Abstract: A chemical mechanical polishing pad. The pad contains a water-insoluble matrix and Water-soluble particles dispersed in the water-insoluble matrix material and has a polishing surface and a non-polishing surface on a side opposite to the polishing surface. The pad has a light transmitting area which optically communicates from the polishing surface to the non-polishing surface. The non-polishing surface of the light transmitting area has a surface roughness (Ra) of 10 pm or less.

Abstract: A silane composition for preparing a semiconductor thin films of a solar cell is disclosed. The silane composition contains a polysilane compound represented by the formula SinRm (n is an integer of 3 or more, m is an integer of n to (2n+2) and an m number of R's are each independently a hydrogen atom, alkyl group, phenyl group or halogen atom, with the proviso that when all the m number of R's are hydrogen atoms and m=2n, n is an integer of 7 or more), and at least one silane compound selected from cyclopentasilane, cyclohexasilane and silylcyclopentasilane.

Abstract: A silane composition for preparing a semiconductor thin films of a solar cell is disclosed. The silane composition contains a polysilane compound represented by the formula SinRm (n is an integer of 3 or more, m is an integer of n to (2n+2) and an m number of R's are each independently a hydrogen atom, alkyl group, phenyl group or halogen atom, with the proviso that when all the m number of R's are hydrogen atoms and m=2n, n is an integer of 7 or more), and at least one silane compound selected from cyclopentasilane, cyclohexasilane and silylcyclopentasilane.

Abstract: A silane composition for preparing a semiconductor thin films of a solar cell is disclosed. The silane composition contains a polysilane compound represented by the formula SinRm (n is an integer of 3 or more, m is an integer of n to (2n+2) and an m number of R's are each independently a hydrogen atom, alkyl group, phenyl group or halogen atom, with the proviso that when all the m number of R's are hydrogen atoms and m=2n, n is an integer of 7 or more), and at least one silane compound selected from cyclopentasilane, cyclohexasilane and silylcyclopentasilane.

Abstract: An objective of the present invention is to provide a polishing pad for a semiconductor wafer and a laminated body for polishing of a semiconductor wafer equipped with the same which can perform optical endpoint detection without lowering the polishing performance as well as methods for polishing of a semiconductor wafer using them. The polishing pad of the present invention comprises a substrate 11 for a polishing pad provided with a through hole penetrating from surface to back, a light transmitting part 12 fitted in the through hole, the light transmitting part comprises a water-insoluble matrix material (1,2-polybutadiene) and a water-soluble particle (?-cyclodextrin) dispersed in the water-insoluble matrix material, and the water-soluble particle is less than 5% by volume based on 100% by volume of the total amount of the water-insoluble matrix material and the water-soluble particle.

Abstract: A chemical mechanical polishing pad which has a storage elastic modulus E? (30° C.) at 30° C. of 120 MPa or less and an (E? (30° C.)/E? (60° C.)) ratio of the storage elastic modulus E? (30° C.) at 30° C. to the storage elastic modulus E? (60° C.) at 60° C. of 2.5 or more when the storage elastic moduli of a polishing substrate at 30° C. and 60° C. are measured under the following conditions: initial load: 100 g maximum bias: 0.01 % frequency: 0.2 Hz. A chemical mechanical polishing process makes use of the above chemical mechanical polishing pad. The chemical mechanical polishing pad can suppress the production of a scratch on the polished surface in the chemical mechanical polishing step and can provide a high-quality polished surface, and the chemical mechanical polishing process provides a high-quality polished surface by using the chemical mechanical polishing pad.

Abstract: A polishing pad of the present invention contains a water-insoluble matrix material comprising a crosslinked polymer such as a crosslinked 1,2-polybutadiene and water-soluble particles dispersed in the material, such as saccharides. The solubility of the water-soluble particles in water is 0.1 to 10 wt % at 25° C., and the amount of water-soluble particles eluted from the pad when the pad is immersed in water is 0.05 to 50 wt % at 25° C. Further, in the polishing pad of the present invention, the solubility of the water-soluble particles in water is 0.1 to 10 wt % at 25° C. at a pH of 3 to 11, and solubility thereof in water at 25° C. at a pH of 3 to 11 is within ±50% of solubility thereof in water at 25° C. at a pH of 7. In addition, the water-soluble particles contain an amino group, an epoxy group, an isocyanurate group, and the like. This polishing pad has good slurry retainability even if using slurries different in pH and also has excellent polishing properties such as a polishing rate and planarity.

Abstract: A polishing pad comprising a recessed portion in the non-polishing surface. This polishing pad can prevent the surface to be polished of an object from being scratched.

Abstract: A chemical mechanical polishing pad having a polishing surface, a non-polishing surface opposite to the polishing surface and a side surface for defining these surfaces, the polishing surface having (i) a first group of grooves which intersect a single virtual straight line extending from the center toward the peripheral portion of the polishing surface and do not cross one another, or a single first spiral groove which expands gradually from the center portion toward the peripheral portion of the polishing surface, and (ii) a second group of grooves which extend from the center portion toward the peripheral portion of the polishing surface, intersect the first group of grooves or the first spiral groove and do not cross one another. Since this chemical mechanical polishing pad fully suppresses the occurrence of a scratch on the polished surface and has an excellent polishing rate, it is advantageously used in a chemical mechanical polishing method.

Abstract: There is provided a chemical mechanical polishing pad containing a polishing substrate having a polishing surface and a light-transmitting member fused to the polishing substrate. The sectional form of the light-transmitting member when it is cut with a plane parallel to the polishing surface is elliptic with a value obtained by dividing its long diameter by its short diameter of more than 1. The pad is capable of transmitting end-point detection light without reducing its polishing efficiency in polishing a semiconductor wafer.

Abstract: A chemical mechanical polishing pad having a polishing surface with an arithmetic mean roughness (Ra) of 0.1 to 15 ?m, a 10-point height (Rz) of 40 to 150 ?m, a core roughness depth (Rk) of 12 to 50 ?m and a reduced peak height (Rpk) of 7 to 40 ?m, a manufacturing process thereof and a chemical mechanical polishing method. Even when the chemical mechanical polishing of a large-diameter wafer as an object to be polished is carried out by this pad, a polished surface having excellent in-plane uniformity and flatness can be formed.

Abstract: An aqueous dispersion obtained by hydrolysis/condensation and radical polymerization of a mixture containing (A) at least one selected from an organosilane, a hydrolyzate of the organosilane and a condensate of the organosilane, and (B) a radical polymerizable vinyl monomer, in an emulsified state.

Abstract: A chemical mechanical polishing pad comprising a water-insoluble matrix which comprises (A) a styrene polymer and (B) a diene polymer. A method for producing the above chemical mechanical polishing pad, the method comprising the steps of preparing a composition comprising (A) a styrene polymer, (B) a diene polymer and (C) a crosslinking agent, shaping the above composition into a predetermined shape, and heating the composition during or after shaping to cure it. A chemical mechanical polishing process which comprises polishing a surface to be polished of an object to be polished by use of the chemical mechanical polishing pad. According to the present invention, it is possible to provide a chemical mechanical polishing pad which can be suitably applied to polishing of metal film and insulation film, particularly to an STI technique, provides a flat polished surface, can provide a high polishing rate and has a satisfactory useful life.

Abstract: A chemical mechanical polishing pad having a face for polishing an object to be polished, a non-polishing face opposite to the face and a side face for interconnecting these faces and including the pattern of recessed portions which are formed on the non-polishing face and are open to the non-polishing face and not to the side face.

Abstract: A composition capable of forming a metal ruthenium film and a ruthenium oxide film by a simple application/baking process, a process for forming a metal ruthenium film and a ruthenium oxide film from the composition, a metal ruthenium film and a ruthenium oxide film formed by the process, and electrodes formed of the films. A solution composition comprising a specific ruthenium complex. The coating film of this solution composition is heated in an atmosphere containing no oxygen or an atmosphere containing oxygen to form a metal ruthenium film or a ruthenium oxide film, respectively, and electrodes formed of the films.

Abstract: A chemical mechanical polishing pad. The pad contains a water-insoluble matrix and water-soluble particles dispersed in the water-insoluble matrix material and has a polishing surface and a non-polishing surface on a side opposite to the polishing surface. The pad has a light transmitting area which optically communicates from the polishing surface to the non-polishing surface. The non-polishing surface of the light transmitting area has a surface roughness (Ra) of 10 ?m or less.

Abstract: A polishing pad comprising a recessed portion in the non-polishing surface. This polishing pad can prevent the surface to be polished of an object from being scratched.

Abstract: A processing method of a polishing pad for semiconductor wafer capable of forming a groove, a concave portion, a through hole and the like having a small surface roughness of the inner surface of the groove and the like of 20 &mgr;m or less, a high dimensional accuracy and a uniform cross-sectional shape, and a polishing pad for semiconductor wafer. In the processing method, a surface of a polishing pad including a water-insoluble matrix containing a crosslinked polymer and a water-soluble particle dispersed in the water-insoluble matrix is processed by cutting and the like. Additionally, when a groove and the like are formed, it is preferable that a polishing pad is placed on one surface side of a machining table having a sucking hole, the pad is fixed on the one surface side of the machining table by vacuuming sucking it from the other surface of the machining table, and then a groove and the like are formed.

Abstract: A polishing pad for chemical mechanical polishing, which has an excellent removal rate and is capable of polishing for providing excellent planarity. This polishing pad comprises 70 to 99.9 mass % of (A) a crosslinked diene elastomer and 0.1 to 30 mass % of (B) a polymer having an acid anhydride structure based on 100 mass % of the total of the above components (A) and (B) and has a specific gravity of 0.9 to 1.2.

Abstract: A polishing pad, a polishing laminated pad and a semiconductor wafer polishing method all of which prevent a leak of slurry from the gap between a polishing substrate and a reduction in polishing efficiency caused by a scratched and a window member and enable the optical detection of the polishing end point to be carried out efficiently.

Abstract: A method of producing prepolymeric materials from lignin is disclosed. The method uses lignin which has been hydroxyalkyl modified, such that the lignin is substantially non-phenolic and solvent soluble and/or liquid. The modified lignin is reacted with materials which yield prepolymers which may be polymerized according to known methods to produce useful polymers.