Abstract: A semiconductor device with improved reliability and its manufacturing method is offered. The semiconductor device of this invention includes a semiconductor substrate, a pad electrode formed on the semiconductor substrate through an insulation layer made of silicon oxide, silicon nitride or the like, a supporting plate bonded to a top surface of the semiconductor substrate to cover the pad electrode and a via hole formed in the semiconductor substrate and extending from a back surface of the semiconductor substrate to the pad electrode, wherein an aperture of the via hole at a portion close to the pad electrode is larger than an aperture of the via hole at a portion close to the back surface of the semiconductor substrate.

Abstract: The invention relates to a novel phthalocyanine compound which absorbs in a near-infrared region of 700˜1000 nm with little absorption in the visible region of the spectrum and can be applied with advantage to a near-infrared light-absorbing filter for plasma display, a secret ink and other applications and to a process for producing the phthalocyanine compound. The above phthalocyanine compound has the following general formula (I). A near-infrared light-absorbing material containing the same is also provided.

Abstract: A photothermal conversion material showing high sensitivity to the light of a semiconductor laser having an emission frequency band of 750 nm.about.900 nm with a high photothermal conversion efficiency and a planographic original plate fabricated by using the transducer are provided. This photothermal conversion material comprises a phthalocyanine compound of the following general formula (I) ##STR1## wherein R.sub.1 .about.R.sub.8 each represents alkyl or alkoxyalkyl; X.sub.1 .about.X.sub.8 each represents sulfur or NR.sub.9, where R.sub.9 is hydrogen or alkyl.

Abstract: A resistance temperature detector measures the temperature of fluid flowing through a pipe at a given point in the pipe. In the temperature detector, normal and backup temperature sensing resistance elements are secured with inorganic adhesive onto an inner wall surface of a thin-walled tubular sheath having its tip end closed. These temperature sensing resistance elements are disposed in spaced parallel relationship and are respectively connected to insulated lead wires separately disposed within the resistance temperature detector. The resistance temperature detector also includes a sheath cable assembly having sheathed cables, each of which is electrically connected to a respective one of the insulated lead wires and secured to the other end of the tubular sheath. Thereby a sealed vacant space is defined within the temperature sensing assembly.