Abstract: A control apparatus for input screens includes a display unit, a switch portion and a control unit including a microcomputer. If one of a menu switch of the switch portion and a plurality of dummy switches included in a screen displayed by the display unit is operated, the microcomputer causes the display unit to display a new screen including a plurality of dummy switches. The microcomputer estimates a time period required for the operator to watch a screen to operate the dummy switch, depending on the displayed screen (the number of dummy switches). If the sum of estimated time periods exceeds a reference time period, the microcomputer nullifies operation of the dummy switch to prevent the screen from being switched. After the lapse of a predetermined time period, the microcomputer cancels the nullification of the operation of the dummy switch.

Abstract: Provided is a method of manufacturing a vitreous silica crucible, including: an arc fusing process for fusing the silica powder molded body by using arc flames generated from the plurality of carbon electrodes, wherein the arc fusing process is performed in a state of disposing tips of at least a pair of carbon electrodes of the plurality of carbon electrodes closer to a target surface of the silica powder molded body than other carbon electrode tips, and setting distances from each of the tips of the closer carbon electrodes to the target surface, to be equal, and the arc fusing process is performed by heating and fusing the silica powder molded body while performing fire polishing, which partially removes an inner surface of the silica powder molded body by using arc flames generated by the closer carbon electrodes.

Abstract: Provided are an apparatus and a method for manufacturing a vitreous silica crucible, which enable accurate measurement of a fume generation amount, prevention of deterioration of an inner surface property, and real-time control of a raw material melting state. Provided is an apparatus for manufacturing a vitreous silica crucible 50 by supplying silica powder into a mold 10 to form a silica powder layer 11, and heating and melting the silica powder layer 11 by arc discharge. The apparatus includes the mold 10 for defining an outer shape of a vitreous silica crucible, an arc discharge unit having a plurality of carbon electrodes 13 and a power-supply unit 40, and a fume-amount measurement unit 30 for detecting an amount of fumes 80 generated in the mold 10.

Abstract: An object of the present invention is to provide a polymer coated magnetic fine polymer by coating an inorganic fine particle with a thin polymer layer under precise control of a polymerization reaction and a method for preparing the same. Onto a surface of the inorganic fine particle the iniferter is fixed and grafted chains are formed on the inorganic fine particle by a living radical polymerization using the iniferter as an initiator which is defined by the following chemical formula: (wherein X is a hydrophilic atomic group being capable of binding to a surface of the inorganic fine particle, R1 and R2 are each independently selected from a mono-valent hydrocarbyl group which is formed by removing one hydrogen atom from hydrocarbon.

Abstract: Nano-sized inorganic particles having uniform particle sizes and precisely controlled particle diameters have already been produced by synthesis in an organic solvent, but these nano-sized inorganic particles are hindered from dispersing in a polar solvent because of the adsorption of a long-chain fatty acid on the surfaces of the particles. Further, it was difficult to form nano-sized inorganic particles dispersible in a polar solvent by replacing the long-chain fatty acid coats.

Abstract: Provided is a vitreous silica crucible for pulling silicon single crystals, which can melt a silicon raw material in a short time and improve production yield of silicon single crystals by temporal change of an opaque vitreous silica layer. The vitreous silica crucible includes an opaque vitreous silica layer(11) provided on an outer surface thereof and containing plural bubbles, and a transparent vitreous silica layer(12) provided on an inner surface and not containing bubbles substantially. The opaque vitreous silica layer(11) has a bubble diameter distribution in which the content of bubbles having a diameter of less than 40 ?m is 10% or more and less than 30%, the content of bubbles having a diameter of 40 ?m or more and less than 90 ?m is 40% or more and less than 80%, and the content of bubbles having a diameter equal to or more than 90 ?m is 10% or more and less than 30%.

Abstract: A method of manufacturing a vitreous silica crucible by a rotary mold method, which includes performing arc melting in a state in which electrodes are provided so as to be shifted from a mold central line, wherein, by this eccentric arc, the glass temperature difference during melting of a straight body portion, a curved portion and a bottom of the crucible is controlled to 300° C. or below and the thickness of a transparent layer of the straight body portion and the bottom is controlled to 70 to 120% of the thickness of a transparent layer of the curved portion.

Abstract: In order to provide a vitreous silica crucible which does not employ a crystallization accelerator but is difficult to deform during its use even under high temperature, and is easily manufactured, there is provided a vitreous silica crucible for pulling single-crystal silicon wherein the outer surface layer is formed of a bubble-containing vitreous silica layer, the inner surface layer is formed of a vitreous silica layer whose bubbles are invisible to the naked eye, a surface of the outer surface layer includes an unmelted or half-melted silica layer (abbreviated as a half-melted silica layer), and the center line average roughness (Ra) of the half-melted silica layer is 50 to 200 ?m, also preferably, and the thickness of the half-melted silica layer is 0.5 to 2.0 mm.

Abstract: A vitreous silica crucible manufacturing apparatus includes a plurality of carbon electrodes configured to heat and melt raw material powder by arc discharge, and a value of a ratio R2/R1 of a diameter R2 of a front end of each of the carbon electrodes to a diameter R1 of a base end is set in a range of 0.6 to 0.8. Each carbon electrode has a diameter reduction portion formed at a front end position and reduced in diameter from a diameter R3 of a base end side to the diameter R2 of the front end. When a length of the diameter reduction portion is L1, the diameter of the front end is R2, the diameter of the base end is R1, an angle between the axis lines of the carbon electrodes is ?1, and X=(R1?R2)/2, a value of L1?(X/tan(?1/2)) is set in a range of 50 to 150 mm.

Abstract: In a silica glass crucible used for pulling a silicon crystal, a circumferential maximum tolerance of each of bubble content, wall thickness and transmission as measured over a full circumference of the crucible at a same height position is not more than 6%.

Abstract: A silica glass crucible used for pulling single-crystal silicon, which includes a cylindrical straight body part, a bottom part and a curved part located between the straight body part and the bottom part, wherein the curvature radius of the inner wall surface of the curved part is 100 to 240 mm. Variation of the wall thickness W of the curved part is preferably 0.1 to 1.4 mm/cm.

Abstract: A silica glass crucible used for pulling single-crystal silicon, which includes a cylindrical straight body part, a bottom part and a curved part located between the straight body part and the bottom part, wherein the curvature radius of the inner wall surface of the curved part is 100 to 240 mm. Variation of the wall thickness W of the curved part is preferably 0.1 to 1.4 mm/cm.

Abstract: A method of manufacturing a fused silica crucible by heating and melting a vitreous silica powder compact shaped into a mold using arc discharge of electrodes arranged around a rotation shaft of the mold, includes the steps of: arranging the electrodes in a ring shape, and setting a ratio W/R of a horizontal distance W between the electrode front end and the surface of the vitreous silica powder compact to a vitreous silica powder compact opening radius R, for at least a predetermined time during arc heating, to be in the range of 0.002 to 0.98.

Abstract: An arc discharge method of the present invention includes the steps of: heating and melting a non-conductive object by arc discharge using a plurality of carbon electrodes in an output range of 300 to 12,000 kVA; and setting a ratio of the distance between a contact position at which the carbon electrodes come in contact with each other and a front end to the diameter of the carbon electrode during the start of the arc discharge to be in the range of 0.001 to 0.9.

Abstract: A driving device, small in size and light in weight, is to stabilize the position of a surface-deforming element while reducing the effect of gravity thus enabling stable transfer and positioning. The driving device is structured to hold a movable member integrated with a piezoelectric vibrator and a lens by a shaft provided at a tip of a spring extended from an inner surface to center of a passageway. The shaft extends through an opening formed in a protrusion of the movable member. By a tensile force of the spring, the movable member at its outer periphery is pulled radially and held. When applying a voltage with a waveform changing sharply to the piezoelectric vibrator, the movable member flexes maximally upward or downward to have a reduced diameter and an increasing acceleration thereby making a movement. Then, when a frictional force increases, the protrusion is held at a point where the movable member moves.

Abstract: A silica glass crucible causing fewer pinholes in silicon single crystals is provided by a method of preventing pinholes by performing the pulling up of a silicon single crystal while restraining the dissolution rate of the crucible inner surface to 20 ?m/hr or less, using a silica glass crucible for the pulling up of silicon single crystals, wherein the area of crystalline silica formed by crystallization of amorphous silica is restricted to 10% or less of the crucible inner surface area, or the density of pits formed from open bubbles on the crucible inner surface is restricted to 0.01 to 0.2 counts/mm2.

Abstract: A method of producing a quartz glass crucible by arc melting a quartz powder molded product loaded on the inner side of a mold while performing vacuum suction, includes initiating the melting of quartz powder from the rim edge of a quartz powder molded product, subsequently lowering the arc electrode or raising the mold to heat and melt the sections on the downside of the rim edge. The method is preferably carried out such that the inner surface of the crucible is sealed within a time corresponding to 10% of the total arc time starting from the initiation of arc melting, and the seal thickness is 3 mm or less. The quartz glass crucible thus produced is useful for the pulling up of silicon single crystals and has a uniform glass layer with fewer internal bubbles.

Abstract: A method is provided for producing a vitreous silica crucible having excellent shape formability and fewer internal bubbles without excessively heating the curved portion and the bottom part. The method comprises arc melting a quartz powder molded product loaded in a rotating mold while performing vacuum suction, wherein the electrode is moved sideways with respect to the mold center line upon the initiation of arc melting or during the arc melting, and the arc melting is performed at an eccentric position, and preferably the time for total heating is limited to 60% or less of the total arc melting time. A vitreous silica crucible produced by this method is also provided.

Abstract: A silica glass crucible for pulling up a silicon crystal related to the present invention includes a roundness Sx of an interior surface of the silica glass crucible and a roundness Sy of an exterior surface of the silica glass crucible in at least a wall part of the silica glass crucible both being 0.4 or less (Sx/M?0.4, Sy/M?0.4) to a maximum thickness M in the same measurement height as the roundness.

Abstract: A silica glass crucible having a sidewall portion and a bottom portion is provided with a first synthetic silica glass layer constituting an inner layer at least in the sidewall portion, a second synthetic silica glass layer constituting an inner layer at least in a region including a center of the bottom portion, and a natural silica glass layer constituting an outer layer in the sidewall portion and the bottom portion. A melting rate of the second synthetic silica glass layer with respect to a silicon melt is higher than that of the first synthetic silica glass layer. An aluminum concentration of the second synthetic silica glass layer is higher than that of the first synthetic silica glass layer.