Abstract: A glass film transfer apparatus includes a wind-off section that winds off the glass film from a roll around which the glass film is wound, a long interleaf being laminated on the glass film; a glass film transfer section that transfers the glass film which is wound off from the wind-off section and is separated from the interleaf; a take-up section that takes up the glass film transferred by the glass film transfer section in the form of roll, while laminating the long interleaf on the glass film; and an interleaf transfer section that carries out the interleaf separated from the glass film which is wound off from the wind-off section, and carries in the interleaf toward the take-up section. Furthermore, the glass film transfer apparatus includes a take-up adjusting mechanism that adjusts a take-up state of the interleaf and the glass film in the take-up section.

Abstract: The present invention is to provide a deposition device capable of coping with a size change of a substrate only by replacing a magnet unit and a target material. A deposition device (1) of the present invention is to perform deposition onto a surface of a substrate W to be conveyed by using an evaporation source (2) facing a front surface of the substrate (W), and the evaporation source (2) has a target material (7), a backing plate (8), a magnet unit (9), a cathode body (10), and a cooling water flow passage (12). The cooling water flow passage (12) is a space formed by separating the magnet unit (9) and the backing plate (8), and the cooling water can be distributed through this space. As the magnet unit (9), a short magnet unit can be arranged in correspondence with a narrow-width substrate having narrower width than that of the substrate (W), and as the target material (7), a short target material is arranged in correspondence with width of the arrange magnet unit (9).

Abstract: In a sputter device (1), power of a DC power source (20) is sequentially distributed and supplied in a time division pulse state to a plurality of sputter evaporation sources (4). A power source (10) provided to each of the sputter evaporation sources (4) supplies continuous power to each of the sputter evaporation sources (4). The sputter device (1) having the configuration requires no DC pulse power source to be provided to each of the sputter evaporation sources (4), which reduces the device cost.

Abstract: A plasma CVD apparatus capable of preventing unnecessary deposition on a supplying portion of a source gas so as to suppress generation of flakes, and thereby depositing a CVD coating excellent in quality is provided. This plasma CVD apparatus includes a vacuum chamber, a vacuum pump system for vacuuming an interior of the vacuum chamber, a deposition roller around which a substrate is wound, the deposition roller being provided in the vacuum chamber, a gas supplying portion for supplying the source gas to the interior of the vacuum chamber, and a plasma power supply for forming a plasma generating region in the vicinity of a surface of the deposition roller and thereby depositing a coating on the substrate. The gas supplying portion is provided in a plasma non-generating region positioned on the opposite side of the plasma generating region with respect to the deposition roller.

Abstract: Provided is a substrate transport roller (2a) capable of ensuring a broad temperature-control region on a substrate, without reducing substrate transport quality.

Abstract: The present invention is to provide a deposition device capable of coping with a size change of a substrate only by replacing a magnet unit and a target material. A deposition device (1) of the present invention is to perform deposition onto a surface of a substrate W to be conveyed by using an evaporation source (2) facing a front surface of the substrate (W), and the evaporation source (2) has a target material (7), a backing plate (8), a magnet unit (9), a cathode body (10), and a cooling water flow passage (12). The cooling water flow passage (12) is a space formed by separating the magnet unit (9) and the backing plate (8), and the cooling water can be distributed through this space. As the magnet unit (9), a short magnet unit can be arranged in correspondence with a narrow-width substrate having narrower width than that of the substrate (W), and as the target material (7), a short target material is arranged in correspondence with width of the arrange magnet unit (9).

Abstract: In forming alumina films on substrates by sputtering of an aluminum metal target in an oxidizing gas-containing atmosphere, film formation is carried out intermittently in a plurality of substeps while restricting a thickness of the film formed in each substep to at most 5 nm. A turntable is disposed to face a direction of sputtering of the aluminum metal target and the substrates are fixed to the turntable.

Abstract: Provided is an in-line plasma CVD apparatus (100) capable of performing a deposition process at a high production efficiency while maintaining stable deposition conditions, without spending time and energy on cleaning and the like even when in use for a long time. This plasma CVD apparatus (100) is equipped with a deposition chamber (1) and load-lock chambers (20, 30) which are separate from the deposition chamber (1). The apparatus (100) is of the in-line-type for conveying a substrate between these chambers and producing a film on the substrate. The deposition chamber (1) is equipped with a vacuum chamber (2), a vacuum exhaust means (3) for discharging the air inside the vacuum chamber (2), a gas supply unit (9) for supplying a source gas into the vacuum chamber (2), and a plasma generation power supply (10) for generating plasma inside the vacuum chamber (2).

Abstract: The disclosed plasma CVD apparatus (1) is provided with a vacuum chamber (3); a pair of deposition rollers (2, 2) disposed within the vacuum chamber (3) that are connected to both poles of an AC power supply and around which a substrate (W) is wound; a gas-supplying device (5) that supplies process gas containing a source gas to a deposition zone (D) which is a portion of or all of the region that is on one side of a line linking the centers of rotation of the pair of deposition rollers (2, 2); and a magnetic-field-generating device (7) that, by means of the AC power supply being applied to each of the deposition rollers (2, 2), forms a magnetic field that causes the source gas in a predetermined region to become plasma. The magnetic-field-generating device (7) causes the source gas in the region adjacent to the surface of the portion of the pair of deposition rollers (2, 2) located within the deposition zone (D) to become plasma, forming a plasma region (P).

Abstract: A glass film transfer apparatus includes a wind-off section that winds off the glass film from a roll around which the glass film is wound, a long interleaf being laminated on the glass film; a glass film transfer section that transfers the glass film which is wound off from the wind-off section and is separated from the interleaf; a take-up section that takes up the glass film transferred by the glass film transfer section in the form of roll, while laminating the long interleaf on the glass film; and an interleaf transfer section that carries out the interleaf separated from the glass film which is wound off from the wind-off section, and carries in the interleaf toward the take-up section. Furthermore, the glass film transfer apparatus includes a take-up adjusting mechanism that adjusts a take-up state of the interleaf and the glass film in the take-up section.

Abstract: Provided is a substrate transport roller (2a) capable of ensuring a broad temperature-control region on a substrate, without reducing substrate transport quality.

Abstract: Provided is an apparatus capable of preventing the intrusion of particles into spaces in a web substrate roll. The apparatus forms web substrate rolls by continuously winding a long web substrate (21), on which edge tabs (14) have been installed, in a chamber (5) under vacuum or under reduced pressure, and is provided with: a winding section (4) for winding the web substrate (21) and overlaying the edge tabs (14); and a filler-supplying section for adding a filler (20) between portions of the web substrate (21) that are adjacent to each other in the radial direction and are between the two edge tabs (14) by supplying the filler (20) to the web substrate (21) that is being wound on the winding section (4).

Abstract: A glass film conveying device in which a glass film is properly cooled to suppress breakage when the glass film is placed on a protective film and taken up is provided. A glass film conveying device (100) that continuously conveys a long glass film includes a feeding unit (2) that feeds a glass film from a roll, a glass film conveying unit (3) that conveys the glass film fed from the feeding unit (2), a take-up unit (4) that takes up the glass film conveyed by the glass film conveying unit (3) in a roll shape while laminating the glass film and a protective film R2, and a laminating roller (12) provided in front of the take-up unit (4). A surface temperature of the laminating roller (12) is higher than a temperature of the protective film. The temperature of the protective film is increased, so that evaporation of a volatile component contained in the protective film is promoted.

Abstract: A plasma CVD apparatus of the present invention includes: a vacuum chamber; a vacuum exhaust unit that evacuates the vacuum chamber so that the inside becomes a vacuum state; a gas supply unit that supplies a source gas into the vacuum chamber; a plasma generation power supply that generates plasma in the source gas supplied into the vacuum chamber; a plurality of rotation holding units that hold the substrates in a spinning state; and a plurality of revolution mechanisms that revolve the plurality of rotation holding units around a revolution axis parallel to a shaft center and rotation axes of the rotation holding units, wherein the respective revolution mechanisms are divided as any one of a first group connected to one electrode of the plasma generation power supply and a second group connected to the other electrode of the plasma generation power supply.

Abstract: A plasma source that is uniformly and efficiently cooled, a vacuum plasma processing apparatus including the plasma source, and a plasma source cooling method are provided. The vacuum plasma processing apparatus includes a vacuum chamber of which the inside is evacuated to a vacuum state and a plasma source which is provided inside the vacuum chamber. The plasma source includes a plasma generation electrode that generates plasma inside the vacuum chamber and a reduced pressure space forming member that forms a reduced pressure space accommodating a liquid cooling medium and depressurizing at the back surface of the plasma generation electrode, and the plasma generation electrode is cooled by the evaporation heat generated when the cooling medium is evaporated by a depressurization.

Abstract: Provided is a continuous deposition apparatus wherein replacement operations of a feeding unit and a take-up unit are easily performed. The continuous deposition apparatus is provided with: a vacuum chamber (1); a deposition roller (2); evaporation sources (7L1, 7L2, 7R) which supply a deposition material to a film substrate from the side of the film substrate which is wound on the deposition roller and on which a coating is to be deposited; a feeding unit (3) which supplies the film substrate to the deposition roller (2); and a take-up unit (4) which takes up the film substrate after the coating is deposited thereon.

Abstract: Provided is a vacuum coating apparatus that deposits a coating on a substrate, the vacuum coating apparatus including: a vacuum chamber; a vacuum exhaust unit that performs a vacuum exhaust operation inside the vacuum chamber; a plurality of rotation holding units that hold the substrate as a coating subject in a rotating state; and a revolution mechanism that revolves the plurality of rotation holding units about a revolution axis parallel to the rotation axes of the respective rotation holding units; in which the plurality of rotation holding units are divided into a plurality of groups so that power is supplied to the respective rotation holding units in a manner that the rotation holding units of the respective groups have different potentials.

Abstract: A plasma CVD apparatus according to the present invention is provided with: a vacuum chamber 4; a pair of deposition rollers 2, 2, each of which is disposed in the vacuum chamber 4, and has a substrate W wound thereon, the substrate on which a coating is deposited; and magnetic field generating sections 8, 15, each of which forms a deposition area where the coating is deposited on the substrate W wound on each deposition roller 2 by generating a magnetic field that generates plasma on the surface of each deposition roller 2. The pair of deposition rollers 2, 2 are composed of a first deposition roller 2, and a second deposition roller 2, which is disposed at an interval from the first deposition roller 2 such that the shaft core of the second deposition roller is parallel to that of the first deposition roller 2.

Abstract: A plasma CVD apparatus capable of preventing unnecessary deposition on a supplying portion of a source gas so as to suppress generation of flakes, and thereby depositing a CVD coating excellent in quality is provided. This plasma CVD apparatus includes a vacuum chamber, a vacuum pump system for vacuuming an interior of the vacuum chamber, a deposition roller around which a substrate is wound, the deposition roller being provided in the vacuum chamber, a gas supplying portion for supplying the source gas to the interior of the vacuum chamber, and a plasma power supply for forming a plasma generating region in the vicinity of a surface of the deposition roller and thereby depositing a coating on the substrate. The gas supplying portion is provided in a plasma non-generating region positioned on the opposite side of the plasma generating region with respect to the deposition roller.

Abstract: The present invention provides a process for producing an alumina coating comprised mainly of ? crystal structure on a base material.