Abstract: A line narrowing gas laser device includes a line narrowing device, an output coupling mirror, a laser chamber arranged on an optical path of an optical resonator, a first holder which supports the output coupling mirror, a second holder which supports the first holder to be rotatable about a rotation axis of the first holder, and an adjustment device supported by the second holder and being in contact with the first holder to rotate the first holder about the rotation axis. The line narrowing device has a characteristic of changing, into a first direction, beam pointing of laser light output toward the output coupling mirror when temperature inside the line narrowing device rises. The second holder and the adjustment device rotate the first holder in a direction in which a change in the first direction in the beam pointing of the laser light is suppressed by thermal expansion.

Abstract: A dispersant-containing liquid of the present disclosure contains anionic water-soluble polyester containing a carboxylate and/or a sulfonate, polyalkylene glycols, and water. When a content of the water-soluble polyester in the dispersant-containing liquid is defined as XPEs [mass %] and a content of the polyalkylene glycols in the dispersant-containing liquid is defined as XPAG [mass %], it is preferable that Expression (4) be satisfied. 0.01 ? XPAG / XPEs ? 2.

Abstract: A medical information processing apparatus includes a hardware processor that sets first checking authority and second checking authority. The first checking authority is authority to check an interpretation report created by a first user who has interpreted a medical image of a subject. The second checking authority is authority to check the interpretation report and is different from the first checking authority.

Abstract: The solid titanium catalyst component (I) of the present invention contains titanium, magnesium, halogen, and a cyclic multiple-ester-group-containing compound (a) represented by the following formula (1).

Abstract: A solid titanium catalyst component (I) for olefin polymer production contains titanium, magnesium, halogen, and a cyclic multiple-ester-group-containing compound (a) represented by the formula (1). Preferably, a propylene polymer that is obtained by the olefin polymerization method and has specific thermal properties as determined primarily by differential scanning calorimetry (DSC).

Abstract: A radiographic interpretation management apparatus includes a hardware processor. The hardware processor is configured to obtain an automatically generated finding obtained by computer processing on medical information, obtain a radiographic interpretation finding created by a user based on the medical information, and be able to set by user operation a combination that is to be displayed with highlight among combinations of a result of the automatically generated finding and a result of the radiographic interpretation finding.

Abstract: Copolymers when used as lubricating oil viscosity modifiers enable lubricating oils to show excellent low-temperature properties. Processes for producing the copolymers are disclosed. Lubricating oil viscosity modifiers and lubricating oil compositions contain the copolymers. A copolymer includes structural units derived from ethylene and structural units derived from a C3-20 ?-olefin and satisfies the following requirements (1) to (8): (1) the melting point (Tm) according to DSC is in the range of 0 to 60° C.; (2) the melting point (Tm) and the density D (g/cm3) satisfy the equation: Tm?1073×D?893; (3) Mw/Mn according to GPC is from 1.6 to 5.0; (4) the half-value width (?Thalf) of a melting peak measured by DSC is not more than 90° C.; (5) the half-value width (?Thalf) and the melting point (Tm) satisfy the equation: ?Thalf??0.71×Tm+101.4; (6) the heat of fusion (?H) as measured by DSC is not more than 60 J/g; (7) the crystallization temperature (Tc) measured by DSC is not more than 70° C.

Abstract: A semiconductor device with improved reliability and its manufacturing method is offered. The semiconductor device of this invention includes a semiconductor substrate, a pad electrode formed on the semiconductor substrate through an insulation layer made of silicon oxide, silicon nitride or the like, a supporting plate bonded to a top surface of the semiconductor substrate to cover the pad electrode and a via hole formed in the semiconductor substrate and extending from a back surface of the semiconductor substrate to the pad electrode, wherein an aperture of the via hole at a portion close to the pad electrode is larger than an aperture of the via hole at a portion close to the back surface of the semiconductor substrate.

Abstract: A semiconductor device with improved reliability and its manufacturing method is offered. The semiconductor device of this invention includes a semiconductor substrate, a pad electrode formed on the semiconductor substrate through an insulation layer made of silicon oxide, silicon nitride or the like, a supporting plate bonded to a top surface of the semiconductor substrate to cover the pad electrode and a via hole formed in the semiconductor substrate and extending from a back surface of the semiconductor substrate to the pad electrode, wherein an aperture of the via hole at a portion close to the pad electrode is larger than an aperture of the via hole at a portion close to the back surface of the semiconductor substrate.

Abstract: An ?-olefin/non-conjugated cyclic polyene copolymer (A) includes structural units (I) derived from an ?-olefin and structural units (H) derived from a vinyl group-containing cyclic olefin. The copolymer has a molecular weight distribution (Mw/Mn) of not more than 2.7 and is amorphous or low crystalline with a crystalline heat of fusion (?H) of less than 90 kJ/kg. The copolymer is efficiently produced using a specific transition metal catalyst that has a ligand with a phenoxyimine skeleton. The copolymer of the invention has a narrower molecular weight distribution and a higher content of vinyl groups as compared with existing copolymers. The copolymer can then give crosslinked products having excellent tensile properties. The copolymer is also used as a plasticizer for polymers such as rubbers, and provides excellent processability and superior mechanical strength and rubber elasticity of crosslinked products.

Abstract: Copolymers when used as lubricating oil viscosity modifiers enable lubricating oils to show excellent low-temperature properties. Processes for producing the copolymers are disclosed. Lubricating oil viscosity modifiers and lubricating oil compositions contain the copolymers. A copolymer includes structural units derived from ethylene and structural units derived from a C3-20 ?-olefin and satisfies the following requirements (1) to (8): (1) the melting point (Tm) according to DSC is in the range of 0 to 60° C.; (2) the melting point (Tm) and the density D (g/cm3) satisfy the equation: Tm?1073×D?893; (3) Mw/Mn according to GPC is from 1.6 to 5.0; (4) the half-value width (?Thalf) of a melting peak measured by DSC is not more than 90° C.; (5) the half-value width (?Thalf) and the melting point (Tm) satisfy the equation: ?Thalf??0.71×Tm+101.4; (6) the heat of fusion (?H) as measured by DSC is not more than 60 J/g; (7) the crystallization temperature (Tc) measured by DSC is not more than 70° C.

Abstract: Disclosed is a trimethine dimer compound represented by the following general formula (I) and optical recording medium containing such a compound in a recording layer. (I)(In the formula, symbols are as in the description. When both Xa2 and Xb2 are imino groups, one of Xa1, Xb1, Xa3 and Xb3 is necessarily a 1-alkyl-1-benzylmethylene group which may have a substituent, a 1,1-dibenzylmethylene group which may have a substituent or a cycloalkane-1,1-diyl group having 3 to 6 carbon atoms which may have a substituent.

Abstract: This invention offers a manufacturing method to reduce a manufacturing cost of a semiconductor device having a through-hole electrode by simplifying a manufacturing process and to enhance yield of the semiconductor device. A first insulation film is formed on a top surface of a semiconductor substrate. A part of the first insulation film is etched to form an opening in which a part of the semiconductor substrate is exposed. Then a pad electrode is formed in the opening and on the first insulation film. A second insulation film is formed on a back surface of the semiconductor substrate. Then a via hole having an aperture larger than the opening is formed. And a third insulation film is formed in the via hole and on the second insulation film. The third insulation film on a bottom of the via hole is etched to expose the pad electrode. After that, a through-hole electrode and a wiring layer are formed in the via hole.

Abstract: The object is to provide a novel nonsolvate-form crystal of polymethine compound which has good stability in solution, shows a high gram extinction coefficient, is excellent in storage stability, is easy to handle and is highly sensitive to general-purpose semiconductor lasers. Thus are provided a nonsolvate-form crystal of a polymethine compound of the formula (I) and a process for producing the nonsolvate-form crystal of polymethine compound of formula (I) which comprises reacting a polymethine ether compound of the formula (II) given below with p-toluenesulfonic acid. (In the above formula, TsO represents the p-toluenesulfonic acid residue.) (In the above formula, R represents an alkyl group, an alkoxyalkyl group or an optionally substituted aryl group.

Abstract: A phthalocyanine compound represented by the following general formula (I) and the mixture thereof, and an optical recording medium containing the compound/mixture in its recording layer. wherein in formula (I), M is two hydrogen atoms, a divalent metal atom, a mono-substituted trivalent metal atom, a di-substituted tetravalent metal atom, or an oxymetal, and L1, L2, L3 and L4 are each independently formula (a), formula (b), or formula (c): wherein X, Y, Z and R are defined.

Abstract: A semiconductor device with improved reliability and its manufacturing method is offered. The semiconductor device of this invention includes a semiconductor substrate, a pad electrode formed on the semiconductor substrate through an insulation layer made of silicon oxide, silicon nitride or the like, a supporting plate bonded to a top surface of the semiconductor substrate to cover the pad electrode and a via hole formed in the semiconductor substrate and extending from a back surface of the semiconductor substrate to the pad electrode, wherein an aperture of the via hole at a portion close to the pad electrode is larger than an aperture of the via hole at a portion close to the back surface of the semiconductor substrate.

Abstract: A manufacturing method of a semiconductor device having a through-hole electrode is offered to improve reliability and yield of the semiconductor device. A via hole penetrating through a semiconductor substrate is formed at a location corresponding to a pad electrode. An insulation film is formed on a back surface of the semiconductor substrate and a surface of the via hole. A reinforcing insulation film having an overhung portion at a rim of the via hole is formed on the back surface of the semiconductor substrate. The insulation film on a bottom of the via hole is removed by etching using the reinforcing insulation film as a mask, while the insulation film on a side wall of the via hole remains. The through-hole electrode, a wiring layer and a conductive terminal are formed on the back surface of the semiconductor substrate and the via hole. Finally, the semiconductor substrate is divided into a plurality of semiconductor dice by dicing.

Abstract: This invention offers a manufacturing method to reduce a manufacturing cost of a semiconductor device having a through-hole electrode by simplifying a manufacturing process and to enhance yield of the semiconductor device. A first insulation film is formed on a top surface of a semiconductor substrate. A part of the first insulation film is etched to form an opening in which a part of the semiconductor substrate is exposed. Then a pad electrode is formed in the opening and on the first insulation film. A second insulation film is formed on a back surface of the semiconductor substrate. Then a via hole having an aperture larger than the opening is formed. And a third insulation film is formed in the via hole and on the second insulation film. The third insulation film on a bottom of the via hole is etched to expose the pad electrode. After that, a through-hole electrode and a wiring layer are formed in the via hole.

Abstract: A manufacturing method of a semiconductor device having a through-hole electrode is offered to improve reliability and yield of the semiconductor device. A via hole penetrating through a semiconductor substrate is formed at a location corresponding to a pad electrode. An insulation film is formed on a back surface of the semiconductor substrate and a surface of the via hole. A reinforcing insulation film having an overhung portion at a rim of the via hole is formed on the back surface of the semiconductor substrate. The insulation film on a bottom of the via hole is removed by etching using the reinforcing insulation film as a mask, while the insulation film on a side wall of the via hole remains. The through-hole electrode, a wiring layer and a conductive terminal are formed on the back surface of the semiconductor substrate and the via hole. Finally, the semiconductor substrate is divided into a plurality of semiconductor dice by dicing.

Abstract: A phthalocyanine compound represented by the following general formula (I) and the mixture thereof, and an optical recording medium containing the compound/mixture in its recording layer. wherein in formula (I), M is two hydrogen atoms, a divalent metal atom, a mono-substituted trivalent metal atom, a di-substituted tetravalent metal atom, or an oxymetal, and L1, L2, L3 and L4 are each independently formula (a), formula (b), or formula (c): wherein X, Y, Z and R are defined.