Abstract: A composition for forming a high-quality tantalum film which is advantageously used as an capacitor insulating film and a process for forming the high-quality tantalum film. The composition for forming a tantalum oxide film, which comprises at least one tantalum compound selected from the group consisting of a reaction product of a compound capable of reacting with a tantalum alkoxide and a tantalum alkoxide and a hydrolyzate of the reaction product, and a solvent, and the process for forming the tantalum oxide film by applying this composition to a substrate and heating it.

Abstract: An abrasive pad capable of transmitting light for end point detection without reducing polishing efficiency in the polishing of a semiconductor wafer using an optical end-point detection device, method of manufacturing the abrasive pad, a metal mold for manufacturing the abrasive pad, and a method of polishing a semiconductor wafer.

Abstract: A polishing pad of the present invention contains a water-insoluble matrix material comprising a crosslinked polymer such as a crosslinked 1,2-polybutadiene and water-soluble particles dispersed in the material, such as saccharides. The solubility of the water-soluble particles in water is 0.1 to 10 wt % at 25° C., and the amount of water-soluble particles eluted from the pad when the pad is immersed in water is 0.05 to 50 wt % at 25° C. Further, in the polishing pad of the present invention, the solubility of the water-soluble particles in water is 0.1 to 10 wt % at 25° C. at a pH of 3 to 11, and solubility thereof in water at 25° C. at a pH of 3 to 11 is within ±50% of solubility thereof in water at 25° C. at a pH of 7. In addition, the water-soluble particles contain an amino group, an epoxy group, an isocyanurate group, and the like.

Abstract: The present invention intends to provide a polishing pad and a multi-layer polishing pad that can particularly effectively suppress scratch from occurring. The polishing pad of the invention comprises at least one part selected from a groove (a) having at least one kind of shape selected from annular, lattice-like and spiral form on a polishing surface side, a concave portion (b) and a through hole (c). In the above, surface roughness of an inner surface of the part is 20 &mgr;m or less and the polishing pad is used for chemical mechanical polishing.

Abstract: Disclosed are a coating composition comprising a polymer dispersed in an aqueous medium, the polymer containing (a) a hydrolysate of an organosilane and/or a condensation product thereof and (b) a vinyl polymer containing a silyl group having a silicon atom bound to a hydrolytic group and/or a hydroxyl group, and further comprising (c) an oxazoline derivative as a crosslinking agent and a hardened film obtained therefrom. The above coating composition completes the hardening reaction of a coating film at low temperature for a short period of time, high in hardness immediately after hardening, and having water resistance, weather resistance, organic chemical resistance, acid resistance, alkali resistance, wear resistance and durable adhesion.

Abstract: A gas barrier coating composition which undergoes no decrease in barrier properties to gases such as oxygen and water vapor even under high-humidity conditions, contains no compounds thought to be harmful to the human body, and is harmless to the human body; and a gas barrier coating film with excellent gas barrier properties comprising the composition. The gas barrier coating composition comprises (a) a polyvinyl alcohol resin and (b) at least one member selected from the group consisting of a specific metal alcoholate, a hydrolysate of the metal alcoholate, a condensate of the metal alcoholate, a chelate compound of the metal alcoholate, a hydrolysate of the chelate compound and an acylated metal compound. The coating film obtained from the composition has excellent gas barrier properties.

Abstract: A gas barrier coating composition comprising (a) a polyvinyl alcohol resin, (b) a metal alcoholate of the formula R1mM(OR2)n (wherein M Ti, Zr, or Al, R1 is C1-8 organic group, R2 is C1-5 alkyl, C1-6 acyl, or phenyl, and m and n are 0 or more, with m+n representing the valence of M), a hydrolyzate, condensate, or chelate compound of the metal alcoholate, a hydrolyzate or condensate of the metal chelate compound, a metal acylate of the of the formula R1mM(OR2)n, a hydrolyzate or condensate of the metal acylate, and (c) an organosilane of the formula R3pSi(OR4)4−p (wherein R3is C1-8 organic group, R4 is C1-5 alkyl, C1-6 acyl, or phenyl, and p is 0-2), a hydrolyzate or condensate of the organosilane.

Abstract: A silane composition for preparing a semiconductor thin films of a solar cell is disclosed. The silane composition contains a polysilane compound represented by the formula SinRm (n is an integer of 3 or more, m is an integer of n to (2n+2) and an m number of R's are each independently a hydrogen atom, alkyl group, phenyl group or halogen atom, with the proviso that when all the m number of R's are hydrogen atoms and m=2n, n is an integer of 7 or more), and at least one silane compound selected from cyclopentasilane, cyclohexasilane and silylcyclopentasilane.

Abstract: An aqueous dispersion obtained by hydrolysis/condensation and radical polymerization of a mixture containing (A) at least one selected from an organosilane, a hydrolyzate of the organosilane and a condensate of the organosilane, and (B) a radical polymerizable vinyl monomer, in an emulsified state.

Abstract: A method of forming a water soluble polymer comprises polymerizing a non-fluorinated monomer in a reaction medium comprising carbon dioxide to form a water soluble polymer, wherein the polymerization is carried out in the presence of a surfactant that stabilizes the water soluble polymer in the reaction medium.

Abstract: A composition capable of forming a metal ruthenium film and a ruthenium oxide film by a simple application/baking process, a process for forming a metal ruthenium film and a ruthenium oxide film from the composition, a metal ruthenium film and a ruthenium oxide film formed by the process, and electrodes formed of the films.

Abstract: A composition for forming a high-quality tantalum film which is advantageously used as an capacitor insulating film and a process for forming the high-quality tantalum film. The composition for forming a tantalum oxide film, which comprises at least one tantalum compound selected from the group consisting of a reaction product of a compound capable of reacting with a tantalum alkoxide and a tantalum alkoxide and a hydrolyzate of the reaction product, and a solvent, and the process for forming the tantalum oxide film by applying this composition to a substrate and heating it.

Abstract: A coated film and a coated glass improved in the resistance to fouling derived from water and oil repellency, and in the durability, the abrasion resistance, and the exfoliation of stacked outer layer, are provided by a specific coating composition having at least one component (a) selected from organosilanes, hydrolyzates of the organosilanes, and condensates of the organosilanes, and component (b) containing a silyl group wherein one of silicon atoms bonded with a hydrolytic group and/or a hydroxy group.