Abstract: A negative capacitance circuit is connected between a drain and a source of the mixer transistor. With this configuration, the negative capacitance circuit is connected in parallel to a parasitic capacitance generated between the drain and the source of the mixer transistor, and the parasitic capacitance can be canceled out in a wide band by the negative capacitance circuit connected in parallel.

Abstract: A distributed mixer is configured of an artificial transmission line of which an input end is connected to an LO terminal and a terminal end is connected to an IF terminal, an artificial transmission line of which an input end is connected to an RF terminal, FETs that perform frequency synthesis of LO signals and RF signals and that are disposed following the artificial transmission lines and of which gates are connected to the artificial transmission line and sources are grounded, a bias circuit that applies gate bias voltage to a terminal end of the artificial transmission line, a terminating resistor that connects the terminal end of the artificial transmission line and a ground, and a plurality of transmission lines provided between the artificial transmission line and a drain of each FET.

Abstract: A plurality of waveguide structures are loaded on a top surface opposed to a bottom surface of a metal case, on which a high-frequency circuit is mounted, a height, a width, and a length of each of the plurality of waveguide structures have dimensions corresponding to a quarter-wave of a cutoff frequency indicating a frequency band of a target electromagnetic wave to be blocked, and a width and a length of each of the plurality of waveguide structures have dimensions that allow only a high-frequency wave of a mode to propagate in the frequency band.

Abstract: A semiconductor light-receiving element includes a substrate; a light-receiving mesa portion, formed on top of the substrate, including a first semiconductor layer of a first conductivity type, an absorption layer, and a second semiconductor layer of a second conductivity type; a light-receiving portion electrode, formed above the light-receiving mesa portion, connected to the first semiconductor layer; a pad electrode formed on top of the substrate; and a bridge electrode, placed so that an insulating gap is interposed between the bridge electrode and the second semiconductor layer, configured to connect the light-receiving portion electrode and the pad electrode on top of the substrate, the bridge electrode being formed in a layer separate from layers of the light-receiving portion electrode and the pad electrode.

Abstract: A panel includes a vibration plate having a generally rectangular shape; and a piezoelectric actuator that is provided on a main surface of the vibration plate and causes the vibration plate to vibrate, in which the vibration plate is configured such that a length x in mm of a long side of the vibration plate and logarithmic decrement y of the vibration plate satisfy Expression 1 below: y?32.6x?1 ??(Expression 1).

Abstract: A photoelectric conversion element includes a substrate including a lens-shaped convex portion and an annular concave portion surrounding the lens-shaped convex portion on a first main surface; a photoelectric conversion layer, positioned on an optical path of light passing through the lens-shaped convex portion, on a second main surface side of the substrate; and a pattern disposed on an outer peripheral side of the annular concave portion on the first main surface and disposed to interpose the lens-shaped convex portion from a first direction and a second direction intersecting the first direction.

Abstract: The present invention provides a method for preparing a water quality profile that has (1) a step 1 for supplying water to be treated to a separation membrane module with a supply port for the water being treated and multiple permeate outlets and obtaining permeate, (2) a step 2 for varying the ratio of the flow rates of the respective permeates flowing out of the multiple permeate outlets, (3) a step 3 after step 2 for measuring the respective water qualities of the permeates, and (4) a step 4 for plotting the relationship between the ratio of the respective permeate flow rates varied in step 2 and the respective water qualities of the permeates measured in step 3 as a scatter diagram, steps 2-4 being repeated multiple times.

Abstract: A source injection mixer includes an FET, an IF matching circuit between an IF port and a gate of the FET, and that matches impedance of the IF port and impedance of the gate as viewed from the IF port, a shorting stub of which one end is connected to a source of the FET and another end is grounded, and shorter than ¼ of an electric length at a frequency of LO signals, an LO matching circuit between an LO port and the source of the FET, and that matches impedance of the LO port and impedance of the source as viewed from the LO port, and an RF matching circuit between an RF port and a drain of the FET, and that matches impedance of the RF port and impedance of the drain as viewed from the RF port.

Abstract: A wide-band analog input signal is converted into a digital output signal on the basis of a band division method without the need for filter circuits. An analog processing block Aj (j=2 to N, where N is an integer) down-converts an analog input signal Sx using a cutoff frequency fj-1 of a channel CHj-1 and A/D-converts an analog signal Saj acquired as a result. A digital processing block Bj doubles the signal strength of a first digital signal S1j acquired by Aj, subtracts a third digital signal S3j-1 of the channel CHj-1 from a second digital signal S2j acquired as a result, up-converts the acquired third digital signal S3j using the cutoff frequency fj-1, and outputs the result to an adder as a channel output signal Syj of a corresponding channel CHj.

Abstract: A semiconductor light-receiving element includes a substrate; a light-receiving mesa portion, formed on top of the substrate, including a first semiconductor layer of a first conductivity type, an absorption layer, and a second semiconductor layer of a second conductivity type; a light-receiving portion electrode, formed above the light-receiving mesa portion, connected to the first semiconductor layer; a pad electrode formed on top of the substrate; and a bridge electrode, placed so that an insulating gap is interposed between the bridge electrode and the second semiconductor layer, configured to connect the light-receiving portion electrode and the pad electrode on top of the substrate, the bridge electrode being formed in a layer separate from layers of the light-receiving portion electrode and the pad electrode.

Abstract: A resistive mixer includes a LO matching circuit inserted between the gate of an FET and a LO terminal, a bias circuit that is connected to the gate and applies a bias voltage to the gate, an RF matching circuit inserted between the drain of the FET and an RF terminal, and an IF matching circuit inserted between the drain and an IF terminal. The source of the FET is grounded. The impedance of the RF matching circuit seen from the drain of the FET at an IF frequency is open-circuit, and the impedance of the IF matching circuit seen from the drain of the FET at an RF frequency is open-circuit.

Abstract: A digital signal process unit includes a first cancel signal generation unit and a second cancel signal generation unit. The first cancel signal generation unit generates, as a first cancel signal component, a cancel signal component corresponding to an image signal included in an analog signal output from a mixer. The second cancel signal generation unit generates, as a second cancel signal component, a cancel signal component corresponding to a leakage signal generated between an input and output of the mixer. The digital signal process unit includes subtractors for subtracting the first cancel signal component and the second cancel signal component from a signal component corresponding to a frequency band divided from an input signal to obtain a digital signal.

Abstract: A negative capacitance circuit is connected between a drain and a source of the mixer transistor. With this configuration, the negative capacitance circuit is connected in parallel to a parasitic capacitance generated between the drain and the source of the mixer transistor, and the parasitic capacitance can be canceled out in a wide band by the negative capacitance circuit connected in parallel.

Abstract: A source injection mixer includes an FET, an IF matching circuit between an IF port and a gate of the FET, and that matches impedance of the IF port and impedance of the gate as viewed from the IF port, a shorting stub of which one end is connected to a source of the FET and another end is grounded, and shorter than ¼ of an electric length at a frequency of LO signals, an LO matching circuit between an LO port and the source of the FET, and that matches impedance of the LO port and impedance of the source as viewed from the LO port, and an RF matching circuit between an RF port and a drain of the FET, and that matches impedance of the RF port and impedance of the drain as viewed from the RF port.

Abstract: Provided are a semiconductor photodiode which achieves a higher response rate in a state in which light receiving sensitivity is maintained. The semiconductor photodiode includes a p-type semiconductor contact layer, an n-type semiconductor contact layer, and a light absorption layer. The light absorption layer includes a first semiconductor absorption layer having a thickness Wd and a p-type second semiconductor absorption layer having a thickness Wp. The first semiconductor absorption layer and the second absorption layer are made of the same composition. The first semiconductor absorption layer is depleted, and the second semiconductor absorption layer maintains an electric charge neutral condition except for a region near an interface with the first semiconductor absorption layer. A relationship between the thickness Wd and the thickness Wp satisfies 0.47?Wp/(Wp+Wd)?0.9.

Abstract: Provided is a vibration panel including an inner member, a first outer member, a second outer member, a piezoelectric actuator, an actuator bonding layer, and a filler. The inner member includes first and second main surfaces. The first outer member includes third and fourth main surfaces, the third main surface including a first region and a second region. The second outer member includes fifth and sixth main surfaces, the fifth main surface including a third region and a fourth region. The piezoelectric actuator causes vibration. The actuator bonding layer is disposed between the piezoelectric actuator and the second region and bonds the piezoelectric actuator to the second region. The filler fills a space between the second region and the fourth region and covers the piezoelectric actuator.

Abstract: A panel includes a vibration plate having a generally rectangular shape; and a piezoelectric actuator that is provided on a main surface of the vibration plate and causes the vibration plate to vibrate, in which the vibration plate is configured such that a length x in mm of a long side of the vibration plate and logarithmic decrement y of the vibration plate satisfy Expression 1 below: y?32.6x?1 ??(Expression 1).

Abstract: A gain adjustment unit constituted by a distribution switch having a control terminal is provided in an input unit of an amplifier circuit. One end of a coupler is connected to an output line of the amplifier circuit, another end of the coupler is connected to an anode of a diode, and a monitor terminal is connected via a low-pass filter to a cathode of the diode. The anode of the diode is unbiased.

Abstract: An electroacoustic transducer includes a piezoelectric speaker and a housing. The piezoelectric speaker has: a first vibration plate with a periphery; a piezoelectric element placed on at least one face of the first vibration plate; and multiple openings that are provided around the piezoelectric element and penetrate through the first vibration plate in its thickness direction that is a first axis direction. The housing has: a supporting part that directly or indirectly supports the periphery; and a sound introduction port that faces the piezoelectric speaker in the first axis direction. The sound introduction port is provided at a position where it does not overlap, in the first axis direction, a first opening having the largest open area among the multiple openings. The electroacoustic transducer can improve the acoustic characteristics of a piezoelectric speaker.

Abstract: A high frequency connection structure includes: a waveguide; a ridge coupler constituted by a conductor formed inside one end of the waveguide; a transmission line adjacent to the one end of the waveguide; an inductance adjustment structure which is provided between the ridge coupler and the transmission line and which adjusts ground inductance that is created due to a connection between the ridge coupler and the waveguide; and a wire which connects one end of the ridge coupler on a side of the transmission line and one end of the transmission line with each other.