Abstract: An assembling apparatus (1) comprises a shaft member (3) having a linear assembling function and a rotational assembling function, a base (2) supporting the shaft member (3) to be movable in the axial direction and rotatable axially, and a drive unit moving in an axial direction and axially rotating the shaft member (3).

Abstract: Provided is an epitaxial silicon carbide single-crystal substrate in which a silicon carbide epitaxial film having excellent in-plane uniformity of doping density is disposed on a silicon carbide single-crystal substrate having an off angle that is between 1° to 6°. The epitaxial film is grown by repeating a dope layer that is 0.5 ?m or less and a non-dope layer that is 0.1 ?m or less. The dope layer is formed with the ratio of the number of carbon atoms to the number of silicon atoms (C/Si ratio) in a material gas being 1.5 to 2.0, and the non-dope layer is formed with the C/Si ratio being 0.5 or more but less than 1.5. The resulting epitaxial silicon carbide single-crystal substrate comprises a high-quality silicon carbide epitaxial film, which has excellent in-plane uniformity of doping density, on a silicon carbide single-crystal substrate having a small off angle.

Abstract: Disclosed is a process for producing an epitaxial single-crystal silicon carbide substrate by epitaxially growing a silicon carbide film on a single-crystal silicon carbide substrate by chemical vapor deposition. The step of crystal growth in the process comprises a main crystal growth step, which mainly occupies the period of epitaxial growth, and a secondary crystal growth step, in which the growth temperature is switched between a set growth temperature (T0) and a set growth temperature (T2) which are respectively lower and higher than a growth temperature (T1) used in the main crystal growth step. The basal plane dislocations of the single-crystal silicon carbide substrate are inhibited from being transferred to the epitaxial film. Thus, a high-quality epitaxial film is formed.

Abstract: Disclosed is a stator for a rotating electrical machine, which includes a stator core having a plurality of slots, and a plurality of coils. Each of the coils has a first inserting section and a second inserting section, which are inserted into two slots which form a pair, a first coil end, and a second coil end. The first and/or the second coil end has a twisted portion and a bent portion. The twisted portion is formed by twisting the coil end at a part close to the first inserting section. The bent portion is formed by bending, at a part close to the second inserting section, the coil end such that the coil end is laid flat.

Abstract: The present invention, which provides a crucible for producing single-crystal silicon carbide, and a production apparatus and a production method for single-crystal silicon carbide, which are capable of stably growing a single-crystal silicon carbide ingot good in crystallinity at high yield, is a crucible for producing single-crystal silicon carbide having a crucible vessel for holding silicon carbide raw material and a crucible cover for attaching a seed crystal and is adapted to sublimate a silicon carbide raw material in the crucible vessel to supply silicon carbide sublimation gas onto a seed crystal attached to the crucible cover and grow single-crystal silicon carbide on the seed crystal, which crucible for producing single-crystal silicon carbide is provided in the crucible vessel and the crucible cover with threaded portions to be screwed together and is provided with a sublimation gas discharge groove or grooves capable of regulating flow rate by relative rotation of the threaded portions; and is a

Abstract: The present invention provides an epitaxial SiC monocrystalline substrate having a high quality epitaxial film suppressed in occurrence of step bunching in epitaxial growth using a substrate with an off angle of 6° or less and a method of production of the same, that is, an epitaxial silicon carbide monocrystalline substrate comprised of a silicon carbide monocrystalline substrate with an off angle of 6° or less on which a silicon carbide monocrystalline thin film is formed, the epitaxial silicon carbide monocrystalline substrate characterized in that the silicon carbide monocrystalline thin film has a surface with a surface roughness (Ra value) of 0.5 nm or less and a method of production of the same.

Abstract: The invention provides a high-quality SiC single-crystal substrate, a seed crystal for producing the high-quality SiC single-crystal substrate, and a method of producing the high-quality SiC single-crystal substrate, which enable improvement of device yield and stability. Provided is an SiC single-crystal substrate wherein, when the SiC single-crystal substrate is divided into 5-mm square regions, such regions in which dislocation pairs or dislocation rows having intervals between their dislocation end positions of 5 ?m or less are present among the dislocations that have ends at the substrate surface account for 50% or less of all such regions within the substrate surface and the dislocation density in the substrate of dislocations other than the dislocation pairs or dislocation is 8,000/cm2.

Abstract: The present invention provides single-crystal silicon carbide and a single-crystal silicon carbide wafer of good-quality that are low in dislocations, micropipes and other crystal defects and enable high yield and high performance when applied to a device, wherein the ratio of doping element concentrations on opposite sides in the direction of crystal growth of the interface between the seed crystal and the grown crystal is 5 or less and the doping element concentration of the grown crystal in the vicinity of the seed crystal is 2×1019 cm?3 to 6×1020 cm?3.

Abstract: The present invention provides a single-crystal silicon carbide ingot capable of providing a good-quality substrate low in dislocation defects, and a substrate and epitaxial wafer obtained therefrom. It is a single-crystal silicon carbide ingot comprising single-crystal silicon carbide which contains donor-type impurity at a concentration of 2×1018 cm?3 to 6×1020 cm?3 and acceptor-type impurity at a concentration of 1×1018 cm?3 to 5.99×1020 cm?3 and wherein the concentration of the donor-type impurity is greater than the concentration of the acceptor-type impurity and the difference is 1×1018 cm?3 to 5.99×1020 cm?3, and a substrate and epitaxial wafer obtained therefrom.

Abstract: The invention provides a high-quality SiC single-crystal substrate, a seed crystal for producing the high-quality SiC single-crystal substrate, and a method of producing the high-quality SiC single-crystal substrate, which enable improvement of device yield and stability. Provided is an SiC single-crystal substrate wherein, when the SiC single-crystal substrate is divided into 5-mm square regions, such regions in which dislocation pairs or dislocation rows having intervals between their dislocation end positions of 5 ?m or less are present among the dislocations that have ends at the substrate surface account for 50% or less of all such regions within the substrate surface and the dislocation density in the substrate of dislocations other than the dislocation pairs or dislocation is 8,000/cm2.

Abstract: The present invention provides a single-crystal silicon carbide ingot capable of providing a good-quality substrate low in dislocation defects, and a substrate and epitaxial wafer obtained therefrom. It is a single-crystal silicon carbide ingot comprising single-crystal silicon carbide which contains donor-type impurity at a concentration of 2×1018 cm?3 to 6×1020 cm3 and acceptor-type impurity at a concentration of 1×1018 cm?3 to 5.99×1020 cm?3 and wherein the concentration of the donor-type impurity is greater than the concentration of the acceptor-type impurity and the difference is 1×1018 cm?3 to 5.99×1020 cm?3, and a substrate and epitaxial wafer obtained therefrom.

Abstract: The invention provides an apparatus for manufacturing good quality single-crystal silicon carbide stably without formation of cracks and the like, which apparatus comprises: at least a crucible for accommodating silicon carbide feedstock powder and seed crystal; heat insulation material installed around the crucible; and a heating device for heating the crucible, wherein the outer profile of the crucible includes at least one region of narrower diameter than a vertically adjacent region, insulation material is also installed in the space left by the diameter difference, and thickness of the insulation material at the narrower diameter region is greater than that of the insulation material at the vertically adjacent region. The apparatus for manufacturing single-crystal silicon carbide enables precise control of the temperature gradient inside the crucible, thereby enabling manufacture of good quality single-crystal silicon carbide.

Abstract: A mobile terminal device having a display includes an image capturing unit capturing an image at a prescribed periodical timing; an image changing detector detecting an image change exceeding a prescribed extent between the image captured at a prescribed timing and one or more of images obtained at a previous timing; and a power saving controller controlling a power saving state of the display depending on whether an image change exceeding the prescribed extent is detected.

Abstract: In order to provide a roll connector structure for a vehicle in which there is no complicated or complex wiring in the steering wheel and the space within the steering wheel can be utilized efficiently, a roll connector structure for a vehicle including a stator side casing which is fixed to a steering column, a rotor side casing which is mounted to the stator side casing and rotates integrally with a steering wheel, and a cable which is accommodated between the stator side casing and the rotor side casing, wherein at least one steering switch is connected to the rotor side casing without wiring, is provided.

Abstract: An input device for use in a vehicle for inputting settings pertaining to a driver's intention of acceleration and deceleration includes a running mode selection switch and an acceleration/deceleration switch. A plurality of modes, for example, a manual speed change mode, an automatic speed change mode, a speed setting mode, and a distance-between-cars setting mode, are selectively set in the running mode selection switch. The acceleration/deceleration switch allows an accelerating or decelerating operation in correspondence to the selected mode. Operation switches which have been conventionally provided separately for each of functions are integrated into two parts, that is, the running mode selection switch and the acceleration/deceleration switch. After a desired mode has been selected, a desired function can be realized only by operation corresponding to a driver's intention of acceleration or deceleration.

Abstract: In order to provide a roll connector structure for a vehicle in which there is no complicated or complex wiring in the steering wheel and the space within the steering wheel can be utilized efficiently, a roll connector structure for a vehicle including a stator side casing which is fixed to a steering column, a rotor side casing which is mounted to the stator side casing and rotates integrally with a steering wheel, and a cable which is accommodated between the stator side casing and the rotor side casing, wherein at least one steering switch is connected to the rotor side casing without wiring, is provided.

Abstract: A method for real-time three-dimensional control of position and attitude of an end effector of a manipulator relative to a moving workpiece. Angles of revolute joints of the manipulator are controlled by harmonizing a first control methodology, wherein the z-axis coordinate of the end effector and the attitude of the end effector are controlled based on input target values for the position and attitude of the end effector, with a second control methodology, wherein the x-axis and y-axis coordinates of the end effector are controlled responsive to image data captured by a camera mounted to the manipulator.

Abstract: A buckle device for a car seatbelt system is used together with a plurality of tongue plates to which occupant securing webbings are connected. Lock members for engaging the tongue plates are released upon operating a single release button. The shifting direction of the release button is confined in a plane defined by the insertion directions of the tongue plates. The operation force of the release button is transmitted to the lock members via a mechanism for example cam-contact or link mechanism. Therefore, the operation necessary for a passenger at the time of release is only to push the release button. There is no need to hold or pinch the buckle device at any time.

Abstract: A webbing retractor which, when a webbing is drawn out instantaneously, prevents the drawing out of the webbing by operating a lock mechanism. In addition, when a vehicle is decelerated suddenly, the drawing out of the webbing is also instantaneously prevented by causing a pawl to engage with a lock wheel preventing the lock wheel from rotating. The webbing retractor includes a lever which is swung in such a manner as to be movable between a first position in which the pawl is made unengageable with the lock wheel and a second position in which the pawl is made engageable with the lock wheel. The webbing retraction also includes a lever swing member which causes the lever to be located in the first position as the take-up shaft rotates in a webbing taking-up direction and to be situated in the second position as the take-up shaft rotates in a webbing draw-out direction. Accordingly, the pawl is prevented from engaging with the lock wheel at a take-up limit of the webbing.

Abstract: A webbing retractor for winding a webbing which is fastened around a seat occupant of a vehicle is arranged such that a claw member is engaged with a ratchet wheel fixed to a webbing take-up shaft and rotation of the take-up shaft in a direction in which the webbing is drawn out is thereby prevented when the speed of the vehicle suddenly reduces. Engagement of the claw member with the ratchet wheel is achieved by engaging a rotary wheel which is rotated in the same direction as that in which the take-up shaft is rotated with a driving plate which drives the claw member to cause it to be engaged with the ratchet wheel through a cam ring and an engaging lever. In consequence, the rotational force of the rotary wheel is reliably transmitted to the driving plate by means of the cam ring and the engaging lever.