Abstract: The present invention provides a viewing system capable of providing varying visual effects with a simpler configuration. In addition, the present invention also provides a display device, a stage installation, and a polymerizable liquid crystal composition.

Abstract: A cellulose ester film contains a compound having a structural unit denoted by —NR—(C?O)— in which R represents a hydrogen atom or a substituent, a surface having knoop hardness of greater than or equal to 210 N/mm2 is provided, and loss tangent tan ? at 25° C. is greater than or equal to 0.03.

Abstract: A light receiving element includes: a semiconductor layer including a first layer, a light absorbing layer, a second layer, and a third layer, the semiconductor layer having a plurality of mesas, a terrace, and a groove; a first electrode provided on the mesas and electrically connected to the third layer; a first bump provided on the first electrode and electrically connected to the first electrode; a second electrode provided on a portion extending from the terrace to an inner side of the groove and electrically connected to the first layer; and a second bump larger than the first bump, is provided on the terrace, and is electrically connected to the second electrode, wherein the mesas and the terrace include the semiconductor layer, the groove extends to the first layer, and the second electrode is in contact with the first layer on an inner side of the groove.

Abstract: A half mirror includes a circularly polarized light reflecting layer including a cholesteric liquid crystal layer, a barrier layer, a bonding layer, and a front panel. The barrier layer, which is, for example, a layer formed by curing a composition containing a urethane (meth)acrylate monomer, is disposed between the bonding layer and the circularly polarized light reflecting layer.

Abstract: A transfer sheet includes a cured liquid crystal composition layer, a block layer including a (meth)acrylic polymer, and a thermoplastic welded layer in this order, the thermoplastic welded layer and the block layer are in direct contact with each other, and the thermoplastic welded layer includes a thermoplastic resin and an ultraviolet curable resin.

Abstract: The inventions are an optical film containing cellulose acylate and a compound having a structure denoted by General Formula (A) described below, and a polarizing plate and a liquid crystal display device employing the optical film. L represents n-valent connecting group, n represents an integer of greater than or equal to 2, and A represents a heterocyclic group denoted by General Formula (I). R1, R3, and R5 represent a hydrogen atom, an alkyl group, a cycloalkyl group, an alkenyl group, an aryl group, or a heteroaryl group. Here, any one of R1, R3, and R5 is bonded to L.

Abstract: A light receiving element includes: a semiconductor layer including a first layer, a light absorbing layer, a second layer, and a third layer, the semiconductor layer having a plurality of mesas, a terrace, and a groove; a first electrode provided on the mesas and electrically connected to the third layer; a first bump provided on the first electrode and electrically connected to the first electrode; a second electrode provided on a portion extending from the terrace to an inner side of the groove and electrically connected to the first layer; and a second bump larger than the first bump, is provided on the terrace, and is electrically connected to the second electrode, wherein the mesas and the terrace include the semiconductor layer, the groove extends to the first layer, and the second electrode is in contact with the first layer on an inner side of the groove.

Abstract: An optical switch includes a first optical absorbing layer sensitive to a first light and having a first superlattice structure and a first bandgap; a second optical absorbing layer sensitive to a second light and having a second bandgap smaller than that of the first bandgap; and a barrier layer having a second superlattice structure. The first optical absorbing layer, the second optical absorbing layer, and the barrier layer are arranged in a direction of an axis to form an arrangement with a first band-offset in a conduction band of the first optical absorbing layer, a second band-offset in a conduction band of the barrier layer, and a well in a conduction band of the second optical absorbing layer.

Abstract: An infrared detecting semiconductor device comprises: an optical absorbing layer of type-II disposed between first conductivity-type and second conductivity-type semiconductor layers; and an optical filtering film of n-type InGaAs having an n-type dopant concentration larger than 8×1017 cm?3. The optical filtering film includes first to third semiconductor regions, which are sequentially arranged in a direction of a first axis on the optical filtering film. The first semiconductor region has an n-type dopant concentration of 2.0×1019 cm?3 or more. The third semiconductor region has a n-type concentration of 3.0×1018 cm?3 or less. The second semiconductor region has an n-type dopant profile monotonically changing from a first dopant concentration at a boundary between the first and second semiconductor regions to a second dopant concentration at a boundary between the second and third semiconductor regions. The first dopant concentration is greater than the second dopant concentration.

Abstract: An infrared light-receiving device includes an optical absorption layer disposed on a principal surface of a substrate and an optical filter disposed on the optical absorption layer, the optical filter including first, second, and third semiconductor regions that are arranged in that order in a direction from the optical absorption layer to the optical filter, each of the first, second, and third semiconductor regions including an n-type InGaAs layer. The optical absorption layer includes a type-II superlattice structure. The first semiconductor region contains an n-type impurity with a concentration of 2.0×1019 cm?3 or more. The third semiconductor region contains an n-type impurity with a concentration of 3.0×1018 cm?3 or less and 8.0×1017 cm?3 or more. The second semiconductor region contains an n-type impurity with a concentration between the impurity concentration of the first semiconductor region and the impurity concentration of the second semiconductor region.

Abstract: The polymer film comprises a carbonyl bond-containing polymer and a compound having ?h of equal to or higher than 11.0 and ?? of equal to or lower than 1.50, wherein the ?h is a value of hydrogen-bonding capacity calculated by Hoy method and the ?? is a value calculated by equation 1: ??=|x?13.3|??Equation 1 wherein, in equation 1, ? represents an interatomic distance in the polymer film between atoms most distant from each other among molecules in the compound, excluding a hydrogen atom, calculated by molecular dynamics calculation.

Abstract: A semiconductor light receiving device includes: a substrate; and a photodiode dispose on the substrate. The photodiode has an optical absorbing layer disposed on the substrate, the optical absorbing layer having an InGaAs/GaAsSb superlattice, a first bulk semiconductor layer disposed between the substrate and the InGaAs/GaAsSb superlattice, and a second bulk semiconductor layer having a bandgap energy smaller than that of InGaAs, the second bulk semiconductor layer making contact with the first bulk semiconductor layer. The first bulk semiconductor layer includes p-type InGaAs. The second bulk semiconductor layer includes a group III antimony compound, the group III antimony compound containing gallium as group III constituent element.

Abstract: A cellulose acylate film, which includes a compound denoted by general formula (I) below, the equivalent U of which, calculated as a value obtained by dividing the molecular weight of the compound by the number of divalent linking groups denoted by —O—C(?O)—NH— contained per molecule, is less than or equal to 515, wherein, in general formula (I), each of L11 and L21 independently denotes an optionally substituted alkylene group; each of L12 and L22 independently denotes a single bond, any one of or any combination of —O—, —NR1—, —S— and —C(?O)—; R1 denotes a hydrogen atom or a substituent; each of n1 and n2 independently denotes an integer of 0 to 20, with at least either n1 or n2 being an integer of greater than or equal to 1.

Abstract: An optical switch comprises: a first optical absorbing layer sensitive to a first light, first optical absorbing layer including a first superlattice structure and having a first bandgap; a second optical absorbing layer sensitive to a second light, the second optical absorbing layer having a second bandgap smaller than that of the first bandgap; and a barrier layer including a second superlattice structure, the first optical absorbing layer, the second optical absorbing layer, and the barrier layer being arranged in a direction of a first axis to form an arrangement, the arrangement forming a first band-offset in a conduction band of the first optical absorbing layer, a second band-offset in a conduction band of the first optical absorbing layer, and a well in a conduction band of the second optical absorbing layer.

Abstract: The present invention provides a polymerizable composition including a polymerizable liquid crystal compound of Formula (I) and a urethane (meth)acrylate monomer including a urethane bond and three or more (meth)acryloyl groups; Q1-Sp1?A-L?m-1A-Sp2-Q2??(I) A represents a cyclic divalent group (at least one thereof is a divalent saturated hydrocarbon ring group), L represents —C(?O)O—, —OC(?O)—, and the like, and m represents 3 to 12, Sp1 and Sp2 are alkylene and the like, any one of Q1 and Q2 represents a polymerizable group; a film including a layer obtained by curing the polymerizable composition; and a film adjacently including a layer obtained by curing polymerizable composition including a polymerizable liquid crystal compound represented by Formula (I) and a layer obtained by curing composition including a urethane (meth)acrylate monomer and a manufacturing method thereof.

Abstract: The present invention is to provide a polymerizable liquid crystal compound represented by Formula (I); Q1-Sp1?A-L?m-1A-Sp2-Q2??(I) A represents a divalent nitrogen-containing saturated cyclic group (that may have a substituent) formed by removing two hydrogen atoms from piperidine or piperazine, a phenylene group that may have a substituent, or a trans-1,4-cyclohexylene group that may have a substituent, L represents —C(?O)O—, —OC(?O)—, or the like, m represents 3 to 12, Sp1 and Sp2 represent an alkylene group having 1 to 20 carbon atoms, any one of Q1 and Q2 represents a polymerizable group, Formula (I) has a nitrogen-containing saturated cyclic group and a phenylene group that are directly bonded to each other via —C(?O)O—. By using a polymerizable composition including the polymerizable liquid crystal compound, a film such as a retardation film having low birefringence or a reflection film having high selectivity in a reflection wavelength range can be provided.

Abstract: A semiconductor device is provided which realizes speed-up and cost reduction. The semiconductor device has a high side gate driver including a depression type FET and an enhancement type FET, a low side gate driver including a depression type FET and an enhancement type FET, and a high side power FET and a low side power FET as field-effect transistors, in which the high side gate driver, the low side gate driver, the high side power FET and the low side power FET are integrated in the same chip.

Abstract: An optical film comprising a cellulose acylate film which comprises a compound denoted by formula 2 below: wherein each of R10 and R11 independently denotes a substituent linked to the triazine ring through —NR12— or —CO—; R12 denotes a hydrogen atom or an optionally substituted alkyl group; n denotes 1; and —X1—R1 is selected from the group consisting of partial structures 11 to 14:

Abstract: Provided are a semiconductor device and an optical sensor device, each having reduced dark current, and detectivity extended toward longer wavelengths in the near-infrared. Further, a method for manufacturing the semiconductor device is provided. The semiconductor device 50 includes an absorption layer 3 of a type II (GaAsSb/InGaAs) MQW structure located on an InP substrate 1, and an InP contact layer 5 located on the MQW structure. In the MQW structure, a composition x (%) of GaAsSb is not smaller than 44%, a thickness z (nm) thereof is not smaller than 3 nm, and z??0.4x+24.6 is satisfied.

Abstract: An infrared image sensor includes a bias circuit receiving a timing signal, the bias circuit generating a bias voltage having a first value and a second value in response to the timing signal; a semiconductor light-receiving device including a photodiode, the semiconductor light-receiving device receiving the bias voltage; a read-out circuit including a read-out electrode connected to the photodiode, the read-out electrode receiving an electrical signal from the photodiode; and a signal processing circuit processing a read-out signal from the read-out circuit synchronously with the timing signal. The photodiode includes an optical absorption layer made of a III-V group compound semiconductor. The optical absorption layer has a type II multi quantum well structure including first compound semiconductor layers containing antimony as a constituent element and second compound semiconductor layers that are stacked alternately.