Patents by Inventor Hiroshi Tsuge

Hiroshi Tsuge has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10711369
    Abstract: The present invention provides a method for producing an SiC single crystal, enabling obtaining an SiC single crystal substrate in which a screw dislocation-reduced region is ensured in a wide range, and an SiC single crystal substrate. The SiC single crystal substrate is produced using a seed crystal having an off angle in the off orientation from a {0001} plane by a production method wherein in advance of a growth main step of performing crystal growth to form a facet {0001} plane in the crystal peripheral part on the crystal end face having grown thereon the bulk silicon carbide single crystal and obtain more than 50% of the thickness of the obtained SiC single crystal, a growth sub-step of growing the crystal at a higher nitrogen concentration than in the growth main step and at a growth atmosphere pressure of 3.9 to 39.9 kPa and a seed crystal temperature of 2,100° C. to less than 2,300° C. is included.
    Type: Grant
    Filed: December 4, 2015
    Date of Patent: July 14, 2020
    Assignee: SHOWA DENKO K.K.
    Inventors: Shinya Sato, Tatsuo Fujimoto, Masakazu Katsuno, Hiroshi Tsuge, Masashi Nakabayashi
  • Patent number: 10699639
    Abstract: An EL display apparatus is provided. A display screen includes pixels arranged in a matrix, with each pixel including an EL device and a pixel circuit. A source driver circuit is configured to output an analog video signal to each pixel. A gate driver circuit is on at least one side of the display screen, with the gate driver circuit including first and second gate driver circuits. Each pixel includes a driving transistor, a first switch transistor, and a second switch transistor. A gate terminal of the first switch transistor is connected to a first gate signal line of the first gate driver circuit, and a gate terminal of the second switch transistor is connected to a second gate signal line of the second gate driver circuit. The first and second switch transistors are on/off controlled, independently, by the first and second gate driver circuits.
    Type: Grant
    Filed: December 13, 2019
    Date of Patent: June 30, 2020
    Assignee: JOLED INC.
    Inventors: Hiroshi Takahara, Hitoshi Tsuge
  • Publication number: 20200135103
    Abstract: An EL display apparatus is provided. A display screen includes pixels arranged in a matrix, with each pixel including an EL device and a pixel circuit. A source driver circuit is configured to output an analog video signal to each pixel. A gate driver circuit is on at least one side of the display screen, with the gate driver circuit including first and second gate driver circuits. Each pixel includes a driving transistor, a first switch transistor, and a second switch transistor. A gate terminal of the first switch transistor is connected to a first gate signal line of the first gate driver circuit, and a gate terminal of the second switch transistor is connected to a second gate signal line of the second gate driver circuit. The first and second switch transistors are on/off controlled, independently, by the first and second gate driver circuits.
    Type: Application
    Filed: December 13, 2019
    Publication date: April 30, 2020
    Applicant: JOLED INC.
    Inventors: Hiroshi TAKAHARA, Hitoshi TSUGE
  • Patent number: 10553158
    Abstract: An electroluminescent (EL) display apparatus and corresponding method of control are provided. A display screen includes gate signal lines which are arranged to intersect source signal lines. A pixel provided with an EL device corresponds to each intersection of the gate signal lines and the source signal lines. A driving transistor is provided for each pixel to supply a current to the EL device. A first switch transistor is provided for each pixel on a current path through which the current is supplied to the EL device. A gate driver circuit is connected to the gate signal lines. The gate driver circuit is configured to turn the first switch transistor on and off to simultaneously generate band-shaped non-display regions and band-shaped display regions on the display screen and to move the band-shaped non-display regions and the band-shaped display regions relative to the display screen.
    Type: Grant
    Filed: October 5, 2018
    Date of Patent: February 4, 2020
    Assignee: JOLED INC.
    Inventors: Hiroshi Takahara, Hitoshi Tsuge
  • Patent number: 10453395
    Abstract: An electroluminescent (EL) display apparatus and method of controlling are provided. A display screen includes gate and source signal lines. A pixel corresponds to each intersection of the gate and source signal lines. Each pixel includes: an EL device including anode and cathode terminals, the cathode terminal being connected to a common reference voltage; a driving transistor to flow a current to the EL device; a first switch transistor provided on a current path through which the current flows from a power line through the driving transistor to the EL device; a second switch transistor to supply, to the driving transistor, an image signal from one source signal line; and a third switch transistor provided between the anode terminal of the EL device and a voltage line. The voltage line is configured to supply a reverse bias voltage for reverse biasing the anode terminal of the EL device.
    Type: Grant
    Filed: May 30, 2018
    Date of Patent: October 22, 2019
    Assignee: JOLED INC.
    Inventors: Hiroshi Takahara, Hitoshi Tsuge
  • Publication number: 20190272658
    Abstract: It is intended to easily generate an edited image from which various and natural feelings are obtained. Depth information of pixels in an image which is set as a processing object is used therefor. Reference depth information serving as a comparison reference for the depth information of pixels in image processing is set. In addition, an image editing process is performed using the reference depth information and the depth information of the pixels of the image which is set as the processing object.
    Type: Application
    Filed: September 25, 2017
    Publication date: September 5, 2019
    Inventors: MASAHIRO TAKAHASHI, TAKAHIRO TSUGE, HIDENORI KARASAWA, HIROMI IIZUKA, RYO MIYAKE, HIROSHI NAKAYAMA
  • Patent number: 10347183
    Abstract: An electroluminescent (EL) display apparatus and corresponding method of control are provided. A display screen includes gate signal lines which are arranged to intersect source signal lines. A pixel provided with an EL device corresponds to each intersection of the gate signal lines and the source signal lines. A driving transistor is provided for each pixel to supply a current to the EL device. A first switch transistor is provided for each pixel on a current path through which the current is supplied to the EL device. A gate driver circuit is connected to the gate signal lines. The gate driver circuit is configured to turn the first switch transistor on and off to simultaneously generate band-shaped non-display regions and band-shaped display regions on the display screen and to move the band-shaped non-display regions and the band-shaped display regions relative to the display screen.
    Type: Grant
    Filed: October 10, 2018
    Date of Patent: July 9, 2019
    Assignee: JOLED INC.
    Inventors: Hiroshi Takahara, Hitoshi Tsuge
  • Publication number: 20190024257
    Abstract: Provided are: a silicon carbide single crystal substrate which is cut out from a silicon carbide bulk single crystal grown by the Physical Vapor Transport method; and a process for producing the same. The number of screw dislocations in one of the semicircle areas of the substrate is smaller than that in the other thereof, namely, the number of screw dislocations in a given area of the substrate is reduced. The semicircle areas of the substrate correspond respectively to the halves of the substrate.
    Type: Application
    Filed: September 24, 2018
    Publication date: January 24, 2019
    Applicant: SHOWA DENKO K.K.
    Inventors: Shinya SATO, Tatsuo FUJIMOTO, Hiroshi TSUGE, Masakazu KATSUNO
  • Patent number: 10119200
    Abstract: Provided are: a silicon carbide single crystal substrate which is cut out from a silicon carbide bulk single crystal grown by the Physical Vapor Transport method; and a process for producing the same. The number of screw dislocations in one of the semicircle areas of the substrate is smaller than that in the other thereof, namely, the number of screw dislocations in a given area of the substrate is reduced. The semicircle areas of the substrate correspond respectively to the halves of the substrate.
    Type: Grant
    Filed: November 15, 2013
    Date of Patent: November 6, 2018
    Assignee: SHOWA DENKO K.K.
    Inventors: Shinya Sato, Tatsuo Fujimoto, Hiroshi Tsuge, Masakazu Katsuno
  • Patent number: 10066316
    Abstract: The present invention provides a method of raising the rate of reduction of the dislocation density accompanying growth of an SiC single crystal to counter the increase in the threading screw dislocations formed near the interface of the seed crystal and grown SiC single crystal and thereby produce an SiC single-crystal ingot with a small threading screw dislocation density from the initial stage of growth.
    Type: Grant
    Filed: February 18, 2016
    Date of Patent: September 4, 2018
    Assignee: SHOWA DENKO K.K.
    Inventors: Komomo Tani, Takayuki Yano, Tatsuo Fujimoto, Hiroshi Tsuge, Kazuhito Kamei, Kazuhiko Kusunoki, Kazuaki Seki
  • Publication number: 20180066380
    Abstract: The present invention provides a method of raising the rate of reduction of the dislocation density accompanying growth of an SiC single crystal to counter the increase in the threading screw dislocations formed near the interface of the seed crystal and grown SiC single crystal and thereby produce an SiC single-crystal ingot with a small threading screw dislocation density from the initial stage of growth.
    Type: Application
    Filed: February 18, 2016
    Publication date: March 8, 2018
    Applicant: NIPPON STEEL & SUMITOMO METAL CORPORATION
    Inventors: Komomo TANI, Takayuki YANO, Tatsuo FUJIMOTO, Hiroshi TSUGE, Kazuhito KAMEI, Kazuhiko KUSUNOKI, Kazuaki SEKI
  • Publication number: 20170342593
    Abstract: The present invention provides a method for producing an SiC single crystal, enabling obtaining an SiC single crystal substrate in which a screw dislocation-reduced region is ensured in a wide range, and an SiC single crystal substrate. The SiC single crystal substrate is produced using a seed crystal having an off angle in the off orientation from a {0001} plane by a production method wherein in advance of a growth main step of performing crystal growth to form a facet {0001} plane in the crystal peripheral part on the crystal end face having grown thereon the bulk silicon carbide single crystal and obtain more than 50% of the thickness of the obtained SiC single crystal, a growth sub-step of growing the crystal at a higher nitrogen concentration than in the growth main step and at a growth atmosphere pressure of 3.9 to 39.9 kPa and a seed crystal temperature of 2,100° C. to less than 2,300° C. is included.
    Type: Application
    Filed: December 4, 2015
    Publication date: November 30, 2017
    Applicant: NIPPON STEEL & SUMITOMO METAL CORPORATION
    Inventors: Shinya SATO, Tatsuo FUJIMOTO, Masakazu KATSUNO, Hiroshi TSUGE, Masashi NAKABAYASHI
  • Patent number: 9777403
    Abstract: A single-crystal silicon carbide and a single-crystal silicon carbide wafer of good-quality are disclosed that are low in dislocations, micropipes and other crystal defects and enable high yield and high performance when applied to a device, wherein the ratio of doping element concentrations on opposite sides in the direction of crystal growth of the interface between the seed crystal and the grown crystal is 5 or less and the doping element concentration of the grown crystal in the vicinity of the seed crystal is 2×1019 cm?3 to 6×1020 cm?3.
    Type: Grant
    Filed: October 14, 2009
    Date of Patent: October 3, 2017
    Assignee: NIPPON STEEL & SUMITOMO METAL CORPORATION
    Inventors: Masashi Nakabayashi, Tatsuo Fujimoto, Masakazu Katsuno, Hiroshi Tsuge
  • Patent number: 9691607
    Abstract: Disclosed is a process for producing an epitaxial single-crystal silicon carbide substrate by epitaxially growing a silicon carbide film on a single-crystal silicon carbide substrate by chemical vapor deposition. The step of crystal growth in the process comprises a main crystal growth step, which mainly occupies the period of epitaxial growth, and a secondary crystal growth step, in which the growth temperature is switched between a set growth temperature (T0) and a set growth temperature (T2) which are respectively lower and higher than a growth temperature (T1) used in the main crystal growth step. The basal plane dislocations of the single-crystal silicon carbide substrate are inhibited from being transferred to the epitaxial film. Thus, a high-quality epitaxial film is formed.
    Type: Grant
    Filed: April 7, 2011
    Date of Patent: June 27, 2017
    Assignee: NIPPON STEEL & SUMITOMO METAL CORPORATION
    Inventors: Takashi Aigo, Hiroshi Tsuge, Taizo Hoshino, Tatsuo Fujimoto, Masakazu Katsuno, Masashi Nakabayashi, Hirokatsu Yashiro
  • Patent number: 9590479
    Abstract: Disclosed is a stator for a rotating electrical machine, which includes a stator core having a plurality of slots, and a plurality of coils. Each of the coils has a first inserting section and a second inserting section, which are inserted into two slots which form a pair, a first coil end, and a second coil end. The first and/or the second coil end has a twisted portion and a bent portion. The twisted portion is formed by twisting the coil end at a part close to the first inserting section. The bent portion is formed by bending, at a part close to the second inserting section, the coil end such that the coil end is laid flat.
    Type: Grant
    Filed: March 8, 2011
    Date of Patent: March 7, 2017
    Assignee: KABUSHIKI KAISHA TOYOTA JIDOSHOKKI
    Inventors: Hiroshi Tsuge, Kazuyuki Yamaguchi
  • Patent number: 9248529
    Abstract: An assembling apparatus (1) comprises a shaft member (3) having a linear assembling function and a rotational assembling function, a base (2) supporting the shaft member (3) to be movable in the axial direction and rotatable axially, and a drive unit moving in an axial direction and axially rotating the shaft member (3).
    Type: Grant
    Filed: May 9, 2011
    Date of Patent: February 2, 2016
    Assignee: KABUSHIKI KAISHA TOYOTA JIDOSHOKKI
    Inventors: Noriyasu Watanabe, Hirotsugu Miyaki, Hiroshi Tsuge, Kazuyuki Yamaguchi
  • Patent number: 9234297
    Abstract: Provided are a method for manufacturing a SiC single crystal having high crystal quality and, in particular, extremely low screw dislocation density and a SiC single crystal ingot obtained by the method. In particular, provided is a silicon carbide single crystal substrate that is a substrate cut from a bulk silicon carbide single crystal grown by the Physical Vapior Transport (PVT) method, in which the screw dislocation density is smaller in the peripheral region than in the center region, so that screw dislocations are partially reduced. The method is a method for manufacturing a SiC single crystal by the PVT method using a seed crystal and the ingot is a SiC single crystal ingot obtained by the method. Particularly, the silicon carbide single crystal substrate is a silicon carbide single crystal substrate in which when, by representing the diameter of the substrate as R, a center circle region having a diameter of 0.
    Type: Grant
    Filed: August 29, 2012
    Date of Patent: January 12, 2016
    Assignee: NIPPON STEEL & SUMITOMO METAL CORPORATION
    Inventors: Shinya Sato, Tatsuo Fujimoto, Hiroshi Tsuge, Masakazu Katsuno
  • Publication number: 20150267319
    Abstract: Provided are: a silicon carbide single crystal substrate which is cut out from a silicon carbide bulk single crystal grown by the Physical Vapor Transport method; and a process for producing the same. The number of screw dislocations in one of the semicircle areas of the substrate is smaller than that in the other thereof, namely, the number of screw dislocations in a given area of the substrate is reduced. The semicircle areas of the substrate correspond respectively to the halves of the substrate.
    Type: Application
    Filed: November 15, 2013
    Publication date: September 24, 2015
    Applicant: NIPPON STEEL & SUMITOMO METAL CORPORATION
    Inventors: Shinya Sato, Tatsuo Fujimoto, Hiroshi Tsuge, Masakazu Katsuno
  • Patent number: 9068277
    Abstract: The invention provides an apparatus for manufacturing good quality single-crystal silicon carbide stably without formation of cracks and the like, which apparatus comprises: at least a crucible for accommodating silicon carbide feedstock powder and seed crystal; heat insulation material installed around the crucible; and a heating device for heating the crucible, wherein the outer profile of the crucible includes at least one region of narrower diameter than a vertically adjacent region, insulation material is also installed in the space left by the diameter difference, and thickness of the insulation material at the narrower diameter region is greater than that of the insulation material at the vertically adjacent region. The apparatus for manufacturing single-crystal silicon carbide enables precise control of the temperature gradient inside the crucible, thereby enabling manufacture of good quality single-crystal silicon carbide.
    Type: Grant
    Filed: April 1, 2009
    Date of Patent: June 30, 2015
    Assignee: NIPPON STEEL & SUMITOMO METAL CORPORATION
    Inventors: Masashi Nakabayashi, Tatsuo Fujimoto, Hiroshi Tsuge, Masakazu Katsuno, Noboru Ohtani
  • Publication number: 20150075422
    Abstract: The present invention provides an epitaxial SiC monocrystalline substrate having a high quality epitaxial film suppressed in occurrence of step bunching in epitaxial growth using a substrate with an off angle of 6° or less and a method of production of the same, that is, an epitaxial silicon carbide monocrystalline substrate comprised of a silicon carbide monocrystalline substrate with an off angle of 6° or less on which a silicon carbide monocrystalline thin film is formed, the epitaxial silicon carbide monocrystalline substrate characterized in that the silicon carbide monocrystalline thin film has a surface with a surface roughness (Ra value) of 0.5 nm or less and a method of production of the same.
    Type: Application
    Filed: November 19, 2014
    Publication date: March 19, 2015
    Inventors: Takashi Aigo, Hiroshi Tsuge, Taizo Hoshino, Tatsuo Fujimoto, Masakasu Katsuno, Masashi Nakabayashi, Hirokatsu Yashiro