Abstract: Disclosed is a measuring structure for a magneto encephalographic equipment superconducting magnetic-shield comprising a vacuum-tight body comprising an outer enclosure wall, a first inner enclosure wall inserted in the outer enclosure wall to define an upper closed space, and a second inner enclosure wall to define a lower open space. The first and second inner enclosure walls are arranged with the bottom of the first inner enclosure wall facing the ceiling of the second inner enclosure wall. A first enclosure of high critical temperature superconductor and a second enclosure of high permeability material are concentrically arranged in the annular vacuum space defined between the first and second inner enclosure walls and the outer enclosure wall.

Abstract: It is possible to improve the negative resistance characteristic that can be expected when an SNS (superconductor-normal conductor-superconductor) structure is used as a structure unit for series connection. On the top of a first superconducting electrode, a second superconducting electrode is superimposed so as to sandwich an insulation film between the first and second superconducting electrodes, with parts of cross sections of the second superconducting electrode and insulation film placed on the top. A normal superconducting line electrically connects the first and second superconducting electrodes passing along the cross section of the insulation film, thereby constituting a structure unit having a single weak link. A plurality of such structure units connected in series are prepared. At the both ends of the series the first or second superconducting electrode is an element connected to a leading line.

Abstract: A process for manufacturing a spherical activated carbon, characterized by comprising the steps of: (1) forming a spherical substance of a heat-fusible resin, (2) oxidizing the spherical substance of a heat-fusible resin to form a heat-infusible spherical substance, and (3) activating the heat-infusible spherical substance to form the spherical activated carbon is disclosed. According to the process for the manufacture, a spherical activated carbon having desirable properties, such as an average particle diameter, a particle size distribution, a pore volume, or a specific surface area, can be easily prepared.

Abstract: A power semiconductor device includes: a first semiconductor layer of a first conductivity type; a second semiconductor layer of the first conductivity type and a third semiconductor layer of a second conductivity type formed on the first semiconductor layer and alternately arranged along at least one direction parallel to a surface of the first semiconductor layer; a first main electrode; a fourth semiconductor layer of the second conductivity type selectively formed in a surface of the second semiconductor layer and a surface of the third semiconductor layer; a fifth semiconductor layer of the first conductivity type selectively formed in a surface of the fourth semiconductor layer; a second main electrode; and a control electrode. At least one of the second and the third semiconductor layers has a dopant concentration profile along the one direction, the dopant concentration profile having a local minimum at a position except both ends thereof.

Abstract: A semiconductor device includes: a semiconductor layer of a first conductivity type; a first semiconductor pillar region of the first conductivity type provided on a major surface of the semiconductor layer; a second semiconductor pillar region of a second conductivity type provided adjacent to the first semiconductor pillar region on the major surface of the semiconductor layer, the second semiconductor pillar region forming a periodic arrangement structure substantially parallel to the major surface of the semiconductor layer together with the first semiconductor pillar region; a first main electrode; a first semiconductor region of the second conductivity type; a second semiconductor region of the first conductivity type; a second main electrode; a control electrode; and a high-resistance semiconductor layer provided on the semiconductor layer in an edge termination section surrounding the first semiconductor pillar region and the second semiconductor pillar region.

Abstract: The semiconductor substrate comprises a first monitor part 14a formed in a first region near a center of a semiconductor wafer 10, which includes a first element having a first electrode 24 formed over the semiconductor wafer 10 with a first insulation film 22 formed therebetween, and a first electrode pad 32 electrically connected to the first electrode 24; and a second monitor part 14b formed in a second region different from the first region, which includes a second element having a second electrode 24 formed on the semiconductor wafer 10 with a second insulation film 22 formed therebetween, and a second electrode pad 32 electrically connected to the second electrode 24. When electric breakdown has taken place in both the first monitor part 14a and the second monitor part 14b, it can be judged that too large static electricity was generated upon the release of the surface protection film 39.

Abstract: A semiconductor device according to the present invention comprises a first semiconductor layer of the first conductivity type. A pillar layer includes first semiconductor pillars of the first conductivity type and second semiconductor pillars of the second conductivity type arranged periodically and alternately on the first semiconductor layer. The first and second semiconductor pillar layer have a cross section in the shape of stripes in a planar direction. There is a semiconductor base layer of the second conductivity type selectively formed in a surface of the second semiconductor pillar, and a semiconductor diffusion layer of the first conductivity type selectively formed in a surface of the semiconductor base layer. The longitudinal direction of the shape of stripes is made almost same as the direction of pattern shift caused in the first semiconductor layer.

Abstract: This invention is intended to provide an HBT capable of achieving, if the HBT is a collector-up HBT, the constriction of the emitter layer disposed directly under an external base layer, and reduction in base-emitter junction capacity, or if the HBT is an emitter-up HBT, reduction in base-collector junction capacity. For the collector-up HBT, window structures around the sidewalls of a collector are used to etch either the emitter layer disposed directly under the external base layer, or an emitter contact layer For the emitter-up HBT, window structures around the sidewalls of an emitter are used to etch either the collector layer disposed directly under the external base layer, or a collector contact layer. In both HBTs, the external base layer is supported by a columnar structure to ensure mechanical strength.

Abstract: The method of manufacturing a wiring substrate includes the steps of: forming a photocatalyst containing layer which is made of a material containing a photocatalytic material, on a substrate made of an insulating material; forming a resin layer in regions other than wire regions on the photocatalyst containing layer; radiating ultraviolet light on the photocatalyst containing layer while the substrate provided with the resin layer and the photocatalyst containing layer is immersed in a solution containing at least a metal ion and a sacrificial reagent, in such a manner that metal is deposited on exposed regions of the photocatalyst containing layer.

Abstract: A process for producing a spherical carbon material, comprising: subjecting a spherical vinyl resin to an oxidation treatment in an oxidizing gas atmosphere to obtain a spherical carbon precursor, and carbonizing the spherical carbon precursor at 1000-2000° C. in a non-oxidizing gas atmosphere. The thus-obtained spherical carbon material exhibits excellent performances, including high output performance and durability, when used, e.g., as a negative electrode material for non-aqueous electrolyte secondary batteries.

Abstract: An optical spectrum analyzer includes an optical section 130 for executing light dispersion into a spectrum and wavelength sweep for input measured light, converting the measured light into an electric signal, and outputting the electric signal, a control section 101 for controlling the wavelength sweep of the optical section and outputting a sampling clock of a period shifting from a cycle period of the measured light for each wavelength of the wavelength sweep, and a measurement section 140 for executing sequential sampling of the electric signal from the optical section for each sampling clock.

Abstract: An optical spectrum analyzer has a deflection section for changing an incidence angle of measured light on a diffraction grating, a plurality of light detection sections for detecting the dispersed measured light and outputting an electric signal responsive to the light strength, and a signal processing section for finding an optical spectrum of the measured light based on the electric signal from the light detection sections. The light detection sections are arranged along the wavelength dispersion direction of the diffraction grating and output electric signals independently of each other.

Abstract: A drug effective for the treatment and prevention of psychiatric disorders such as schizophrenia, anxiety and related ailments thereof, depression, bipolar disorder and epilepsy. The drug antagonizes the action of group II metabotropic glutamate receptors and shows high activity in oral administraiton A 2-amino-bicyclo[3.1.0] hexane-2,6-dicarboxylic ester derivative represented by formula [I] [wherein R1 and R2 are identical or different, and each represents a hydrogen atom, a C1-10alkyl group or the like; X represents a hydrogen atom or a fluorine atom; Y represents —OCHR3R4 or the like (wherein R3 and R4 are identical or different, and each represents a hydrogen atom, a C1-10alkyl group or the like; and n represents integer 1 or 2)], a pharmaceutically acceptable salt thereof or a hydrate thereof.

Abstract: An antidepressant comprising, as an active ingredient, a compound having an antagonistic effect on group II metabotropic glutamate receptors, as well as a 2-amino-3-alkoxy-6-fluoro-bicyclo[3.1.0]hexane-2,6-dicarboxylic acid derivative of Formula [I]: [wherein R1 and R2, which may be the same or different, each represent a hydroxyl group, a C1-10 alkoxy group, etc.; R3 represents a C1-10 acyl group, a C1-6 alkoxy-C1-6 acyl group, etc.; and R4 and R5, which may be the same or different, each represent a hydrogen atom, a C1-10 alkyl group, etc.] or a pharmaceutically acceptable salt or hydrate thereof.

Abstract: A screw compressor comprising: a low pressure stage compressor body; a high pressure stage compressor body that further compresses a compressed air compressed by the low pressure stage compressor body; pinion gears for example, respectively, provided on, for example, a male rotor of the low pressure stage compressor body and, for example, a male rotor of the high pressure stage compressor body; a motor; a bull gear for example, provided on a rotating shaft of the motor; and an intermediate shaft supported rotatably and provided with a pinion gear, which meshes with the bull gear, and a bull gear, which meshes with the pinion gears. Thereby, it is possible to make the motor relatively low in rotating speed while inhibiting the gears from being increased in diameter, thus enabling achieving reduction in cost.

Abstract: One object of the present invention is to provide a drug that is effective in treatments for and prevention of psychiatric disorders and in treatments for and prevention of neurological diseases, inhibiting a Group II metabotropic glutamate receptor. The object is solved by a 2-amino-bicyclo[3.1.0]hexane-2,6-dicarboxylic acid derivative represented by formula [I]: (wherein R1 and R2 are the same or different, and each represents a hydrogen atom, C1-10alkyl group, etc; X represents a hydrogen atom or a fluorine atom; and Y represents an amino group, —SR3, —S(O)nR7, —SCHR3R4, —S(O)nCHR3R4, —NHCHR3R4, —N(CHR3R4)(CHR5R6), —NHCOR3 or —OCOR7), a pharmaceutically acceptable salt thereof, or a hydrate thereof and so on.

Abstract: This invention is intended to provide an HBT capable of achieving, if the HBT is a collector-up HBT, the constriction of the emitter layer disposed directly under an external base layer, and reduction in base-emitter junction capacity, or if the HBT is an emitter-up HBT, reduction in base-collector junction capacity. For the collector-up HBT, window structures around the sidewalls of a collector are used to etch either the emitter layer disposed directly under the external base layer, or an emitter contact layer For the emitter-up HBT, window structures around the sidewalls of an emitter are used to etch either the collector layer disposed directly under the external base layer, or a collector contact layer. In both HBTs, the external base layer is supported by a columnar structure to ensure mechanical strength.

Abstract: In order to provide an optical sampling waveform measuring apparatus which can measure an ultra-high speed optical signal accurately by using a stable, narrow pulse, and a low timing jitter sampling optical pulse, an optical sampling waveform measuring apparatus is provided with a passive mode-locked fiber ring laser for generating a sampling optical pulse and a cavity length varying device which adjusts the cavity length in a passive mode-locked fiber ring laser.

Abstract: In a microwave integrated circuit, a capacitance element is connected to the input side of each active device to remove noise signals. These capacitance elements and the wires, etc. for them have prevented the miniaturization of the chip since they require large areas on the chip. Further, in the case of a semiconductor active device, particularly a field-effect transistor, the gate metal formed on the step portions of the mesa may break or the gate metal may come into contact with the active layer during the “mesa-type device separation” process, resulting in degradation in the characteristics. To overcome the above problems, the present invention provides a device configuration in which: the capacitance element is formed right under one terminal of the semiconductor device; and one of the two electrodes of the capacitance element is connected to the underside of the terminal.

Abstract: An object of the invention is to realize an optical spectrum analyzer capable of performing high-speed waveform sweep. The invention is to make improvements to an optical spectrum analyzer for measuring a spectrum of light to be measured by collimating light to be measured by collimator means, spectroscopically separating the collimated light incident from the collimator means according to an incident angle by a diffraction grating, and detecting the light spectroscopically separated by the diffraction grating by a photodetector via a slit. The device is characterized by including an acoustooptic deflector provided between the collimator means and the diffraction grating for deflecting the collimated light to be measured and changing the incident angle on the diffraction grating.