Patents by Inventor Hiroshi Kanoh

Hiroshi Kanoh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8049848
    Abstract: A liquid crystal display having a wide viewing angle and easily manufactured. The liquid crystal display comprises an upper substrate and a lower substrate, and a liquid crystal material disposed between the upper substrate and the lower substrate. The liquid crystal display has a conductive protrusion disposed on the surface of the upper substrate opposing to the lower substrate. The conductive protrusion is disposed over a scanning electrode line or a signal electrode line and has the same potential as that of the upper electrode. As another structure, each of pixel electrodes on the lower substrate has a smaller area than that of a common electrode on the upper substrate and is covered by the common electrode, and each of the pixel electrodes comprises an electrode portion having approximately symmetrical shape.
    Type: Grant
    Filed: September 23, 2009
    Date of Patent: November 1, 2011
    Assignee: NEC Corporation
    Inventors: Ken-ichi Takatori, Masayoshi Suzuki, Toshiya Ishii, Teruaki Suzuki, Hiroshi Kanoh, Ken Sumiyoshi, Michiaki Sakamoto, Mamoru Okamoto, Yuji Yamamoto, Hiroaki Matsuyama, Kiyomi Kawada, Seiji Suzuki, Yoshihiko Hirai
  • Patent number: 8026162
    Abstract: A layer-stacked wiring made up of a microcrystalline silicon thin film and a metal thin film is provided which is capable of suppressing an excessive silicide formation reaction between the microcrystalline silicon thin film and metal thin film, thereby preventing peeling of the thin film. In a polycrystalline silicon TFT (Thin Film Transistor) using the layer-stacked wiring, the microcrystalline silicon thin film is so configured that its crystal grains each having a length of the microcrystalline silicon thin film in a direction of a film thickness being 60% or more of a film thickness of the microcrystalline silicon thin film amount to 15% or less of total number of crystal grains or that its crystal grains each having a length of the microcrystalline silicon thin film in a direction of a film thickness being 50% or less of a film thickness of the microcrystalline silicon thin film amount to 85% or more of the total number of crystal grains making up the microcrystalline silicon thin film.
    Type: Grant
    Filed: November 9, 2010
    Date of Patent: September 27, 2011
    Assignees: NEC Corporation, NEC LCD Technologies, Ltd.
    Inventors: Jun Tanaka, Hiroshi Kanoh
  • Patent number: 7920277
    Abstract: A laser irradiation process includes: scanning a substrate with laser having a predetermined lasing frequency at different irradiation intensities to form a plurality of first irradiation areas corresponding to the irradiation intensities; illuminating the first irradiation areas to reflected light receive from the first irradiation areas; determining microcrystallization intensity based on the received reflected light; and determining irradiation intensity based on the thus determined microcrystallization intensity. The laser irradiation process uses the irradiation intensity for irradiating a polycrystalline film in a product semiconductor device.
    Type: Grant
    Filed: April 2, 2010
    Date of Patent: April 5, 2011
    Assignees: NEC Corporation, NEC LCD Technologies, Ltd.
    Inventors: Mitsuru Nakata, Hirofumi Shimamoto, Hiroshi Kanoh
  • Publication number: 20110053354
    Abstract: A layer-stacked wiring made up of a microcrystalline silicon thin film and a metal thin film is provided which is capable of suppressing an excessive silicide formation reaction between the microcrystalline silicon thin film and metal thin film, thereby preventing peeling of the thin film. In a polycrystalline silicon TFT (Thin Film Transistor) using the layer-stacked wiring, the microcrystalline silicon thin film is so configured that its crystal grains each having a length of the microcrystalline silicon thin film in a direction of a film thickness being 60% or more of a film thickness of the microcrystalline silicon thin film amount to 15% or less of total number of crystal grains or that its crystal grains each having a length of the microcrystalline silicon thin film in a direction of a film thickness being 50% or less of a film thickness of the microcrystalline silicon thin film amount to 85% or more of the total number of crystal grains making up the microcrystalline silicon thin film.
    Type: Application
    Filed: November 9, 2010
    Publication date: March 3, 2011
    Applicant: NEC CORPORATION
    Inventors: Jun TANAKA, Hiroshi KANOH
  • Patent number: 7855766
    Abstract: A device is disclosed for generating pattern data for unevenness that is randomly arranged on the surface of the reflective substrate of a reflective liquid crystal display device. The number of coordinates, a basic pitch, a movable range, and a dot diameter are entered from a data entry unit. An array generation unit regularly arranges base coordinates in two dimensions in accordance with the basic pitch. Coordinate displacement unit randomly displaces within the movable range at a portion of the basic coordinates to generate a multiplicity of displaced coordinates. Pattern generation unit arranges dot patterns with the dot diameter entered at each of the displaced coordinates generated to generate pattern data.
    Type: Grant
    Filed: April 2, 2009
    Date of Patent: December 21, 2010
    Assignee: NEC LCD Technologies, Ltd
    Inventors: Hiroshi Kanoh, Teruaki Suzuki
  • Patent number: 7851807
    Abstract: A layer-stacked wiring made up of a microcrystalline silicon thin film and a metal thin film is provided which is capable of suppressing an excessive silicide formation reaction between the microcrystalline silicon thin film and metal thin film, thereby preventing peeling of the thin film. In a polycrystalline silicon TFT (Thin Film Transistor) using the layer-stacked wiring, the microcrystalline silicon thin film is so configured that its crystal grains each having a length of the microcrystalline silicon thin film in a direction of a film thickness being 60% or more of a film thickness of the microcrystalline silicon thin film amount to 15% or less of total number of crystal grains or that its crystal grains each having a length of the microcrystalline silicon thin film in a direction of a film thickness being 50% or less of a film thickness of the microcrystalline silicon thin film amount to 85% or more of the total number of crystal grains making up the microcrystalline silicon thin film.
    Type: Grant
    Filed: June 24, 2009
    Date of Patent: December 14, 2010
    Assignee: NEC LCD Technologies, Ltd.
    Inventors: Jun Tanaka, Hiroshi Kanoh
  • Patent number: 7787079
    Abstract: A device is disclosed for generating pattern data for unevenness that is randomly arranged on the surface of the reflective substrate of a reflective liquid crystal display device. The number of coordinates, a basic pitch, a movable range, and a dot diameter are entered from a data entry unit. An array generation unit regularly arranges base coordinates in two dimensions in accordance with the basic pitch. Coordinate displacement unit randomly displaces within the movable range at a portion of the basic coordinates to generate a multiplicity of displaced coordinates. Pattern generation unit arranges dot patterns with the dot diameter entered at each of the displaced coordinates generated to generate pattern data.
    Type: Grant
    Filed: August 7, 2009
    Date of Patent: August 31, 2010
    Assignees: NEC Corporation, NEC LCD Technologies, Ltd.
    Inventors: Hiroshi Kanoh, Teruaki Suzuki
  • Publication number: 20100190276
    Abstract: A laser irradiation process includes: scanning a substrate with laser having a predetermined lasing frequency at different irradiation intensities to form a plurality of first irradiation areas corresponding to the irradiation intensities; illuminating the first irradiation areas to reflected light receive from the first irradiation areas; determining microcrystallization intensity based on the received reflected light; and determining irradiation intensity based on the thus determined microcrystallization intensity. The laser irradiation process uses the irradiation intensity for irradiating a polycrystalline film in a product semiconductor device.
    Type: Application
    Filed: April 2, 2010
    Publication date: July 29, 2010
    Applicant: NEC CORPORATION
    Inventors: Mitsuru Nakata, Hirofumi Shimamoto, Hiroshi Kanoh
  • Patent number: 7724382
    Abstract: A laser irradiation process includes: scanning a substrate with laser having a predetermined lasing frequency at different irradiation intensities to form a plurality of first irradiation areas corresponding to the irradiation intensities; illuminating the first irradiation areas to reflected light receive from the fist irradiation areas; determining microcrystallization intensity based on the received reflected light; and determining irradiation intensity based on the thus determined microcrystallization intensity. The laser irradiation process uses the irradiation intensity for irradiating a polycrystalline film in a product semiconductor device.
    Type: Grant
    Filed: April 19, 2007
    Date of Patent: May 25, 2010
    Assignees: NEC Corporation, NEC LCD Technologies, Ltd.
    Inventors: Mitsuru Nakata, Hirofumi Shimamoto, Hiroshi Kanoh
  • Publication number: 20100066964
    Abstract: A liquid crystal display having a wide viewing angle and easily manufactured. The liquid crystal display comprises an upper substrate and a lower substrate, and a liquid crystal material disposed between the upper substrate and the lower substrate. The liquid crystal display has a conductive protrusion disposed on the surface of the upper substrate opposing to the lower substrate. The conductive protrusion is disposed over a scanning electrode line or a signal electrode line and has the same potential as that of the upper electrode. As another structure, each of pixel electrodes on the lower substrate has a smaller area than that of a common electrode on the upper substrate and is covered by the common electrode, and each of the pixel electrodes comprises an electrode portion having approximately symmetrical shape.
    Type: Application
    Filed: September 23, 2009
    Publication date: March 18, 2010
    Inventors: Ken-Ichi Takatori, Masayoshi Suzuki, Toshiya Ishii, Teruaki Suzuki, Hiroshi Kanoh, Ken Sumiyoshi, Michiaki Sakamoto, Mamoru Okamoto, Yuji Yamamoto, Hiroaki Matsuyama, Kiyomi Kawada, Seiji Suzuki, Yoshihiko Hirai
  • Publication number: 20090322757
    Abstract: A device is disclosed for generating pattern data for unevenness that is randomly arranged on the surface of the reflective substrate of a reflective liquid crystal display device. The number of coordinates, a basic pitch, a movable range, and a dot diameter are entered from a data entry unit. An array generation unit regularly arranges base coordinates in two dimensions in accordance with the basic pitch. Coordinate displacement unit randomly displaces within the movable range at a portion of the basic coordinates to generate a multiplicity of displaced coordinates. Pattern generation unit arranges dot patterns with the dot diameter entered at each of the displaced coordinates generated to generate pattern data.
    Type: Application
    Filed: August 7, 2009
    Publication date: December 31, 2009
    Inventors: Hiroshi Kanoh, Teruaki Suzuki
  • Publication number: 20090315183
    Abstract: A layer-stacked wiring made up of a microcrystalline silicon thin film and a metal thin film is provided which is capable of suppressing an excessive silicide formation reaction between the microcrystalline silicon thin film and metal thin film, thereby preventing peeling of the thin film. In a polycrystalline silicon TFT (Thin Film Transistor) using the layer-stacked wiring, the microcrystalline silicon thin film is so configured that its crystal grains each having a length of the microcrystalline silicon thin film in a direction of a film thickness being 60% or more of a film thickness of the microcrystalline silicon thin film amount to 15% or less of total number of crystal grains or that its crystal grains each having a length of the microcrystalline silicon thin film in a direction of a film thickness being 50% or less of a film thickness of the microcrystalline silicon thin film amount to 85% or more of the total number of crystal grains making up the microcrystalline silicon thin film.
    Type: Application
    Filed: June 24, 2009
    Publication date: December 24, 2009
    Applicants: NEC Corporation, NEC LCD Technologies, Ltd.
    Inventors: Jun TANAKA, Hiroshi KANOH
  • Patent number: 7619255
    Abstract: A layer-stacked wiring made up of a microcrystalline silicon thin film and a metal thin film is provided which is capable of suppressing an excessive silicide formation reaction between the microcrystalline silicon thin film and metal thin film, thereby preventing peeling of the thin film. In a polycrystalline silicon TFT (Thin Film Transistor) using the layer-stacked wiring, the microcrystalline silicon thin film is so configured that its crystal grains each having a length of the microcrystalline silicon thin film in a direction of a film thickness being 60% or more of a film thickness of the microcrystalline silicon thin film amount to 15% or less of total number of crystal grains or that its crystal grains each having a length of the microcrystalline silicon thin film in a direction of a film thickness being 50% or less of a film thickness of the microcrystalline silicon thin film amount to 85% or more of the total number of crystal grains making up the microcrystalline silicon thin film.
    Type: Grant
    Filed: March 21, 2007
    Date of Patent: November 17, 2009
    Assignees: NEC Corporation, NEC LCD Technologies, Ltd.
    Inventors: Jun Tanaka, Hiroshi Kanoh
  • Patent number: 7612848
    Abstract: A liquid crystal display having a wide viewing angle and easily manufactured. The liquid crystal display comprises an upper substrate and a lower substrate, and a liquid crystal material disposed between the upper substrate and the lower substrate. The liquid crystal display has a conductive protrusion disposed on the surface of the upper substrate opposing to the lower substrate. The conductive protrusion is disposed over a scanning electrode line or a signal electrode line and has the same potential as that of the upper electrode. As another structure, each of pixel electrodes on the lower substrate has a smaller area than that of a common electrode on the upper substrate and is covered by the common electrode, and each of the pixel electrodes comprises an electrode portion having approximately symmetrical shape.
    Type: Grant
    Filed: March 28, 2007
    Date of Patent: November 3, 2009
    Assignee: NEC Corporation
    Inventors: Ken-ichi Takatori, Masayoshi Suzuki, Toshiya Ishii, Teruaki Suzuki, Hiroshi Kanoh, Ken Sumiyoshi, Michiaki Sakamoto, Mamoru Okamoto, Yuji Yamamoto, Hiroaki Matsuyama, Kiyomi Kawada, Seiji Suzuki, Yoshihiko Hirai
  • Patent number: 7612847
    Abstract: A device is disclosed for generating pattern data for unevenness that is randomly arranged on the surface of the reflective substrate of a reflective liquid crystal display device. The number of coordinates, a basic pitch, a movable range, and a dot diameter are entered from a data entry unit. An array generation unit regularly arranges base coordinates in two dimensions in accordance with the basic pitch. Coordinate displacement unit randomly displaces within the movable range at a portion of the basic coordinates to generate a multiplicity of displaced coordinates. Pattern generation unit arranges dot patterns with the dot diameter entered at each of the displaced coordinates generated to generate pattern data.
    Type: Grant
    Filed: September 5, 2002
    Date of Patent: November 3, 2009
    Assignees: NEC LCD Technologies, Ltd., NEC Corporation
    Inventors: Hiroshi Kanoh, Teruaki Suzuki
  • Publication number: 20090228539
    Abstract: A device is disclosed for generating pattern data for unevenness that is randomly arranged on the surface of the reflective substrate of a reflective liquid crystal display device. The number of coordinates, a basic pitch, a movable range, and a dot diameter are entered from a data entry unit. An array generation unit regularly arranges base coordinates in two dimensions in accordance with the basic pitch. Coordinate displacement unit randomly displaces within the movable range at a portion of the basic coordinates to generate a multiplicity of displaced coordinates. Pattern generation unit arranges dot patterns with the dot diameter entered at each of the displaced coordinates generated to generate pattern data.
    Type: Application
    Filed: April 2, 2009
    Publication date: September 10, 2009
    Inventors: Hiroshi Kanoh, Teruaki Suzuki
  • Patent number: 7579222
    Abstract: Method of manufacturing a thin film device substrate wherein no trench fabrication is required to be applied onto the substrate surface, and a material which is impervious to light can be used, and the substrate can be peeled off quickly. Firstly, a peeling-off film, a silicon oxide film and an amorphous silicon film are formed in succession on a glass substrate, and the amorphous silicon film is irradiated from above to obtain a polycrystalline silicon film. Subsequently, using the polycrystalline silicon film as an active layer, a TFT is formed, and then a plastic substrate is bonded thereon, and finally the glass substrate is peeled off with the peeling-off film, to complete transfer of the TFT. Because the peeling-off film has a gap space, its etching rate is high. Therefore, it is unnecessary to form a trench for supplying an etchant on the surface of the glass substrate.
    Type: Grant
    Filed: August 14, 2006
    Date of Patent: August 25, 2009
    Assignee: NEC Corporation
    Inventors: Mitsuru Nakata, Kazushige Takechi, Hiroshi Kanoh
  • Patent number: 7561238
    Abstract: In a liquid crystal display device comprising a first substrate 101 having a color filter, a second substrate 131 and a liquid crystal layer disposed therebetween, a color filter layer 110 is disposed on a protection film 108 of a thin film transistor formed on the first substrate 101 so as to be partitioned by a light shielding portion 111, and a common electrode 103 is disposed thereon. A pixel electrode to be connected to a source electrode 107 is disposed through a through hole formed in an overcoat layer (interlayer separation film) 112. On the first substrate below the color filter layer 110 are provided plural scan signal electrodes, plural video signal electrodes crossing the scan signal electrodes in a matrix form, plural thin film transistors formed in association with the crossing points between the electrodes.
    Type: Grant
    Filed: April 13, 2007
    Date of Patent: July 14, 2009
    Assignee: NEC LCD Technologies, Ltd.
    Inventors: Michiaki Sakamoto, Takahiko Watanabe, Hirofumi Ihara, Hironori Kikkawa, Mamoru Okamoto, Shinichi Nakata, Yuji Yamamoto, Masayoshi Suzuki, Teruaki Suzuki, Toshiya Ishii, Hiroshi Kanoh
  • Patent number: 7514303
    Abstract: A liquid crystal display device includes (a) a first substrate, (b) a second substrate spaced away from and facing the first substrate, (c) a liquid crystal layer sandwiched between the first and second substrates, (d) a transistor formed on the first substrate, (e) a wiring layer formed on the first substrate and electrically connected to the transistor, (f) a reflection electrode formed on the first substrate, an external incident light being reflected at the reflection electrode towards a viewer, and (g) a compensation layer formed directly on the wiring layer. The reflection electrode does not cover the wiring layer therewith, and the compensation layer has almost the same height as a height of the reflection electrode, the height being measured from a surface of the first substrate.
    Type: Grant
    Filed: December 11, 2006
    Date of Patent: April 7, 2009
    Assignee: NEC LCD Technologies, Ltd.
    Inventors: Yuichi Yamaguchi, Hironori Kikkawa, Hiroshi Kanoh, Teruaki Suzuki, Hidenori Ikeno
  • Patent number: 7381285
    Abstract: In a manufacturing method of a flexible device, when a protective material is adhered onto a surface of a substrate, the adhesion is performed at only a part of the substrate. Since being adhered to the part of the substrate, the protective material is easily peeled away. As a result, the time required for peeling can be decreased, and cracking of the device which may occur in peeling can be prevented.
    Type: Grant
    Filed: April 14, 2005
    Date of Patent: June 3, 2008
    Assignees: NEC Corporation, Nagase & Co., Ltd., Sanwa Frost Industry Co., Ltd.
    Inventors: Hiroshi Kanoh, Kazushige Takechi, Narumoto Uesaka, Kazuo Nikami