Abstract: A storage element includes a storage layer, a fixed magnetization layer, a spin barrier layer, and a spin absorption layer. The storage layer stores information based on a magnetization state of a magnetic material. The fixed magnetization layer is provided for the storage layer through a tunnel insulating layer. The spin barrier layer suppresses diffusion of spin-polarized electrons and is provided on the side of the storage layer opposite the fixed magnetization layer. The spin absorption layer is formed of a nonmagnetic metal layer causing spin pumping and provided on the side of the spin barrier layer opposite the storage layer. A direction of magnetization in the storage layer is changed by passing current in a layering direction to inject spin-polarized electrons so that information is recorded in the storage layer and the spin barrier layer includes at least a material selected from oxides, nitrides, and fluorides.

Abstract: There is provided a battery holder including: a plurality of battery cell receiving sections for receiving a battery cell. A deformation section elastically deformed depending on transmission of external impact, and a space section for allowing the deformation section to be elastically deformed are formed between a peripheral surface of one battery cell receiving section and a peripheral surface of another battery cell receiving section.

Abstract: The present invention addresses the problem of providing an antibody titer-increasing agent, such as an adjuvant, capable of sustaining an effect achieved by, for example, vaccination, which is an antibody titer-increasing agent such as an adjuvant that is safe, convenient and economical and can be easily taken irrespective of age, and a method for manufacturing the same. A method for increasing an antibody titer and a method for enhancing the effect of a vaccine, each method comprising using Lactobacillus delbrueckii subspecies bulgaricus OLL1073R-1 or a culture thereof; and an antibody titer-increasing agent such as an adjuvant that comprises Lactobacillus delbrueckii subspecies bulgaricus OLL1073R-1 or a culture thereof.

Abstract: A storage element including a storage layer configured to hold information by use of a magnetization state of a magnetic material, with a pinned magnetization layer being provided on one side of the storage layer, with a tunnel insulation layer, and with the direction of magnetization of the storage layer being changed through injection of spin polarized electrons by passing a current in the lamination direction, so as to record information in the storage layer, wherein a spin barrier layer configured to restrain diffusion of the spin polarized electrons is provided on the side, opposite to the pinned magnetization layer, of the storage layer; and the spin barrier layer includes at least one material selected from the group composing of oxides, nitrides, and fluorides.

Abstract: A storage element including a storage layer configured to hold information by use of a magnetization state of a magnetic material, with a pinned magnetization layer being provided on one side of the storage layer, with a tunnel insulation layer, and with the direction of magnetization of the storage layer being changed through injection of spin polarized electrons by passing a current in the lamination direction, so as to record information in the storage layer, wherein a spin barrier layer configured to restrain diffusion of the spin polarized electrons is provided on the side, opposite to the pinned magnetization layer, of the storage layer; and the spin barrier layer includes at least one material selected from the group composing of oxides, nitrides, and fluorides.

Abstract: A storage element includes a storage layer, a fixed magnetization layer, a spin barrier layer, and a spin absorption layer. The storage layer stores information based on a magnetization state of a magnetic material. The fixed magnetization layer is provided for the storage layer through a tunnel insulating layer. The spin barrier layer suppresses diffusion of spin-polarized electrons and is provided on the side of the storage layer opposite the fixed magnetization layer. The spin absorption layer is formed of a nonmagnetic metal layer causing spin pumping and provided on the side of the spin barrier layer opposite the storage layer. A direction of magnetization in the storage layer is changed by passing current in a layering direction to inject spin-polarized electrons so that information is recorded in the storage layer and the spin barrier layer includes at least a material selected from oxides, nitrides, and fluorides.

Abstract: A storage element including a storage layer configured to hold information by use of a magnetization state of a magnetic material, with a pinned magnetization layer being provided on one side of the storage layer, with a tunnel insulation layer, and with the direction of magnetization of the storage layer being changed through injection of spin polarized electrons by passing a current in the lamination direction, so as to record information in the storage layer, wherein a spin barrier layer configured to restrain diffusion of the spin polarized electrons is provided on the side, opposite to the pinned magnetization layer, of the storage layer; and the spin barrier layer includes at least one material selected from the group composing of oxides, nitrides, and fluorides.

Abstract: A storage element including a storage layer configured to hold information by use of a magnetization state of a magnetic material, with a pinned magnetization layer being provided on one side of the storage layer, with a tunnel insulation layer, and with the direction of magnetization of the storage layer being changed through injection of spin polarized electrons by passing a current in the lamination direction, so as to record information in the storage layer, wherein a spin barrier layer configured to restrain diffusion of the spin polarized electrons is provided on the side, opposite to the pinned magnetization layer, of the storage layer; and the spin barrier layer includes at least one material selected from the group composing of oxides, nitrides, and fluorides.

Abstract: A battery pack is provided. The battery pack including a plurality of battery cells; a cell holder including a peripheral wall and a plurality of cell storage units; and a plurality of ribs integrally molded with the cell holder between the peripheral wall of the cell holder and the cell storage unit.

Abstract: A storage element includes a storage layer, a fixed magnetization layer, a spin barrier layer, and a spin absorption layer. The storage layer stores information based on a magnetization state of a magnetic material. The fixed magnetization layer is provided for the storage layer through a tunnel insulating layer. The spin barrier layer suppresses diffusion of spin-polarized electrons and is provided on the side of the storage layer opposite the fixed magnetization layer. The spin absorption layer is formed of a nonmagnetic metal layer causing spin pumping and provided on the side of the spin barrier layer opposite the storage layer. A direction of magnetization in the storage layer is changed by passing current in a layering direction to inject spin-polarized electrons so that information is recorded in the storage layer and the spin barrier layer includes at least a material selected from oxides, nitrides, and fluorides.

Abstract: There is provided a battery holder including: a plurality of battery cell receiving sections for receiving a battery cell. A deformation section elastically deformed depending on transmission of external impact, and a space section for allowing the deformation section to be elastically deformed are formed between a peripheral surface of one battery cell receiving section and a peripheral surface of another battery cell receiving section.

Abstract: A battery pack includes: a plurality of battery cells (1); a cell support that holds the plurality of battery cells; a connection part (6) that connects to the plurality of battery cells; and a circuit substrate (8) that is used to mount circuits for the plurality of battery cells. The cell support (2) is integrally formed with battery cell storage units (3) that store the plurality of battery cells, a base unit (4) that supports the battery cell storage units, and impact relaxation ribs (21), and each of the impact relaxation ribs is formed between an outer circumference of the base unit and an exterior surface of each of the battery cell storage units, and is configured in a shape capable of being transformed in a direction to which impact is applied.

Abstract: A photographing apparatus includes an image sensor which images a plurality of images; an image processor configured to set one image as a reference image and each remaining image as a comparative image; an image processor configured to generate a reference map divided into blocks; an image processor configured to generate a comparative map divided into blocks; an image processor configured to generate a change-detection map indicating coinciding or non-coinciding blocks between the reference map and the comparative map, per each respective block, upon the reference map and the comparative map being compared; an image processor configured to obtain a synthesized image of the images; and an image processor configured to replace at least a part of the synthesized image with a corresponding part of the reference image based on the change-detection map.

Abstract: A storage element including a storage layer configured to hold information by use of a magnetization state of a magnetic material, with a pinned magnetization layer being provided on one side of the storage layer, with a tunnel insulation layer, and with the direction of magnetization of the storage layer being changed through injection of spin polarized electrons by passing a current in the lamination direction, so as to record information in the storage layer, wherein a spin barrier layer configured to restrain diffusion of the spin polarized electrons is provided on the side, opposite to the pinned magnetization layer, of the storage layer; and the spin barrier layer includes at least one material selected from the group composing of oxides, nitrides, and fluorides.

Abstract: A storage element including a storage layer configured to hold information by use of a magnetization state of a magnetic material, with a pinned magnetization layer being provided on one side of the storage layer, with a tunnel insulation layer, and with the direction of magnetization of the storage layer being changed through injection of spin polarized electrons by passing a current in the lamination direction, so as to record information in the storage layer, wherein a spin barrier layer configured to restrain diffusion of the spin polarized electrons is provided on the side, opposite to the pinned magnetization layer, of the storage layer; and the spin barrier layer includes at least one material selected from the group composing of oxides, nitrides, and fluorides.

Abstract: A storage element includes a storage layer, a fixed magnetization layer, a spin barrier layer, and a spin absorption layer. The storage layer stores information based on a magnetization state of a magnetic material. The fixed magnetization layer is provided for the storage layer through a tunnel insulating layer. The spin barrier layer suppresses diffusion of spin-polarized electrons and is provided on the side of the storage layer opposite the fixed magnetization layer. The spin absorption layer is formed of a nonmagnetic metal layer causing spin pumping and provided on the side of the spin barrier layer opposite the storage layer. A direction of magnetization in the storage layer is changed by passing current in a layering direction to inject spin-polarized electrons so that information is recorded in the storage layer and the spin barrier layer includes at least a material selected from oxides, nitrides, and fluorides.

Abstract: There is provided a battery holder including: a plurality of battery cell receiving sections for receiving a battery cell. A deformation section elastically deformed depending on transmission of external impact, and a space section for allowing the deformation section to be elastically deformed are formed between a peripheral surface of one battery cell receiving section and a peripheral surface of another battery cell receiving section.

Abstract: A battery pack includes a battery cell, a circuit board, and a holder. The battery cell includes a battery device covered with a laminate film. The circuit board is connected to the battery cell. The holder includes a cell holder that covers the battery cell and a circuit board holder that covers the circuit board. In battery pack, the circuit board holder covering the circuit board is arranged in a space formed above a terrace portion of the battery cell covered with the cell holder.

Abstract: An electric storage device includes a storage module and a mounting plate. The storage module includes a plurality of storage cells stacked in a stacking direction and has an end surface in the stacking direction. The storage module is mounted on the mounting plate. The mounting plate includes a fastening part and a displacement absorbing part. The storage module is connected to the mounting plate at the fastening part. The displacement absorbing part absorbs displacement of the storage module in the stacking direction. The fastening part is provided between the displacement absorbing part and the end surface of the storage module in the stacking direction.

Abstract: A photographing apparatus includes an image sensor which images a plurality of images; an image processor configured to set one image as a reference image and each remaining image as a comparative image; an image processor configured to generate a reference map divided into blocks; an image processor configured to generate a comparative map divided into blocks; an image processor configured to generate a change-detection map indicating coinciding or non-coinciding blocks between the reference map and the comparative map, per each respective block, upon the reference map and the comparative map being compared; an image processor configured to obtain a synthesized image of the images; and an image processor configured to replace at least a part of the synthesized image with a corresponding part of the reference image based on the change-detection map.