Patents by Inventor Hiroshi Tayanaka

Hiroshi Tayanaka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20130234220
    Abstract: An imaging device includes a basic cell having two or more the pixels that share floating diffusion. The imaging device also includes a transistor shared by the two or more pixels in the basic cell and arranged on the outside of the two or more pixels. The imaging device further includes a light receiving unit connected to the floating diffusion shared by the pixels in the basic cell through a transfer gate. In the imaging device, on-chip lenses are arranged substantially at regular intervals. Also, an optical waveguide is formed so that the position thereof in the surface of the solid-state imaging device is located at a position shifted from the center of the light receiving unit to the transistor and in the inside of the light receiving unit and the inside of the on-chip lens.
    Type: Application
    Filed: January 31, 2013
    Publication date: September 12, 2013
    Applicant: SONY CORPORATION
    Inventors: Hiroshi Tayanaka, Susumu Ooki, Junichi Furukawa, Fumiaki Okazaki
  • Patent number: 8390726
    Abstract: An imaging device includes a basic cell having two or more the pixels that share floating diffusion. The imaging device also includes a transistor shared by the two or more pixels in the basic cell and arranged on the outside of the two or more pixels. The imaging device further includes a light receiving unit connected to the floating diffusion shared by the pixels in the basic cell through a transfer gate. In the imaging device, on-chip lenses are arranged substantially at regular intervals. Also, an optical waveguide is formed so that the position thereof in the surface of the solid-state imaging device is located at a position shifted from the center of the light receiving unit to the transistor and in the inside of the light receiving unit and the inside of the on-chip lens.
    Type: Grant
    Filed: March 22, 2010
    Date of Patent: March 5, 2013
    Assignee: Sony Corporation
    Inventors: Hiroshi Tayanaka, Susumu Ooki, Junichi Furukawa, Fumiaki Okazaki
  • Publication number: 20120038814
    Abstract: A solid-state image sensing device includes a plurality of pixels each made up of a photoelectric conversion region and a device to read signal charges from the photoelectric conversion region, and an optical waveguide formed corresponding to the photoelectric conversion region of each pixel, wherein, when viewed in a cross-section along a horizontal plane, the optical waveguide includes an annular core layer having a higher refractive index than a portion surrounding the annular core layer, and a clad layer surrounded by the annular core layer and having a lower refractive index than the annular core layer.
    Type: Application
    Filed: August 2, 2011
    Publication date: February 16, 2012
    Applicant: SONY CORPORATION
    Inventor: Hiroshi Tayanaka
  • Publication number: 20100245648
    Abstract: An imaging device includes a basic cell having two or more the pixels that share floating diffusion. The imaging device also includes a transistor shared by the two or more pixels in the basic cell and arranged on the outside of the two or more pixels. The imaging device further includes a light receiving unit connected to the floating diffusion shared by the pixels in the basic cell through a transfer gate. In the imaging device, on-chip lenses are arranged substantially at regular intervals. Also, an optical waveguide is formed so that the position thereof in the surface of the solid-state imaging device is located at a position shifted from the center of the light receiving unit to the transistor and in the inside of the light receiving unit and the inside of the on-chip lens.
    Type: Application
    Filed: March 22, 2010
    Publication date: September 30, 2010
    Applicant: SONY CORPORATION
    Inventors: Hiroshi Tayanaka, Susumu Ooki, Junichi Furukawa, Fumiaki Okazaki
  • Patent number: 7804094
    Abstract: A process of fabricating a thin film semiconductor device is proposed, which is suitable for mass production and enables to lower the production cost. A first substrate is subject to anodization to form a porous layer thereon. Then, a thin film semiconductor layer is formed on the porous layer. Using the thin film semiconductor layer, a semiconductor device is formed, and wiring is formed between the semiconductor devices. After that, the semiconductor devices on the first substrate is bonded to a second substrate. The semiconductor devices are separated from the first substrate. Further, the semiconductor devices are electrically insulated by removing a part of the thin film semiconductor layer from the separated surface of the second substrate.
    Type: Grant
    Filed: April 6, 2009
    Date of Patent: September 28, 2010
    Assignee: Sony Corporation
    Inventor: Hiroshi Tayanaka
  • Patent number: 7696020
    Abstract: A process of fabricating a thin film semiconductor device is proposed, which is suitable for mass production and enables to lower the production cost. A first substrate is subject to anodization to form a porous layer thereon. Then, a thin film semiconductor layer is formed on the porous layer. Using the thin film semiconductor layer, a semiconductor device is formed, and wiring is formed between the semiconductor devices. After that, the semiconductor devices on the first substrate is bonded to a second substrate. The semiconductor devices are separated from the first substrate. Further, the semiconductor devices are electrically insulated by removing a part of the thin film semiconductor layer from the separated surface of the second substrate.
    Type: Grant
    Filed: August 22, 2006
    Date of Patent: April 13, 2010
    Assignee: Sony Corporation
    Inventor: Hiroshi Tayanaka
  • Patent number: 7626200
    Abstract: A process of fabricating a thin film semiconductor device is proposed, which is suitable for mass production and enables to lower the production cost. A first substrate is subject to anodization to form a porous layer thereon. Then, a thin film semiconductor layer is formed on the porous layer. Using the thin film semiconductor layer, a semiconductor device is formed, and wiring is formed between the semiconductor devices. After that, the semiconductor devices on the first substrate is bonded to a second substrate. The semiconductor devices are separated from the first substrate. Further, the semiconductor devices are electrically insulated by removing a part of the thin film semiconductor layer from the separated surface of the second substrate.
    Type: Grant
    Filed: September 14, 2004
    Date of Patent: December 1, 2009
    Assignee: Sony Corporation
    Inventor: Hiroshi Tayanaka
  • Publication number: 20090224267
    Abstract: A process of fabricating a thin film semiconductor device is proposed, which is suitable for mass production and enables to lower the production cost. A first substrate is subject to anodization to form a porous layer thereon. Then, a thin film semiconductor layer is formed on the porous layer. Using the thin film semiconductor layer, a semiconductor device is formed, and wiring is formed between the semiconductor devices. After that, the semiconductor devices on the first substrate is bonded to a second substrate. The semiconductor devices are separated from the first substrate. Further, the semiconductor devices are electrically insulated by removing a part of the thin film semiconductor layer from the separated surface of the second substrate.
    Type: Application
    Filed: April 6, 2009
    Publication date: September 10, 2009
    Applicant: Sony Corporation
    Inventor: Hiroshi Tayanaka
  • Publication number: 20060281235
    Abstract: A process of fabricating a thin film semiconductor device is proposed, which is suitable for mass production and enables to lower the production cost. A first substrate is subject to anodization to form a porous layer thereon. Then, a thin film semiconductor layer is formed on the porous layer. Using the thin film semiconductor layer, a semiconductor device is formed, and wiring is formed between the semiconductor devices. After that, the semiconductor devices on the first substrate is bonded to a second substrate. The semiconductor devices are separated from the first substrate. Further, the semiconductor devices are electrically insulated by removing a part of the thin film semiconductor layer from the separated surface of the second substrate.
    Type: Application
    Filed: August 22, 2006
    Publication date: December 14, 2006
    Applicant: Sony Corporation
    Inventor: Hiroshi Tayanaka
  • Publication number: 20050059219
    Abstract: A process of fabricating a thin film semiconductor device is proposed, which is suitable for mass production and enables to lower the production cost. A first substrate is subject to anodization to form a porous layer thereon. Then, a thin film semiconductor layer is formed on the porous layer. Using the thin film semiconductor layer, a semiconductor device is formed, and wiring is formed between the semiconductor devices. After that, the semiconductor devices on the first substrate is bonded to a second substrate. The semiconductor devices are separated from the first substrate. Further, the semiconductor devices are electrically insulated by removing a part of the thin film semiconductor layer from the separated surface of the second substrate.
    Type: Application
    Filed: September 14, 2004
    Publication date: March 17, 2005
    Applicant: Sony Corporation
    Inventor: Hiroshi Tayanaka
  • Patent number: 6759310
    Abstract: A semiconductor substrate includes a porous semiconductor having: a porous layer, with an impurity concentration on varying in the depth direction, or having a porous semiconductor containing an impurity with a content of 1×1018cm−3 or more, or provided by pore formation in an epitaxial growth layer. A method of making a semiconductor substrate; includes forming a variant impurity layer with an impurity concentration varying in the depth direction on one surface of a supporting substrate, and converting the variant impurity layer into a porous layer having a variant porosity in the depth direction. A method of making a thin-film semiconductive member; includes forming a semiconductive thin film on the supporting substrate and separating it by cleavage in the porous phase, in addition to the method for making the semiconductor substrate.
    Type: Grant
    Filed: February 4, 2002
    Date of Patent: July 6, 2004
    Assignee: Sony Corporation
    Inventor: Hiroshi Tayanaka
  • Publication number: 20020153595
    Abstract: A semiconductor substrate comprises a porous semiconductor having a porous layer with an impurity concentration distribution varying in the depth direction. Alternatively, the semiconductor substrate comprises a porous layer comprising a porous semiconductor containing an impurity with a content of 1×1018 cm−3 or more, or comprises a porous layer provided by pore formation in an epitaxial growth layer. A thin-film semiconductive member is formed on one surface of a supporting substrate with a porous layer provided having the above-mentioned configuration therebetween, and separated from the supporting substrate by cleavage in the porous layer. In a method for making a semiconductor substrate, a variant impurity layer with an impurity concentration varying in the depth direction is formed on one surface of a supporting substrate. Next, the variant impurity layer is converted into a porous layer having a variant porosity in the depth direction.
    Type: Application
    Filed: February 4, 2002
    Publication date: October 24, 2002
    Inventor: Hiroshi Tayanaka
  • Patent number: 6426274
    Abstract: The present invention provides new and improved methods for making crystalline semiconductor thin films which may be bonded to different kinds of substrates. The thin films may be flexible. In accordance with preferred methods, a multi-layer porous structure including two or more porous layers having different porosities is formed in a semiconductor substrate. A semiconductor thin film is optionally grown on the porous structure. Electrodes and/or a desired support substrate may be attached to the grown film. The grown film or an upper portion of the semiconductor substrate is separated from the semiconductor substrate along a line of weakness defined in the porous structure. The separated thin film attached to the support substrate may be further processed to provide improved film products, solar panels and light emitting diode devices.
    Type: Grant
    Filed: July 14, 2000
    Date of Patent: July 30, 2002
    Assignee: Sony Corporation
    Inventor: Hiroshi Tayanaka
  • Patent number: 6326280
    Abstract: The present invention provides new and improved thin film semiconductors and methods for making crystalline semiconductor thin films which may be bonded to different kinds of substrates. The thin films may be flexible. In accordance with preferred methods, a multi-layer porous structure including two or more porous layers having different porosities is formed in a semiconductor substrate. A semiconductor thin film is grown on the porous structure. Electrodes and/or a desired support substrate may be attached to the grown film. The grown film is separated from the semiconductor substrate along a line of weakness defined in the porous structure. The separated thin film attached to the support substrate may be further processed to provide improved film products, solar panels and light emitting diode devices. These thin film semiconductors are excellent in crystallinity and may be inexpensively produced, thereby enabling production of solar cells and light emitting diodes at lower cost.
    Type: Grant
    Filed: July 14, 2000
    Date of Patent: December 4, 2001
    Assignee: Sony Corporation
    Inventor: Hiroshi Tayanaka
  • Patent number: 6194245
    Abstract: The present invention provides new and improved methods for making crystalline semiconductor thin films which may be bonded to different kinds of substrates. The thin films may be flexible. In accordance with preferred methods, a multi-layer porous structure including two or more porous layers having different porosities is formed in a semiconductor substrate. A semiconductor thin film is grown on the porous structure. Electrodes and/or a desired support substrate may be attached to the grown film. The grown film is separated from the semiconductor substrate along a line of weakness defined in the porous structure. The separated thin film attached to the support substrate may be further processed to provide improved film products, solar panels and light emitting diode devices. These thin film semiconductors are excellent in crystallinity and may be inexpensively produced, thereby enabling production of solar cells and light emitting diodes at lower cost.
    Type: Grant
    Filed: December 7, 1999
    Date of Patent: February 27, 2001
    Assignee: Sony Corporation
    Inventor: Hiroshi Tayanaka
  • Patent number: 6194239
    Abstract: The present invention provides new and improved methods for making crystalline semiconductor thin films which may be bonded to different kinds of substrates. The thin films may be flexible. In accordance with preferred methods, a multi-layer porous structure including two or more porous layers having different porosities is formed in a semiconductor substrate. A semiconductor thin film is grown on the porous structure. Electrodes and/or a desired support substrate may be attached to the grown film. The grown film is separated from the semiconductor substrate along a line of weakness defined in the porous structure. The separated thin film attached to the support substrate may be further processed to provide improved film products, solar panels and light emitting diode devices. These thin film semiconductors are excellent in crystallinity and may be inexpensively produced, thereby enabling production of solar cells and light emitting diodes at lower cost.
    Type: Grant
    Filed: December 7, 1999
    Date of Patent: February 27, 2001
    Assignee: Sony Corporation
    Inventor: Hiroshi Tayanaka
  • Patent number: 6107213
    Abstract: The present invention provides new and improved methods for making crystalline semiconductor thin films which may be bonded to different kinds of substrates. The thin films may be flexible. In accordance with preferred methods, a multi-layer porous structure including two or more porous layers having different porosities is formed in a semiconductor substrate. A semiconductor thin film is grown on the porous structure. Electrodes and/or a desired support substrate may be attached to the grown film. The grown film is separated from the semiconductor substrate along a line of weakness defined in the porous structure. The separated thin film attached to the support substrate may be further processed to provide improved film products, solar panels and light emitting diode devices. These thin film semiconductors are excellent in crystallinity and may be inexpensively produced, thereby enabling production of solar cells and light emitting diodes at lower cost.
    Type: Grant
    Filed: March 14, 1997
    Date of Patent: August 22, 2000
    Assignee: Sony Corporation
    Inventor: Hiroshi Tayanaka
  • Patent number: 5811348
    Abstract: A porous Si layer is formed on a single-crystal Si substrate, and then a p.sup.+ -type Si layer, p-type Si layer and n.sup.+ -type Si layer which all make up a solar cell layer. After a protective film is made on the n.sup.+ -type Si layer, the rear surface of the single-crystal Si substrate is bonded to a tool, and another tool is bonded to the front surface of the protective film. Then, the tools are pulled in opposite directions to mechanically rupture the porous Si layer and to separate the solar cell layer from the single-crystal substrate. The solar cell layer is subsequently sandwiched between two plastic substrates to make a flexible thin-film solar cell.
    Type: Grant
    Filed: February 1, 1996
    Date of Patent: September 22, 1998
    Assignee: Sony Corporation
    Inventors: Takeshi Matsushita, Hiroshi Tayanaka
  • Patent number: RE42830
    Abstract: A porous Si layer is formed on a single-crystal Si substrate, and then a p+-type Si layer, p-type Si layer and n+-type Si layer which all make up a solar cell layer. After a protective film is made on the n+-type Si layer, the rear surface of the single-crystal Si substrate is bonded to a tool, and another tool is bonded to the front surface of the protective film. Then, the tools are pulled in opposite directions to mechanically rupture the porous Si layer and to separate the solar cell layer from the single-crystal substrate. The solar cell layer is subsequently sandwiched between two plastic substrates to make a flexible thin-film solar cell.
    Type: Grant
    Filed: December 23, 2004
    Date of Patent: October 11, 2011
    Assignee: Sony Corporation
    Inventors: Takeshi Matsushita, Hiroshi Tayanaka
  • Patent number: RE45017
    Abstract: A porous Si layer is formed on a single-crystal Si substrate, and then a p+-type Si layer, p-type Si layer and n+-type Si layer which all make up a solar cell layer. After a protective film is made on the n+-type Si layer, the rear surface of the single-crystal Si substrate is bonded to a tool, and another tool is bonded to the front surface of the protective film. Theo, the tools are pulled in opposite directions to mechanically rupture the porous Si layer and to separate the solar cell layer from the single-crystal substrate. The solar cell layer is subsequently sandwiched between two plastic substrates to make a flexible thin-film solar cell.
    Type: Grant
    Filed: August 29, 2011
    Date of Patent: July 15, 2014
    Assignee: Sony Corporation
    Inventors: Takeshi Matsushita, Hiroshi Tayanaka