Abstract: A film forming apparatus including an atomizing means for atomizing a raw material solution to form a raw material mist, a carrier gas supply means to transport the raw material mist, a mist supply means to supply a gas mixture, in which the raw material mist and the carrier gas are mixed, to a surface of a substrate, a stage on which the substrate is placed, a measurement means for directly or indirectly measuring a supply amount of the raw material mist to output a signal in accordance with a measured value obtained by the measurement, and a control means for receiving the signal to adjust the supply amount of the raw material mist based on the signal.

Abstract: A crystalline oxide film containing gallium as a main component, in which when CuK? rays are made incident on the crystalline oxide film to perform X-ray diffraction, a reflection output in scanning ? and 2? has a local maximum point when 16.20°<2?<39.90° and 20.30°<?<32.20° at an angle ? around a ? axis orthogonal to a surface of the crystalline oxide film at the angle ? where a peak attributable to the crystalline oxide film by ?-2? measurement is maximum, and 40.10°<?+?<40.40° relative to ? and ? at which the reflection output reaches a maximum is satisfied. This provides the crystalline oxide film, a laminated structure, a semiconductor device with excellent semiconductor properties, particularly excellent withstand voltage, and a method for producing a crystalline oxide film.

Abstract: A film forming method for forming a film by heating a mist in a film-forming unit, the method including steps of: atomizing a raw-material solution in an atomizer to generate a mist; conveying the mist with a carrier gas from the atomizer to the film-forming unit through a conveyor that connects the atomizer and the film-forming unit; and heating the mist to form a film on a substrate in the film-forming unit. In this method, a flow rate of the carrier gas and a temperature of the carrier gas are controlled to satisfy 7<T+Q<67, where Q represents the flow rate (L/minute) of the carrier gas, and T represents the temperature (° C.) of the carrier gas. Thus, provided is a film forming method excellent in film forming speed.

Abstract: A solar cell is provided with: a semiconductor substrate having a light-receiving surface and a non-light-receiving surface; a PN junction section formed on the semiconductor substrate; a passivation layer formed on the light-receiving surface and/or the non-light-receiving surface; and power extraction electrodes formed on the light-receiving surface and the non-light-receiving surface. The solar cell is characterized in that the passivation layer includes an aluminum oxide film having a thickness of 40 nm or less. As a result of forming a aluminum oxide film having a predetermined thickness on the surface of the substrate, it is possible to achieve excellent passivation performance and excellent electrical contact between silicon and the electrode by merely firing the conductive paste, which is conventional technology. Furthermore, an annealing step, which has been necessary to achieve the passivation effects of the aluminum oxide film in the past, can be eliminated, thus dramatically reducing costs.

Abstract: A method for producing a gallium precursor, including, a step of preparing a solvent comprising an aqueous solution containing an acid and/or an alkali, a step of immersing gallium in the solvent, a step of making the gallium immersed in the solvent fine, and a step of dissolving the fined gallium. This provides a method for producing a gallium precursor with high quality and highly productive.

Abstract: A film forming method for forming a film by heating a mist in a film-forming unit, the method including steps of: atomizing a raw-material solution in an atomizer to generate a mist; conveying the mist with a carrier gas from the atomizer to the film-forming unit through a conveyor that connects the atomizer and the film-forming unit; and heating the mist to form a film on a substrate in the film-forming unit. In this method, a flow rate of the carrier gas and a temperature of the carrier gas are controlled to satisfy 7<T+Q<67, where Q represents the flow rate (L/minute) of the carrier gas, and T represents the temperature (° C.) of the carrier gas. Thus, provided is a film forming method excellent in film forming speed.

Abstract: A method for manufacturing an underlying substrate for a single crystal diamond laminate substrate, the method including the steps of: preparing an initial substrate; forming an intermediate layer consisting of a single layer or a laminated film containing at least a single crystal Ir film or a single crystal MgO film on the initial substrate; wherein the single crystal Ir film or single crystal MgO film constituting the intermediate layer is formed using a mist CVD method. This makes it possible to provide a method for manufacturing an underlying substrate on which a high quality single crystal diamond layer which is applicable to electronic/magnetic devices, has a large area (large diameter), and having high crystallinity, few hillocks, abnormally grown particles, dislocation defects, with high purity and low stress can be formed.

Abstract: A film-forming method for forming a crystalline oxide film containing mainly gallium oxide on a substrate by a mist CVD method, including: heating a substrate; heating a nozzle supplying mist containing a raw material solution; and forming the crystalline oxide film by supplying the mist onto the heated substrate so that the heated nozzle discharging direction is perpendicular to the substrate surface, wherein, in nozzle heating, the nozzle is heated to where the substrate is not present in the nozzle discharging direction, and, in forming the crystalline oxide film, the film is formed to where the substrate is present in the nozzle discharging direction. Thus, a crystalline oxide film containing mainly gallium oxide, is excellent in crystallinity and ensures desirable in-plane film thickness distribution even with a large area and small film thickness, a film-forming method for forming a crystalline oxide film, and a film-forming apparatus for performing the method.

Abstract: The present invention is a laminate including: a crystal substrate; a middle layer formed on a main surface of the crystal substrate, the middle layer containing a mixture of an amorphous region in an amorphous phase and a crystal region in a crystal phase having a corundum structure mainly made of a first metal oxide; and a crystal layer formed on the middle layer and having a corundum structure mainly made of a second metal oxide. Thus, provided is a laminate having high-quality corundum-structured crystal with sufficiently suppressed crystal defects.

Abstract: A laminate including: a crystal substrate; and a semiconductor film provided on a main surface of the crystal substrate, the semiconductor film being mainly made of an oxide semiconductor containing a dopant and having a corundum structure, where the oxide semiconductor has a silicon concentration of 5.0×1020 cm?3 or less, and the semiconductor film has a resistivity of 150 m?·cm or less. This provides a laminate including a semiconductor having low resistance and a corundum structure suitable for use in semiconductor devices.

Abstract: A laminate including: a crystal substrate; and a semiconductor film provided on a main surface of the crystal substrate, the semiconductor film being mainly made of an oxide semiconductor containing a dopant and having a corundum structure, where the oxide semiconductor has a silicon concentration of 5.0×1020 cm?3 or less, and the semiconductor film has a resistivity of 150 m?·cm or less. This provides a laminate including a semiconductor having low resistance and a corundum structure suitable for use in semiconductor devices.

Abstract: A laminated structure including, a ground substrate with a crystalline oxide film containing gallium oxide as a main component and a root-mean-square of a roughness on a surface of the crystalline oxide film is 0.2 ?m or less. A diameter of the ground substrate is 50 mm or more and TTV of the ground substrate is 30 ?m or less.

Abstract: A laminated structure having at least a base substrate and a crystalline oxide film containing gallium oxide as a main component, wherein an average value of reflectance of light having a wavelength of 400 to 800 nm is 16% or greater on a surface on a side of the crystalline oxide film of the laminated structure. Thus, the invention provides a laminated structure having a crystalline oxide film containing gallium oxide as a main component with extremely few crystal defects, excellent crystallinity, and excellent semiconductor properties when applied to a semiconductor device.

Abstract: A method for manufacturing a solar cell, including the steps of: forming unevenness on both of main surfaces of a semiconductor substrate of a first conductivity type; forming a base layer on a first main surface of the semiconductor substrate; forming a diffusion mask on the base layer; removing the diffusion mask in a pattern; forming an emitter layer on the portion of the first main surface where the diffusion mask have been removed; removing the remaining diffusion mask; forming a dielectric film on the first main surface; forming a base electrode on the base layer; and forming an emitter electrode on the emitter layer. This provides a method for manufacturing a solar cell that can bring high photoelectric conversion efficiency while decreasing the number of steps.

Abstract: A film forming method for forming a film by heating a mist in a film-forming unit, the method including steps of: atomizing a raw-material solution in an atomizer to generate a mist; conveying the mist with a carrier gas from the atomizer to the film-forming unit through a conveyor that connects the atomizer and the film-forming unit; and heating the mist to form a film on a substrate in the film-forming unit. In this method, a flow rate of the carrier gas and a temperature of the carrier gas are controlled to satisfy 7<T+Q<67, where Q represents the flow rate (L/minute) of the carrier gas, and T represents the temperature (° C.) of the carrier gas. Thus, provided is a film forming method excellent in film forming speed.

Abstract: A film formation device which forms a film on a substrate through the heat treatment of a starting material solution in the form of a mist, the film formation device including a mist conversion unit that generates a mist by converting the starting material solution into mist, a carrier gas supply unit that supplies a carrier gas for transporting the mist generated by the mist conversion unit, a film formation unit that includes therein a placement part for placing the substrate and that is where the mist transported by the carrier gas is supplied onto the substrate, and an exhaust unit that exhausts exhaust gas from the film formation unit, and further including, above the placement part in the film formation unit, a nozzle for supplying the mist onto the substrate and a top plate for adjusting the flow of the mist supplied from the nozzle.

Abstract: A film forming apparatus including an atomizer configured to atomize a raw material solution to generate a raw material mist, a carrier gas supplier configured to supply a carrier gas that carries the raw material mist, a mist supplier configured to supply a mixture gas in which the raw material mist and the carrier gas are mixed to a surface of a substrate, a stage configured to hold the substrate, a heater configured to heat the substrate, and an exhaust unit directly or indirectly connected to the stage through piping. Thus, a film forming apparatus that can form a crystalline semiconductor film with favorable crystal orientation stably and with high productivity, and a method of forming a crystalline semiconductor film are provided.

Abstract: A method producing a laminate with a semiconductor film that has a corundum crystal structure, includes the steps of mounting a substrate on a stage; heating the substrate, atomizing a raw material solution for film deposition, forming a gaseous mixture by mixing the atomized raw material solution for film deposition and carrier gas; and forming the film deposition by supplying the gaseous mixture to the substrate, wherein a surface roughness Ra of a contact surface with the substrate on the stage and the contact surface with the stage on the substrate is 0.5 ?m or less. The method produces the laminate capable of stably forming a thick film of a corundum crystal thin film (the semiconductor film having a corundum crystal structure) with excellent crystal orientation and high quality.

Abstract: A laminate contains a crystal substrate; a middle layer formed on a main surface of the crystal substrate, the middle layer comprising a mixture of an amorphous region in an amorphous phase and a crystal region in a crystal phase having a corundum structure mainly made of a first metal oxide; and a crystal layer formed on the middle layer and having a corundum structure mainly made of a second metal oxide, wherein the crystal region is an epitaxially grown layer from a crystal plane of the crystal substrate.

Abstract: A backside contact solar cell has, on a first main surface of a crystal silicon substrate, a p-type region having a p-conductive type and an n-type region having an n-conductive type, and a positive electrode formed on the p-type region and a negative electrode formed on the n-type region, wherein the positive electrode includes a laminated conductor of a first electric conductor which is formed on the p-type region and which includes a group III element and a second electric conductor which is laminated on the first electric conductor and which has a lower content ratio of the group III element than the first electric conductor, and the negative electrode includes the second electric conductor formed on the n-type region. In this way, a low-cost backside contact solar cell has a high photoelectric conversion efficiency.