Abstract: A positive resist composition includes (A) an alkali-soluble polysiloxane resin, (B) an acid generator composed of a compound which generates an acid upon irradiation of active light or radiant ray, and (C) a compound in which at least one hydrogen atom of phenolic hydroxyl group or carboxyl group is substituted with an acid-decomposable group. This positive resist composition is useful for processes using F2 excimer laser (157 nm), extreme-ultraviolet rays (EUV, vacuum ultraviolet rays; 13 nm) and other light sources having wavelengths equal to or shorter than that of KrF excimer laser, and has high definition and can form resist patterns with good sectional shapes. A base material carrying a layer of the positive resist composition is also useful.

Abstract: Disclosed is a novel aqueous developer solution used in the development treatment of an actinic ray-sensitive resist for the manufacture of, for example, semiconductor devices, which is capable of giving a patterned resist layer free from the troubles of film residue or scum deposition in any finest patterning. The developer solution contains, in addition to a nitrogen-containing organic basic compound, e.g., tetramethyl ammonium hydroxide, dissolved in an aqueous medium as the solvent, an anionic surface active agent which is a diphenyl ether compound having at least one ammonium sulfonate group, such as an ammonium alkyl diphenylether sulfonate, in a concentration of 0.05 to 5% by weight.

Abstract: The present invention provides a photopolymerizable composition for a color filter containing an addition-polymerizable compound having at least one ethylenically unsaturated double bond, a photopolymerization initiator and the oxide of at least one metal selected from the group consisting of Cu, Fe, Mn, Cr, Co, Ni and Al and being substantially free from any halogen atom; and a process for producing a color filter. The photopolymerizable compositions for a color filter makes it possible to form a color filter having good heat resistance and high electrical insulation resistance and have high storage stability.

Abstract: The present invention provides a composition for forming an antireflective coating film which is not liable to intermixing between the resist composition layer and the antireflective coating layer and a method for forming a resist pattern having an excellent dimensional accuracy and section shape. The composition consists of (A) a compound which produces an acid upon irradiation with actinic rays, (B) a compound which undergoes crosslinking reaction in the presence of an acid, (C) a dye and (D) an organic solvent.

Abstract: The present invention provides a photopolymerizable composition for a color filter containing an addition-polymerizable compound having at least one ethylenically unsaturated double bond, a photopolymerization initiator and the oxide of at least one metal selected from the group consisting of Cu, Fe, Mn, Cr, Co, Ni and Al and being substantially free from any halogen atom; and a process for producing a color filter. The photopolymerizable compositions for a color filter makes it possible to form a color filter having good heat resistance and high electrical insulation resistance and have high storage stability.

Abstract: Disclosed herein is a post-ashing treating liquid composition comprising a salt of hydrofluoric acid with a base free from metal ions, a water-soluble organic solvent, water, and an acetylene alcohol/alkylene oxide adduct. Disclosed also herein is a process for treatment with said treating liquid composition. For removal of resist residues such as modified photoresist films and metal depositions, the treating liquid composition and the treating process can be advantageously applied to the substrates having been dry-etched, followed by ashing under severe conditions, without corrosion on metal layers and damage to an organic SOG layer formed thereon.

Abstract: Provided by the invention is a chemical-amplification positive-working photoresist composition used in the fine photolithographic patterning in the manufacturing process of semiconductor devices, which is suitable for the patterning light exposure with ArF excimer laser beams of very short wavelength by virtue of absence of aromatic structure in the ingredients of the composition. The composition comprises, as the film-forming resinous ingredient, an acrylic resin having unique monomeric units represented by the general formula &Brketopenst;CH2—CR1(—CO—O—CR2R3R4)&Brketclosest;, in which R1 is a hydrogen atom or a methyl group, R2 and R3 are each, independently from the other, an alkyl group having 1 to 4 carbon atoms and R4 is an alkoxycarbonyl group or a group derived from a molecule of a lactone compound or ketone compound by removing a hydrogen atom bonded to the carbon atom.

Abstract: Disclosed is a novel negative-working chemical-amplification photoresist composition comprising, as the essential ingredients, (A) an alkali-soluble resin, (B) a radiation-sensitive acid-generating agent and (C) a cross-linking agent. Characteristically, the component (B) is a combination of a halogenoacid-generating compound and a bis(alkylsulfonyl) diazomethane compound in a specified proportion. By virtue of this unique formulation of the composition, the photoresist composition can give a patterned resist layer having excellently orthogonal cross sectional profile in a high photosensitivity.

Abstract: Disclosed herein is a liquid coating composition for use in forming an antireflective film comprising a mixture of a cyclic perfluoroalkyl polyether and a chain perfluoroalkyl polyether in a ratio of from 3:10 to 10:1 by weight, and a fluorocarbon organic solvent. Disclosed also herein is a photoresist material consisting of a photoresist layer and said antireflective film formed thereon using said liquid coating composition. The antireflective film remarkably reduces the standing-wave effect especially in the case where the photoresist layer of chemically amplified type is used. The antireflective film also has good film quality and film removability.

Abstract: Provided by the invention is a chemical-amplification positive-working photoresist composition used in the fine photolithographic patterning in the manufacturing process of semiconductor devices, which is suitable for the patterning light exposure with ArF excimer laser beams of very short wavelength by virtue of absence of aromatic structure in the ingredients of the composition. The composition comprises, as the film-forming resinous ingredient, an acrylic resin having unique monomeric units represented by the general formula.brket open-st.CH.sub.2 --CR.sup.1 (--CO--O--CR.sup.2 R.sup.3 R.sup.4).brket close-st.,in which R.sup.1 is a hydrogen atom or a methyl group, R.sup.2 and R.sup.3 are each, independently from the other, an alkyl group having 1 to 4 carbon atoms and R.sup.4 is an alkoxycarbonyl group or a group derived from a molecule of a lactone compound or ketone compound by removing a hydrogen atom bonded to the carbon atom.

Abstract: Proposed is a novel chemical-sensitization positive-working photoresist composition used in the photolithographic patterning process for the manufacture of fine electronic devices, which is capable of giving, with high photosensitivity to ArF excimer laser beams, a patterned resist layer having an excellently orthogonal cross sectional profile and high resistance against dry etching and exhibiting good adhesion to the substrate surface. While the composition comprises (A) a film-forming resinous ingredient which undergoes an increase of alkali solubility by interacting with an acid and (B) a radiation-sensitive acid-generating agent, the most characteristic feature of the invention consists in the use of a specific acrylic resin as the component (A), which comprises the monomeric units of a (meth)acrylic acid ester of hydroxy bicyclo[3.1.

Abstract: Disclosed are novel high-sensitivity positive- and negative-working chemical-sensitization photoresist compositions capable of giving a highly heat-resistant patterned resist layer of high resolution having excellently orthogonal cross sectional profile without being influenced by standing waves. The composition contains, as an acid generating agent by irradiation with actinic rays, a specific cyano-substituted oximesulfonate compound such as .alpha.-(methylsulfonyloxyimino)-4-methoxybenzyl cyanide. The advantages obtained by the use of this specific acid-generating agent is remarkable when the film-forming resinous ingredient has such a molecular weight distribution that the ratio of the weight-average molecular weight to the number-average molecular weight does not exceed 3.5.

Abstract: Disclosed are novel high-sensitivity positive- and negative-working chemical-sensitization photoresist compositions capable of giving a highly heat-resistant patterned resist layer of high resolution having excellently orthogonal cross sectional profile without being influenced by standing waves. The composition contains, as an acid generating agent by irradiation with actinic rays, a specific cyano-substituted oximesulfonate compound such as .alpha.-(methylsulfonyloxyimino)-4-methoxybenzyl cyanide. The advantages obtained by the use of this specific acid-generating agent is remarkable when the film-forming resinous ingredient has such a molecular weight distribution that the ratio of the weight-average molecular weight to the number-average molecular weight does not exceed 3.5.

Abstract: A photosensitive resin composition comprising a polymeric binder, an ethylenically unsaturated monomer and a photopolymerization initiator is disclosed. Also, a PS plate using the same is disclosed. The photopolymerization initiator comprises at least one compound selected from specific triazine compounds having a bromine atom on the substituted phenyl nucleus thereof and specific trihalomethyl-containing triazine compounds. The composition has high photosensitivity sufficient for exposure with an argon laser light and satisfactory developability. Additionally disclosed is a photosensitive resin composition comprising a polymeric binder, a monomer having an ethylenically unsaturated double bond and photopolymerization initiators including an acridine compound and a specific triazine compound. This second photosensitive resin composition has high sensitivity, high resolution and a wide development margin.

Abstract: Disclosed is a novel positive-working or negative-working chemical-sensitization photoresist composition useful in the photolithographic patterning works for the manufacture of electronic devices. The photoresist composition is characterized by a unique acid-generating agent capable of releasing an acid by the pattern-wise exposure of the resist layer to actinic rays so as to increase or decrease the solubility of the resist layer in an aqueous alkaline developer solution. The acid-generating agent proposed is a novel cyano group-containing oxime sulfonate di- or triester compound represented by the general formulaA[C(CN).dbd.N--O--SO.sub.2 --R].sub.n,in which each R is, independently from the others, an unsubstituted or substituted monovalent hydrocarbon group such as alkyl groups, A is a divalent or tervalent organic group or, preferably, phenylene group and the subscript n is 2, when A is a divalent group, or 3, when A is a tervalent group or, preferably 2.

Abstract: Disclosed is a novel positive-working or negative-working chemical-sensitization photoresist composition useful in the photolithographic patterning works for the manufacture of electronic devices. The photoresist composition is characterized by a unique acid-generating agent capable of releasing an acid by the pattern-wise exposure of the resist layer to actinic rays so as to increase or decrease the solubility of the resist layer in an aqueous alkaline developer solution. The acid-generating agent proposed is a novel cyano group-containing oxime sulfonate di- or triester compound represented by the general formulaA[C(CN).dbd.N--O--SO.sub.2 --R].sub.n,in which each R is, independently from the others, an unsubstituted or substituted monovalent hydrocarbon group such as alkyl groups, A is a divalent or tervalent organic group or, preferably, phenylene group and the subscript n is 2, when A is a divalent group, or 3, when A is a tervalent group or, preferably 2.

Abstract: Proposed is novel compounds for use in a chemical-sensitization positive-working photoresist composition used in the photolithographic patterning process for the manufacture of fine electronic devices, which is capable of giving, with high photosensitivity to ArF excimer laser beams, a patterned resist layer having an excellently orthogonal cross sectional profile and high resistance against dry etching and exhibiting good adhesion to the substrate surface. While the composition comprises (A) a film-forming resinous ingredient which causes an increase of alkali solubility by interacting with an acid and (B) a radiation-sensitive acid-generating agent, the most characteristic feature of the invention consists in the use of a specific acrylic resin as the component (A), which comprises the monomeric units of a (meth)acrylic acid ester of hydroxy bicyclo?3.1.

Abstract: Proposed is a novel negative-working chemical-sensitization photoresist composition used in the photolithographic patterning work for the manufacture of semiconductor devices and the like and capable of giving a patterned resist layer with high sensitivity and pattern resolution as well as excellent heat resistance and excellently orthogonal cross sectional profile of the patterned resist layer. The composition comprises, as a uniform solution:(A) 100 parts by weight of an alkali-soluble resin which is a polyhydroxystyrene-based resin having a weight-average molecular weight of at least 2000;(B) from 3 to 70 parts by weight of an acid-crosslinkable compound which is an amino resin having hydroxyalkyl and/or alkoxyalkyl groups;(C) from 0.5 to 30 parts by weight of a radiation-sensitive acid-generating compound selected from several types of specific oximesulfonate compounds; and(D) from 0.

Abstract: An image formation method which comprises: (a) selectively exposing a photosensitive layer with a visible laser beam, (b) heating the exposed photosensitive layer at a temperature of from 36 to 48.degree. C. for 10 seconds to 3 minutes, and (c) developing the photosensitive layer.

Abstract: A photosensitive resin composition for forming light shielding films comprising a mixture of; 10 to 60 parts by weight of a high molecular weight polymeric binder; 15 to 50 parts by weight of a photopolymerizable monomer; 0.1 to 30 parts by weight of a photopolymerization initiator; and at least 20 parts by weight of a light shielding pigment comprising carbon black coated with resin for forming black matrices such as CRT displays and liquid crystal panels; a black matrix made from by said photosensitive resin composition; and a method for producing said black matrix comprising the steps of coating said photosensitive resin composition comprising a high molecular weight polymeric binder, a photopolymerizable monomer, a photopolymerization initiator, and a light shielding pigment consisting of carbon black coated with resin on a substrate, selectively radiating an activated beam, and developing the coating using an alkaline aqueous solution to form a pattern.