Patents by Inventor Hiroshi Tayanaka

Hiroshi Tayanaka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210058573
    Abstract: Methods and apparatus for image processing. The method comprises generating a first image having a first resolution, searching, by processing circuitry, the first image to determine whether a target object can be identified in the first image, specifying, when it is determined that the target object can be identified in the first image, a region-of-interest in the first image, generating, when it is determined that the target object cannot be identified in the first image, a second image having a second resolution higher than the first resolution, searching, by the processing circuitry, the second image to determine whether the target object can be identified in the second image, and specifying, when it is determined that the target object can be identified in the second image, a region-of-interest in the second image.
    Type: Application
    Filed: September 11, 2020
    Publication date: February 25, 2021
    Applicant: Sony Semiconductor Solutions Corporation
    Inventors: Tomohiro Takahashi, Hiroshi Tayanaka
  • Patent number: 10812739
    Abstract: Methods and apparatus for image processing. The method comprises generating a first image having a first resolution, searching, by processing circuitry, the first image to determine whether a target object can be identified in the first image, specifying, when it is determined that the target object can be identified in the first image, a region-of-interest in the first image, generating, when it is determined that the target object cannot be identified in the first image, a second image having a second resolution higher than the first resolution, searching, by the processing circuitry, the second image to determine whether the target object can be identified in the second image, and specifying, when it is determined that the target object can be identified in the second image, a region-of-interest in the second image.
    Type: Grant
    Filed: November 21, 2017
    Date of Patent: October 20, 2020
    Assignee: Sony Semiconductor Solutions Corporation
    Inventors: Tomohiro Takahashi, Hiroshi Tayanaka
  • Publication number: 20200273898
    Abstract: A solid state imaging device that includes a phase difference detection pixel which is a pixel for phase difference detection; a first imaging pixel which is a pixel for imaging and is adjacent to the phase difference detection pixel; and a second imaging pixel which is a pixel for imaging other than the first imaging pixel. An area of a color filter of the first imaging pixel is smaller than an area of a color filter of the second imaging pixel.
    Type: Application
    Filed: May 5, 2020
    Publication date: August 27, 2020
    Applicant: SONY CORPORATION
    Inventors: Hiroshi TAYANAKA, Yuuji INOUE, Masashi NAKATA
  • Patent number: 10680022
    Abstract: A solid state imaging device that includes a phase difference detection pixel which is a pixel for phase difference detection; a first imaging pixel which is a pixel for imaging and is adjacent to the phase difference detection pixel; and a second imaging pixel which is a pixel for imaging other than the first imaging pixel. An area of a color filter of the first imaging pixel is smaller than an area of a color filter of the second imaging pixel.
    Type: Grant
    Filed: October 2, 2017
    Date of Patent: June 9, 2020
    Assignee: Sony Corporation
    Inventors: Hiroshi Tayanaka, Yuuji Inoue, Masashi Nakata
  • Publication number: 20200083262
    Abstract: The present technology relates to a solid-state image sensing device and an electronic device for reducing noises. The solid-state image sensing device includes: a photoelectric conversion unit; a charge holding unit for holding charges transferred from the photoelectric conversion unit; a first transfer transistor for transferring charges from the photoelectric conversion unit to the charge holding unit; and a light blocking part including a first light blocking part and a second light blocking part, in which the first light blocking part is arranged between a second surface opposite to a first surface as a light receiving surface of the photoelectric conversion unit and the charge holding unit, and covers the second surface, and is formed with a first opening, and the second light blocking part surrounds the side surface of the photoelectric conversion unit. The present technology is applicable to solid-state image sensing devices of backside irradiation type, for example.
    Type: Application
    Filed: November 14, 2019
    Publication date: March 12, 2020
    Inventors: HIROSHI TAYANAKA, KENTARO AKIYAMA, YORITO SAKANO, TAKASHI OINOUE, YOSHIYA HAGIMOTO, YUSUKE MATSUMURA, NAOYUKI SATO, YUKI MIYANAMI, YOICHI UEDA, RYOSUKE MATSUMOTO
  • Patent number: 10515988
    Abstract: The present technology relates to a solid-state image sensing device and an electronic device capable of reducing noises. The solid-state image sensing device includes a photoelectric conversion unit, a charge holding unit for holding charges transferred from the photoelectric conversion unit, a first transfer transistor for transferring charges from the photoelectric conversion unit to the charge holding unit, and a light blocking part including a first light blocking part and a second light blocking part. The first light blocking part is arranged between a second surface opposite to a first surface as a light receiving surface of the photoelectric conversion unit and the charge holding unit, and covers the second surface, and is formed with a first opening, and the second light blocking part surrounds the side surface of the photoelectric conversion unit. The present technology is applicable to solid-state image sensing devices of backside irradiation type.
    Type: Grant
    Filed: February 12, 2016
    Date of Patent: December 24, 2019
    Assignee: SONY CORPORATION
    Inventors: Hiroshi Tayanaka, Kentaro Akiyama, Yorito Sakano, Takashi Oinoue, Yoshiya Hagimoto, Yusuke Matsumura, Naoyuki Sato, Yuki Miyanami, Yoichi Ueda, Ryosuke Matsumoto
  • Publication number: 20190214419
    Abstract: A solid state imaging device that includes a phase difference detection pixel which is a pixel for phase difference detection; a first imaging pixel which is a pixel for imaging and is adjacent to the phase difference detection pixel; and a second imaging pixel which is a pixel for imaging other than the first imaging pixel. An area of a color filter of the first imaging pixel is smaller than an area of a color filter of the second imaging pixel.
    Type: Application
    Filed: October 2, 2017
    Publication date: July 11, 2019
    Inventors: Hiroshi Tayanaka, Yuuji Inoue, Masashi Nakata
  • Publication number: 20190149752
    Abstract: Methods and apparatus for image processing. The method comprises generating a first image having a first resolution, searching, by processing circuitry, the first image to determine whether a target object can be identified in the first image, specifying, when it is determined that the target object can be identified in the first image, a region-of-interest in the first image, generating, when it is determined that the target object cannot be identified in the first image, a second image having a second resolution higher than the first resolution, searching, by the processing circuitry, the second image to determine whether the target object can be identified in the second image, and specifying, when it is determined that the target object can be identified in the second image, a region-of-interest in the second image.
    Type: Application
    Filed: November 21, 2017
    Publication date: May 16, 2019
    Applicant: Sony Semiconductor Solutions Corporation
    Inventors: Tomohiro Takahashi, Hiroshi Tayanaka
  • Publication number: 20190103430
    Abstract: A solid state imaging device that includes a phase difference detection pixel which is a pixel for phase difference detection; a first imaging pixel which is a pixel for imaging and is adjacent to the phase difference detection pixel; and a second imaging pixel which is a pixel for imaging other than the first imaging pixel. An area of a color filter of the first imaging pixel is smaller than an area of a color filter of the second imaging pixel.
    Type: Application
    Filed: October 2, 2017
    Publication date: April 4, 2019
    Inventors: Hiroshi Tayanaka, Yuuji Inoue, Masashi Nakata
  • Patent number: 10163962
    Abstract: The present technology relates to a solid-state imaging apparatus, a manufacturing method therefor, and an electronic apparatus by which fine pixel signals can be suitably generated. A charge accumulation section that is formed on a first semiconductor substrate and accumulates photoelectrically converted charges, a charge-retaining section that is formed on a second semiconductor substrate and retains charges accumulated in the charge accumulation section, and a transfer transistor that is formed on the first semiconductor substrate and the second semiconductor substrate and transfers charges accumulated in the charge accumulation section to the charge-retaining section are provided. A bonding interface between the first semiconductor substrate and the second semiconductor substrate is formed in a channel of the transfer transistor.
    Type: Grant
    Filed: December 29, 2016
    Date of Patent: December 25, 2018
    Assignee: Sony Semiconductor Solution Corporation
    Inventor: Hiroshi Tayanaka
  • Publication number: 20180033809
    Abstract: The present technology relates to a solid-state image sensing device and an electronic device capable of reducing noises. The solid-state image sensing device includes: a photoelectric conversion unit; a charge holding unit for holding charges transferred from the photoelectric conversion unit; a first transfer transistor for transferring charges from the photoelectric conversion unit to the charge holding unit; and a light blocking part including a first light blocking part and a second light blocking part, in which the first light blocking part is arranged between a second surface opposite to a first surface as a light receiving surface of the photoelectric conversion unit and the charge holding unit, and covers the second surface, and is formed with a first opening, and the second light blocking part surrounds the side surface of the photoelectric conversion unit. The present technology is applicable to solid-state image sensing devices of backside irradiation type, for example.
    Type: Application
    Filed: February 12, 2016
    Publication date: February 1, 2018
    Inventors: Hiroshi TAYANAKA, Kentaro AKIYAMA, Yorito SAKANO, Takashi OINOUE, Yoshiya HAGIMOTO, Yusuke MATSUMURA, Naoyuki SATO, Yuki MIYANAMI, Yoichi UEDA, Ryosuke MATSUMOTO
  • Patent number: 9786714
    Abstract: A solid-state imaging element includes a plurality of pixels which are two-dimensionally arranged and each of which includes a photoelectric conversion element, and a microlens which is provided on one or two or more first pixels out of the plurality of the pixels, in which an optical axis of the microlens extends inside a second pixel which is adjacent to the first pixel.
    Type: Grant
    Filed: February 11, 2015
    Date of Patent: October 10, 2017
    Assignee: Sony Corporation
    Inventor: Hiroshi Tayanaka
  • Patent number: 9780139
    Abstract: A solid state imaging device that includes a phase difference detection pixel which is a pixel for phase difference detection; a first imaging pixel which is a pixel for imaging and is adjacent to the phase difference detection pixel; and a second imaging pixel which is a pixel for imaging other than the first imaging pixel. An area of a color filter of the first imaging pixel is smaller than an area of a color filter of the second imaging pixel.
    Type: Grant
    Filed: December 3, 2014
    Date of Patent: October 3, 2017
    Assignee: Sony Corporation
    Inventors: Hiroshi Tayanaka, Yuuji Inoue, Masashi Nakata
  • Publication number: 20170110500
    Abstract: The present technology relates to a solid-state imaging apparatus, a manufacturing method therefor, and an electronic apparatus by which fine pixel signals can be suitably generated. A charge accumulation section that is formed on a first semiconductor substrate and accumulates photoelectrically converted charges, a charge-retaining section that is formed on a second semiconductor substrate and retains charges accumulated in the charge accumulation section, and a transfer transistor that is formed on the first semiconductor substrate and the second semiconductor substrate and transfers charges accumulated in the charge accumulation section to the charge-retaining section are provided. A bonding interface between the first semiconductor substrate and the second semiconductor substrate is formed in a channel of the transfer transistor.
    Type: Application
    Filed: December 29, 2016
    Publication date: April 20, 2017
    Inventor: Hiroshi TAYANAKA
  • Patent number: 9564465
    Abstract: The present technology relates to a solid-state imaging apparatus, a manufacturing method therefor, and an electronic apparatus by which fine pixel signals can be suitably generated. A charge accumulation section that is formed on a first semiconductor substrate and accumulates photoelectrically converted charges, a charge-retaining section that is formed on a second semiconductor substrate and retains charges accumulated in the charge accumulation section, and a transfer transistor that is formed on the first semiconductor substrate and the second semiconductor substrate and transfers charges accumulated in the charge accumulation section to the charge-retaining section are provided. A bonding interface between the first semiconductor substrate and the second semiconductor substrate is formed in a channel of the transfer transistor.
    Type: Grant
    Filed: August 15, 2014
    Date of Patent: February 7, 2017
    Assignee: Sony Semiconductor Solutions Corporation
    Inventor: Hiroshi Tayanaka
  • Publication number: 20160276396
    Abstract: A solid state imaging device that includes a phase difference detection pixel which is a pixel for phase difference detection; a first imaging pixel which is a pixel for imaging and is adjacent to the phase difference detection pixel; and a second imaging pixel which is a pixel for imaging other than the first imaging pixel. An area of a color filter of the first imaging pixel is smaller than an area of a color filter of the second imaging pixel.
    Type: Application
    Filed: December 3, 2014
    Publication date: September 22, 2016
    Applicant: SONY CORPORATION
    Inventors: Hiroshi TAYANAKA, Yuuji INOUE, Masashi NAKATA
  • Publication number: 20160204153
    Abstract: The present technology relates to a solid-state imaging apparatus, a manufacturing method therefor, and an electronic apparatus by which fine pixel signals can be suitably generated. A charge accumulation section that is formed on a first semiconductor substrate and accumulates photoelectrically converted charges, a charge-retaining section that is formed on a second semiconductor substrate and retains charges accumulated in the charge accumulation section, and a transfer transistor that is formed on the first semiconductor substrate and the second semiconductor substrate and transfers charges accumulated in the charge accumulation section to the charge-retaining section are provided. A bonding interface between the first semiconductor substrate and the second semiconductor substrate is formed in a channel of the transfer transistor.
    Type: Application
    Filed: August 15, 2014
    Publication date: July 14, 2016
    Applicant: SONY CORPORATION
    Inventor: Hiroshi TAYANAKA
  • Publication number: 20150236066
    Abstract: A solid-state imaging element includes a plurality of pixels which are two-dimensionally arranged and each of which includes a photoelectric conversion element, and a microlens which is provided on one or two or more first pixels out of the plurality of the pixels, in which an optical axis of the microlens extends inside a second pixel which is adjacent to the first pixel.
    Type: Application
    Filed: February 11, 2015
    Publication date: August 20, 2015
    Inventor: Hiroshi Tayanaka
  • Patent number: 8817164
    Abstract: An imaging device includes a basic cell having two or more the pixels that share floating diffusion. The imaging device also includes a transistor shared by the two or more pixels in the basic cell and arranged on the outside of the two or more pixels. The imaging device further includes a light receiving unit connected to the floating diffusion shared by the pixels in the basic cell through a transfer gate. In the imaging device, on-chip lenses are arranged substantially at regular intervals. Also, an optical waveguide is formed so that the position thereof in the surface of the solid-state imaging device is located at a position shifted from the center of the light receiving unit to the transistor and in the inside of the light receiving unit and the inside of the on-chip lens.
    Type: Grant
    Filed: January 31, 2013
    Date of Patent: August 26, 2014
    Assignee: Sony Corporation
    Inventors: Hiroshi Tayanaka, Susumu Ooki, Junichi Furukawa, Fumiaki Okazaki
  • Patent number: RE45017
    Abstract: A porous Si layer is formed on a single-crystal Si substrate, and then a p+-type Si layer, p-type Si layer and n+-type Si layer which all make up a solar cell layer. After a protective film is made on the n+-type Si layer, the rear surface of the single-crystal Si substrate is bonded to a tool, and another tool is bonded to the front surface of the protective film. Theo, the tools are pulled in opposite directions to mechanically rupture the porous Si layer and to separate the solar cell layer from the single-crystal substrate. The solar cell layer is subsequently sandwiched between two plastic substrates to make a flexible thin-film solar cell.
    Type: Grant
    Filed: August 29, 2011
    Date of Patent: July 15, 2014
    Assignee: Sony Corporation
    Inventors: Takeshi Matsushita, Hiroshi Tayanaka