Patents by Inventor Hiroshi Muto

Hiroshi Muto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5168337
    Abstract: A diode which includes a first region formed in a polycrystalline silicon layer formed on a substrate. The diode has a predetermined width W and is one of an intrinsic region and a region including impurities at a low concentration therein, a second region and a third region including P-type impurities and N-type impurities therein respectively and both being oppositely arranged from each other with the first region therebetween in the polycrystalline silicon layer. Electrodes are electrically connected to the second region and the third region respectively, and further the film characteristic of the polycrystalline silicon layer and the predetermined width W thereof are determined in such a manner as to fulfill the following equation:W.sub.D .ltoreq.W.ltoreq.LL represents a carrier diffusion length and W.sub.
    Type: Grant
    Filed: April 8, 1992
    Date of Patent: December 1, 1992
    Assignee: Nippondenso Co., Ltd.
    Inventors: Hiroshi Muto, Masami Yamaoka
  • Patent number: 5136348
    Abstract: A structure and manufacturing method for a thin film semiconductor device consisting of a single diode or a plurality of diodes connected in series, the device being formed of at least one pair of mutually adjacent P-type (23a) and N-type (23b) regions formed in a layer of polycrystalline silicon (23) deposited on an insulating film (22) upon a substrate (21), to thereby define at least one PN junction. Each of the p-type regions and N-type regions is shaped as a rectangle, with opposite ends of each PN junction formed between these regions being respectively defined by two opposing sides of the polycrystalline silicon layer. Since each of the PN junctions is substantially rectilinear, an even distribution of current flow through each PN junction is attained, whereby a high resistance to destruction and an extremely stable value of reverse bias breakdown voltage are achieved.
    Type: Grant
    Filed: January 28, 1991
    Date of Patent: August 4, 1992
    Assignee: Nippondenso Co., Ltd.
    Inventors: Yukio Tsuzuki, Masami Yamaoka, Hiroshi Muto
  • Patent number: 4448121
    Abstract: A rotary printing press assembly includes an inspection apparatus interposed between a sheet feeder for feeding printed sheets and a rotary printing press having a printing cylinder for printing additional indicia on the printed sheets. The inspection apparatus has a pair of inspection cylinders rotatable in opposite directions. A printed sheet is supplied from the sheet feeder and is held at its face and back against peripheral surfaces of the inspection. Detectors are disposed in confronting relationship to the peripheral surface of the inspection surface cylinders for inspecting the printed sheet on the inspection cylinders for any defect and for generating signals in response to detection of any defect on the printed sheet. The printing cylinder is movable away from an operational position adjacent an impression cylinder to an inoperational position away therefrom in response to a signal from the detectors indicating a defective sheet.
    Type: Grant
    Filed: May 21, 1982
    Date of Patent: May 15, 1984
    Assignee: Komori Printing Machinery Co., Ltd.
    Inventors: Chiyomatsu Uno, Hiroshi Muto