Abstract: A photo-detecting element is covered with a passivation film having an uneven surface to avoid multi-reflection for the monochromatic incident light. The uneven film transmits the same intensity of incident light even if the mean thickness of uneven film is not constant over the entire surface of a semiconductor substrate.

Abstract: A plurality of opto-electro conversion elements are arranged integrally in a row to constitute a line image sensor to produce respective image bit signals. A plurality of switching elements are connected to the corresponding conversion elements and switchable between on and off states to read out the corresponding bit image signals. A scanning circuit scans sequentially the switching elements to successively turn on them to thereby effect the sequential reading of bit image signals. An initiating circuit is connected to the scanning circuit for generating an initiating signal effective to initiate the scanning circuit. An ending circuit is also connected to the scanning circuit and operates after the switching element of last stage is turned off for generating an ending signal indicative of the ending of scanning operation for one line. A control circuit receives the initiating and ending signals and produces a control signal.

Abstract: The semiconductor image sensing device is comprised of a single crystal substrate of one conductivity type, formed thereon with an array of photodetector 5 for effecting photo-electric conversion, a read-out circuit for sequentially reading out an output signal from each photodetector, an amplifier for voltage-converting the read output signal, and a voltage regulator for providing a constant voltage. The read-out circuit and the photodetectors are driven by a lower voltage supplied from the integrated voltage regulator so as to reduce a switching noise generated in the read-out circuit. S/N ratio of the semiconductor image sensor is improved by reducing the switching noise. Further, the power consumption can be saved by driving the read-out circuit at the lower voltage.

Abstract: A semiconductor device for image sensing and printing comprises an integrated circuit composed of a single semiconductor substrate on which are integrated a linear array of phototransistors, driving circuits and control circuits. The control circuits are operable in a read mode for processing output signals from the phototransistors to enable transmission thereof to an external device and are operable in a print mode for processing inputted image data signals to produce printing signals which are applied to the driving circuits for use in driving an external printing device.

Abstract: A semiconductor reading device comprises an insulated substrate and a plurality of integrated circuit reading chips disposed on the substrate. Each reading chip comprises a semiconductor substrate containing thereon a plurality of bipolar phototransistors which are responsive to incident light for producing video signals. The phototransistors are formed in the surface of the semiconductor substrate and are equidistantly spaced from one another in a longitudinal direction of the semiconductor substrate. A plurality of signal transmitting elements in the form of MOS transistor are connected to respective ones of the phototransistors and are switchable between a conducting state to transmit therethrough the video signal from its corresponding phototransistor and a non-conducting state. A multi-stage shift register sequentially switches the signal transmitting elements from the non-conducting state to the conducting state to sequentially read out the video signals from the phototransistors.

Abstract: The image sensor of the linear type includes a plurality of photoelectric conversion elements, switching elements each having an input terminal connected to each photoelectric conversion element and an output terminal for reading out a detection signal produced from the corresponding photoelectric conversion element, and a scanning circuit for sequentially driving the switching elements. A first common line is connected to output terminals of odd-numbered switching elements. A second common line is connected to output terminals of even-numbered switching elements. A first reading gate has an output terminal and an input terminal connected to the first common line. A first reset gate has an output terminal and an input terminal connected to the first common line. A second reading gate has an output terminal and an input terminal connected to the second common line. A second reset gate has an output terminal and an input terminal connected to the second common line.

Abstract: A photoelectric conversion array is comprised of a longitudinal semiconductor substrate formed with a plurality of doped regions electrically isolated from one another and equidistantly aligned in the longitudinal direction of the substrate.

Abstract: A photo-electro conversion sensor of the image sensor is covered with a single layer passivation film or a multi-layer passivation film composed of plural layers having the substantially same refractive indexes, and the thickness of the passivation film is arranged some ten times as much as the wavelength of incident light so as to eliminate interference.

Abstract: A method for manufacturing a semiconductor device using inclined stage of a dicing saw in order to cut the semiconductor substrate obliquely with respect to the depthwise direction. When a plurality of semiconductor chips diced obliquely are connected, a degree of connecting accuracy is increased, and it is possible to realize a contact-type image sensor of high resolving power and high accuracy.