Abstract: A medical information processing apparatus includes a hardware processor that sets first checking authority and second checking authority. The first checking authority is authority to check an interpretation report created by a first user who has interpreted a medical image of a subject. The second checking authority is authority to check the interpretation report and is different from the first checking authority.

Abstract: The solid titanium catalyst component (I) of the present invention contains titanium, magnesium, halogen, and a cyclic multiple-ester-group-containing compound (a) represented by the following formula (1).

Abstract: A solid titanium catalyst component (I) for olefin polymer production contains titanium, magnesium, halogen, and a cyclic multiple-ester-group-containing compound (a) represented by the formula (1). Preferably, a propylene polymer that is obtained by the olefin polymerization method and has specific thermal properties as determined primarily by differential scanning calorimetry (DSC).

Abstract: A radiographic interpretation management apparatus includes a hardware processor. The hardware processor is configured to obtain an automatically generated finding obtained by computer processing on medical information, obtain a radiographic interpretation finding created by a user based on the medical information, and be able to set by user operation a combination that is to be displayed with highlight among combinations of a result of the automatically generated finding and a result of the radiographic interpretation finding.

Abstract: Copolymers when used as lubricating oil viscosity modifiers enable lubricating oils to show excellent low-temperature properties. Processes for producing the copolymers are disclosed. Lubricating oil viscosity modifiers and lubricating oil compositions contain the copolymers. A copolymer includes structural units derived from ethylene and structural units derived from a C3-20 ?-olefin and satisfies the following requirements (1) to (8): (1) the melting point (Tm) according to DSC is in the range of 0 to 60° C.; (2) the melting point (Tm) and the density D (g/cm3) satisfy the equation: Tm?1073×D?893; (3) Mw/Mn according to GPC is from 1.6 to 5.0; (4) the half-value width (?Thalf) of a melting peak measured by DSC is not more than 90° C.; (5) the half-value width (?Thalf) and the melting point (Tm) satisfy the equation: ?Thalf??0.71×Tm+101.4; (6) the heat of fusion (?H) as measured by DSC is not more than 60 J/g; (7) the crystallization temperature (Tc) measured by DSC is not more than 70° C.

Abstract: A semiconductor device with improved reliability and its manufacturing method is offered. The semiconductor device of this invention includes a semiconductor substrate, a pad electrode formed on the semiconductor substrate through an insulation layer made of silicon oxide, silicon nitride or the like, a supporting plate bonded to a top surface of the semiconductor substrate to cover the pad electrode and a via hole formed in the semiconductor substrate and extending from a back surface of the semiconductor substrate to the pad electrode, wherein an aperture of the via hole at a portion close to the pad electrode is larger than an aperture of the via hole at a portion close to the back surface of the semiconductor substrate.

Abstract: A semiconductor device with improved reliability and its manufacturing method is offered. The semiconductor device of this invention includes a semiconductor substrate, a pad electrode formed on the semiconductor substrate through an insulation layer made of silicon oxide, silicon nitride or the like, a supporting plate bonded to a top surface of the semiconductor substrate to cover the pad electrode and a via hole formed in the semiconductor substrate and extending from a back surface of the semiconductor substrate to the pad electrode, wherein an aperture of the via hole at a portion close to the pad electrode is larger than an aperture of the via hole at a portion close to the back surface of the semiconductor substrate.

Abstract: An ?-olefin/non-conjugated cyclic polyene copolymer (A) includes structural units (I) derived from an ?-olefin and structural units (H) derived from a vinyl group-containing cyclic olefin. The copolymer has a molecular weight distribution (Mw/Mn) of not more than 2.7 and is amorphous or low crystalline with a crystalline heat of fusion (?H) of less than 90 kJ/kg. The copolymer is efficiently produced using a specific transition metal catalyst that has a ligand with a phenoxyimine skeleton. The copolymer of the invention has a narrower molecular weight distribution and a higher content of vinyl groups as compared with existing copolymers. The copolymer can then give crosslinked products having excellent tensile properties. The copolymer is also used as a plasticizer for polymers such as rubbers, and provides excellent processability and superior mechanical strength and rubber elasticity of crosslinked products.

Abstract: Copolymers when used as lubricating oil viscosity modifiers enable lubricating oils to show excellent low-temperature properties. Processes for producing the copolymers are disclosed. Lubricating oil viscosity modifiers and lubricating oil compositions contain the copolymers. A copolymer includes structural units derived from ethylene and structural units derived from a C3-20 ?-olefin and satisfies the following requirements (1) to (8): (1) the melting point (Tm) according to DSC is in the range of 0 to 60° C.; (2) the melting point (Tm) and the density D (g/cm3) satisfy the equation: Tm?1073×D?893; (3) Mw/Mn according to GPC is from 1.6 to 5.0; (4) the half-value width (?Thalf) of a melting peak measured by DSC is not more than 90° C.; (5) the half-value width (?Thalf) and the melting point (Tm) satisfy the equation: ?Thalf??0.71×Tm+101.4; (6) the heat of fusion (?H) as measured by DSC is not more than 60 J/g; (7) the crystallization temperature (Tc) measured by DSC is not more than 70° C.

Abstract: Disclosed is a trimethine dimer compound represented by the following general formula (I) and optical recording medium containing such a compound in a recording layer. (I)(In the formula, symbols are as in the description. When both Xa2 and Xb2 are imino groups, one of Xa1, Xb1, Xa3 and Xb3 is necessarily a 1-alkyl-1-benzylmethylene group which may have a substituent, a 1,1-dibenzylmethylene group which may have a substituent or a cycloalkane-1,1-diyl group having 3 to 6 carbon atoms which may have a substituent.

Abstract: This invention offers a manufacturing method to reduce a manufacturing cost of a semiconductor device having a through-hole electrode by simplifying a manufacturing process and to enhance yield of the semiconductor device. A first insulation film is formed on a top surface of a semiconductor substrate. A part of the first insulation film is etched to form an opening in which a part of the semiconductor substrate is exposed. Then a pad electrode is formed in the opening and on the first insulation film. A second insulation film is formed on a back surface of the semiconductor substrate. Then a via hole having an aperture larger than the opening is formed. And a third insulation film is formed in the via hole and on the second insulation film. The third insulation film on a bottom of the via hole is etched to expose the pad electrode. After that, a through-hole electrode and a wiring layer are formed in the via hole.

Abstract: The object is to provide a novel nonsolvate-form crystal of polymethine compound which has good stability in solution, shows a high gram extinction coefficient, is excellent in storage stability, is easy to handle and is highly sensitive to general-purpose semiconductor lasers. Thus are provided a nonsolvate-form crystal of a polymethine compound of the formula (I) and a process for producing the nonsolvate-form crystal of polymethine compound of formula (I) which comprises reacting a polymethine ether compound of the formula (II) given below with p-toluenesulfonic acid. (In the above formula, TsO represents the p-toluenesulfonic acid residue.) (In the above formula, R represents an alkyl group, an alkoxyalkyl group or an optionally substituted aryl group.

Abstract: A phthalocyanine compound represented by the following general formula (I) and the mixture thereof, and an optical recording medium containing the compound/mixture in its recording layer. wherein in formula (I), M is two hydrogen atoms, a divalent metal atom, a mono-substituted trivalent metal atom, a di-substituted tetravalent metal atom, or an oxymetal, and L1, L2, L3 and L4 are each independently formula (a), formula (b), or formula (c): wherein X, Y, Z and R are defined.

Abstract: A semiconductor device with improved reliability and its manufacturing method is offered. The semiconductor device of this invention includes a semiconductor substrate, a pad electrode formed on the semiconductor substrate through an insulation layer made of silicon oxide, silicon nitride or the like, a supporting plate bonded to a top surface of the semiconductor substrate to cover the pad electrode and a via hole formed in the semiconductor substrate and extending from a back surface of the semiconductor substrate to the pad electrode, wherein an aperture of the via hole at a portion close to the pad electrode is larger than an aperture of the via hole at a portion close to the back surface of the semiconductor substrate.

Abstract: A manufacturing method of a semiconductor device having a through-hole electrode is offered to improve reliability and yield of the semiconductor device. A via hole penetrating through a semiconductor substrate is formed at a location corresponding to a pad electrode. An insulation film is formed on a back surface of the semiconductor substrate and a surface of the via hole. A reinforcing insulation film having an overhung portion at a rim of the via hole is formed on the back surface of the semiconductor substrate. The insulation film on a bottom of the via hole is removed by etching using the reinforcing insulation film as a mask, while the insulation film on a side wall of the via hole remains. The through-hole electrode, a wiring layer and a conductive terminal are formed on the back surface of the semiconductor substrate and the via hole. Finally, the semiconductor substrate is divided into a plurality of semiconductor dice by dicing.

Abstract: This invention offers a manufacturing method to reduce a manufacturing cost of a semiconductor device having a through-hole electrode by simplifying a manufacturing process and to enhance yield of the semiconductor device. A first insulation film is formed on a top surface of a semiconductor substrate. A part of the first insulation film is etched to form an opening in which a part of the semiconductor substrate is exposed. Then a pad electrode is formed in the opening and on the first insulation film. A second insulation film is formed on a back surface of the semiconductor substrate. Then a via hole having an aperture larger than the opening is formed. And a third insulation film is formed in the via hole and on the second insulation film. The third insulation film on a bottom of the via hole is etched to expose the pad electrode. After that, a through-hole electrode and a wiring layer are formed in the via hole.

Abstract: A manufacturing method of a semiconductor device having a through-hole electrode is offered to improve reliability and yield of the semiconductor device. A via hole penetrating through a semiconductor substrate is formed at a location corresponding to a pad electrode. An insulation film is formed on a back surface of the semiconductor substrate and a surface of the via hole. A reinforcing insulation film having an overhung portion at a rim of the via hole is formed on the back surface of the semiconductor substrate. The insulation film on a bottom of the via hole is removed by etching using the reinforcing insulation film as a mask, while the insulation film on a side wall of the via hole remains. The through-hole electrode, a wiring layer and a conductive terminal are formed on the back surface of the semiconductor substrate and the via hole. Finally, the semiconductor substrate is divided into a plurality of semiconductor dice by dicing.

Abstract: A phthalocyanine compound represented by the following general formula (I) and the mixture thereof, and an optical recording medium containing the compound/mixture in its recording layer. wherein in formula (I), M is two hydrogen atoms, a divalent metal atom, a mono-substituted trivalent metal atom, a di-substituted tetravalent metal atom, or an oxymetal, and L1, L2, L3 and L4 are each independently formula (a), formula (b), or formula (c): wherein X, Y, Z and R are defined.

Abstract: A semiconductor device with improved reliability and its manufacturing method is offered. The semiconductor device of this invention includes a semiconductor substrate, a pad electrode formed on the semiconductor substrate through an insulation layer made of silicon oxide, silicon nitride or the like, a supporting plate bonded to a top surface of the semiconductor substrate to cover the pad electrode and a via hole formed in the semiconductor substrate and extending from a back surface of the semiconductor substrate to the pad electrode, wherein an aperture of the via hole at a portion close to the pad electrode is larger than an aperture of the via hole at a portion close to the back surface of the semiconductor substrate.

Abstract: The invention relates to a novel phthalocyanine compound which absorbs in a near-infrared region of 700˜1000 nm with little absorption in the visible region of the spectrum and can be applied with advantage to a near-infrared light-absorbing filter for plasma display, a secret ink and other applications and to a process for producing the phthalocyanine compound. The above phthalocyanine compound has the following general formula (I). A near-infrared light-absorbing material containing the same is also provided.