Abstract: A solar cell wherein: an emitter layer is formed on a light-receiving-surface side of a crystalline silicon substrate, with a dopant of the opposite conductivity type from the silicon substrate added to said emitter layer; a passivation film is formed on the surface of the silicon substrate; and an extraction electrode and a collector electrode are formed. Said extraction electrode extracts photogenerated charge from the silicon substrate, and said collector electrode contacts the extraction electrode at least partially and collects the charge collected at the extraction electrode. The extraction electrode contains a first electrode that consists of a sintered conductive paste containing a dopant that makes silicon conductive. Said first electrode, at least, is formed so as to pass through the abovementioned passivation layer. The collection electrode contains a second electrode that has a higher conductivity than the aforementioned first electrode.

Abstract: A solar cell has a passivation film formed on a crystalline silicon substrate that has at least a p-n junction, and an electrode formed by printing and heat-treating a conductive paste. The solar cell has a first electrode comprising an extraction electrode, which extracts photogenerated carriers from the silicon substrate, formed so as to contact the silicon substrate and a second collector electrode, which collects the carriers collected at the extraction electrode, formed so as to contact the first electrode. Other than the point of contact between the first electrode and the second electrode, at least, the second electrode contacts the silicon substrate only partially or not at all. By leaving the passivation film between the collector electrode and the silicon, either completely or partially, the solar cell reduces charge losses at electrode/silicon interfaces, improves the short-circuit current and open voltage, and yields improved characteristics.

Abstract: Disclosed in a method that is for producing a solar cell and that is characterized by performing an annealing step on a semiconductor substrate before an electrode-forming step. By means of performing annealing in the above manner, it is possible to improve the electrical characteristics of the solar cell without negatively impacting reliability or outward appearance. As a result, the method can be widely used in methods for producing solar cells having high reliability and electrical characteristics.

Abstract: A solar cell has a passivation film formed on a crystalline silicon substrate that has at least a p-n junction, and an electrode formed by printing and heat-treating a conductive paste. The solar cell has a first electrode comprising an extraction electrode, which extracts photogenerated carriers from the silicon substrate, formed so as to contact the silicon substrate and a second collector electrode, which collects the carriers collected at the extraction electrode, formed so as to contact the first electrode. Other than the point of contact between the first electrode and the second electrode, at least, the second electrode contacts the silicon substrate only partially or not at all. By leaving the passivation film between the collector electrode and the silicon, either completely or partially, the solar cell reduces charge losses at electrode/silicon interfaces, improves the short-circuit current and open voltage, and yields improved characteristics.

Abstract: A solar cell has: an emitter layer formed on a light-receiving-surface side of a crystalline silicon substrate, with a dopant of the opposite conductivity type from the silicon substrate added to the emitter layer, a passivation film formed on the surface of the silicon substrate, an extraction electrode and a collector electrode. The extraction electrode extracts photogenerated charge from the silicon substrate and the collector electrode collects the charge collected at the extraction electrode. The extraction electrode contains a first electrode that consists of a sintered conductive paste. The first electrode, at least, is formed so as to pass through the passivation layer. The collection electrode contains a second electrode that has a higher conductivity than the first electrode. This solar cell reduces contact-resistance losses between the silicon and the electrodes, resistance losses due to electrode resistance, and optical and electrical losses in the emitter layer.

Abstract: Disclosed in a method that is for producing a solar cell and that is characterized by performing an annealing step on a semiconductor substrate before an electrode-forming step. By means of performing annealing in the above manner, it is possible to improve the electrical characteristics of the solar cell without negatively impacting reliability or outward appearance. As a result, the method can be widely used in methods for producing solar cells having high reliability and electrical characteristics.

Abstract: Disclosed is a solar cell which is provided with: a semiconductor substrate having a light-receiving surface and a non-light-receiving surface; a PN junction section formed on the semiconductor substrate; a passivation layer formed on the light-receiving surface and/or the non-light-receiving surface; and power extraction electrodes formed on the light-receiving surface and the non-light-receiving surface. The solar cell is characterized in that the passivation layer includes an aluminum oxide film having a thickness off 40 nm or less. As a result of forming a aluminum oxide film having a predetermined thickness on the surface of the substrate, it is possible to achieve excellent passivation performance and excellent electrical contact between silicon and the electrode by merely firing the conductive paste, which is conventional technology.