Abstract: A memory device includes: a memory layer that retains information based on a magnetization state of a magnetic material, a first intermediate layer and a second intermediate layer that are provided to sandwich the memory layer and are each formed of an insulator, a first fixed magnetic layer disposed on an opposite side of the first intermediate layer from the memory layer, a second fixed magnetic layer disposed on an opposite side of the second intermediate layer from the memory layer, and a nonmagnetic conductive layer provided between either the first intermediate layer or the second intermediate layer and the memory layer, the memory device being configured so that spin-polarized electrons are injected thereinto in a stacking direction to change the magnetization direction of the memory layer, thereby storing information in the memory layer.

Abstract: A recording method for a magnetic memory device that includes applying, when recording one piece of information, one or more main pulses and one or more sub-pulses in the same direction and applying the one or more sub-pulses after the one or more main pulses, the one or more main pulses each being a pulse that has a sufficient pulse height and pulse width to record information, the one or more sub-pulses each being a pulse that satisfies at least one of conditions that a pulse width is shorter than that of the one or more main pulses and that a pulse height is smaller than that of the one or more main pulses.

Abstract: The present invention provides a mass media video player which comprises an edge blending apparatus for video signals, plurality of projectors, a plurality of reflector assemblies and a screen. By making use of the optical projection effect, the images projected from the plural projectors are reflected by plural reflector assemblies so as to maximize the size of the image area on screen, and at the same time makes the distance between the screen and the projector as short as possible.

Abstract: A resistance variable memory device is provided and includes a resistance variable memory cell that writes data by utilizing a spin transfer effect based on an injection current. The memory device also includes a driving circuit that generates a combined pulse of a plurality of write pulses and an offset pulse defining the level between the write pulses and supplies the combined pulse to the memory cell at the time of the writing.

Abstract: An aluminum alloy brazing sheet having high strength comprising: a core alloy; an Al—Si-based filler alloy cladded on one side or both sides of the core alloy, wherein the core alloy is composed of an aluminum alloy containing 0.3-1.2% (mass %, the same applies the below) Si, 0.05-0.4% Fe, 0.3-1.2% Cu, 0.3-1.8% Mn, 0.05-0.6% Mg, and containing one or more elements selected from the group consisting of 0.02-0.3% Ti, 0.02-0.3% Zr, 0.02-0.3% Cr and 0.02-0.3% V, the balance of Al and unavoidable impurities; and wherein, after the aluminum alloy brazing sheet is subjected to brazing, the core alloy features a metallic structure in which a density of intermetallic compounds having a grain diameter of at least 0.1 ?m is at most ten grains per ?m2.

Abstract: The inventors have found that vitamin K3 and vitamin K5 which may be used in pharmaceuticals and foods or ACNQ, DHNA, or the like which can stimulate the growth of bifidobacteria can inhibit degranulation of basophil-like cells, exhibit a potent degranulation-inhibiting effect, and are useful anti-allergic agents or foods. The present invention provides an anti-allergic agent containing, as an active ingredient, one or more species selected from among 2-amino-3-carboxy-1,4-naphthoquinone, 1,4-dihydroxy-2-naphthoic acid, 1,4-naphthoquinone, 4-amino-2-methyl-1-naphthol, 2-methyl-1,4-naphthoquinone, 2-amino-3-chloro-1,4-naphthoquinone, and a salt thereof.

Abstract: Disclosed is a memory device including a memory layer retaining information thereon based on a magnetization state of a magnetic body, a fixed-magnetization layer having a fixed-magnetization direction formed on the memory layer through a non-magnetic layer, and two metal wiring lines formed adjacent to both ends of the fixed-magnetization layer. In the memory, the magnetization direction of the memory layer is changed by passing an electric current therethrough in a stacked direction to record the information on the memory layer.

Abstract: A resistance-change memory device is provided and includes a stack constituting a tunnel magnetoresistance effect element that has a magnetic layer in which a direction of magnetization is switchable and that is formed on a conductive layer, and the stack is included in a resistance-change memory cell performing data writing utilizing a spin transfer effect caused by current injection. The stack is formed such that a line connecting centers of respective layers of the stack is tilted with respect to a direction perpendicular to a surface of the conductive layer having the stack formed thereon.

Abstract: In one example embodiment, a battery unit includes a battery case, and a plurality of battery blocks stored in the battery case. The plurality of battery blocks are electrically connected together in series. In one example embodiment, a first plurality of the battery blocks form a first column and are arranged in a side-to-side configuration. In one example embodiment, a second plurality of the battery blocks form a second column and are arranged in an end-to-end configuration which is different from the side-to-side configuration.

Abstract: A memory includes: a plurality of memory devices, each including a tunnel magnetic resistance effect device containing a magnetization free layer in which a direction of magnetization can be reversed, a tunnel barrier layer including an insulating material, and a magnetization fixed layer provided with respect to the magnetization free layer via the tunnel barrier layer with a fixed direction of magnetization; a random access memory area in which information is recorded using the direction of magnetization of the magnetization free layer of the memory device; and a read only memory area in which information is recorded depending on whether there is breakdown of the tunnel barrier layer of the memory device or not.

Abstract: A random number generating device includes: a random number generator configured to have a plurality of random number generating elements that generate a random number in response to supply of a spin-injection current; and a temperature controller.

Abstract: A storage element 3 has an arrangement in which magnetization fixed layers 31 and 32 are provided above and below a storage layer 17 for storing information based on the magnetization state of a magnetic material through intermediate layers 16 and 18, directions of magnetizations M15 and M19 of ferromagnetic layers 15 and 19 closest to the storage layer 17 of the magnetization fixed layers 31 and 32 above and below the storage layer 17 are opposite to each other, the two intermediate layers 16 and 18 above and below the storage layer 17 have a significant difference between sheet resistivity values thereof and in which the direction of a magnetization M1 of the storage layer 17 is changed with application of an electric current to the lamination layer direction to record information on the storage layer 17.

Abstract: [Object] To provide a recording method for a magnetic memory device including a recording layer that holds information as a magnetization direction of a magnetic body and a magnetization reference layer that is provided with respect to the recording layer with an insulation layer interposed therebetween, the magnetic memory device being recorded with information by a current flowing between the recording layer and the magnetization reference layer via the insulation layer, the recording method being capable of maintaining, even when a write pulse considerably higher than an inversion threshold value is applied, the same level of error rate as in a case where a write pulse a little higher than the inversion threshold value is applied.

Abstract: [Object] To provide a recording method for a magnetic memory device including a recording layer that is capable of changing a magnetization direction and holds information as a magnetization direction of a magnetic body and a magnetization reference layer that is provided with respect to the recording layer with an insulation layer interposed therebetween and becomes a reference of the magnetization direction, the magnetic memory device being recorded with information by a current flowing between the recording layer and the magnetization reference layer via the insulation layer, the recording method being capable of maintaining, even when a write pulse considerably higher than an inversion threshold value is applied, a write error rate of 10?25 or less that is obtained when a write pulse a little larger than the inversion threshold value is applied. [Solving Means] While taking time of 2 ns or more, write power injected at a time a write pulse falls is reduced gradually.

Abstract: Disclosed is a storage element having a storage layer retaining information based on a magnetization state of a magnetic material; a fixed-magnetization layer having a ferromagnetic layer; and an intermediate layer interposed between the storage layer and the fixed-magnetization layer. In the storage element, spin-polarized electrons are injected in a stacking direction to change a magnetization direction of the storage layer so that information is recorded in the storage layer, and resistivity of the ferromagnetic layer forming the storage layer is 8×10?7 ?m or more.

Abstract: A memory device is provided. The memory device includes a memory layer and a fixed-magnetization layer. The memory layer retains information based on a magnetization state of a magnetic material. The fixed-magnetization layer is formed on the memory layer through an intermediate layer made of an insulating material. The information is recorded on the memory layer with a change in a magnetization direction of the memory layer caused by injecting a spin-polarized electron in a stacked direction. A level of effective demagnetizing field, which is received by the memory layer, is smaller than a saturation-magnetization level of magnetization of the memory layer.

Abstract: A memory includes: a memory device that has a memory layer storing data as a magnetization state of a magnetic body and a magnetization fixed layer whose direction of magnetization is fixed through a nonmagnetic layer interposed between the memory layer and the magnetization fixed layer and stores the data in the memory layer by changing a magnetization direction of the memory layer when a write current flowing in a stacked direction of the memory layer and the magnetization fixed layer is applied; and a voltage control unit that supplies the write current configured by independent pulse trains of two or more to the memory device by using a write voltage that is configured by independent pulse trains of two or more.

Abstract: A memory includes: a plurality of memory devices, each including a tunnel magnetic resistance effect device containing a magnetization free layer in which a direction of magnetization can be reversed, a tunnel barrier layer including an insulating material, and a magnetization fixed layer provided with respect to the magnetization free layer via the tunnel barrier layer with a fixed direction of magnetization; a random access memory area in which information is recorded using the direction of magnetization of the magnetization free layer of the memory device; and a read only memory area in which information is recorded depending on whether there is breakdown of the tunnel barrier layer of the memory device or not.

Abstract: A recording method of a nonvolatile memory including a recording circuit that electrically performs recording of information for an information memory device having a resistance change connected to a power supply for information recording, includes the steps of: recording information in a low-resistance state by the recording circuit under a condition that an output impedance of the recording circuit for the information memory device is larger than a resistance value in the low-resistance state of the information memory device; and recording information in a high-resistance state by the recording circuit under a condition that an output impedance of the recording circuit for the information memory device is smaller than a resistance value in the high-resistance state of the information memory device.

Abstract: Provided is an antiallergic agent including, as an active ingredient, a fermentation product of a propionic acid bacterium.