Abstract: In a laser beam processing method, when a laser beam is emitted along a second predetermined dividing line to form a second groove intersecting a first groove previously formed, the power output of the laser beam is allowed to be a first power output in a first interval, that is, until the second predetermined dividing line reaches a position immediately before the first groove. In a second interval from the position close to the first groove to the first groove reached by the second predetermined dividing line, the power output of the laser beam is set to a second power output lower than the first power output. Thus, overheat on the periphery of the second interval can be suppressed.

Abstract: A method of forming a via hole reaching a bonding pad in a wafer having an insulating film constituting a plurality of devices on the front surface of a substrate and bonding pads on each of the devices by applying a pulse laser beam to the rear surface of the substrate, the method comprising the steps of: forming a non-through hole reaching the insulating film formed on the substrate by applying a pulse laser beam to the rear surface of the substrate; forming an insulating film on the inner wall of the hole which is formed in the substrate by the first step; and forming a via hole reaching a bonding pad by applying a pulse laser beam to the hole having the insulating film which is formed on the inner wall by the insulating film forming step.

Abstract: A laser processing method for a transparent plate having a predetermined breaking line including the step of applying a pulsed laser beam to the transparent plate along the breaking line to thereby form a laser processed groove. The pulsed laser beam has an absorption wavelength to the transparent plate. The repetition frequency of the pulsed laser beam is set to 200 kHz or more and the energy density per pulse of the pulsed laser beam is set to 3.8 J/cm2 or more.

Abstract: A wafer laser processing method for forming grooves along streets by applying a pulse laser beam along the streets for sectioning a plurality of devices of a wafer having the plurality of devices which are composed of a laminate consisting of an insulating film and a functional film, on the front surface of a substrate, wherein the pulse laser beam is set to have a repetition frequency of 150 kHz to 100 MHz and an energy per unit length of 5 to 25 J/m.

Abstract: A laser beam processing machine comprising a chuck table for holding a workpiece, a laser beam application means for applying a laser beam to the workpiece held on the chuck table, a processing-feed means for moving the chuck table and the laser beam application means relative to each other in a processing-feed direction (X-axis direction), and an indexing-feed means for moving the chuck table and the laser beam application means relative to each other in an indexing-feed direction (Y-axis direction) perpendicular to the processing-feed direction (X-axis direction), wherein the laser beam application means comprises a laser oscillation means for oscillating a laser beam, a first acousto-optic deflection means for deflecting the optical axis of a laser beam oscillated by the laser beam oscillation means in the processing-feed direction (X-axis direction), and a second acousto-optic deflection means for deflecting the optical axis of a laser beam oscillated by the laser beam oscillation means in the indexing-fe

Abstract: In a via-hole formation method of forming a via-hole reaching a bonding pad, in a substrate of a wafer in which a plurality of devices are formed on a surface of the substrate and the bonding pad is formed on each of the devices, a pulse laser beam whose energy distribution is shaped into a top-hat shape is emitted to form a via-hole reaching a via-hole.

Abstract: A laser processing method including a first step of forming a first groove and a second step of forming a second groove on the workpiece. In the first step, the laser beam is intermittently applied to the first street except the intersections between the first street and the second street, thereby forming a discontinuous groove as the first groove in such a manner that each intersection is not grooved. In the second step, the laser beam is continuously applied to the second street, thereby forming a continuous groove as the second groove intersecting the first groove in such a manner that each intersection is grooved by the second groove. In the second step, heat generated at a portion immediately before each intersection is passed through the intersection to be dissipated forward, thereby suppressing overheating at this portion.

Abstract: In a laser beam processing method, when a laser beam is emitted along a second predetermined dividing line to form a second groove intersecting a first groove previously formed, the power output of the laser beam is allowed to be a first power output in a first interval, that is, until the second predetermined dividing line reaches a position immediately before the first groove. In a second interval from the position close to the first groove to the first groove reached by the second predetermined dividing line, the power output of the laser beam is set to a second power output lower than the first power output. Thus, overheat on the periphery of the second interval can be suppressed.

Abstract: An alignment method of a laser beam processing machine comprising a chuck table, a laser beam application means having a condenser for applying a laser beam to the workpiece held on the chuck table, an image pick-up means for picking up an image of the workpiece held on the chuck table and a control means having a memory for storing the specifications of the workpiece, the method comprising the steps of storing the design coordinates of a processing position set based on the mark indicating the crystal orientation of a wafer and alignment marks; picking up an image of the periphery of the wafer with the image pick-up means and locating the mark indicating the crystal orientation of the wafer at a predetermined position; positioning the design coordinate position of each of the alignment marks set based on the mark indicating the crystal orientation of the wafer right below the condenser and applying a laser beam from the condenser so as to remove the insulating film in the alignment mark areas; and picking up

Abstract: A wafer holding mechanism for holding a wafer affixed to a frame with a tape utilizing a suction force. The wafer holding mechanism includes a suction body, a wafer holder with a holding surface for holding the wafer via the tape, and a suction unit with a suction portion disposed at an outer peripheral edge of the wafer holder. The suction portion transmits a suction force across the holding surface though the outer peripheral edge of the wafer holder such that when the suction portion is covered and sealed by the tape, the wafer holder is held at the suction unit and the wafer is held at the holding surface.

Abstract: A laser beam machining apparatus including a chuck table for holding a wafer, and a laser beam irradiation unit for irradiating the wafer held on the chuck table with a pulsed laser beam. The laser beam machining apparatus further includes a plasma detecting part which includes a plasma receiving part for receiving a plasma generated by irradiation of the work with the laser beam radiated from the laser beam irradiation unit, and a spectrum analyzing part for analyzing the spectrum of the plasma received by the plasma receiving part; and a controller for determining the material of the work on the basis of a spectrum analysis signal from the spectrum analyzing part of the plasma detecting part and for controlling the laser beam irradiation unit.

Abstract: A laser processing apparatus comprising a chuck table, laser beam irradiation means for irradiating a workpiece held on the chuck table with a laser beam, and processing feed means for processing-feeding the chuck table and the laser beam irradiation means relative to each other. The laser beam irradiation means includes first laser beam irradiation means for throwing a first pulsed laser beam having a wavelength in the intermediate-infrared radiation region, and second laser beam irradiation means for throwing a second pulsed laser beam having a wavelength in the ultraviolet radiation region. The first laser beam irradiation means and the second laser beam irradiation means are set such that at least a part, in the processing feed direction, of the focus spot of the second pulsed laser beam overlaps the focus spot of the first pulsed laser beam.

Abstract: A via hole depth detector for detecting the depth of a via hole formed in a workpiece held on a chuck table, comprising: a first surface position detection means which comprises a first detection laser beam oscillation means for oscillating a first detection laser beam having a predetermined wavelength and detects the height position of an illuminated portion of the workpiece based on the reflected light of the first detection laser beam; a second surface position detection means which comprises a second detection laser beam oscillation means for oscillating a second detection laser beam having a wavelength different from the wavelength of the first detection laser beam and detects the height position of an illuminated portion of the workpiece based on the reflected light of the second detection laser beam; and a control means for obtaining the depth of the via hole formed in the workpiece based on a detection value obtained by the first surface position detection means and a detection value obtained by the s

Abstract: A laser beam machining apparatus including a laser beam irradiation unit, the laser beam irradiation unit including: a laser beam oscillator for oscillating a laser beam; a beam splitter by which the laser beam oscillated by the laser beam oscillator is split into a first laser beam and a second laser beam; a rotary half-wave plate disposed between the laser beam oscillator and the beam splitter; a condenser lens disposed in a first optical path for guiding the first laser beam split by the beam splitter; a first reflecting mirror disposed in a second optical path for guiding the second laser beam split by the beam splitter; a first quarter-wave plate disposed between the beam splitter and the first reflecting mirror; a second reflecting mirror disposed in a third optical path for splitting thereinto the second laser beam returned to the beam splitter through the second optical path; a second quarter-wave plate disposed between the beam splitter and the second reflecting mirror; and a cylindrical lens dispose

Abstract: A wafer separating method including a laminated member removing step for partially removing a laminated member of a wafer along streets by applying a laser beam to the wafer along the streets, and a cutting step for cutting a substrate of the wafer along the streets after the laminated member removing step.

Abstract: A laser processing machine that includes a chuck table adapted to hold a workpiece thereon and laser beam irradiation unit for applying a laser beam to the workpiece held on the chuck table. The laser beam irradiation unit includes: a laser beam oscillation section for emitting a pulse laser beam; a defection section for deflecting the pulse laser beam emitted from the laser beam oscillation section; and a concentrator having an ellipsoidal focusing spot forming section for focusing the pulse laser beam deflected by the deflection unit and forming a focusing spot into an ellipse.

Abstract: A wafer laser processing method for forming a groove in a wafer having a plurality of areas which are sectioned by streets formed in a lattice pattern on the front surface of a substrate, a device being formed in each of the plurality of areas, and an insulating film being formed on the surfaces of the devices, by applying a pulse laser beam along the streets, the method comprising a heating step for applying a first pulse laser beam set to an output for preheating the insulating film so as to soften it to the insulating film and a processing step for applying a second pulse laser beam set to an output for processing the insulating film and the substrate to the spot position of the first pulse laser beam applied in the heating step, the heating step and the processing step being carried out along the streets alternately.

Abstract: A laser beam processing machine comprising a laser beam application means for applying a pulse laser beam to a workpiece held on a chuck table and a controller, wherein the laser beam application means comprises a laser beam oscillation means for oscillating a pulse laser beam, an optical axis changing means for deflecting the optical axis of a pulse laser beam oscillated from the laser beam oscillation means in the processing-feed direction, and a condenser for converging a pulse laser beam whose optical axis has been deflected by the optical axis changing means; and the controller comprises a memory for storing a plurality of processing position coordinates set in the workpiece, controls the optical axis changing means according to the frequency of a pulse laser beam oscillated from the laser beam oscillation means and determines a plurality of predetermined processing position coordinates to be processed to ensure that the time interval between pulses of the pulse laser beam to be applied to the same proce

Abstract: A laser beam processing machine comprising a chuck table for holding a workpiece and a laser beam application means for applying a laser beam to the workpiece held on the chuck table, the laser beam application means comprising a laser beam oscillation means for oscillating a laser beam and a condenser for converging the laser beam oscillated by the laser beam oscillation means, wherein the condenser comprises a first cylindrical lens unit having a first cylindrical lens, a second cylindrical lens unit having a second cylindrical lens which is positioned such that its converging direction becomes perpendicular to the converging direction of the first cylindrical lens, and an interval adjustment mechanism for adjusting the interval between the first cylindrical lens unit and the second cylindrical lens unit.

Abstract: A method of forming a via hole reaching a bonding pad in a wafer having a plurality of devices on the front surface of a substrate and bonding pads formed on each of the devices by applying a pulse laser beam from the rear surface side of the substrate, wherein when a pulse laser beam having a spot diameter which satisfies D/2?d?D?2 ?m (wherein a diameter of the via hole to be formed is represented as D and a spot diameter of the pulse laser beam is represented as d) is applied in such a manner that the periphery of the spot moves along the inner circumference of the via hole to be formed, the pulse laser beam is applied at an angle of 120 to 180° from the previous application position.