Patents by Inventor Hiroshi Ohta
Hiroshi Ohta has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20120241823Abstract: A power semiconductor device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer provided thereon, mutually separated columnar third semiconductor layers of a second conductivity type extending within the second semiconductor layer, island-like fourth semiconductor layers of the second conductivity type provided on the third semiconductor layers, fifth semiconductor layers of the first conductivity type, sixth semiconductor layers of the second conductivity type, a gate electrode, a first electrode, and a second electrode. The fifth semiconductor layers are selectively provided on the fourth semiconductor layers. The sixth semiconductor layer electrically connects two adjacent fourth semiconductor layers. The first electrode is in electrical connection with the first semiconductor. The second electrode is in electrical connection with the fourth semiconductor layers and the fifth semiconductor layers via the openings in the gate electrode.Type: ApplicationFiled: March 19, 2012Publication date: September 27, 2012Applicant: KABUSHIKI KAISHA TOSHIBAInventors: HIROSHI OHTA, YASUTO SUMI, KIYOSHI KIMURA, JUNJI SUZUKI, HIROYUKI IRIFUNE
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Patent number: 8258133Abstract: A drug effective for the treatment and prevention of psychiatric disorders such as schizophrenia, anxiety and related ailments thereof, depression, bipolar disorder and epilepsy. The drug antagonizes the action of group II metabotropic glutamate receptors and shows high activity in oral administration. A 2-amino-bicyclo[3.1.0]hexane-2,6-dicarboxylic ester derivative represented by formula [I] [wherein R1 and R2 are identical or different, and each represents a hydrogen atom, a C1-10alkyl group or the like; X represents a hydrogen atom or a fluorine atom; Y represents —OCHR3R4 or the like (wherein R3 and R4 are identical or different, and each represents a hydrogen atom, a C1-10alkyl group or the like; and n represents integer 1 or 2)], a pharmaceutically acceptable salt thereof or a hydrate thereof.Type: GrantFiled: October 7, 2011Date of Patent: September 4, 2012Assignee: Taisho Pharmaceutical Co., Ltd.Inventors: Akito Yasuhara, Kazunari Sakagami, Hiroshi Ohta, Atsuro Nakazato
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Patent number: 8231363Abstract: A screw compressor comprising: a low pressure stage compressor body; a high pressure stage compressor body that further compresses a compressed air compressed by the low pressure stage compressor body; pinion gears for example, respectively, provided on, for example, a male rotor of the low pressure stage compressor body and, for example, a male rotor of the high pressure stage compressor body; a motor; a bull gear for example, provided on a rotating shaft of the motor; and an intermediate shaft supported rotatably and provided with a pinion gear, which meshes with the bull gear, and a bull gear, which meshes with the pinion gears. Thereby, it is possible to make the motor relatively low in rotating speed while inhibiting the gears from being increased in diameter, thus enabling achieving reduction in cost.Type: GrantFiled: March 6, 2006Date of Patent: July 31, 2012Assignee: Hitachi Industrial Equipment Systems Co., Ltd.Inventors: Hitoshi Nishimura, Tomoo Suzuki, Hiroshi Ohta
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Patent number: 8232593Abstract: A power semiconductor device according to an embodiment of the present invention includes a first semiconductor layer of a first or second conductivity type, a second semiconductor layer of the first conductivity type formed on the first semiconductor layer, a third semiconductor layer of the second conductivity type selectively formed on a surface of the second semiconductor layer, at least one trench formed in a periphery of the third semiconductor layer on the surface of the second semiconductor layer, a depth of a bottom surface of the at least one trench being deeper than a bottom surface of the third semiconductor layer, and shallower than a top surface of the first semiconductor layer, and some or all of the at least one trench being in contact with a side surface of the third semiconductor layer, at least one insulator buried in the at least one trench, a first main electrode electrically connected to the first semiconductor layer, and a second main electrode electrically connected to the third semicoType: GrantFiled: February 26, 2010Date of Patent: July 31, 2012Assignee: Kabushiki Kaisha ToshibaInventors: Wataru Saito, Syotaro Ono, Hiroshi Ohta, Munehisa Yabuzaki, Nana Hatano, Miho Watanabe
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Patent number: 8227854Abstract: A semiconductor device includes: a drift layer having a superjunction structure; a semiconductor base layer selectively formed in a part of one surface of the drift layer; a first RESURF layer formed around a region having the semiconductor base layer formed thereon; a second semiconductor RESURF layer of a conductivity type which is opposite to a conductivity type of the first semiconductor RESURF layer; a first main electrode connected to a first surface of the drift layer; and a second main electrode connected to a second surface of the drift layer. The first RESURF layer is connected to the semiconductor base layer. The second semiconductor RESURF layer is in contact with the first semiconductor RESURF layer.Type: GrantFiled: November 7, 2007Date of Patent: July 24, 2012Assignee: Kabushiki Kaisha ToshibaInventors: Syotaro Ono, Wataru Saito, Masakatsu Takashita, Yasuto Sumi, Masaru Izumisawa, Hiroshi Ohta
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Patent number: 8221094Abstract: A screw compressor comprising: a low pressure stage compressor body; a high pressure stage compressor body that further compresses a compressed air compressed by the low pressure stage compressor body; pinion gears for example, respectively, provided on, for example, a male rotor of the low pressure stage compressor body and, for example, a male rotor of the high pressure stage compressor body; a motor; a bull gear for example, provided on a rotating shaft of the motor; and an intermediate shaft supported rotatably and provided with a pinion gear, which meshes with the bull gear, and a bull gear, which meshes with the pinion gears. Thereby, it is possible to make the motor relatively low in rotating speed while inhibiting the gears from being increased in diameter, thus enabling achieving reduction in cost.Type: GrantFiled: January 6, 2009Date of Patent: July 17, 2012Assignee: Hitachi Industrial Equipment Systems Co., Ltd.Inventors: Hitoshi Nishimura, Tomoo Suzuki, Hiroshi Ohta
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Patent number: 8193176Abstract: The present invention provides a prophylactic or therapeutic agent for dementia, Alzheimer's disease, attention-deficit hyperactivity disorder, schizophrenia, eating disorders, obesity, diabetes, hyperlipidemia, sleep disorders, narcolepsy, sleep apnea syndrome, circadian rhythm disorder, depression, allergic rhinitis or other diseases. A phenylpyrazole derivative represented by formula (1) or a pharmaceutically acceptable salt thereof: {wherein R1 and R2, which may be the same or different, each represent C1-C6 alkyl or C3-C8 cycloalkyl, or R1 and R2 are attached to each other together with their adjacent nitrogen atom to form a 4- to 7-membered saturated heterocyclic ring (wherein said saturated heterocyclic ring may be substituted with halogen or C1-C6 alkyl), n represents an integer of 0 to 2, T represents a hydrogen atom, halogen or C1-C6 alkyl, and R represents formula (I): or the like}.Type: GrantFiled: November 22, 2010Date of Patent: June 5, 2012Assignee: Taisho Pharmaceutical Co., LtdInventors: Toshio Nakamura, Makoto Tatsuzuki, Dai Nozawa, Tomoko Tamita, Seiji Masuda, Hiroshi Ohta, Shuhei Kashiwa, Aya Fujino, Shigeyuki Chaki, Toshiharu Shimazaki
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Patent number: 8183387Abstract: The present invention provides a prophylactic or therapeutic agent for dementia, Alzheimer's disease, attention-deficit hyperactivity disorder, schizophrenia, eating disorders, obesity, diabetes, hyperlipidemia, sleep disorders, narcolepsy, sleep apnea syndrome, circadian rhythm disorder, depression, allergic rhinitis or other diseases. A phenylpyrazole derivative represented by formula (1) or a pharmaceutically acceptable salt thereof: {wherein R1 and R2, which may be the same or different, each represent C1-C6 alkyl or C3-C8 cycloalkyl, or R1 and R2 are attached to each other together with their adjacent nitrogen atom to form a 4- to 7-membered saturated heterocyclic ring (wherein said saturated heterocyclic ring may be substituted with halogen or C1-C6 alkyl), n represents an integer of 0 to 2, T represents a hydrogen atom, halogen or C1-C6 alkyl, and R represents formula (I): or the like}.Type: GrantFiled: November 22, 2010Date of Patent: May 22, 2012Assignee: Taisho Pharmaceutical Co., LtdInventors: Toshio Nakamura, Makoto Tatsuzuki, Dai Nozawa, Tomoko Tamita, Seiji Masuda, Hiroshi Ohta, Shuhei Kashiwa, Aya Fujino, Shigeyuki Chaki, Toshiharu Shimazaki
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Publication number: 20120116095Abstract: The present invention aims to provide novel compounds represented by formula [I] or pharmaceutically acceptable salts thereof: which are useful for prevention or treatment of diseases such as schizophrenia, Alzheimer's disease, cognitive impairment, dementia, anxiety disorders (e.g., generalized anxiety disorder, panic disorder, obsessive-compulsive disorder, social anxiety disorder, post-traumatic stress disorder, specific phobias, acute stress disorder), depression, drug dependence, convulsion, tremor, pain, or sleep disorders, based on their inhibitory effect against glycine uptake.Type: ApplicationFiled: July 15, 2010Publication date: May 10, 2012Applicant: TAISHO PHARMACEUTICAL C0., LTD.Inventors: Akito Yasuhara, Kazunari Sakagami, Hiroshi Ohta, Masato Hayashi, Yoshihisa Shirasaki, Shuji Yamamoto, Youichi Shimazaki, Yuko Araki, Kumi Abe, Xiang-Min Sun
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Publication number: 20120101617Abstract: An object of the present invention is to make it possible to manufacture a photochromic lens on made-to-order basis within short time, without keeping a stack of the photochromic lens. A photochromic lens manufacturing system has an orderer side computer (101) and a manufacturer side computer (201) connected with each other through a communication line (300), and is adapted to manufacture a photochromic lens under control of the manufacturer side computer (201). The orderer side computer (101) transmits lens substrate data related to a substrate material of the lens, optical surface data related to optical surfaces of the lens, data related to the photochromic film and data related to a hard film to the manufacturer side computer (201) through the communication line (300).Type: ApplicationFiled: March 31, 2010Publication date: April 26, 2012Applicant: Hoya CorporationInventors: Hiroshi Ohta, Takeshi Imizu, Takamitsu Hirose, Toshikazu Hashimoto
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Patent number: 8159023Abstract: A semiconductor device includes a semiconductor substrate of a first conductivity type, a first semiconductor region of the first conductivity type on the semiconductor substrate, and a plurality of second semiconductor regions of a second conductivity type disposed separately in the first semiconductor region. A difference between a charge quantity expressed by an integral value of a net activated doping concentration in the second semiconductor regions in the surface direction of the semiconductor substrate and a charge quantity expressed by an integral value of a net activated doping concentration in the first semiconductor region in the surface direction of the semiconductor substrate is always a positive quantity and becomes larger from the depth of the first junction plane to a depth of a second junction plane on an opposite side from the first junction plane.Type: GrantFiled: January 22, 2010Date of Patent: April 17, 2012Assignee: Kabushiki Kaisha ToshibaInventors: Syotaro Ono, Wataru Saito, Nana Hatano, Hiroshi Ohta, Miho Watanabe
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Publication number: 20120074491Abstract: In general, according to one embodiment, a power semiconductor device includes a first pillar region, a second pillar region, and an epitaxial layer of a first conductivity type on a first semiconductor layer. The first pillar region is composed of a plurality of first pillar layers of a second conductivity type and a plurality of second pillar layers of the first conductivity type alternately arranged along a first direction. The second pillar region is adjacent to the first pillar region along the first direction and includes a third pillar layer of the second conductivity type, a fourth pillar layer of the first conductivity type, and a fifth pillar layer of the second conductivity type in this order along the first direction. A plurality of second base layers of the second conductivity type electrically connected, respectively, onto the third pillar layer and the fifth pillar layer and spaced from each other.Type: ApplicationFiled: September 16, 2011Publication date: March 29, 2012Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Hiroshi OHTA, Yasuto SUMI, Kiyoshi KIMURA, Junji SUZUKI, Hiroyuki IRIFUNE, Wataru SAITO, Syotaro ONO
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Publication number: 20120061721Abstract: A power semiconductor device includes a first semiconductor layer of a first conductivity type, a first drift layer, and a second drift layer. The first drift layer includes a first epitaxial layer of the first conductivity type, a plurality of first first-conductivity-type pillar layers, and a plurality of first second-conductivity-type pillar layers. The second drift layer is formed on the first drift layer and includes a second epitaxial layer of the first conductivity type, a plurality of second second-conductivity-type pillar layers, a plurality of second first-conductivity-type pillar layers, a plurality of third second-conductivity-type pillar layers, and a plurality of third first-conductivity-type pillar layers. The plurality of second second-conductivity-type pillar layers are connected to the first second-conductivity-type pillar layers. The plurality of second first-conductivity-type pillar layers are connected to the first first-conductivity-type pillar layers.Type: ApplicationFiled: September 9, 2011Publication date: March 15, 2012Applicant: Kabushiki Kaisha ToshibaInventors: Kiyoshi KIMURA, Yasuto SUMI, Hiroshi OHTA, Hiroyuki IRIFUNE
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Patent number: 8125023Abstract: In a vertical power semiconductor device having the super junction structure both in a device section and a terminal section, an n-type impurity layer is formed on the outer peripheral surface in the super junction structure. This allows an electric field on the outer peripheral surface of the super junction structure region to be reduced. Accordingly, a reliable vertical power semiconductor device of a high withstand voltage can be provided.Type: GrantFiled: November 17, 2009Date of Patent: February 28, 2012Assignee: Kabushiki Kaisha ToshibaInventors: Hiroshi Ohta, Wataru Saito, Syotaro Ono, Munehisa Yabuzaki, Nana Hatano, Miho Watanabe
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Publication number: 20120028982Abstract: A drug effective for the treatment and prevention of psychiatric disorders such as schizophrenia, anxiety and related ailments thereof, depression, bipolar disorder and epilepsy. The drug antagonizes the action of group II metabotropic glutamate receptors and shows high activity in oral administration. A 2-amino-bicyclo[3.1.0]hexane-2,6-dicarboxylic ester derivative represented by formula [I] [wherein R1 and R2 are identical or different, and each represents a hydrogen atom, a C1-10alkyl group or the like; X represents a hydrogen atom or a fluorine atom; Y represents —OCHR3R4 or the like (wherein R3 and R4 are identical or different, and each represents a hydrogen atom, a C1-10alkyl group or the like; and n represents integer 1 or 2)], a pharmaceutically acceptable salt thereof or a hydrate thereof.Type: ApplicationFiled: October 7, 2011Publication date: February 2, 2012Applicant: TAISHO PHARMACEUTICAL CO., LTD.Inventors: Akito YASUHARA, Kazunari Sakagami, Hiroshi Ohta, Atsuro Nakazato
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Publication number: 20120010414Abstract: The present invention aims to provide novel compounds of formula [I] or pharmaceutically acceptable salts thereof that are based on a glycine uptake inhibiting action and which are useful in the prevention or treatment of such diseases as schizophrenia, Alzheimer's disease, cognitive dysfunction, dementia, anxiety disorders (generalized anxiety disorder, panic disorder, obsessive-compulsory disorder, social anxiety disorder, posttraumatic stress disorder, specific phobia, acute stress disorder, etc.Type: ApplicationFiled: March 19, 2010Publication date: January 12, 2012Applicant: TAISHO PHARMACEUTICAL CO., LTD.Inventors: Akito Yasuhara, Shuji Yamamoto, Hiroshi Ohta, Yoshihisa Shirasaki, Kazunari Sakagami, Masato Hayashi, Tsuyoshi Shibata, Youichi Shimazaki, Yuko Araki, Kumi Abe, Xiang-Min Sun
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Publication number: 20120004232Abstract: A drug effective for the treatment and prevention of psychiatric disorders such as schizophrenia, anxiety and related ailments thereof, depression, bipolar disorder and epilepsy. The drug antagonizes the action of group II metabotropic glutamate receptors and shows high activity in oral administration A 2-amino-bicyclo[3.1.0]hexane-2,6-dicarboxylic ester derivative represented by formula [I] [wherein R1 and R2 are identical or different, and each represents a hydrogen atom, a C1-10alkyl group or the like; X represents a hydrogen atom or a fluorine atom; Y represents —OCHR3R4 or the like (wherein R3 and R4 are identical or different, and each represents a hydrogen atom, a C1-10alkyl group or the like; and n represents integer 1 or 2)], a pharmaceutically acceptable salt thereof or a hydrate thereof.Type: ApplicationFiled: September 8, 2011Publication date: January 5, 2012Applicant: TAISHO PHARMACEUTICAL CO., LTD.Inventors: Akito YASUHARA, Kazunari SAKAGAMI, Hiroshi OHTA, Atsuro NAKAZATO
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Patent number: 8076502Abstract: A drug effective for the treatment and prevention of psychiatric disorders such as schizophrenia, anxiety and related ailments thereof, depression, bipolar disorder and epilepsy. The drug antagonizes the action of group II metabotropic glutamate receptors and shows high activity in oral administration A 2-amino-bicyclo[3.1.0]hexane-2,6-dicarboxylic ester derivative represented by formula [I] [wherein R1 and R2 are identical or different, and each represents a hydrogen atom, a C1-10alkyl group or the like; X represents a hydrogen atom or a fluorine atom; Y represents —OCHR3R4 or the like (wherein R3 and R4 are identical or different, and each represents a hydrogen atom, a C1-10alkyl group or the like; and n represents integer 1 or 2)], a pharmaceutically acceptable salt thereof or a hydrate thereof.Type: GrantFiled: July 30, 2010Date of Patent: December 13, 2011Assignee: Taisho Pharmaceuticals Co., Ltd.Inventors: Akito Yasuhara, Kazunari Sakagami, Hiroshi Ohta, Atsuro Nakazato
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Publication number: 20110291181Abstract: According to one embodiment, a semiconductor device including a cell region and a terminal region includes a first semiconductor region of a first conductivity type, semiconductor pillars of the first and a second conductivity type, a second semiconductor region of the second conductivity type, and a third semiconductor region of the first conductivity type. The semiconductor pillars of the first and second conductivity type are and arranged alternately on the first semiconductor region. The second semiconductor region is provided on the semiconductor pillar of the second conductivity type. The third semiconductor region is provided on the second semiconductor region. A semiconductor pillar other than a semiconductor pillar most proximal to the terminal region is provided in a stripe configuration. The semiconductor pillar most proximal to the terminal region includes regions having a high and a low impurity concentration. The regions are provided alternately.Type: ApplicationFiled: May 31, 2011Publication date: December 1, 2011Applicant: Kabushiki Kaisha ToshibaInventors: Hiroyuki IRIFUNE, Yasuto Sumi, Kiyoshi Kimura, Hiroshi Ohta
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Publication number: 20110262636Abstract: The present invention relates to a method of manufacturing a plastic lens comprising forming a resin layer on a surface of a plastic lens substrate. The method of manufacturing a plastic lens of the present invention comprises coating a water-based coating liquid comprising a resin component and a water-based solvent by discharging the water-based coating liquid from a tip of a nozzle onto the surface of the plastic lens substrate being rotated with the surface facing upward, so that a spiral coating path is traced from a perimeter portion to a center portion of the surface as well as so that adjacent coating paths in a radial direction of the surface contact or overlap each other, and forming the resin layer by rotating the plastic lens substrate after the coating with the surface on which the coating liquid has been coated facing upward to remove at least a portion of the water-based solvent comprised in the coating liquid.Type: ApplicationFiled: August 19, 2008Publication date: October 27, 2011Applicant: HOYA CORPORATIONInventors: Hiroshi Ohta, Toshikazu Hashimoto, Takeshi Imizu