Abstract: In the Bi-CMOS process of manufacturing a semiconductor device by an effective combination of a bipolar transistor manufacturing process and a CMOS transistor manufacturing process in the case of the formation of a silicide film on a Bi-CMOS device, in which the bipolar transistor having an inner base region made of a silicon film grown by epitaxy and the MOS transistor having silicide formed on the gate electrode, source region and drain region in a self-aligned manner therewith are formed on the same semiconductor substrate, while the silicon film of the inner base region is epitaxially grown in a step, a silicon film is also epitaxially grown on the source/drain regions at the same time in the same step.

Abstract: A process for producing an alkoxy-substituted tri-phenylamine comprising reacting an alkoxy-substituted cyclohexanone with a diphenylamine or an aniline, while forming said cyclohexanone in the same system from an alkoxy-substituted phenol by using said phenol as a hydrogen acceptor, in the presence of a hydrogen transfer catalyst and a catalytic amount of the alkoxy-substituted cyclohexanone corresponding to the alkoxy-substituted phenol used for the reaction, or after converting partially the alkoxy-substituted phenol to a catalytic amount of the alkoxy-substituted cyclohexanone under a hydrogen pressure in the presence of a hydrogen transfer catalyst, wherein a surface-supported catalyst is used as the hydrogen transfer catalyst.

Abstract: An N type diffusion layer as a collector is formed on a P type silicon substrate, and a field oxide film is formed on this diffusion layer. An MoSi.sub.2 film is formed on this field oxide film and a first opening is formed on those field oxide film and MoSi.sub.2 film to expose the diffusion layer. An N type layer is selectively epitaxially grown only on the bottom of the first opening. A base layer is formed on the N type layer, the side wall of the first opening and the MoSi.sub.2 film. The base layer on the N type layer is formed by epitaxial growth, while the base layer on the side wall of the first opening and the MoSi.sub.2 film is formed in a polycrystalline state. A first silicon oxide film is formed on this based layer. The first silicon oxide film is thinner on the polycrystalline base layer than on the epitaxially grown base layer. The first silicon oxide film is subjected to anisotropic etching to expose only the surface of the epitaxially grown base layer.

Abstract: A novel bis-urea compound, preparation process of the compound, and preparation process of 1,3-dialkyl-2-imidazolidinone are disclosed and the disclosure provides a novel preparation process of 1,3-dialkyl-2-imidazolidinone and simultaneously enables effective utilization of N,N',N"-trialkyldiethylentriamine which lacks a large amount use and is desired to develop new application.

Abstract: A novel bis-urea compound, preparation process of the compound, and preparation process of 1,3-dialkyl-2-imidazolidinone are disclosed and the disclosure provides a novel preparation process of 1,3-dialkyl-2-imidazolidinone and simultaneously enables effective utilization of N,N',N"-trialkyldiethylentriamine which lacks a large amount use and is desired to develop new application.

Abstract: A process for the preparation of 4-methoxy-2,2',6-trimethyldiphenylamine, which comprises heating and reacting 2,6-dimethylcyclohexanone and 2-methyl-4-methoxyaniline in the presence of a dehydrogenation catalyst while removing the resultant hydrogen and water from the reaction system.

Abstract: The present invention relates to 1,3,6-Trialkylhexahydro-1,3,6-triazocine-2-on represented by the formula (1): ##STR1## wherein R is a C.sub.1 .about.C.sub.8 alkyl group and a preparation process of the compound comprising reacting N,N',N"-trialkyldiethylenetriamine represented by the formula (2): ##STR2## wherein R is a C.sub.1 .about.C.sub.8 alkyl group, with urea, phosgene or carbon dioxide.

Abstract: The present invention relates to a network management system, and more particularly to a network management system for managing the states of plural alarm information generating from each one of the objects, which are to be managed, and stored in a state management area.Detailed information storage program of agents stores into detailed information files detailed information contained in alarm information transmitted from objects; alarm information coding program of a manager converts alarm information into alarm codes; and state management program stores the alarm codes into a state management area. A knowledge base enters combinations of alarm codes and effects of alarm information as decision patterns, and failure decision program decides upon failures by matching, at the time of receiving alarm information, the knowledge base and the state management area with each other.

Abstract: In a method of manufacturing a bonded semiconductor substrate, a SiGe mixed crystal layer, a silicon layer containing N-type impurities, a SiGe mixed crystal layer containing N-type impurities of high concentration, and a silicon layer containing N-type impurities of high concentration are formed in this order on a top surface of a silicon substrate by an epitaxial growth process to form a first semiconductor substrate. A silicon oxide film is formed on a surface of a silicon substrate to form a second semiconductor substrate. The first and second semiconductor substrates are bonded to each other by heat treatment, with their top surfaces contacting each other. The first semiconductor substrate is etched from the back surface thereof until the SiGe mixed crystal layer is exposed, and the SiGe mixed crystal layer is etched until the silicon layer containing N-type impurities is exposed. This method prevents the thickness of the element forming layer from varying.

Abstract: The specification discloses a hetero bipolar transistor which comprises a semiconductor substrate, a first silicon layer serving as a collector, a first silicon-germanium layer serving as a base, a second silicon layer serving as a collector, and a second silicon-germanium layer. A side wall of the second silicon-germanium layer is in contact with side walls of the first silicon layer, the first silicon-germanium layer and the second silicon layer. The second silicon-germanium layer is disposed to surround the first silicon layer, the first silicon-germanium layer, and the second silicon layer, and has an energy band gap substantially the same as that of the first silicon-germanium layer.

Abstract: The specification discloses a hetero bipolar transistor which comprises a semiconductor substrate, a first silicon layer serving as a collector, a first silicon-germanium layer serving as a base, a second silicon layer serving as a collector, and a second silicon-germanium layer. A side wall of the second silicon-germanium layer is in contact with side walls of the first silicon layer, the first silicon-germanium layer and the second silicon layer. The second silicon-germanium layer is disposed to surround the first silicon layer, the first silicon-germanium layer, and the second silicon layer, and has an energy band gap substantially the same as that of the first silicon-germanium layer.

Abstract: A semiconductor integrated circuit according to the present invention comprises a semiconductor substrate, a plurality of MOS field effect transistors each formed on a surface region of the semiconductor substrate and having source and drain regions, a gate insulating film formed on a region between the source and drain regions, and a gate electrode formed on the gate insulating film. The gate electrode includes a polycrystalline SiGe-mixed crystal which is expressed by Si.sub.1-x Ge.sub.x (1>x>0).

Abstract: According to the method of manufacturing a semiconductor device of the present invention, an insulation film is formed on a silicon substrate, and a resist film having a predetermined pattern is formed on the insulation film, followed by forming an opening on the insulation film with the resist film performing as a mask. Then, an impurity having conductivity are implanted into said silicon substrate with the resist film performing as a mask and silicon ions are implanted into the silicon substrate with the resist film performing as a mask. After that, the resist film is removed. Further, a refractory metal film which covers at least the opening is formed. Moveover, a diffusion layer which causes electrical activation of the impurity having conductivity is formed by annealing, followed by formation a silicide layer at where the surfaces of the silicon substrate and the metal film meet.

Abstract: A suspension member mounting structure for mounting on a vehicle body a suspension member, with which left and right suspension arms each supporting a wheel are connected, through a front cushion group and a rear cushion group. The front cushion group has two cushion mounts attached to two positions of the suspension member in front of a rotary axis of the wheels and the rear cushion group has two cushion mounts attached to two positions of the suspension member behind the rotary axis of the wheels. Each cushion mount of the front cushion group is disposed to have a hole first, through which a bolt extends, extending vertically of the vehicle body and each cushion mount of the rear cushion group is disposed to have a second hole, through which a bolt extends, extending longitudinally of the vehicle body.

Abstract: A pharmaceutical composition for the treatment of infantile autism which contains tetrahydrobiopterin or a derivative thereof as a major effective ingredient and 5-hydroxytryptophan and/or L-DOPA as an optional auxiliary effective ingredient is provided.

Abstract: A pharmaceutical composition for the treatment of infantile autism which contains tetrahydrobiopterin or a derivative thereof as a major effective ingredient and 5-hydroxytryptophan and/or L-DOPA as an optional auxiliary effective ingredient is provided.

Abstract: A flotation process in which copper ores or copper converter slags are ground and firstly have added thereto benzotriazole or alkyl benzotriazole as an activator and secondly one or more collectors selected from the group consisting of xanthates, dithiophosphates, thiocarbamate esters, dithiocarbamates, mercaptans and dixanthogens and further, if desired, a promoter such as kerosene, light oil, bunker oil or petroleum lubricant is added to improve the recovery for the flotation of copper ores or copper smelter slags.