Abstract: A display panel includes a substrate, a display element, a plurality of pixels arranged in a matrix, a drive circuit that drives the display element, a switching transistor in each of the plurality of pixels and selectively performs switching on the pixel that is to be caused to emit light, a first drive transistor in each of the plurality of pixels and drives a light-emitting element in the pixel, and a second drive transistor in the drive circuit. The switching transistor that is in each of the plurality of pixels, the first drive transistor that is in each of the plurality of pixels, and the second drive transistor in the drive circuit include oxide semiconductors. The switching transistor in each of the plurality of pixels and the second drive transistor in the drive circuit have a higher mobility than the first drive transistor in each of the plurality of pixels.

Abstract: A circulation apparatus recovers cooling fluid after the cooling fluid is used for quenching and supplies the cooling fluid to a defoaming bath. A laminar flow weir of a defoaming apparatus partitions the defoaming bath into laminar and shallow flow baths. The laminar flow weir is lower than a side wall of the laminar flow bath. Cooling fluid from the circulation apparatus is supplied to the laminar flow bath and the cooling fluid is poured into the shallow bath from the laminar flow bath along the laminar flow weir. A filter covers an opening in a bottom portion of the shallow bath. The liquid level height in the shallow bath is less than the height of the laminar flow weir. A supply bath accumulates cooling fluid that passes through the filter, and supplies the cooling fluid to a cooling apparatus that sprays the cooling fluid onto a metallic material.

Abstract: A display device correction method performed by a control unit that performs display control on an organic electroluminescent (EL) panel including a plurality of display pixels, in an organic EL display which includes the organic EL panel and the control unit. The display device correction method includes: obtaining a cumulative value of a pixel signal supplied to a drive transistor which is included in a current pixel to be processed among the plurality of display pixels and supplies drive current according to the pixel signal to an organic EL element (OEL); calculating a shift amount of a threshold voltage of the drive transistor, using the cumulative value; calculating an amount of change in mobility, using the shift amount; and calculating a correction parameter for correcting a pixel signal, using the amount of change in mobility.

Abstract: Provided is a highly reliable nickel-zinc battery including a separator exhibiting hydroxide ion conductivity and water impermeability. The nickel-zinc battery includes a positive electrode containing nickel hydroxide and/or nickel oxyhydroxide; a positive-electrode electrolytic solution in which the positive electrode is immersed, the electrolytic solution containing an alkali metal hydroxide; a negative electrode containing zinc and/or zinc oxide; a negative-electrode electrolytic solution in which the negative electrode is immersed, the electrolytic solution containing an alkali metal hydroxide; a hermetic container accommodating the positive electrode, the positive-electrode electrolytic solution, the negative electrode, and the negative-electrode electrolytic solution; and the separator exhibiting hydroxide ion conductivity and water impermeability and disposed in the hermetic container so as to separate a positive-electrode chamber from a negative-electrode chamber.

Abstract: Provided is a highly reliable nickel-zinc battery including a separator exhibiting hydroxide ion conductivity and water impermeability. The separator is disposed in a hermetic container to separate a positive-electrode chamber accommodating a positive electrode and a positive-electrode electrolyte from a negative-electrode chamber accommodating a negative electrode and a negative-electrode electrolyte. The positive-electrode chamber has an extra positive-electrode space having a volume that meets a variation in amount of water in association with reaction at the positive electrode during charge and discharge of the battery, and the negative-electrode chamber has an extra negative-electrode space having a volume meeting a variation in amount of water in association with reaction at the negative electrode during charge and discharge of the battery.

Abstract: Provided is a separator structure for use in a zinc secondary battery. The separator structure includes a ceramic separator composed of an inorganic solid electrolyte and having hydroxide ion conductivity and water impermeability, and a peripheral member disposed along the periphery of the ceramic separator and composed of at least one of a resin frame and a resin film. The separator structure exhibits water impermeability as a whole. The separator structure of the present invention can reliably separate the positive electrode side from the negative electrode side in a zinc secondary battery, is readily sealed and bonded to a resin battery container, and exhibits significantly improved handleability during the assembly of the battery.

Abstract: Provided is a highly reliable nickel-zinc battery, which includes a separator exhibiting hydroxide ion conductivity and water impermeability. The separator is disposed in a hermetic container to separate a positive-electrode chamber from a negative-electrode chamber. The positive-electrode chamber has an extra positive-electrode space having a volume that meets part of a variation in amount of water in association with the positive electrode reaction, and the negative-electrode chamber has an extra negative-electrode space having a volume that meets part of a variation in amount of water in association with the negative electrode reaction.

Abstract: A thin film transistor substrate includes: a substrate; and a first thin film transistor and a second thin film transistor that are disposed on the substrate. The first thin film transistor includes a first gate electrode and a first oxide semiconductor layer that is used as a channel. The second thin film transistor includes a second gate electrode and a second oxide semiconductor layer that is used as a channel. The first oxide semiconductor layer includes a first oxide semiconductor material that is different in mobility from a second oxide semiconductor material that the second oxide semiconductor layer includes.

Abstract: Provided is a highly reliable nickel-zinc battery including a separator exhibiting hydroxide ion conductivity and water impermeability. The nickel-zinc battery includes a positive electrode containing nickel hydroxide and/or nickel oxyhydroxide; a positive-electrode electrolytic solution in which the positive electrode is immersed, the electrolytic solution containing an alkali metal hydroxide; a negative electrode containing zinc and/or zinc oxide; a negative-electrode electrolytic solution in which the negative electrode is immersed, the electrolytic solution containing an alkali metal hydroxide; a hermetic container accommodating the positive electrode, the positive-electrode electrolytic solution, the negative electrode, and the negative-electrode electrolytic solution; and the separator exhibiting hydroxide ion conductivity and water impermeability and disposed in the hermetic container so as to separate a positive-electrode chamber from a negative-electrode chamber.

Abstract: A thin-film transistor (TFT) substrate is provided which includes: a substrate; a TFT disposed above the substrate; and a capacitor disposed above the substrate and electrically connected with the TFT, wherein the capacitor includes: a lower electrode layer disposed above the substrate and including an electrically conductive material as a main component; an upper electrode layer disposed above and opposed to the lower electrode layer and including, as a main component, an oxide semiconductor material to which electrical conductivity is given; and a capacitor insulating layer disposed between the lower electrode layer and the upper electrode layer. An extension extending outward from at least a portion of the outer edge of the lower electrode layer in plan view is provided to the lower electrode layer. In plan view, the upper electrode layer covers the lower electrode layer except the extension.

Abstract: A processing device includes a reception unit, a processing unit, and an output unit. The reception unit receives a process designated by a user. The processing unit performs the process received by the reception unit. The output unit outputs the process to an external apparatus capable of executing the process received by the reception unit. When the reception unit receives multiple processes, a process that is included in the multiple processes and in which an output from the processing device has to be obtained is performed in the processing device, and at least a part of a process that is included in the multiple processes and in which an output from the processing device does not have to be obtained is output to the external apparatus by the output unit.

Abstract: Provided is a connecting rod which can be manufactured without increasing the cost, and is provided with an effectively strengthened rod portion. The rod portion includes a pair of ribs (21) extending in parallel to each other in cross sectional view, and a web (22) connected between substantially vertically middle parts of the ribs. Each rib includes a rib root portion (23) located in a vertically central part thereof in cross sectional view, and a pair of rib tip portions (24) located at both vertical ends thereof, and each rib tip portion has a higher hardness than the web by 40 HV or more, and the rib root portion has a higher hardness than the web by 30 HV or more.

Abstract: Provided is a highly reliable nickel-zinc battery including a separator exhibiting hydroxide ion conductivity and water impermeability.

Abstract: An image processing apparatus includes an image acquisition section that acquires pieces of image data acquired by performing image reading in a sub scan direction in a unit of a line extending in a main scan direction, an orientation changing section that changes an orientation of each of data images represented by the respective pieces of image data acquired by the image acquisition section, and an image processing section that performs image processing serially on the pieces of image data acquired by the image acquisition section. The image processing section performs the image processing every predetermined number of pieces of image data serving as a predetermined processing unit. The image processing section changes the predetermined processing unit for the image processing to a processing unit different from the predetermined processing unit in a case where the orientation is changed by the orientation changing section.

Abstract: An image processing apparatus includes a first memory, a transfer unit, a second memory, and a processor. The first memory retains image data. The transfer unit reads from the first memory and transfers the image data for each area having a predetermined size. The second memory retains the image data of each area transferred by the transfer unit and allows random reading on a per address basis. The processor reads the image data from the second memory and performs a process for rotating an image for the read image data.

Abstract: An information processing apparatus includes: a print data acquisition unit that acquires print data; a layout information acquisition unit that acquires layout information concerning plural image forming parts that are aligned from an upstream side toward a downstream side in a moving direction of a transfer target that moves and form images of respective different colors on the transfer target; and an image information generation unit that generates pieces of image information for the respective colors used by the plural image forming parts from the print data during a generation period and generates image information used by an image forming part located on an upstream side in the moving direction more in a former half of the generation period than in a latter half of the generation period.

Abstract: A semiconductor device includes a substrate, a first wiring line, a semiconductor film, a second wiring line, and an insulating film. The substrate includes first, second, and third regions provided adjacently in this order in a predetermined direction. The first wiring line is provided on the substrate and provided in each of the first, second, and third regions. The semiconductor film has a low-resistance region in at least a portion thereof. The semiconductor film is provided between the first wiring line and the substrate in the first region, and is in contact with the first wiring line in the second region. The second wiring line is provided at a position closer to the substrate than the semiconductor film, and is in contact with the first wiring line in the third region. The insulating film is provided between the first wiring line and the semiconductor film in the first region.

Abstract: A thin-film transistor (TFT) substrate is provided which includes: a substrate; a TFT disposed above the substrate; and a capacitor disposed above the substrate and electrically connected with the TFT, wherein the capacitor includes: a lower electrode layer disposed above the substrate and including an electrically conductive material as a main component; an upper electrode layer disposed above and opposed to the lower electrode layer and including, as a main component, an oxide semiconductor material to which electrical conductivity is given; and a capacitor insulating layer disposed between the lower electrode layer and the upper electrode layer. An extension extending outward from at least a portion of the outer edge of the lower electrode layer in plan view is provided to the lower electrode layer. In plan view, the upper electrode layer covers the lower electrode layer except the extension.

Abstract: An image forming apparatus includes: a first information processing unit that performs information processing for image formation on obtained image data by an image processing specific program; and a second information processing unit that performs information processing for image formation on the image data by a general-purpose processing program also performing processing other than image processing when a value related to the information processing by the first information processing unit satisfies a predetermined condition.

Abstract: Provided is a connecting rod which can be manufactured without increasing the cost, and is provided with an effectively strengthened rod portion. The rod portion includes a pair of ribs (21) extending in parallel to each other in cross sectional view, and a web (22) connected between substantially vertically middle parts of the ribs. Each rib includes a rib root portion (23) located in a vertically central part thereof in cross sectional view, and a pair of rib tip portions (24) located at both vertical ends thereof, and each rib tip portion has a higher hardness than the web by 40 HV or more, and the rib root portion has a higher hardness than the web by 30 HV or more.