Patents by Inventor Hiroshi Morikazu

Hiroshi Morikazu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20150332910
    Abstract: A wafer is formed by slicing a single crystal ingot and removing crystal strains remaining in a peripheral portion of the wafer. In the crystal strain removing step, a laser beam having such a wavelength as to be transmitted through the wafer is applied to the wafer from one side of the wafer in positions located along the margin of the wafer and spaced a predetermined distance inward from the margin, to cause growth of fine holes and amorphous regions shielding the fine holes, over the range from one side to the other side of the wafer, whereby shield tunnels are formed in an annular pattern. Then, an external force is applied to the wafer along the shield tunnels so as to break the wafer in the region of the shield tunnels, thereby removing the peripheral wafer portion where the crystal strains are remaining.
    Type: Application
    Filed: May 5, 2015
    Publication date: November 19, 2015
    Inventors: Hiroshi Morikazu, Kenya Kai
  • Patent number: 9174305
    Abstract: A laser processing apparatus removes a sapphire substrate from an optical device wafer configured by forming an optical device layer on the front side of the sapphire substrate through a buffer layer. A chuck table holds the optical device wafer. A pulsed laser beam is applied to the optical device wafer to break the buffer layer, and the light intensity of plasma light produced in the buffer layer by the application of the pulsed laser beam is detected and displayed. The light intensity of a predetermined wavelength region of the plasma light generated from a substance forming the buffer layer is detected.
    Type: Grant
    Filed: October 11, 2012
    Date of Patent: November 3, 2015
    Assignee: DISCO CORPORATION
    Inventors: Hiroshi Morikazu, Yoko Nishino
  • Patent number: 9174306
    Abstract: A laser processing method for a nonlinear crystal substrate having a plurality of crossing division lines which includes the step of applying a pulsed laser beam to a work surface of the nonlinear crystal substrate along the division lines to thereby form a plurality of laser processed grooves on the work surface along the division lines. The pulse width of the pulsed laser beam is set to 200 ps or less and the repetition frequency of the pulsed laser beam is set to 50 kHz or less.
    Type: Grant
    Filed: March 7, 2012
    Date of Patent: November 3, 2015
    Assignee: Disco Corporation
    Inventors: Hiroshi Morikazu, Yoko Nishino
  • Patent number: 9156109
    Abstract: A laser processing apparatus including a workpiece holding unit for holding a workpiece and a laser beam applying unit for applying a laser beam to the workpiece held by the workpiece holding unit. The laser beam applying unit includes a laser oscillator for oscillating a laser beam, a focusing unit for focusing the laser beam oscillated by the laser oscillator onto the workpiece held by the workpiece holding unit, and an optical system provided between the laser oscillator and the focusing unit for transmitting the laser beam oscillated by the laser oscillator. The laser beam applying unit further includes a wavelength converting mechanism provided between the optical system and the focusing unit for converting the wavelength of the laser beam oscillated by the laser oscillator into a short wavelength.
    Type: Grant
    Filed: March 4, 2013
    Date of Patent: October 13, 2015
    Assignee: DISCO CORPORATION
    Inventors: Keiji Nomaru, Goro Watanabe, Hiroshi Morikazu
  • Publication number: 20150259235
    Abstract: A plate-shaped object processing method forms a through hole of a desired shape in a plate-shaped object. The method includes a through hole contour forming step of performing laser processing within the plate-shaped object along a contour of the through hole to be formed, by positioning, within the plate-shaped object, a focal point of a pulsed laser beam of a wavelength capable of passing through the plate-shaped object. The beam is applied along the contour of the through hole to be formed by a pulsed laser beam irradiation unit including a condenser applying the laser beams. A through hole is formed by breaking the laser-processed contour of the through hole and forming the through hole by positioning an ultrasonic transducer of an ultrasonic wave applying unit in correspondence with the contour of the through hole to be formed, and applying an ultrasonic wave.
    Type: Application
    Filed: March 17, 2015
    Publication date: September 17, 2015
    Inventors: Noboru Takeda, Hiroshi Morikazu, Xiaoming Qiu, Fumiteru Tashino, Ken Togashi
  • Patent number: 9117895
    Abstract: A laser processing method for performing laser processing to a workpiece. The laser processing method includes: a filament forming step of applying a first pulsed laser beam having a transmission wavelength to the workpiece to thereby form a filament as an optical transmission line in the workpiece so that the filament extends from the surface of the workpiece to be irradiated with the first pulsed laser beam to the inside of the workpiece, the filament having a refractive index higher than that of the workpiece; and a laser processing step of applying a second pulsed laser beam to the filament after performing the filament forming step to thereby transmit the second pulsed laser beam along the filament, thereby processing the workpiece with the second pulsed laser beam.
    Type: Grant
    Filed: January 14, 2014
    Date of Patent: August 25, 2015
    Assignee: Disco Corporation
    Inventors: Hiroshi Morikazu, Noboru Takeda
  • Publication number: 20150221818
    Abstract: A lift-off method transfers an optical device layer in an optical device wafer to a transfer substrate. The optical device layer is formed on the front side of an epitaxy substrate through a buffer layer. A composite substrate is formed by bonding the transfer substrate through a bonding agent to the front side of the optical device layer, thereby forming a composite substrate. The buffer layer is broken up by applying a laser beam having a wavelength transmissive to the epitaxy substrate and absorptive to the buffer layer from the back side of the epitaxy substrate to the buffer layer after performing the composite substrate forming step, thereby breaking the buffer layer. An optical device layer is transferred by peeling off the epitaxy substrate from the optical device layer after performing the buffer layer breaking step, thereby transferring the optical device layer to the transfer substrate.
    Type: Application
    Filed: January 27, 2015
    Publication date: August 6, 2015
    Inventors: Hiroshi Morikazu, Tasuku Koyanagi, Shin Tabata
  • Publication number: 20150221819
    Abstract: A lift-off method transfers an optical device layer of an optical device wafer onto a transfer substrate. The optical device layer is stacked on a front face of an epitaxy substrate with a buffer layer provided therebetween. A complex substrate formation step forms a complex substrate by joining the transfer substrate to a front face of the optical device layer of the optical device wafer with an adhesive. A buffer layer destruction step irradiates a laser beam at a wavelength that penetrates the epitaxy substrate and is absorbed by the buffer layer from a rear side of the epitaxy substrate of the complex substrate so as to destroy the buffer layer. An optical device layer transfer step peels off the epitaxy substrate and transfers the optical device layer onto the transfer substrate.
    Type: Application
    Filed: February 3, 2015
    Publication date: August 6, 2015
    Inventor: Hiroshi Morikazu
  • Patent number: 9095931
    Abstract: A laser processed hole is formed in a workpiece. The workpiece has a first member formed of a first material bonded to a second member formed of a second material. The laser processed hole extends through the first member to the second member. The wavelength of plasma light generated by applying a pulsed laser beam to the first member and the second member is detected. Application of the laser beam is continued at a first power until the plasma light intensity generated from only the first member is decreased to reach a predetermined value. The laser beam is applied at a second power which is lower than the first power so as to not generate cracks in the first member when the plasma light intensity has reached the predetermined value. Application of the plasma laser beam stops when plasma light generated from the second member is detected.
    Type: Grant
    Filed: March 28, 2013
    Date of Patent: August 4, 2015
    Assignee: Disco Corporation
    Inventor: Hiroshi Morikazu
  • Publication number: 20150202857
    Abstract: A separation apparatus for separating a composite substrate formed from a first substrate and a second substrate joined together includes an exfoliation unit for advancing into a boundary region between the first substrate and the second substrate of the composite substrate supported by a supporting face of a supporting base and a side face supporting unit to exfoliate the composite substrate into the first substrate and the second substrate. The exfoliation unit includes a wedge portion for advancing into the boundary region between the first substrate and the second substrate, an exfoliation member having a gas outlet open at a tip end of the wedge portion, and an exfoliation member advancing and retracting unit for advancing and retracting the wedge portion of the exfoliation member to and from the boundary region between the first substrate and the second substrate which configure the composite substrate.
    Type: Application
    Filed: January 7, 2015
    Publication date: July 23, 2015
    Inventors: Hiroshi Morikazu, Tasuku Koyanagi, Shin Tabata
  • Patent number: 9044819
    Abstract: A laser processing apparatus includes a beam diameter adjusting unit provided between a laser oscillator and a focusing unit, an imaging unit for detecting the beam diameter of the laser beam directed to a detection path, an optical path length changing unit for moving the imaging unit along the detection path to thereby change an optical path length, and a controller for controlling the imaging unit, the beam diameter adjusting unit, and the optical path length changing unit. The controller operates to move the imaging unit to two positions where different optical path lengths are provided, detect the beam diameters of the laser beam at the two positions, and controls the beam diameter adjusting unit according to the two beam diameters detected above so that the two beam diameters have a predetermined relation.
    Type: Grant
    Filed: November 15, 2012
    Date of Patent: June 2, 2015
    Assignee: Disco Corporation
    Inventor: Hiroshi Morikazu
  • Publication number: 20150136312
    Abstract: A method for processing a workpiece including: a supporting plate preparing step of preparing a supporting plate having, on a top surface side of the supporting plate, a recessed portion configured to house a projecting portion provided in a device region of the workpiece; a positioning step of mounting the workpiece on the supporting plate such that the recessed portion of the supporting plate and the device region of the workpiece correspond to each other; a bonding step of forming a welded region in which the workpiece is welded to the supporting plate by irradiating a peripheral surplus region of the workpiece mounted on the supporting plate with a laser beam, whereby the workpiece is fixed on the supporting plate; and a processing step of processing the workpiece after performing the bonding step.
    Type: Application
    Filed: November 3, 2014
    Publication date: May 21, 2015
    Inventors: Frank Wei, Hiroshi Morikazu, Nao Hattori
  • Publication number: 20150044799
    Abstract: In an optical device wafer processing method, a light emitting layer on the front side of a wafer is removed by applying a pulsed laser beam to the wafer along division lines from the back side of a substrate with the focal point of the beam set near the light emitting layer, thereby partially removing the light emitting layer along the division lines. A shield tunnel is formed by applying the beam to the wafer along the division lines from the back of the substrate with the focal point of the beam set near the front of the substrate. This forms a plurality of shield tunnels arranged along each division line, each shield tunnel extending from the front side of the substrate to the back side thereof. Each shield tunnel has a fine hole and an amorphous region formed around the fine hole for shielding the fine hole.
    Type: Application
    Filed: August 6, 2014
    Publication date: February 12, 2015
    Inventors: Noboru Takeda, Hiroshi Morikazu
  • Patent number: 8912464
    Abstract: A laser processed hole is formed in a workpiece. The workpiece has a first member formed of a first material bonded to a second member formed of a second material. A value is set representing the minimum number of shots of a pulsed laser beam when the spectral wavelength of plasma has changed from the spectral wavelength inherent in the first material to that of the second material. A maximum shot number is set representing a maximum value of the number of beam shots when the spectral wavelength of the plasma has completely changed. The beam is stopped if the number of shots has reached the minimum value and the spectral wavelength of the plasma has changed whereas the beam is continued until the number of shots reaches the maximum value if the spectral wavelength of the plasma has not changed even after the number of shots has reached the minimum value.
    Type: Grant
    Filed: August 23, 2012
    Date of Patent: December 16, 2014
    Assignee: Disco Corporation
    Inventor: Hiroshi Morikazu
  • Publication number: 20140334511
    Abstract: A laser processing method of applying a pulsed laser beam to a single crystal substrate to thereby process the single crystal substrate. The laser processing method includes a numerical aperture setting step of setting the numerical aperture (NA) of a focusing lens for focusing the pulsed laser beam so that the value obtained by dividing the numerical aperture (NA) of the focusing lens by the refractive index (N) of the single crystal substrate falls within the range of 0.05 to 0.
    Type: Application
    Filed: May 13, 2014
    Publication date: November 13, 2014
    Applicant: DISCO CORPORATION
    Inventors: Noboru Takeda, Hiroshi Morikazu
  • Publication number: 20140256150
    Abstract: A wafer processing method for forming a via hole in a wafer. The wafer processing method includes a filament forming step of applying a pulsed laser beam to the wafer, the pulsed laser beam having a transmission wavelength to the wafer, in the condition where the focal point of the pulsed laser beam is set inside the wafer in a subject area where the via hole is to be formed, thereby forming an amorphous filament inside the wafer in the subject area, and an etching step of etching the amorphous filament formed inside the wafer by using an etching agent to thereby form the via hole inside the wafer.
    Type: Application
    Filed: February 25, 2014
    Publication date: September 11, 2014
    Applicant: Disco Corporation
    Inventors: Hiroshi Morikazu, Noboru Takeda
  • Publication number: 20140248757
    Abstract: A wafer processing method for dividing a wafer along a plurality of division lines to obtain a plurality of individual chips. The wafer processing method includes a filament forming step of applying a pulsed laser beam having a transmission wavelength to the wafer along each division line in the condition where the focal point of the pulsed laser beam is set inside the wafer in a subject area to be divided, thereby forming a plurality of amorphous filaments inside the wafer along each division line, and an etching step of etching the amorphous filaments formed inside the wafer along each division line by using an etching agent to thereby divide the wafer into the individual chips along the division lines.
    Type: Application
    Filed: February 20, 2014
    Publication date: September 4, 2014
    Applicant: DISCO CORPORATION
    Inventors: Hiroshi Morikazu, Noboru Takeda
  • Publication number: 20140213040
    Abstract: A laser processing method for performing laser processing to a workpiece. The laser processing method includes: a filament forming step of applying a first pulsed laser beam having a transmission wavelength to the workpiece to thereby form a filament as an optical transmission line in the workpiece so that the filament extends from the surface of the workpiece to be irradiated with the first pulsed laser beam to the inside of the workpiece, the filament having a refractive index higher than that of the workpiece; and a laser processing step of applying a second pulsed laser beam to the filament after performing the filament forming step to thereby transmit the second pulsed laser beam along the filament, thereby processing the workpiece with the second pulsed laser beam.
    Type: Application
    Filed: January 14, 2014
    Publication date: July 31, 2014
    Applicant: Disco Corporation
    Inventors: Hiroshi Morikazu, Noboru Takeda
  • Patent number: 8779325
    Abstract: A laser beam processing machine includes a laser beam application device and a controller. The controller controls deflecting of the optical axis of a pulse laser beam from the laser beam application device in the processing-feed direction according to a plurality of processing position coordinates, and according to the frequency of the beam, to ensure that there is a predetermined time interval between pulses applied to the same processing position coordinates. One pulse is applied at a time to each of the plurality of processing position coordinates.
    Type: Grant
    Filed: March 3, 2008
    Date of Patent: July 15, 2014
    Assignee: Disco Corporation
    Inventors: Keiji Nomaru, Yutaka Kobayashi, Hiroshi Morikazu
  • Patent number: 8759195
    Abstract: An optical device layer (ODL) in an optical device wafer is transferred to a transfer substrate. The ODL is formed on the front side of an epitaxy substrate through a buffer layer. The ODL is partitioned by a plurality of crossing streets to define regions where a plurality of optical devices are formed. The transfer substrate is bonded to the front side of the ODL, and the epitaxy substrate is cut along crossing streets into a plurality of blocks. A laser beam is applied to the epitaxy substrate from the back side of the epitaxy substrate to the unit of the optical device wafer and the transfer substrate in the condition where the focal point of the laser beam is set in the buffer layer, thereby decomposing the buffer layer. The epitaxy substrate divided into the plurality of blocks is peeled off from the ODL.
    Type: Grant
    Filed: December 20, 2011
    Date of Patent: June 24, 2014
    Assignee: Disco Corporation
    Inventors: Hiroshi Morikazu, Yoko Nishino