Abstract: A group-III nitride semiconductor laser device comprises: a laser structure including a semiconductor region and a support base having a semipolar primary surface of group-III nitride semiconductor; a first reflective layer, provided on a first facet of the region, for a lasing cavity of the laser device; and a second reflective layer, provided on a second facet of the region, for the lasing cavity. The laser structure includes a laser waveguide extending along the semipolar surface. A c+ axis vector indicating a <0001> axial direction of the base tilts toward an m-axis of the group-III nitride semiconductor at an angle of not less than 63 degrees and less than 80 degrees with respect to a vector indicating a direction of an axis normal to the semipolar surface. The first reflective layer has a reflectance of less than 60% in a wavelength range of 525 to 545 nm.

Abstract: A laser diode device includes: a semiconductor substrate including a semi-polar surface, the semiconductor substrate being formed of a hexagonal III-nitride semiconductor; an epitaxial layer including a light emitting layer, the epitaxial layer being formed on the semi-polar surface of the semiconductor substrate, and the epitaxial layer including a ridge section; a first electrode formed on a top surface of the ridge section; an insulating layer covering the epitaxial layer in an adjacent region of the ridge section and a side surface of the ridge section, the insulating layer covering part or all of side surfaces of the first electrode continuously from the epitaxial layer; a pad electrode formed to cover a top surface of the first electrode and the insulating layer, the pad electrode being electrically connected to the first electrode; and a second electrode formed on a surface, of the semiconductor substrate, opposite to the semi-polar surface.

Abstract: A common rail fuel injection system includes injectors having a fuel intake port and being provided for respective cylinders of a multi-cylinder diesel internal combustion engine, a common rail accumulating pressurized fuel, a high-pressure supply pump supplying high-pressure fuel, a fuel supply pipe causing the common rail and the high-pressure supply pump to communicate with each other. The fuel injection pipes communicating with pressure supply ports provided in the common rail and causing the injectors and the pressure supply ports to communicating with each other. The fuel injection pipes cause at least three injectors to communicate with one another in series. The number NP of pressure supply ports is less than the number PI of injectors, and supply of high-pressure fuel to the respective injectors for the cylinders is performed through fuel injection pipes of two lines.

Abstract: Provided is a fuel cell catalyst layer which has a catalytic performance equivalent to or higher than fuel cell catalyst layers containing platinum alone and which is inexpensive. The fuel cell catalyst layer of the present invention includes a metal oxycarbonitride-containing layer (I) and a platinum-containing layer (II). It is preferable that the mass ratio per unit area of the metal oxycarbonitride in the layer (I) to platinum in the layer (II) (metal oxycarbonitride/platinum) is 2 to 500. It is preferable that the mass per unit area of platinum in the layer (II) is 0.005 to 0.2 mg/cm2.

Abstract: When comparing a reference image and a registered image, a reference image is defined as a high-resolution image of the highest resolution and a first low-resolution image is generated on a lower level, and a second low-resolution image is generated on a lower level. Registered images are read one-at-a-time, feature regions are set in the hierarchical images of the registered images, and corresponding regions are found in the reference image through hierarchical searching from the low-resolution image towards the high-resolution image. An evaluation is made as to whether to select the registered image that has been read out, based on a similarity between the low-resolution hierarchical image, for example, a feature region of the hierarchical image of the registered image, and the corresponding region of the hierarchical image of the reference image, to narrow down the registered images to be compared to the reference image.

Abstract: An air conditioning system of a vehicle including a controller and sensors in communication with the controller. The sensors include an interior temperature sensor for determining the temperature of the vehicle interior and an inner surface temperature sensor for determining the temperature of the inner surface of the vehicle's windshield. The controller determines a dew-point for the vehicle interior based on the sensed interior temperature. The controller adjusts the dew-point or the inner surface temperature based on a correction value, and performs a defogging operation when the temperature of the inner surface of the windshield is less than the dew-point, wherein the dew-point or the inner surface temperature is adjusted.

Abstract: A nitride semiconductor light-emitting device has a semiconductor ridge, and includes a first inner-layer between an active layer and an n-type cladding and a second inner-semiconductor layer between the active layer and a p-type cladding. The first inner-layer, active layer and second inner-layer constitute a core-region. The n-type cladding, core-region and p-type cladding constitute a waveguide-structure. The active layer and the first inner-layer constitute a first heterojunction inclined at an angle greater than zero with respect to a reference plane of the c-plane of the nitride semiconductor of the n-type cladding. Piezoelectric polarization of the well layer is oriented in a direction from the p-type cladding toward the n-type cladding. The second inner-layer and InGaN well layer constitute a second heterojunction. A distance between the ridge bottom and the second heterojunction is 200 nm or less. The ridge includes a third heterojunction between the second inner-layer and the p-type cladding.

Abstract: A nitride semiconductor laser includes an electrically conductive support substrate with a primary surface of a gallium nitride based semiconductor, an active layer provided above the primary surface, and a p-type cladding region provided above the primary surface. The primary surface is inclined relative to a reference plane perpendicular to a reference axis extending in a direction of the c-axis of the gallium nitride based semiconductor. The p-type cladding region includes first and second p-type Group III nitride semiconductor layers. The first p-type semiconductor layer comprises an InAlGaN layer including built-in anisotropic strain. The second p-type semiconductor layer comprises semiconductor different from material of the InAlGaN layer. The first nitride semiconductor layer is provided between the second p-type semiconductor layer and the active layer. The second p-type semiconductor layer has a resistivity lower than that of the first p-type semiconductor layer.

Abstract: A feature parameter candidate generation apparatus has a storage unit that stores the values of feature parameters extracted from each of samples, an index value calculation unit that calculates an index value, which is obtained by normalizing the number of the kinds of the values of feature parameters by the number of the samples, for each of the feature parameters, an evaluation object selection unit that selects combinations of feature parameters which are objects to be evaluated, an evaluation unit that evaluates whether the uniformity of a frequency distribution of index values of the individual feature parameters for combinations of feature parameters selected as the objects to be evaluated satisfies a predetermined criterion, and a candidate determination unit that determines, as feature parameter candidates to be given to the model generation device, a combination of feature parameters that is evaluated to satisfy the predetermined criterion.

Abstract: The present invention relates to an impeller manufacturing method in which a thermal cycle is performed on an assembly body with a brazing material formed of a Ni-containing Au alloy being placed at a bond portion of at least two impeller constituent members. The thermal cycle includes a temperature increasing process with a temperature increasing rate of 20° C./hr. to 100° C./hr., the process including a first intermediate retention and a second intermediate retention each keeping the temperature, the first intermediate retention performed in a temperature range of 500° C. to 850° C. and the second intermediate retention performed in a temperature range of 850° C. to 950° C. (but not including 850° C.). In the thermal cycle, the temperature is increased in a temperature range exceeding 950° C. after the second intermediate retention at a rate lower than that before the second intermediate retention.

Abstract: The present invention relates to a method of joining a hub 11 and a shroud 12 of an impeller 10, either one of which has blades 13 integrally formed thereon, by welding. During the welding, in an upright state in which the hub 11 is placed to face a mount surface, the hub 11 and the shroud 12 are placed on top of each other to form an assembled body 10. Welding is performed on the assembled body 10 covered with a heat insulating jacket 30(a to g), the jacket 30 covering the assembled body 10 except an open region (OP) and an inflow port 14IN required for welding. When welding of one open region OP is completed, a new open region OP is formed by moving the heat insulating jacket 30 with respect to the assembled body, and then the next welding is performed.

Abstract: A group-III nitride semiconductor laser device comprises: a laser structure including a semiconductor region and a support base having a semipolar primary surface of group-III nitride semiconductor; a first reflective layer, provided on a first facet of the region, for a lasing cavity of the laser device; and a second reflective layer, provided on a second facet of the region, for the lasing cavity. The laser structure includes a laser waveguide extending along the semipolar surface. A c+ axis vector indicating a <0001> axial direction of the base tilts toward an m-axis of the group-III nitride semiconductor at an angle of not less than 63 degrees and less than 80 degrees with respect to a vector indicating a direction of an axis normal to the semipolar surface. The first reflective layer has a reflectance of less than 60% in a wavelength range of 525 to 545 nm.

Abstract: The present invention is to provide an optical surface defect inspection apparatus or an optical surface defect inspection method that can improve a signal-to-noise ratio according to a multi-segmented cell method without performing autofocus operations, and can implement highly sensitive inspection. The present invention is an optical surface defect inspection apparatus or an optical surface defect inspection method in which an inspection beam is applied onto a test subject, an image of a scattered light from the surface of the test subject is formed on a photo-detector, and a defect on the surface of the test subject is inspected based on an output from the photo-detector. The photo-detector has an optical fiber bundle. One end thereof forms a circular light receiving surface to receive the scattered light. The other end thereof is connected to a plurality of light receiving devices.

Abstract: [Problem] The present invention provides a novel pathological marker of angiitis which serves as an alternative to MPO-ANCAs. [Means for Solution]According to one embodiment of the present invention, a method for testing angiitis which includes a step of detecting an antibody specifically recognizing a moesin in a biological sample is provided. In addition, according to another embodiment of the present invention, a reagent for testing angiitis which contains a substance that detects an antibody specifically recognizing a moesin in a biological sample is provided.

Abstract: According to one embodiment, an information processing apparatus applied to a client management system managing desktop environments of client terminals comprises a first controller and a second controller. The first controller controls creation processing for first image files which are disk image files for the desktop environments and contain no information unique to the client terminals and difference files for formation of second image files respectively containing information unique to the client terminals based on the first image files. The second controller controls deletion processing for the difference file for which the second image file is completely acquired by a corresponding client terminal.

Abstract: The present invention provides an apparatus and method which enable detecting a microscopic defect sensitively by efficiently collecting and detecting scattering light from a defect in a wider region without enlarging the apparatus. In the apparatus for inspecting a defect on a surface of a sample, including illumination means which irradiates a surface of a sample with laser, reflected light detection means which detects reflected light from the sample, and signal processing means which processes a detected signal and detecting a defect on the sample, the reflected light detection means is configured to include a scattering light detection unit which collects scattering light components of the reflected light from the sample by excluding specularly reflected light components by using an aspheric flannel lens and detecting the scattering light components.

Abstract: The present invention provides an apparatus and method which enable detecting a microscopic defect sensitively by efficiently collecting and detecting scattering light from a defect in a wider region without enlarging the apparatus. In the apparatus for inspecting a defect on a surface of a sample, including illumination means which irradiates a surface of a sample with laser, reflected light detection means which detects reflected light from the sample, and signal processing means which processes a detected signal and detecting a defect on the sample, the reflected light detection means is configured to include a scattering light detection unit which collects scattering light components of the reflected light from the sample by excluding specularly reflected light components by using an aspheric flannel lens and detecting the scattering light components.

Abstract: According to one embodiment, an apparatus is configured to carry out a 1st virtual machine and a 2nd virtual machine. The 1st virtual machine includes a notifying module configured to notify a 1st port number to the 2nd virtual machine, and a 1st transmitter configured to transmit, to a network, a 1st packet including a source port number indicating port number other than the 1st port number. The 2nd virtual machine includes a 2nd transmitter configured to transmit, to the network, a 2nd packet including a source port number indicating the 1st port number. The apparatus includes a sorting module configured to sort a received packet to the 1st virtual machine or the 2nd virtual machine.

Abstract: According to one embodiment, an apparatus includes a controller. The controller is configured to control an operation environment of a virtual machine which runs on a hypervisor. The controller includes a change module configured to change the virtual machine from an operating state to a sleep state, in response to a logout request for an operating system in the virtual machine, a storing module configured to store first image data indicating contents of a memory in a storage as an operation environment, a restoration module configured to restore the contents of the memory to contents based on second image data, and a return module configured to return the virtual machine to the operating state after the contents of the memory is restored to the contents based on the second image data.

Abstract: A gallium nitride-based semiconductor laser device with reduced threshold current. The gallium nitride-based semiconductor laser device is provided with an n-type cladding layer, an n-side light guide layer, an active layer, a p-side light guide layer, and a p-type cladding layer. The n-side light guide layer and the p-side light guide layer both contain indium. Each of indium compositions of the n-side light guide layer and the p-side light guide layer is not less than 2% and not more than 6%. A film thickness of the n-type cladding layer is in the range of not less than 65% and not more than 85% of a total of the film thickness of the n-type cladding layer and a film thickness of the p-type cladding layer.