Abstract: The present invention provides a light receiving element array etc., having a high light-reception sensitivity in the near-infrared region, an optical sensor device, and a method for producing the light receiving element array. A light receiving element array 55 includes an n-type buffer layer 2 disposed on an InP substrate 1, an absorption layer 3 having a type-II MQW, a contact layer 5 disposed on the absorption layer, and a p-type region extending to the n-type buffer layer 2 through the absorption layer 3, wherein the p-type region formed by selective diffusion is separated from the p-type region of an adjacent light receiving element by a region that is not subjected to selective diffusion, and, in the n-type buffer layer, a p-n junction 15 is formed on a crossed face of a p-type carrier concentration of the p-type region and an n-type carrier concentration of the buffer layer.

Abstract: There is provided a cellulose acylate film, containing a hindered amin-based compound, wherein the hindered amine-based compound is contained in an amount of 0.001% by mass to 5% by mass based on cellulose acylate, a minimum value of Knoop hardness is 170 N/mm2 to 220 N/mm2, and the Knoop hardness is measured several times by a Knoop indenter, the Knoop indenter is rotated by a given angle in each measurement, and a rotation axis of the Knoop indenter is orthogonal to an upper surface of the cellulose acylate film.

Abstract: A technology is provided which ensures a high security without affecting a plant operation. A plant security managing device includes a determining unit that determines which one of control units multiplexed as a service system and a standby system associated with monitoring and controlling of a plant is the standby system, a security processing unit that performs a security process for detecting the presence/absence of a security abnormality on the control unit that is the standby system, and a change instructing unit that outputs an instruction for changing the control unit that is the standby system and the control unit that is the service system with each other after the completion of the security process by the security processing unit.

Abstract: An image sensor includes a package having a window; a sensor chip facing the window, the sensor chip having a pixel region, the sensor chip having an electrode; a read-out circuit disposed farther from the window than the sensor chip, the read-out circuit having a read-out electrode connected to the electrode of the sensor chip; and a shielding plate disposed outside the pixel region of the sensor chip. The shielding plate is configured to block transmission of light.

Abstract: Provided is a high-strength zirconia sintered body in which the progression of low-temperature degradation is inhibited. The zirconia sintered body contains partially-stabilized zirconia as a matrix phase and contains at least one element from among phosphorus (P), arsenic (As), antimony (Sb), and bismuth (Bi). The content of the abovementioned element(s) in the zirconia sintered body ranges from 4×10?4 mol to 4×10?2 mol with respect to 1 mol of zirconium(IV) oxide. Preferably, the zirconia sintered body further contains 0.03% to 3% by mass of silicon dioxide.

Abstract: Provided are a light receiving element etc. which have a high responsivity over the near- to mid-infrared region and stably have a high quality while maintaining the economical efficiency. The light receiving element includes an InP substrate that is transparent to light having a wavelength of 3 to 12 ?m, a middle layer that is epitaxially grown on the InP substrate, a GaSb buffer layer located in contact with the middle layer, and a light-receiving layer that is epitaxially grown on the GaSb buffer layer and that has a type-II multiple quantum well structure. The GaSb buffer layer is epitaxially grown on the middle layer while exceeding a range of a normal lattice-matching condition.

Abstract: A photodetector and a method of manufacturing the photodetector are provided, in which variation in sensitivity is suppressed over the near-infrared region from the short wavelength side including 1.3 ?m to the long wavelength side. The photodetector includes, on an InP substrate, an absorption layer of a type II multiple quantum well structure comprising a repeated structure of a GaAsSb layer and an InGaAs layer, and has sensitivity in the near-infrared region including wavelengths of 1.3 ?m and 2.0 ?m. The ratio of the sensitivity at the wavelength of 1.3 ?m to the sensitivity at the wavelength of 2.0 ?m is not smaller than 0.5 but not larger than 1.6.

Abstract: A quantum cascade semiconductor laser includes a n-type semiconductor substrate, the substrate having a main surface; a mesa waveguide disposed on the substrate, the mesa waveguide including a core layer and an n-type upper cladding layer disposed on the core layer; a first semiconductor layer disposed on a side surface of the mesa waveguide and the main surface of the substrate, the first semiconductor layer being in contact with the side surface of the mesa waveguide; and a second semiconductor layer disposed on the first semiconductor layer. The first semiconductor layer and the second semiconductor layer constitute a burying region embedding the side surfaces of the mesa waveguide. The first semiconductor layer is formed of at least one of a semi-insulating semiconductor and a p-type semiconductor. In addition, the second semiconductor layer is formed of an n-type semiconductor.

Abstract: An active layer having a type 2 multi-quantum well structure includes a plurality of pair thickness groups having different thicknesses, including a first pair thickness group and a second pair thickness group. The first pair thickness group g1 includes 10 to 100 pairs, each monolayer of the pairs having a thickness of 1.5 nm or more and less than 3.5 nm. The second pair thickness group g2 includes 10 to 100 pairs, each monolayer of the pairs having a thickness of the minimum thickness (a second group minimum thickness) or more and 7 nm or less, the minimum thickness being larger than the maximum monolayer thickness 3.5 nm of the first pair thickness group.

Abstract: Disclosed is a polymer film excellent in performance of inducing Rth.

Abstract: A light-receiving element includes a group III-V compound semiconductor stacked structure that includes an absorption layer having a pn-junction therein. The stacked structure is formed on a group III-V compound semiconductor substrate. The absorption layer has a multiquantum well structure composed of group III-V compound semiconductors, and the pn-junction is formed by selectively diffusing an impurity element into the absorption layer. A diffusion concentration distribution control layer composed of a III-V group semiconductor is disposed in contact with the absorption layer on a side of the absorption layer opposite the side adjacent to the group III-V compound semiconductor substrate. The bandgap energy of the diffusion concentration distribution control layer is smaller than that of the group III-V compound semiconductor substrate. The concentration of the impurity element selectively diffused in the diffusion concentration distribution control layer is 5×1016/cm3 or less toward the absorption layer.

Abstract: A cellulose acetate resin composition having a cellulose acetate ether compound and a stabilizer; the cellulose acetate ether compound comprising a specific atomic group, the specific atomic group being introduced into a cellulose acetate through an ether group derived from a hydroxyl group, the specific atomic group being introduced with a substitution degree of 0.01 or more; the cellulose acetate comprising residual hydroxyl group in a substitution degree of 0.3 to 1.0, the stabilizer being at least one selected from the group consisting of a phosphite compound, a hindered phenol compound, a hindered amine compound, and a sulfur compound.

Abstract: An active layer having a type 2 multi-quantum well structure includes a plurality of pair thickness groups having different thicknesses, including a first pair thickness group and a second pair thickness group. The first pair thickness group g1 includes 10 to 100 pairs, each monolayer of the pairs having a thickness of 1.5 nm or more and less than 3.5 nm. The second pair thickness group g2 includes 10 to 100 pairs, each monolayer of the pairs having a thickness of the minimum thickness (a second group minimum thickness) or more and 7 nm or less, the minimum thickness being larger than the maximum monolayer thickness 3.5 nm of the first pair thickness group.

Abstract: A light-receiving element includes an InP substrate 1, a light-receiving layer 3 having an MQW and located on the InP substrate 1, a contact layer 5 located on the light-receiving layer 3, a p-type region 6 extending from a surface of the contact layer 5 to the light-receiving layer, and a p-side electrode 11 that forms an ohmic contact with the p-type region. The light-receiving element is characterized in that the MQW has a laminated structure including pairs of an InxGa1-xAs (0.38?x?0.68) layer and a GaAs1-ySby (0.25?y?0.73) layer, and in the GaAs1-ySby layer, the Sb content y in a portion on the InP substrate side is larger than the Sb content y in a portion on the opposite side.

Abstract: [Object] To provide a gas monitoring device etc. with which gas monitoring can be preformed at high sensitivity by using an InP-based photodiode in which a dark current is reduced without a cooling mechanism and the sensitivity is extended to a wavelength of 1.8 ?m or more. [Solution] An absorption layer 3 has a multiquantum well structure composed of group III-V semiconductors, a pn-junction 15 is formed by selectively diffusion of an impurity element in the absorption layer, and the concentration of the impurity element in the absorption layer is 5×1016/cm3 or less. The gas monitoring device detects a gas component and the like contained in a gas by receiving light having at least one wavelength of 3 ?m or less.

Abstract: A light-receiving element includes a III-V group compound semiconductor substrate, a light-receiving layer having a type II multi-quantum well structure disposed on the substrate, and a type I wavelength region reduction means for reducing light in a wavelength region of type I absorption in the type II multi-quantum well structure disposed on a light incident surface or between the light incident surface and the light-receiving layer.

Abstract: A quantum cascade semiconductor laser includes a n-type semiconductor substrate, the substrate having a main surface; a mesa waveguide disposed on the substrate, the mesa waveguide including a core layer and an n-type upper cladding layer disposed on the core layer; a first semiconductor layer disposed on a side surface of the mesa waveguide and the main surface of the substrate, the first semiconductor layer being in contact with the side surface of the mesa waveguide; and a second semiconductor layer disposed on the first semiconductor layer. The first semiconductor layer and the second semiconductor layer constitute a burying region embedding the side surfaces of the mesa waveguide. The first semiconductor layer is formed of at least one of a semi-insulating semiconductor and a p-type semiconductor. In addition, the second semiconductor layer is formed of an n-type semiconductor.

Abstract: An object of the present invention is to provide, for example, a photodiode that can have sufficiently high sensitivity in a near-infrared wavelength range of 1.5 ?m to 1.8 ?m and can have a low dark current. A photodiode (10) according to the present invention includes a buffer layer (2) positioned on and in contact with an InP substrate (1), and an absorption layer (3) positioned on and in contact with the buffer layer, wherein the absorption layer includes 50 or more pairs in which a first semiconductor layer 3a and a second semiconductor layer 3b constitute a single pair, the first semiconductor layer 3a having a bandgap energy of 0.73 eV or less, the second semiconductor layer 3b having a larger bandgap energy than the first semiconductor layer 3a, and the first semiconductor layer 3a and the second semiconductor layer 3b constitute a strain-compensated quantum well structure and each have a thickness of 1 nm or more and 10 nm or less.

Abstract: In an imprinting method for transferring a pattern of a mold to a resin coated on a substrate by using an imprinting apparatus including a mold holding unit and a resin coating unit, the resin is coated in n shot areas arranged in a direction parallel to a direction in which the holding unit and the coating unit are arranged where n is an integer equal to or greater than 2, and the pattern is transferred to the shot areas on a one-by-one basis. A distance D between the coating unit and the mold and a width W of each shot area as seen in the direction parallel to the direction in which the holding unit and the coating unit are arranged are selected so as to satisfy a condition D>(3/2?1/n)W, and the coating and the transferring are performed repeatedly on the substrate.

Abstract: A light receiving element includes an InP substrate that is transparent to light having a wavelength of 3 to 12 ?m, a buffer layer located in contact with the InP substrate, and a light-receiving layer having a multiple quantum well structure, the light-receiving layer having a cutoff wavelength of 3 ?m or more and being lattice-matched with the buffer layer. In the light receiving element, the buffer layer is epitaxially grown on the InP substrate while the buffer layer and the InP substrate exceed a range of a normal lattice-matching condition, and the buffer layer is constituted by a GaSb layer.