Abstract: A heat pipe comprises a housing that has a heating section that is made of metal and is contacted by a heating element, a cooling section that is made of metal and is cooled by a cooling element, and a plurality of refrigerant flow channels formed inside the housing from the heating section to the cooling section; refrigerant that is enclosed inside the plurality of refrigerant flow channels; and heat-insulating layers that are disposed between the plurality of refrigerant flow channels located at least at the heating section in the housing.

Abstract: A cooling device including a heat absorbing unit, provided with an inflow port of a coolant medium and a discharge port for discharging the coolant medium, sealing the coolant medium in parts other than the inflow port and the discharge port, wherein the heat absorbing unit includes an upper member having an installation surface where semiconductor elements serving as an object to be cooled are installed and a cooling surface serving as a back surface of installation surface, and a lower member forming a chamber having cooling surface as a part of a inner wall surface together with upper member. Injection ports communicating with inflow port for injecting the coolant medium toward cooling surface are provided and the discharge port is provided at a position lower than opening positions of injection ports in lower member.

Abstract: A semiconductor element cooling structure includes a plurality of semiconductor elements, and electrode structure, which has cooling medium channels therein and is electrically connected to the plurality of semiconductor elements. The electrode structure includes an alternating current electrode having the semiconductor elements on each of opposite surfaces, and a plurality of direct current electrodes holding therebetween the alternating current electrode and the semiconductor elements respectively mounted on the opposite surfaces of the alternating current electrode. Each of the alternating current electrode and the direct current electrodes has the cooling medium channels therein.

Abstract: The temperature of an object is controlled by a feedback control algorithm based on the temperature control characteristics of a homeothermic plant.

Abstract: A semiconductor element cooling structure includes first and second semiconductor elements; a heat sink having a mounting surface on which the semiconductor elements are mounted and a cooling medium channel formed inside, through which a cooling medium for cooling the semiconductor elements flows; and a protruded portion provided at a position opposite to the mounting surface of the heat sink, extending in a direction intersecting flow direction of the cooling medium (direction of arrow DR1) and protruding from a bottom surface of the cooling medium channel to the inside of cooling medium channel. The semiconductor elements are arranged side by side in the direction of arrow DR1, such that the first semiconductor element is positioned upstream side than the second semiconductor element.

Abstract: A junction body has a first member and a second member each of which is provided with a joining surface whose main component is copper. A solder member containing, in a tin-base solder material, a three-dimensional web structure whose main component is copper is provided between the first member and the second member. A copper-tin alloy whose average thickness is 2 ?m or more but 20 ?m or less is provided between the joining surfaces and the three-dimensional web structure.

Abstract: A power module includes a semiconductor device having a first and second arms, and gate driving circuit board. The first arm includes a first extending electrode, a first gate electrode of a first power device extending in a direction different from the first extending electrode, and a first output electrode extending in the different direction from the first gate electrode. The second arm stacked on the first arm includes a second extending electrode extending in the first extending electrode extending direction in an insulating state, a second gate electrode of a second power device, extending in the first gate electrode extending direction, and a second output electrode extending in the first output electrode extending direction with electrical connection thereto. The gate driving circuit board is disposed at the first and second gate electrodes extending side so as to face the semiconductor device.

Abstract: A semiconductor apparatus 10 includes a radiator 30 on which plural semiconductor modules 20 that include semiconductor elements 21 are mounted, the semiconductor apparatus 10 characterized by the radiator 30 including a first main surface 30B and a second main surface 30C configured to be located on the opposite side of the first main surface 30B. Semiconductor module mount-surfaces 30B1, 30B2, 30C1, 30C2 are arranged in the first main surface 30B and the second main surface 30C in a zigzag pattern in cross-sectional view; and the semiconductor modules 20 are mounted onto some or all of the semiconductor module mount-surfaces 30B1, 30B2, 30C1, 30C2.

Abstract: A semiconductor element cooling structure includes a semiconductor element, a heat sink on which the semiconductor element is mounted, and a heat storage member attached to the semiconductor element in a manner to be located opposite to the heat sink with respect to the semiconductor element and having a case and a latent heat storage material.

Abstract: A power module includes a pair of power devices that are stacked with a plate-shaped output electrode arranged therebetween, and an N-electrode and a P-electrode that are stacked with the pair of power devices arranged therebetween. The output electrode is anisotropic such that the thermal conductivity in a direction orthogonal to the stacking direction is greater than the thermal conductivity in the stacking direction. Also, the output electrode extends in the orthogonal direction from a stacked area where the pair of power devices are stacked. The N-electrode and the P-electrode extend in the orthogonal direction while maintaining an opposing positional relationship.

Abstract: A semiconductor element cooling structure includes a plurality of semiconductor elements, and electrode structure, which has cooling medium channels therein and is electrically connected to the plurality of semiconductor elements. The electrode structure includes an alternating current electrode having the semiconductor elements on each of opposite surfaces, and a plurality of direct current electrodes holding therebetween the alternating current electrode and the semiconductor elements respectively mounted on the opposite surfaces of the alternating current electrode. Each of the alternating current electrode and the direct current electrodes has the cooling medium channels therein.

Abstract: A cooling device includes a case including a mount surface having a power transistor mounted thereon, a coolant accommodating chamber formed in the case located above the mount surface, for accommodating a coolant capable of evaporating by heat from the power transistor, a cooling pipe provided in the case and being capable of cooling the coolant in a gaseous state, and a defining member provided in the coolant accommodating chamber and being capable of defining in the coolant accommodating chamber a first region capable of guiding the coolant in a gaseous state evaporated by the heat from the power transistor toward the cooling pipe, and a second region located downstream in a flow direction of the coolant with respect to the first region and being capable of guiding the coolant cooled by the cooling pipe toward a bottom of the coolant accommodating chamber.

Abstract: A Peltier element is provided so that an electrically conductive plate forming a heat absorbing portion is in close proximity to an insulating layer and an electrically conductive plate forming a heat radiating portion is provided in close proximity to an insulating layer. The Peltier element has one end connected to a branch line branched from a power line, and has the other end electrically connected to an electrode plate. Further, the Peltier element receives from the branch line a portion of electric power supplied to a power transistor, and outputs it to the electrode plate. In other words, the Peltier element uses the portion of the electric power supplied to the power transistor, to absorb heat generated by the power transistor and radiate it toward a heat radiating plate.

Abstract: A semiconductor element cooling structure includes first and second semiconductor elements; a heat sink having a mounting surface on which the semiconductor elements are mounted and a cooling medium channel formed inside, through which a cooling medium for cooling the semiconductor elements flows; and a protruded portion provided at a position opposite to the mounting surface of the heat sink, extending in a direction intersecting flow direction of the cooling medium (direction of arrow DR1) and protruding from a bottom surface of the cooling medium channel to the inside of cooling medium channel. The semiconductor elements are arranged side by side in the direction of arrow DR1, such that the first semiconductor element is positioned upstream side than the second semiconductor element.

Abstract: There is provided an electronic component which comprises an insulating member on which an electronic element is mounted, and a thermal diffusion member on which the insulating member is mounted, wherein a thermal expansion coefficient of the insulating member is lower than a thermal expansion coefficient of the thermal diffusion member, and the insulating member is mounted in an embedded manner in a recess formed on a surface of the thermal diffusion member.

Abstract: A heat sink includes a plurality of fins. The fins are formed to serve as partition walls of flow paths of a coolant. The fins are formed such that the coolant flows along a surface thereof. A merge space is formed to allow the coolant in the flow paths separated by the fins to merge. The merge space is formed in the flow paths formed by the fins.

Abstract: The present invention is a cooling device including a heat absorbing unit, provided with an inflow port of a coolant medium and a discharge port for discharging the coolant medium, sealing the coolant medium in parts other than the inflow port and the discharge port, wherein the heat absorbing unit includes an upper member having an installation surface where semiconductor elements serving as an object to be cooled are installed and a cooling surface serving as a back surface of installation surface, and a lower member forming a chamber having cooling surface as a part of an inner wall surface together with upper member. Injection ports communicating with inflow port for injecting the coolant medium toward cooling surface are provided and the discharge port is provided at a position lower than opening positions of injection ports in lower member. Thereby, it is possible to provide a cooling device of improving cooling efficiency and reducing cooling unevenness.

Abstract: A cooler is provided with a thermal transmission member having a surface to be sprayed with a cooling fluid. The heat transmission member includes a first groove formed on the surface, and a second groove intersecting with the first groove and being formed on the surface.

Abstract: A cooler includes a substrate for disposing a semiconductor device thereon, a plate member fixed to a back surface of the substrate, a primary pipe, and a secondary pipe. A space sandwiched between the substrate and the primary pipe defines a first flow path for a coolant. The primary pipe and the secondary pipe configure a second flow path for a coolant. The secondary pipe is positioned to jet a coolant toward a region opposite to that having the semiconductor device disposed therein. The second flow path is separated from the first flow path.

Abstract: The temperature of a predetermined object is controlled by feedback control that uses the temperature control algorithm of a homeothermic plant.