Patents by Inventor Hiroshi Tsuge

Hiroshi Tsuge has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20150075422
    Abstract: The present invention provides an epitaxial SiC monocrystalline substrate having a high quality epitaxial film suppressed in occurrence of step bunching in epitaxial growth using a substrate with an off angle of 6° or less and a method of production of the same, that is, an epitaxial silicon carbide monocrystalline substrate comprised of a silicon carbide monocrystalline substrate with an off angle of 6° or less on which a silicon carbide monocrystalline thin film is formed, the epitaxial silicon carbide monocrystalline substrate characterized in that the silicon carbide monocrystalline thin film has a surface with a surface roughness (Ra value) of 0.5 nm or less and a method of production of the same.
    Type: Application
    Filed: November 19, 2014
    Publication date: March 19, 2015
    Inventors: Takashi Aigo, Hiroshi Tsuge, Taizo Hoshino, Tatsuo Fujimoto, Masakasu Katsuno, Masashi Nakabayashi, Hirokatsu Yashiro
  • Patent number: 8936680
    Abstract: The present invention, which provides a crucible for producing single-crystal silicon carbide, and a production apparatus and a production method for single-crystal silicon carbide, which are capable of stably growing a single-crystal silicon carbide ingot good in crystallinity at high yield, is a crucible for producing single-crystal silicon carbide having a crucible vessel for holding silicon carbide raw material and a crucible cover for attaching a seed crystal and is adapted to sublimate a silicon carbide raw material in the crucible vessel to supply silicon carbide sublimation gas onto a seed crystal attached to the crucible cover and grow single-crystal silicon carbide on the seed crystal, which crucible for producing single-crystal silicon carbide is provided in the crucible vessel and the crucible cover with threaded portions to be screwed together and is provided with a sublimation gas discharge groove or grooves capable of regulating flow rate by relative rotation of the threaded portions; and is a
    Type: Grant
    Filed: February 25, 2010
    Date of Patent: January 20, 2015
    Assignee: Nippon Steel & Sumitomo Metal Corporation
    Inventors: Masakazu Katsuno, Tatsuo Fujimoto, Hiroshi Tsuge, Masashi Nakabayashi
  • Patent number: 8927396
    Abstract: An object of the present invention is to provide a production process of an epitaxial silicon carbide single crystal substrate having a high-quality silicon carbide single crystal thin film reduced in the surface defect and the like on a silicon carbide single crystal substrate with a small off-angle. According to the present invention, in the production process of an epitaxial silicon carbide single crystal substrate having a high-quality silicon carbide single crystal thin film reduced in the surface defect and the like on a silicon carbide single crystal substrate with an off-angle of 4° or less, pretreatment etching to a depth of 0.1 to 1 ?m is performed at a temperature of 1,550 to 1,650° C. by flowing a gas containing silicon and chlorine together with a hydrogen gas such that the silicon atom concentration becomes from 0.0001 to 0.01% based on hydrogen atoms in the hydrogen gas, and thereafter, an epitaxial layer is formed.
    Type: Grant
    Filed: November 15, 2011
    Date of Patent: January 6, 2015
    Assignee: Nippon Steel & Sumitomo Metal Corporation
    Inventors: Takashi Aigo, Hiroshi Tsuge, Masakazu Katsuno, Tatsuo Fujimoto, Hirokatsu Yashiro
  • Publication number: 20140363607
    Abstract: Provided are a method for manufacturing a SiC single crystal having high crystal quality and, in particular, extremely low screw dislocation density and a SiC single crystal ingot obtained by the method. In particular, provided is a silicon carbide single crystal substrate that is a substrate cut from a bulk silicon carbide single crystal grown by the Physical Vapior Transport (PVT) method, in which the screw dislocation density is smaller in the peripheral region than in the center region, so that screw dislocations are partially reduced. The method is a method for manufacturing a SiC single crystal by the PVT method using a seed crystal and the ingot is a SiC single crystal ingot obtained by the method. Particularly, the silicon carbide single crystal substrate is a silicon carbide single crystal substrate in which when, by representing the diameter of the substrate as R, a center circle region having a diameter of 0.
    Type: Application
    Filed: August 29, 2012
    Publication date: December 11, 2014
    Applicant: NIPPON STEEL & SUMITOMO METAL CORPORATION
    Inventors: Shinya Sato, Tatsuo Fujimoto, Hiroshi Tsuge, Masakazu Katsuno
  • Patent number: 8901570
    Abstract: Provided is an epitaxial silicon carbide single-crystal substrate in which a silicon carbide epitaxial film having excellent in-plane uniformity of doping density is disposed on a silicon carbide single-crystal substrate having an off angle that is between 1° to 6°. The epitaxial film is grown by repeating a dope layer that is 0.5 ?m or less and a non-dope layer that is 0.1 ?m or less. The dope layer is formed with the ratio of the number of carbon atoms to the number of silicon atoms (C/Si ratio) in a material gas being 1.5 to 2.0, and the non-dope layer is formed with the C/Si ratio being 0.5 or more but less than 1.5. The resulting epitaxial silicon carbide single-crystal substrate comprises a high-quality silicon carbide epitaxial film, which has excellent in-plane uniformity of doping density, on a silicon carbide single-crystal substrate having a small off angle.
    Type: Grant
    Filed: May 10, 2011
    Date of Patent: December 2, 2014
    Assignee: Nippon Steel & Sumitomo Metal Corporation
    Inventors: Takashi Aigo, Hiroshi Tsuge, Taizo Hoshino, Tatsuo Fujimoto, Masakazu Katsuno, Masashi Nakabayashi, Hirokatsu Yashiro
  • Publication number: 20130320357
    Abstract: Provided are an epitaxial silicon carbide single crystal substrate having a high-quality silicon carbide single crystal thin film with less stacking faults on a silicon carbide single crystal substrate and a production method therefor. The epitaxial silicon carbide single crystal substrate is produced by growing a silicon carbide epitaxial layer on a silicon carbide single crystal substrate having an off-angle of 4° or less so that the number of stacking faults emitting light at wavelengths ranging from 400 to 600 nm by photoluminescence on the substrate is less than 10/cm2 in total. Additionally, the method for producing the epitaxial silicon carbide single crystal substrate forms the epitaxial layer by using chlorosilane as a silicon-based material gas and hydrocarbon gas as a carbon-based gas, at a growth temperature of 1600° C. to 1700° C., at a C/Si ratio of 0.5 to 1.0, and at a growth rate of 1 to 3 ?m/hr.
    Type: Application
    Filed: April 20, 2012
    Publication date: December 5, 2013
    Applicant: NIPPON STEEL & SUMITOMO METAL CORPORATION
    Inventors: Takashi Aigo, Hiroshi Tsuge, Masakazu Katsuno, Tatsuo Fujimoto, Hirokatsu Yashiro, Wataru Ito
  • Publication number: 20130217213
    Abstract: An object of the present invention is to provide a production process of an epitaxial silicon carbide single crystal substrate having a high-quality silicon carbide single crystal thin film reduced in the surface defect and the like on a silicon carbide single crystal substrate with a small off-angle. According to the present invention, in the production process of an epitaxial silicon carbide single crystal substrate having a high-quality silicon carbide single crystal thin film reduced in the surface defect and the like on a silicon carbide single crystal substrate with an off-angle of 4° or less, pretreatment etching to a depth of 0.1 to 1 ?m is performed at a temperature of 1,550 to 1,650° C. by flowing a gas containing silicon and chlorine together with a hydrogen gas such that the silicon atom concentration becomes from 0.0001 to 0.01% based on hydrogen atoms in the hydrogen gas, and thereafter, an epitaxial layer is formed.
    Type: Application
    Filed: November 15, 2011
    Publication date: August 22, 2013
    Applicant: NIPPON STEEL & SUMITOMO METAL CORPORATION
    Inventors: Takashi Aigo, Hiroshi Tsuge, Masakazu Katsuno, Tatsuo Fujimoto, Hirokatsu Yashiro
  • Publication number: 20130145614
    Abstract: An assembling apparatus (1) comprises a shaft member (3) having a linear assembling function and a rotational assembling function, a base (2) supporting the shaft member (3) to be movable in the axial direction and rotatable axially, and a drive unit moving in an axial direction and axially rotating the shaft member (3).
    Type: Application
    Filed: May 9, 2011
    Publication date: June 13, 2013
    Applicant: KABUSHIKI KAISHA TOYOTA JIDOSHOKKI
    Inventors: Noriyasu Watanabe, Hirotsugu Miyaki, Hiroshi Tsuge, Kazuyuki Yamaguchi
  • Publication number: 20130049014
    Abstract: Provided is an epitaxial silicon carbide single-crystal substrate in which a silicon carbide epitaxial film having excellent in-plane uniformity of doping density is disposed on a silicon carbide single-crystal substrate having an off angle that is between 1° to 6°. The epitaxial film is grown by repeating a dope layer that is 0.5 ?m or less and a non-dope layer that is 0.1 ?m or less. The dope layer is formed with the ratio of the number of carbon atoms to the number of silicon atoms (C/Si ratio) in a material gas being 1.5 to 2.0, and the non-dope layer is formed with the C/Si ratio being 0.5 or more but less than 1.5. The resulting epitaxial silicon carbide single-crystal substrate comprises a high-quality silicon carbide epitaxial film, which has excellent in-plane uniformity of doping density, on a silicon carbide single-crystal substrate having a small off angle.
    Type: Application
    Filed: May 10, 2011
    Publication date: February 28, 2013
    Applicant: NIPPON STEEL CORPORATION
    Inventors: Takashi Aigo, Hiroshi Tsuge, Taizo Hoshino, Tatsuo Fujimoto, Masakazu Katsuno, Masashi Nakabayashi, Hirokatsu Yashiro
  • Publication number: 20130029158
    Abstract: Disclosed is a process for producing an epitaxial single-crystal silicon carbide substrate by epitaxially growing a silicon carbide film on a single-crystal silicon carbide substrate by chemical vapor deposition. The step of crystal growth in the process comprises a main crystal growth step, which mainly occupies the period of epitaxial growth, and a secondary crystal growth step, in which the growth temperature is switched between a set growth temperature (T0) and a set growth temperature (T2) which are respectively lower and higher than a growth temperature (T1) used in the main crystal growth step. The basal plane dislocations of the single-crystal silicon carbide substrate are inhibited from being transferred to the epitaxial film. Thus, a high-quality epitaxial film is formed.
    Type: Application
    Filed: April 7, 2011
    Publication date: January 31, 2013
    Applicant: NIPPON STEEL CORPORATION
    Inventors: Takashi Aigo, Hiroshi Tsuge, Taizo Hoshino, Tatsuo Fujimoto, Masakazu Katsuno, Masashi Nakabayashi, Hirokatsu Yashiro
  • Publication number: 20130009509
    Abstract: Disclosed is a stator for a rotating electrical machine, which includes a stator core having a plurality of slots, and a plurality of coils. Each of the coils has a first inserting section and a second inserting section, which are inserted into two slots which form a pair, a first coil end, and a second coil end. The first and/or the second coil end has a twisted portion and a bent portion. The twisted portion is formed by twisting the coil end at a part close to the first inserting section. The bent portion is formed by bending, at a part close to the second inserting section, the coil end such that the coil end is laid flat.
    Type: Application
    Filed: March 8, 2011
    Publication date: January 10, 2013
    Applicant: KABUSHIKI KAISHA TOYOTA JIDOSHOKKI
    Inventors: Hiroshi Tsuge, Kazuyuki Yamaguchi
  • Publication number: 20110308449
    Abstract: The present invention, which provides a crucible for producing single-crystal silicon carbide, and a production apparatus and a production method for single-crystal silicon carbide, which are capable of stably growing a single-crystal silicon carbide ingot good in crystallinity at high yield, is a crucible for producing single-crystal silicon carbide having a crucible vessel for holding silicon carbide raw material and a crucible cover for attaching a seed crystal and is adapted to sublimate a silicon carbide raw material in the crucible vessel to supply silicon carbide sublimation gas onto a seed crystal attached to the crucible cover and grow single-crystal silicon carbide on the seed crystal, which crucible for producing single-crystal silicon carbide is provided in the crucible vessel and the crucible cover with threaded portions to be screwed together and is provided with a sublimation gas discharge groove or grooves capable of regulating flow rate by relative rotation of the threaded portions; and is a
    Type: Application
    Filed: February 25, 2010
    Publication date: December 22, 2011
    Inventors: Masakazu Katsuno, Tatsuo Fujimoto, Hiroshi Tsuge, Masashi Nakabayashi
  • Publication number: 20110278596
    Abstract: The present invention provides an epitaxial SiC monocrystalline substrate having a high quality epitaxial film suppressed in occurrence of step bunching in epitaxial growth using a substrate with an off angle of 6° or less and a method of production of the same, that is, an epitaxial silicon carbide monocrystalline substrate comprised of a silicon carbide monocrystalline substrate with an off angle of 6° or less on which a silicon carbide monocrystalline thin film is formed, the epitaxial silicon carbide monocrystalline substrate characterized in that the silicon carbide monocrystalline thin film has a surface with a surface roughness (Ra value) of 0.5 nm or less and a method of production of the same.
    Type: Application
    Filed: January 29, 2010
    Publication date: November 17, 2011
    Inventors: Takashi Aigo, Hiroshi Tsuge, Taizo Hoshino, Tatsuo Fujimoto, Masakasu Katsuno, Masashi Nakabayashi, Hirokatsu Yashiro
  • Patent number: 8044408
    Abstract: The invention provides a high-quality SiC single-crystal substrate, a seed crystal for producing the high-quality SiC single-crystal substrate, and a method of producing the high-quality SiC single-crystal substrate, which enable improvement of device yield and stability. Provided is an SiC single-crystal substrate wherein, when the SiC single-crystal substrate is divided into 5-mm square regions, such regions in which dislocation pairs or dislocation rows having intervals between their dislocation end positions of 5 ?m or less are present among the dislocations that have ends at the substrate surface account for 50% or less of all such regions within the substrate surface and the dislocation density in the substrate of dislocations other than the dislocation pairs or dislocation is 8,000/cm2.
    Type: Grant
    Filed: May 20, 2009
    Date of Patent: October 25, 2011
    Assignee: Nippon Steel Corporation
    Inventors: Tatsuo Fujimoto, Kohei Tatsumi, Taizo Hoshino, Masakazu Katsuno, Noboru Ohtani, Masashi Nakabayashi, Hiroshi Tsuge, Housei Hirano, Hirokatsu Yashiro
  • Publication number: 20110206929
    Abstract: The present invention provides single-crystal silicon carbide and a single-crystal silicon carbide wafer of good-quality that are low in dislocations, micropipes and other crystal defects and enable high yield and high performance when applied to a device, wherein the ratio of doping element concentrations on opposite sides in the direction of crystal growth of the interface between the seed crystal and the grown crystal is 5 or less and the doping element concentration of the grown crystal in the vicinity of the seed crystal is 2×1019 cm?3 to 6×1020 cm?3.
    Type: Application
    Filed: October 14, 2009
    Publication date: August 25, 2011
    Inventors: Masashi Nakabayashi, Tatsuo Fujimoto, Masakazu Katsuno, Hiroshi Tsuge
  • Patent number: 7972704
    Abstract: The present invention provides a single-crystal silicon carbide ingot capable of providing a good-quality substrate low in dislocation defects, and a substrate and epitaxial wafer obtained therefrom. It is a single-crystal silicon carbide ingot comprising single-crystal silicon carbide which contains donor-type impurity at a concentration of 2×1018 cm?3 to 6×1020 cm?3 and acceptor-type impurity at a concentration of 1×1018 cm?3 to 5.99×1020 cm?3 and wherein the concentration of the donor-type impurity is greater than the concentration of the acceptor-type impurity and the difference is 1×1018 cm?3 to 5.99×1020 cm?3, and a substrate and epitaxial wafer obtained therefrom.
    Type: Grant
    Filed: January 14, 2009
    Date of Patent: July 5, 2011
    Assignee: Nippon Steel Corporation
    Inventors: Noboru Ohtani, Masakazu Katsuno, Hiroshi Tsuge, Masashi Nakabayashi, Tatsuo Fujimoto
  • Publication number: 20100295059
    Abstract: The invention provides a high-quality SiC single-crystal substrate, a seed crystal for producing the high-quality SiC single-crystal substrate, and a method of producing the high-quality SiC single-crystal substrate, which enable improvement of device yield and stability. Provided is an SiC single-crystal substrate wherein, when the SiC single-crystal substrate is divided into 5-mm square regions, such regions in which dislocation pairs or dislocation rows having intervals between their dislocation end positions of 5 ?m or less are present among the dislocations that have ends at the substrate surface account for 50% or less of all such regions within the substrate surface and the dislocation density in the substrate of dislocations other than the dislocation pairs or dislocation is 8,000/cm2.
    Type: Application
    Filed: May 20, 2009
    Publication date: November 25, 2010
    Applicant: NIPPON STEEL CORPORATION
    Inventors: Tatsuo FUJIMOTO, Kohei TATSUMI, Taizo HOSHINO, Masakazu KATSUNO, Noboru OHTANI, Masashi NAKABAYASHI, Hiroshi TSUGE, Housei HIRANO, Hirokatsu YASHIRO
  • Publication number: 20100289033
    Abstract: The present invention provides a single-crystal silicon carbide ingot capable of providing a good-quality substrate low in dislocation defects, and a substrate and epitaxial wafer obtained therefrom. It is a single-crystal silicon carbide ingot comprising single-crystal silicon carbide which contains donor-type impurity at a concentration of 2×1018 cm?3 to 6×1020 cm3 and acceptor-type impurity at a concentration of 1×1018 cm?3 to 5.99×1020 cm?3 and wherein the concentration of the donor-type impurity is greater than the concentration of the acceptor-type impurity and the difference is 1×1018 cm?3 to 5.99×1020 cm?3, and a substrate and epitaxial wafer obtained therefrom.
    Type: Application
    Filed: January 14, 2009
    Publication date: November 18, 2010
    Inventors: Noboru Ohtani, Masakazu Katsuno, Hiroshi Tsuge, Masashi Nakabayashi, Tatsuo Fujimoto
  • Publication number: 20090205565
    Abstract: The invention provides an apparatus for manufacturing good quality single-crystal silicon carbide stably without formation of cracks and the like, which apparatus comprises: at least a crucible for accommodating silicon carbide feedstock powder and seed crystal; heat insulation material installed around the crucible; and a heating device for heating the crucible, wherein the outer profile of the crucible includes at least one region of narrower diameter than a vertically adjacent region, insulation material is also installed in the space left by the diameter difference, and thickness of the insulation material at the narrower diameter region is greater than that of the insulation material at the vertically adjacent region. The apparatus for manufacturing single-crystal silicon carbide enables precise control of the temperature gradient inside the crucible, thereby enabling manufacture of good quality single-crystal silicon carbide.
    Type: Application
    Filed: April 1, 2009
    Publication date: August 20, 2009
    Inventors: Masashi Nakabayashi, Tatsuo Fujimoto, Hiroshi Tsuge, Masakazu Katsuno, Noboru Ohtani
  • Publication number: 20080220829
    Abstract: A mobile terminal device having a display includes an image capturing unit capturing an image at a prescribed periodical timing; an image changing detector detecting an image change exceeding a prescribed extent between the image captured at a prescribed timing and one or more of images obtained at a previous timing; and a power saving controller controlling a power saving state of the display depending on whether an image change exceeding the prescribed extent is detected.
    Type: Application
    Filed: February 25, 2008
    Publication date: September 11, 2008
    Inventors: Katsuaki Akama, Hiroshi Tsuge