Abstract: In a wafer processing method of radiating a pulsed-laser beam to a wafer from a back surface of a silicon substrate to form via holes reaching respective bonding pads, a plurality of devices being formed on a surface of the silicon substrate, the bonding pads being formed on each of the devices, a thickness of said bonding pad is set as being equal to or larger than 5 ?m, a wavelength of the pulsed-laser beam is set to 355 nm, and an energy density per one pulse of the pulsed-laser beam is set in a range of 20 to 35 J/cm2.

Abstract: A laser beam processing machine comprising a laser beam application means for applying a laser beam to a workpiece held on a chuck table and a processing-feed means, wherein the laser beam application means comprises a first pulse laser beam application means and a second pulse laser beam application means; the first pulse laser beam application means comprises an acousto-optic deflection means for deflecting the optical axis of a pulse laser beam oscillated by a first pulse laser beam oscillation means in the processing-feed direction (X direction), and a first condenser lens for converging a pulse laser beam passing through the acousto-optic deflection means; the second pulse laser beam application means comprises a second condenser lens for converging a pulse laser beam oscillated by the second pulse laser beam oscillation means; and an NA value of the first condenser lens is set smaller than the NA value of the second condenser lens.

Abstract: A processing apparatus contains a holding member for holding a workpiece, and a laser beam shining member for shining a laser beam at the workpiece held on the holding member. The holding member has a holding plate and the workpiece is placed on the holding plate. The holding plate is composed of a plate-shaped body formed from polychlorotrifluoroethylene, and a film formed from polytetrafluoroethylene is superposed on an upper surface of the plate-shaped body.

Abstract: Disclosed herein is a beam processing machine comprising laser beam application device for applying a laser beam to a workpiece, which device includes a laser beam oscillator and a condenser for converging a laser beam to apply the converged laser beam. The condenser includes a first prism for splitting the laser beam oscillated from the laser beam oscillator into a first laser beam and a second laser beam both having a semicircular section and interchanging the first laser beam with the second laser beam, a second prism for correcting the optical paths of the first laser beam and the second laser beam split by the first prism to become parallel to each other, and an image forming lens for focusing the first laser beam and the second laser beam whose optical paths have been corrected by the second prism to become parallel to each other into spots having linear portions on the outer side and arcuate portions on the inner side.

Abstract: A method of forming a via hole reaching a bonding pad in a wafer, which have a plurality of devices on the front surface of a substrate and bonding pads on each of the devices, by applying a pulse laser beam from the rear surface of the substrate, comprising the steps of: affixing a protective member to the front surface of the substrate; grinding the rear surface of the substrate having the protective member affixed to the front surface to reduce the thickness of the wafer to a predetermined value; forming via holes in the substrate by applying a pulse laser beam from the rear surface of the substrate of the wafer having the predetermined thickness; and etching the wafer having the via holes in the substrate from the rear surface of the substrate.

Abstract: In a via-hole formation method of forming a via-hole reaching a bonding pad, in a substrate of a wafer in which a plurality of devices are formed on a surface of the substrate and the bonding pad is formed on each of the devices, a pulse laser beam whose energy distribution is shaped into a top-hat shape is emitted to form a via-hole reaching a via-hole.

Abstract: A method of forming a via hole reaching a bonding pad in a wafer having a plurality of devices on the front surface of a substrate and bonding pads on each of the devices, by applying a laser beam from the rear surface side of the substrate, comprising the steps of forming an annular groove by applying a laser beam to an annular area surrounding a via hole forming area on the rear surface of the substrate; and forming a via hole reaching a bonding pad by applying a laser beam to the via hole forming area surrounded by the annular groove from the rear surface side of the substrate.

Abstract: A method of carrying out laser processing along processing lines having linear portions and curved portions formed on a workpiece by using a laser beam processing machine comprising a laser beam application means for applying a laser beam to the workpiece held on a chuck table which comprises a condenser for converging a laser beam, having a focal spot changing means for changing the shape of a focal spot between an elliptic spot and a circular spot, comprising the steps of: moving a processing line formed on the workpiece to the application position of a laser beam, activating the focal spot changing means to make an elliptic focal spot and positioning the long axis of the elliptic spot along a linear portion of the processing line when the linear portion of the processing line is located at the application position of the laser beam and activating the focal spot changing means to make a circular focal spot when a curved portion of the processing line is located at the application position of the laser be

Abstract: A via hole depth detector for detecting the depth of a via hole formed in a workpiece held on a chuck table, comprising: a first surface position detection means which comprises a first detection laser beam oscillation means for oscillating a first detection laser beam having a predetermined wavelength and detects the height position of an illuminated portion of the workpiece based on the reflected light of the first detection laser beam; a second surface position detection means which comprises a second detection laser beam oscillation means for oscillating a second detection laser beam having a wavelength different from the wavelength of the first detection laser beam and detects the height position of an illuminated portion of the workpiece based on the reflected light of the second detection laser beam; and a control means for obtaining the depth of the via hole formed in the workpiece based on a detection value obtained by the first surface position detection means and a detection value obtained by the s

Abstract: A via hole machining method for forming via holes, reaching bonding pads, in a wafer having a plurality of devices which are formed on a face side of a substrate and are provided with the bonding pads, by irradiation with a pulsed laser beam from a back side of the substrate, wherein the energy density per pulse of the pulsed laser beam is set at such a value that ablation of the substrate will occur but ablation of the bonding pad will not occur, and the time interval of pulses of the pulsed laser beam is set at a value of not less than 150 microseconds.

Abstract: A method of dividing a wafer having devices in areas sectioned by lattice pattern-like streets on the front surface and a metal layer formed on the rear surface along the streets, comprising the steps of cutting the wafer with a cutting blade from the front surface side along the streets to form a cut groove, leaving behind a remaining portion having a predetermined thickness from the rear surface; and applying a laser beam along the cut groove formed by the above cut groove forming step to cut the remaining portion and the metal layer.

Abstract: A method of forming a via hole reaching a bonding pad in a wafer having an insulating film constituting a plurality of devices on the front surface of a substrate and bonding pads on each of the devices by applying a pulse laser beam to the rear surface of the substrate, the method comprising the steps of: forming a non-through hole reaching the insulating film formed on the substrate by applying a pulse laser beam to the rear surface of the substrate; forming an insulating film on the inner wall of the hole which is formed in the substrate by the first step; and forming a via hole reaching a bonding pad by applying a pulse laser beam to the hole having the insulating film which is formed on the inner wall by the insulating film forming step.

Abstract: An alignment method of a laser beam processing machine comprising a chuck table, a laser beam application means having a condenser for applying a laser beam to the workpiece held on the chuck table, an image pick-up means for picking up an image of the workpiece held on the chuck table and a control means having a memory for storing the specifications of the workpiece, the method comprising the steps of storing the design coordinates of a processing position set based on the mark indicating the crystal orientation of a wafer and alignment marks; picking up an image of the periphery of the wafer with the image pick-up means and locating the mark indicating the crystal orientation of the wafer at a predetermined position; positioning the design coordinate position of each of the alignment marks set based on the mark indicating the crystal orientation of the wafer right below the condenser and applying a laser beam from the condenser so as to remove the insulating film in the alignment mark areas; and picking up

Abstract: A wafer laser processing method for forming grooves along streets by applying a pulse laser beam along the streets for sectioning a plurality of devices of a wafer having the plurality of devices which are composed of a laminate consisting of an insulating film and a functional film, on the front surface of a substrate, wherein the pulse laser beam is set to have a repetition frequency of 150 kHz to 100 MHz and an energy per unit length of 5 to 25 J/m.

Abstract: A laser beam processing machine comprising a chuck table, a laser beam application means for applying a laser beam to a workpiece held on the chuck table, and a processing-feed means for moving the chuck table and the laser beam application means relative to each other in a processing-feed direction, wherein the laser beam application means comprises a first laser beam oscillation means for oscillating a first pulse laser beam having a wavelength ranging from a visible range to a near infrared range, a second laser beam oscillation means for oscillating a second pulse laser beam having a wavelength of an ultraviolet range, a delay means for delaying the timing of oscillating the second pulse laser beam a predetermined time after the timing of oscillating the first pulse laser beam and a common condenser for converging the first pulse laser beam and the second pulse laser beam.

Abstract: Disclosed a laser processing device capable of recognizing a failure of pulsed laser beam irradiation during a process of pulsed laser beam irradiation and taking appropriate measures. A first judgment section and a second judgment section monitor respectively whether a pulsed laser beam is actually irradiated by an oscillation of a laser oscillator at the timing when a pulse signal is output from a pulse signal output section and whether the pulse signal output section outputs the pulse signal as setting to the laser oscillator at the timing when the pulse signal is output based on the preset pulse number. When there is a failure of the pulsed laser beam irradiation during the processing, the occurrence of failure is recognized and it can be recognized whether the failure is caused by a laser beam irradiating unit or a controller including the pulse signal output section.

Abstract: A laser beam processing machine comprising a chuck table for holding a workpiece, a laser beam application means for applying a laser beam to the workpiece held on the chuck table, a processing feed means for moving the chuck table and the laser beam application means relative to each other in a processing-feed direction and an indexing-feed means for moving the chuck table and the laser beam application means in an indexing-feed direction perpendicular to the processing-feed direction, wherein the laser beam application means comprises a first laser beam application means for applying a first pulse laser beam having an energy density per one pulse of 20 to 60 J/cm2 and a second laser beam application means for applying a second pulse laser beam having an energy density per one pulse of 3 to 20 J/cm2.

Abstract: A method of forming a via hole reaching a bonding pad in a wafer having a plurality of devices formed on the front surface of a substrate and bonding pads formed on each of the devices by applying a pulse laser beam to the rear surface of the substrate, the method comprising the steps of: forming a non-through hole having a predetermined depth in the front surface of the substrate by applying a pulse laser beam having a spot diameter of 0.75 to 0.9 D when the diameter of the via hole to be formed is represented by D and an energy density per pulse of 40 to 60 J/cm2 to the rear surface of the substrate; and forming a via hole reaching a bonding pad in the substrate by applying a pulse laser beam having an energy density per pulse of 25 to 35 J/cm2 to the hole formed in the substrate.

Abstract: To provide a method of processing a sapphire substrate, where reduction in luminance of light emitting devices can be suppressed if a sapphire substrate is divided into individual light emitting devices by irradiation of a laser beam, a pulsed laser beam having a small pulse energy of 0.6 ?J to 10 ?J, and an extremely small pulse width in a range of femto-second is irradiated to the sapphire substrate while a condensing point is positioned within each of regions corresponding to predetermined division lines on the sapphire substrate so that affected zones are formed, thereby the laser beam can be irradiated even at a high peak power density of 4×1013 W/cm2 to 5×1015 W/cm2, consequently each of the affected zones can be formed at only a desired condensing point within the sapphire substrate, and necessary processing can be performed while damage to nitride semiconductors or the sapphire substrate is minimized.

Abstract: A method of forming a via hole reaching a bonding pad in a wafer having a plurality of devices formed on the front surface of a substrate and bonding pads formed on each of the devices by applying a pulse laser beam to the rear surface of the substrate, the method comprising the steps of: forming a via hole reaching a bonding pad from the rear side of the substrate by applying a pulse laser beam to the rear surface of the substrate; and removing metal contaminants adhering to the inner wall of the via hole in the via hole forming step by applying a pulse laser beam having a spot diameter of 0.2 to 0.3D and an energy density per pulse of 3 to 20 J/cm2 to the inner wall of the via hole formed in the substrate.