Abstract: A radiator includes: a tube through which a coolant flows; and a single tank including: a supplying chamber communicating with an end of the tube, for supplying the tube with the coolant; and a collecting chamber communicating with the other end of the tube, partitioned to the supplying chamber, and for collecting the coolant discharged from the tube.

Abstract: A cooling jacket includes: first and second pipe portions through which a coolant flows; and a main portion connected with side surfaces of the first and second pipe portions, defining, with a single member, a flow path through which the coolant flows, and cooling an object to be cooled.

Abstract: A radiator includes: a tube through which a coolant flows; and a single tank including: a supplying chamber communicating with an end of the tube, for supplying the tube with the coolant; and a collecting chamber communicating with the other end of the tube, partitioned to the supplying chamber, and for collecting the coolant discharged from the tube.

Abstract: There is provided a fibrous particle generating apparatus and a test system. The fibrous particle generating apparatus includes a base material containing a fibrous material; a holding unit holding the base material; a fibrous particle generator generating fibrous particles by chafing the base material; and a movement unit moving the holding unit such that the base material held by holding unit is chafed against the fibrous particle generator. With this configuration, fibrous particles can be stably generated, and an evaluation of the object apparatus can be carried out on the basis of the generated fibrous particles.

Abstract: A heat sink for absorbing heat which is generated by an electronic module by a coolant which flows through its internal portion, provided with a first heat sink part which is contiguous with the electronic module, a second heat sink part which is contiguous with the electronic module, and a heat discharger which is arranged spaced from the first heat sink part and second heat sink part at an opposite side from the electronic module and which is arranged in a flow path between the first heat sink part and second heat sink part.

Abstract: A radiator includes a core unit, which includes a flow inlet which coolant enters, a flow outlet from which the coolant exits, a plurality of coolant pathways including at least an outer coolant pathway, an inner coolant pathway, a branching point, and a merging point, the outer coolant pathway being disposed to surround the inner coolant pathway, the coolant being divided at the branching point and merging at the merging point, and a connecting pathway to connect between the merging point of the outer coolant pathway and the branching point of the inner coolant pathway, wherein the flow inlet is in communication with a branching point of an outermost one of the plurality of coolant pathways, and the flow output is in communication with a merging point of an innermost one of the plurality of coolant pathways.

Abstract: A heat sink for absorbing heat which is generated by an electronic module by using a coolant which flows in its internal portion, comprises a housing which is provided with, in its internal portion, a first surface which is located in the vicinity of the electronic module and a second surface which faces the first surface and comprises fins which extend from the first surface toward the second surface, wherein a projecting portion projecting from the second surface toward the first surface is formed at the second surface, between the top edges of the fins on the second surface side and the second surface.

Abstract: A radiator includes: a tube through which a coolant flows; and a single tank including: a supplying chamber communicating with an end of the tube, for supplying the tube with the coolant; and a collecting chamber communicating with the other end of the tube, partitioned to the supplying chamber, and for collecting the coolant discharged from the tube.

Abstract: A cooling jacket includes: first and second pipe portions through which a coolant flows; and a main portion connected with side surfaces of the first and second pipe portions, defining, with a single member, a flow path through which the coolant flows, and cooling an object to be cooled.

Abstract: There is provided a fibrous particle generating apparatus and a test system. The fibrous particle generating apparatus includes a base material containing a fibrous material; a holding unit holding the base material; a fibrous particle generator generating fibrous particles by chafing the base material; and a movement unit moving the holding unit such that the base material held by holding unit is chafed against the fibrous particle generator. With this configuration, fibrous particles can be stably generated, and an evaluation of the object apparatus can be carried out on the basis of the generated fibrous particles.

Abstract: A method for manufacturing a semiconductor device having a movable portion includes the steps of: forming a trench on a semiconductor layer so that the trench reaches an insulation layer; and forming a movable portion by etching a sidewall of the trench so that the semiconductor layer is separated from the insulation layer. The steps of forming the trench and forming the movable portion are performed by a reactive ion etching method. The insulation layer disposed on the bottom of the trench is prevented from charging positively in the step of forming the trench. The insulation layer disposed on the bottom of the trench is charged positively in the step of forming the movable portion.

Abstract: A protective sheet is fixed to a jig, and regions of the protective sheet corresponding to regions where dicing-cut is to be performed are removed to form grooves. Then, a semiconductor wafer is bonded to the protective sheet at an opposite side of the jig, and the jig is detached from the protective sheet and the semiconductor wafer bonded together. After that, the semiconductor wafer is cut into semiconductor chips by dicing along the grooves of the protective sheet. Because the protective sheet is not cut by dicing, no scraps of the protective sheet is produced, thereby preventing contamination to the chips.

Abstract: A method for manufacturing a semiconductor device having a movable unit includes a step of forming an SOI substrate that includes a semiconductor substrate, an insulating layer, and a semiconductor layer such that the insulating layer is located between the semiconductor layer and the semiconductor substrate. The method further includes a step of dry etching the semiconductor layer to form a trench with a charge prevented from building up on a surface of the insulating layer that is exposed at a bottom of the trench during the dry etching. The method further includes a step of dry etching a sidewall defining the trench at a portion adjacent to the bottom of the trench to form the movable unit. The later dry etching is performed with a charge building up on the surface of the insulating layer such that etching ions strike to etch the portion of the sidewall.

Abstract: A method of manufacturing a semiconductor device is provided. The device is manufactured with use of an SOI (Silicon On Insulator) substrate having a first silicon layer, an oxide layer, and a second silicon layer laminated in this order. After forming a trench reaching the oxide layer from the second silicon layer, dry etching is performed, thus allowing the oxide layer located at the trench bottom to be charged at first. This charging forces etching ions to impinge upon part of the second silicon layer located laterally to the trench bottom. Such part is removed, forming a movable section. For example, ions to neutralize the electric charges are administered into the trench, so that the electric charges are removed from charged movable electrodes and their charged surrounding regions. Removing the electric charges prevents the movable section to stick to its surrounding portions.

Abstract: A method for manufacturing a semiconductor device having a movable portion includes the steps of: forming a trench on a semiconductor layer so that the trench reaches an insulation layer; and forming a movable portion by etching a sidewall of the trench so that the semiconductor layer is separated from the insulation layer. The steps of forming the trench and forming the movable portion are performed by a reactive ion etching method. The insulation layer disposed on the bottom of the trench is prevented from charging positively in the step of forming the trench. The insulation layer disposed on the bottom of the trench is charged positively in the step of forming the movable portion.

Abstract: A protective sheet is fixed to a jig, and regions of the protective sheet corresponding to regions where dicing-cut is to be performed are removed to form grooves. Then, a semiconductor wafer is bonded to the protective sheet at an opposite side of the jig, and the jig is detached from the protective sheet and the semiconductor wafer bonded together. After that, the semiconductor wafer is cut into semiconductor chips by dicing along the grooves of the protective sheet. Because the protective sheet is not cut by dicing, no scraps of the protective sheet is produced, thereby preventing contamination to the chips.

Abstract: A semiconductor device has a semiconductor wafer having sensing portions exposed on a surface thereof and an adhesive sheet attached to the semiconductor wafer as a protective cap to cover the sensing portions. The adhesive sheet is composed of a flat adhesive sheet and adhesive disposed generally on an entire surface of the adhesive sheet. Adhesion of the adhesive is selectively reduced by UV irradiation to have adhesion reduced regions, and the adhesion reduced regions face the sensing portions. The protective cap can be produced with high productivity, and securely protect the sensing portions when the semiconductor wafer is diced and is transported.

Abstract: A method of manufacturing a semiconductor device is provided. The device is manufactured with use of an SOI (Silicon On Insulator) substrate having a first silicon layer, an oxide layer, and a second silicon layer laminated in this order. After forming a trench reaching the oxide layer from the second silicon layer, dry etching is performed, thus allowing the oxide layer located at the trench bottom to be charged at first. This charging forces etching ions to impinge upon part of the second silicon layer located laterally to the trench bottom. Such part is removed, forming a movable section. For example, ions to neutralize the electric charges are administered into the trench, so that the electric charges are removed from charged movable electrodes and their charged surrounding regions. Removing the electric charges prevents the movable section to stick to its surrounding portions.

Abstract: A method for manufacturing a semiconductor device having a movable unit includes a step of forming an SOI substrate that includes a semiconductor substrate, an insulating layer, and a semiconductor layer. The method further includes a step of dry etching the semiconductor layer to form a trench and a step of dry etching a sidewall defining the trench at a portion adjacent to a bottom of the trench to form the movable unit. The later dry etching is implemented with a charge building up on a surface of the insulating layer that is exposed during the former dry etching to etch the portion. In addition, the later dry etching is implemented at an etching rate higher than that at which the former dry etching is implemented to reduce the deposition amount of a protection film deposited on a reverse side of the movable unit during the later dry etching.

Abstract: A method of manufacturing a semiconductor device is provided. The device is manufactured with use of an SOI (Silicon On Insulator) substrate having a first silicon layer, an oxide layer, and a second silicon layer laminated in this order. After forming a trench reaching the oxide layer from the second silicon layer, dry etching is performed, thus allowing the oxide layer located at the trench bottom to be charged at first. This charging forces etching ions to impinge upon part of the second silicon layer located laterally to the trench bottom. Such part is removed, forming a movable section. For example, ions to neutralize the electric charges are administered into the trench, so that the electric charges are removed from charged movable electrodes and their charged surrounding regions. Removing the electric charges prevents the movable section to stick to its surrounding portions.