of waveguide structures are loaded on a top surface opposed to a bottom surface of a metal case, on which a high-frequency circuit is mounted, a height, a width, and a length of each of the plurality of waveguide structures have dimensions corresponding to a quarter-wave of a cutoff frequency indicating a frequency band of a target electromagnetic wave to be blocked, and a width and a length of each of the plurality of waveguide structures have dimensions that allow only a high-frequency wave of a mode to propagate in the frequency band.

Abstract: A thin-film resistive element includes: a first electrode that is formed with a conductor formed in an annular shape in a planar view; a second electrode that is formed with a conductor disposed at a distance from the first electrode in a region surrounded by the first electrode; and a thin-film resistor that is electrically connected to the first electrode and the second electrode.

Abstract: A multilayer piezoelectric element includes a ceramic body formed by a piezoelectric ceramic, and having first and second end face facing a longitudinal direction, first and second principal faces facing a thickness direction perpendicular to the longitudinal direction. A pair of external electrodes cover the first and second end faces, extend from the first and second end faces onto the first principal face via ridge parts connecting the end faces with the principal faces, and project in the thickness direction on the first principal face. Multiple internal electrodes are stacked inside the ceramic body and are connected alternately to the pair of external electrodes along the thickness direction. A surface electrode is provided on at least one of the first and second principal faces, and connected to the external electrode different from the one to which the internal electrode adjacent in the thickness direction is connected.

Abstract: A semiconductor light-receiving element includes a substrate; a light-receiving mesa portion, formed on top of the substrate, including a first semiconductor layer of a first conductivity type, an absorption layer, and a second semiconductor layer of a second conductivity type; a light-receiving portion electrode, formed above the light-receiving mesa portion, connected to the first semiconductor layer; a pad electrode formed on top of the substrate; and a bridge electrode, placed so that an insulating gap is interposed between the bridge electrode and the second semiconductor layer, configured to connect the light-receiving portion electrode and the pad electrode on top of the substrate, the bridge electrode being formed in a layer separate from layers of the light-receiving portion electrode and the pad electrode.

Abstract: An amplifier circuit includes source-grounded amplifiers and a neutralization circuit that is connected between drain terminals and gate terminals of the source-grounded amplifiers and neutralizes a feedback capacitance of the source-grounded amplifiers, and the neutralization circuit includes transmission lines and a capacitor connected in series.

Abstract: The present invention relates to a method of controlling a fresh-water production apparatus for treating a raw water in stages by N-stage (N is a natural number of 2 or larger) water treatment methods, the method including: a filtration-characteristic prediction step; a filtration-characteristic deviation assessment step; a filtration-characteristic deviation assessment step; a cyclic prediction calculation step; a control condition recording step; a cyclic prediction calculation step; and a control condition recording step, in which the fresh-water production apparatus is controlled on the basis of the control condition recording step for the (n?1)-th stage water treatment method and the control condition recording step for the n-th stage water treatment method.

Abstract: Stub conductors are disposed so as to surround an outer periphery of a patch conductor and be spaced from the patch conductor with a gap positioned between the stub conductors and the patch conductor.

Abstract: The present invention provides a fresh water generator operating method and a determination program that are employed in a method for cleaning a separation membrane module following membrane filtration, and that, while various cleaning steps such as reverse pressure cleaning, air cleaning, chemical solution cleaning are taking place after completion of the membrane filtration, determines cleaning troubles by calculating a temporal change in resistance increase rate on the basis of an increase in membrane differential pressure.

Abstract: A vibration generating device includes: a vibrator; and a piezoelectric actuator. The vibrator has a first main surface and a second main surface on a side opposite to the first main surface. The piezoelectric actuator is joined to the second main surface. A plurality of recessions and projections is formed at equal intervals on the first main surface. The vibration generating device is configured to be capable of presenting a haptic sensation while preventing a contact sound from being generated.

Abstract: A semiconductor light-receiving element, includes: a semiconductor substrate; a high-concentration layer of a first conductivity type formed on the semiconductor substrate; a low-concentration layer of the first conductivity type formed on the high-concentration layer of the first conductivity type and in contact with the high-concentration layer of the first conductivity type; a low-concentration layer of a second conductivity type configured to form a PN junction interface together with the low-concentration layer of the first conductivity type; and a high-concentration layer of the second conductivity type formed on the low-concentration layer of the second conductivity type and in contact with the low-concentration layer of the second conductivity type. The low-concentration layers have a carrier concentration of less than 1×1016/cm3. The high-concentration layers have a carrier concentration of 1×1017/cm3 or more.