Abstract: There is provided a solid-state imaging device including: a first substrate including a first semiconductor substrate and a first wiring layer, the first semiconductor substrate having a pixel unit with pixels; a second substrate including a second semiconductor substrate and a second wiring layer, the second semiconductor substrate having a circuit with a predetermined function; and a third substrate including a third semiconductor substrate and a third wiring layer, the third semiconductor substrate having a circuit with a predetermined function, the first, second, and third substrates being stacked in this order, the first substrate and the second substrate being bonded together with the first wiring layer and the second wiring layer opposed to each other, a first coupling structure on bonding surfaces of the first substrate and the second substrate, and including an electrode junction structure with electrodes formed on the respective bonding surfaces in direct contact with each other.

Abstract: A solid-state imaging device including a first substrate on which a pixel unit is formed, and a first semiconductor substrate and a first multi-layered wiring layer are stacked, a second substrate on which a circuit having a predetermined function is formed, and a second semiconductor substrate and a second multi-layered wiring layer are stacked, and a third substrate on which a circuit having a predetermined function is formed, and a third semiconductor substrate and a third multi-layered wiring layer are stacked. The first substrate, the second substrate, and the third substrate are stacked in this order. A first coupling structure for electrically coupling a circuit of the first substrate and the circuit of the second substrate to each other does not include a coupling structure formed from the first substrate as a base over bonding surfaces of the first substrate and the second substrate.

Abstract: There is provided a system capable of distributing code-compressed data based on audio data on a music composition via the Internet to a mobile telephone so that a user can cut out a desired range from the code-compressed data and register it as a call sound. The system has a data structure of a content frame (3GPP, 3GPP2) containing code-compressed data (AAC) of audio data. The content frame has at least one cut-out position information in the AAC data in its extended function section. A mobile telephone has a content storage unit, a cut-out selection unit to be used by the user to select at least one cut-out position information contained in the extended function section of the content frame, and a data cut-out section for cutting out data from the code-compressed data. The code-compressed data which has been cut out is decompressed when called and the sound is outputted from a loudspeaker.

Abstract: There is provided a system capable of distributing code-compressed data based on audio data on a music composition via the Internet to a mobile telephone so that a user can cut out a desired range from the code-compressed data and register it as a call sound. The system has a data structure of a content frame (3GPP, 3GPP2) containing code-compressed data (AAC) of audio data. The content frame has at least one cut-out position information in the AAC data in its extended function section. A mobile telephone has a content storage unit, a cut-out selection unit to be used by the user to select at least one cut-out position information contained in the extended function section of the content frame, and a data cut-out section for cutting out data from the code-compressed data. The code-compressed data which has been cut out is decompressed when called and the sound is outputted from a loudspeaker.

Abstract: The surface of an amorphous silicon film formed on a glass substrate is cleaned by hydrofluoric acid in a spin clean unit. The glass substrate is conveyed to a waiting unit where the glass substrate is made to wait for about 15 minutes. Active fluoride adhered on the amorphous silicon film is sublimated. The glass substrate in which the active fluoride is sublimated is conveyed into a laser annealing device where the amorphous silicon film is excimer laser annealed to reform the amorphous silicon film into a polysilicon film. The residuals of the charges in the polysilicon film generated by excimer laser annealing the surface of the amorphous silicon film with the active fluoride adhered to the surface of the amorphous silicon film can be prevented. A thin film transistor having desired TFT characteristics can be manufactured.

Abstract: A method of laser irradiation including reflecting a linear laser beam from a mirror to bend an optical path of the laser beam, adjusting a width of the laser beam in the short axis direction of the laser beam whose optical path is bent by the mirror, by a short axis homogenizer, and irradiating an amorphous silicon semiconductor on a translucent substrate with the laser beam whose width in the short axis direction is adjusted by the short axis homogenizer, wherein the intensity of the laser beam is adjusted by adjusting the angle of the mirror.

Abstract: A laser annealing method includes preparing a plurality of polycrystalline silicon film samples having different grains sizes, obtaining the energy density condition corresponding to the polycrystalline silicon film sample having the highest degree of scattering, adding a certain value of the energy density to the energy density condition obtained in the preceding step so as to determine a set value of the energy density, and irradiating the amorphous silicon thin film with a laser beam at the set value of the energy density determined in the preceding step so as to carry out the laser annealing.

Abstract: A laser annealing method includes preparing a plurality of polycrystalline silicon film samples having different grains sizes, obtaining the energy density condition corresponding to the polycrystalline silicon film sample having the highest degree of scattering, adding a certain value of the energy density to the energy density condition obtained in the preceding step so as to determine a set value of the energy density, and irradiating the amorphous silicon thin film with a laser beam at the set value of the energy density determined in the preceding step so as to carry out the laser annealing.

Abstract: A thin film transistor to be adapted to each pixel switch in a liquid crystal display has a polycrystalline silicon layer which is acquired by crystallizing amorphous silicon deposited on a glass substrate by laser annealing. A characteristic curve indicating the intensity distribution of a laser beam in this laser annealing has a peak shifted on the upstream side in the direction the glass substrate is moved. In the laser annealing of amorphous silicon, the laser beam is irradiated on the amorphous silicon in such a way that a higher-intensity portion of the laser beam hits the amorphous silicon first. This can make the fluence margin of a laser beam in laser annealing wide enough to achieve a high field-effect mobility and a high yield.

Abstract: A method of manufacturing a poly-crystalline silicon (p-Si) film includes the steps in which an excimer laser anneals an amorphous silicon (a-Si) film deposited on a glass substrate and makes the same into the poly-crystalline silicon while the glass substrate is moved in a moving direction relative to the laser. Prior to carrying out the annealing step, a couple of the laser pulses are applied to different places of the a-Si film, provided that each of the laser pulses has different energy fluence and one pulse at a time is applied to the a-Si film. The pulse applied area is divided into two sections by a reference line perpendicular to the moving direction of the glass substrate. Average grain sizes of the p-Si film in the two sections are compared to each other to determine the moving direction.

Abstract: There is disclosed a method for manufacturing a polycrystal semiconductor film comprising the steps of applying a high energy beam to a surface of a semiconductor film comprising an amorphous or a polycrystal semiconductor provided on a surface of a substrate to melt only the semiconductor film, and solidifying the film via a solid and liquid coexisting state to form a semiconductor film comprising a polycrystal semiconductor having a large grain diameter, by heating a liquid part using a difference in an electric resistance in the liquid and solid coexisting state to heat only the liquid part, and by extending the solidification time until the completion of solidifying of the molten liquid crystal film. Furthermore, as the base film of the semiconductor film, a material having a melting point of 1600.degree. C. and a thermal conductivity of 0.01 cal/cm.s..degree. C.

Abstract: A dibenzocyclooctadiene type lignan can be efficiently prepared by extracting a plant containing a dibenzocyclooctadiene type lignan with a low polar solvent, subjecting the resulting extract to partition extraction with a water-insoluble low polar solvent and a water-soluble high polar solvent, at least one time, and recovering the dibenzocyclooctadiene type lignan from the layer of the water-soluble high polar solvent.

Abstract: Iridoid derivatives synthesized using genipin, which is an aglycon of geniposide, as the starting material are useful as an anti-hyperlipemia agent and as a cholagogue.

Abstract: Iridoid derivatives synthesized using genipin, which is an aglycon of geniposide, as the starting material are useful as an anti-hyperlipemia agent and as a cholagogue.

Abstract: Polycyclic compounds (I) can be prepared in accordance with the following reaction formula: ##STR1## wherein R.sub.1 -R.sub.8 each represents a hydrogen atom, a hydroxyl group, an alkoxyl group or a substituted or unsubstituted benzyloxy group or neighboring two groups of R.sub.1 -R.sub.

Abstract: AlN is added to a SiC light emitting layer of an optical semiconductor device in a molecular state, and an association of AlN is formed between crystal lattice points, which are close to each other in said light emitting layer. Said association is largely different from said SiC in degree of electron negativity so that said association traps a carrier in said light emitting layer, and forms an exciton.

Abstract: Iridoid derivatives synthesized using genipin, which is an aglycon of geniposide, as the starting material are useful as an anti-hyperlipemia agent and as a cholagogue.

Abstract: The present invention relates to a novel biphenyl derivative having a liver ailment-moderating action and effective as a remedy for acute hepatitis and chronic hepatitis, a process for the preparation of this biphenyl derivative and a liver ailment-moderating agent comprising this diphenyl derivative as an effective ingredient. This diphenyl derivative is represented by the following formula: ##STR1## wherein R.sub.0 and R.sub.1 independently stand for a lower alkyl group or R.sub.0 and R.sub.1 together represent a group O.dbd.C<, R.sub.2 stands for an alkyl group having 1 to 3 carbon atoms, and R.sub.3 and R.sub.4 independently stand for a hydrogen atom or a lower alkyl group.

Abstract: A scroll fluid apparatus has a revolving scroll and an auxiliary crank as a rotation prevention mechanism. The revolving scroll has a two-layer structure including an auxiliary member having an annular plate portion, and an end plate member having an end plate, the two members being superposed axially. A positioning mechanism is provided between the auxiliary member and the end plate member to position and unite them in a circumferential direction. When the end plate member expands radially due to a rise in temperature, the end plate is displaced radially while being in sliding contact with the annular plate portion. The end plate is fastened to the annular plate portion through a bolt portion at the center thereof, where the amount of radial displacement due to the thermal expansion is the smallest. Accordingly the annular plate portion is not displaced radially and thus, no radial load acts on the auxiliary crank.

Abstract: The present invention relates to an anti-ulcer agent comprising a compound represented by the following general formula I as the effective ingredient, and a novel chalcone derivative included in the compound represented by this general formula I: ##STR1## wherein X and Y independently stand for a hydrogen atom or together form a single bond, R.sub.1 stands for a hydroxyl group, an acetoxy group, a carboxymethoxy group or a methoxycarbonylmethoxy group, R.sub.2 stands for a hydrogen atom, an isoprenyl group, isopentyl group or a propyl group, R.sub.3 stands for a hydroxyl group or a methoxy group, R.sub.4 stands for a hydrogen atom, a hydroxyl group or a methoxy group, R.sub.5 stands for a hydrogen atom, a hydroxyl group, a methoxy group or an isopentyl group, R.sub.6 stands for a hydroxyl group, a methoxy group or a carboxymethoxy group, and R.sub.7 stands for a hydrogen atom or a methoxy group.