Abstract: A resin composition usable for encapsulating a semiconductor, wherein the resin composition has a viscosity of 5000 Pa.s or less as determined at 80° C., and wherein the resin composition comprises (A) an epoxy resin having two or more epoxy groups in one molecule; (B) a curing agent; and (C) silica particles having an average particle diameter dmax of from 3 to 50 nm and a half-width of 1.5 times or less of the average particle diameter dmax; a sheet-like resin composition usable for encapsulating a semiconductor, wherein the sheet-like resin composition has a viscosity of 10000 Pa.s or less as determined at 80° C., and wherein said sheet-like resin composition comprises (A) an epoxy resin having two or more epoxy groups in one molecule; (B) a curing agent; and (C) silica particles having an average particle diameter dmax of from 3 to 50 nm and a half-width of 1.

Abstract: A thermosetting resin composition which contains: (A) an epoxy resin having at least two epoxy groups per molecule; (B) a hardener; (C) a compound represented by the following general formula (1) or (2); and (D) a microcapsule type hardening accelerator containing microcapsules each having a structure made up of a core containing a hardening accelerator and a shell covering the core and containing a polymer having a structural unit represented by the following general formula (3), and which, when examined by differential scanning calorimetry at a heating rate of 10° C./min, shows an exothermic peak due to reaction in the range of from 180 to 250° C., and a semiconductor device obtained through sealing with the composition are described.

Abstract: A resin composition usable for encapsulating a semiconductor, comprising (A) an epoxy resin having two or more epoxy groups in one molecule; (B) a curing agent; and (C) inorganic composite oxide particles constituted by silicon dioxide and at least one metal oxide selected from the group consisting of oxides of metal atoms belonging to Group III and Group IV of the Periodic Table excluding silicon; a semiconductor device comprising a wiring circuit board, a semiconductor element, and the above resin composition; and a method for manufacturing a semiconductor device comprising the steps of adhering a resin sheet comprising the resin composition of claim 1 and a stripping sheet to a semiconductor circuit side of a bump-mounting wafer, removing the stripping sheet leaving only the resin composition to the wafer, and cutting the wafer into individual chips.

Abstract: A laminated sheet for adhering to a circuit side of a projected electrode-mounting wafer in a step of grinding a backside of the wafer, wherein the laminated sheet comprises at least a layer (layer A) contacting with the circuit side, made of a thermosetting resin, a layer (layer B) directly laminated on the layer A, made of a thermoplastic resin having a tensile modulus of from 1 to 300 MPa at 40° to 80° C., and an outermost layer (layer C) made of a thermoplastic resin which is non-plastic at a temperature of at least 25° C.; A method for manufacturing a semiconductor device, comprising the steps of grinding a backside of a projected electrode-mounting wafer wherein the laminated sheet is adhered to a circuit side of the wafer, removing other layers besides the layer A of the laminated sheet, and cutting the wafer into individual chips; and a semiconductor device obtainable by the method.

Abstract: A thermosetting resin composition which contains:

Abstract: A thermosetting resin composition usable for sealing a gap formed between a printed circuit board and a semiconductor element in a semiconductor package having a face-down structure; a semiconductor device comprising a printed circuit board, a semiconductor element, and the thermosetting resin composition mentioned above, wherein a gap formed between the printed circuit board and the semiconductor element is sealed by the thermosetting resin composition; and a process for manufacturing the semiconductor device.

Abstract: The present invention provides a granulated bleaching activator having a high solubility, that is, a granulated bleaching activator comprising (a) a bleaching activator and (b) at least one nonionic surfactant selected from the group consisting of a nonionic surfactant (b1) having a melting point less than 20° C. and an alkylene oxide addition type nonionic surfactant (b2) having a melting point less than 20° C., (b1) fulfilling the specific requirements concerning solubility, in a specific ratio.

Abstract: A thermosetting resin composition usable for sealing a gap formed between a printed circuit board and a semiconductor element in a semiconductor package having a face-down structure; a semiconductor device comprising a printed circuit board, a semiconductor element, and the thermosetting resin composition mentioned above, wherein a gap formed between the printed circuit board and the semiconductor element is sealed by the thermosetting resin composition; and a process for manufacturing the semiconductor device.

Abstract: The present invention provides a method of producing powder of e.g. a polycarboxylic acid-based copolymer efficiently at a high yield. The method of the present invention comprises forming a sticky thin-film of the polycarboxylic acid-based copolymer or the like on a support, reducing a stickiness of the said thin-film and powdering the said thin-film.

Abstract: The present invention provides a process for the production of a semiconductor device comprising a semiconductor element provided on a printed circuit board with a plurality of connecting electrode portions provided interposed therebetween, the gap between said printed circuit board and said semiconductor element being sealed with an underfill resin layer.

Abstract: The present invention provides a method of producing powder of e.g. a polycarboxylic acid-based copolymer efficiently at a high yield. The method of the present invention comprises forming a sticky thin-film of the polycarboxylic acid-based copolymer or the like on a support, reducing a stickiness of the said thin-film and powdering the said thin-film.

Abstract: Described is a process for the fabrication of a semiconductor device, which comprises a step of simultaneously or successively mounting at least one semiconductor element having a connecting electrode portion onto each of both sides of an interconnection circuit substrate through an encapsulating resin layer and a step of connecting said at least one semiconductor element with an interconnection electrode on each of both sides of said interconnection circuit substrate by making use of the adhesive force of said encapsulating resin layer.

Abstract: A granular bleach activator composition and a process for producing a granular bleach activator composition having excellent solubility and storability, which comprises using at least one member selected from the group consisting of substances (a), (b), (c) and (d) as a core particle and granulating the core particle and a powdery bleach activator in the presence of a water-soluble organic binder to give granules having a weight-average particle diameter of 100 to 3,000 .mu.m:(a) a water-soluble substance having a pH in a 3 wt. % aqueous solution thereof, of 2 to 10,(b) a borate-coated sodium percarbonate, the particle of which has an inner surface and/or an outer surface coated with the borate,(c) a borate-coated sodium perborate, the particle of which has an inner surface and/or an outer surface coated with the borate, and(d) sodium perborate other than the borate-coated sodium perborate (c).

Abstract: A process for producing a high bulk density granular detergent involving the steps of:(1) milling a solidified detergent material;(2) classifying the milled detergent material obtained in step (1) into fine powders and coarse powders;(3) granulating the fine powders classified in step (2);(4) mixing the granulation product of fine powders obtained in step (3) with the course powders classified in step (2); and(5) surface modifying the mixture obtained in the step (4).