Abstract: A semiconductor device according to one embodiment includes a semiconductor substrate having a main surface and a back surface opposite to the main surface, a drift region of a first conductivity type, a base region of a second conductivity type, a source region of the first conductivity type, and a gate electrode. The semiconductor substrate has a trench in the main surface. The gate electrode is formed in the trench. A distribution of an impurity concentration in the base region has a plurality of peak values along a direction of depth from the main surface toward the back surface, and the number of peak values is four or more.

Abstract: The present invention is provided to easily manufacture an IPD as any of a high-side switch and a low-side switch. A level shifting circuit is coupled to an input terminal, a first terminal, and a grounding terminal. Drive power of the level shifting circuit is supplied from the first terminal. An output signal of the level shifting circuit is input to a driver circuit. The driver circuit is coupled to the first terminal and a second terminal. Drive power of the driver circuit is supplied from the first terminal. A transistor has a gate electrode coupled to the driver circuit, a source coupled to the second terminal, and a drain coupled to a third terminal.

Abstract: A semiconductor device and a circuit arrangement are provided so as to reduce an on resistance. A first power MOS transistor and a second power MOS transistor are formed on the same semiconductor substrate. A first power MOS transistor formed in a first element formation region has a columnless structure including no columns. The second power MOS transistor formed in a second element formation region has an SJ structure including columns.

Abstract: The present invention is provided to easily manufacture an IPD as any of a high-side switch and a low-side switch. A level shifting circuit is coupled to an input terminal, a first terminal, and a grounding terminal. Drive power of the level shifting circuit is supplied from the first terminal. An output signal of the level shifting circuit is input to a driver circuit. The driver circuit is coupled to the first terminal and a second terminal. Drive power of the driver circuit is supplied from the first terminal. A transistor has a gate electrode coupled to the driver circuit, a source coupled to the second terminal, and a drain coupled to a third terminal.

Abstract: In a high voltage MOS transistor, in a portion immediately below the gate electrode, peaks of concentration distribution in depth direction of a first conductivity type impurity and a second conductivity type impurity in the drain offset region are in the same depth, the second conductivity type impurity being higher concentrated than the first conductivity type impurity.

Abstract: A power switch circuit includes an output transistor which is connected between a first power supply terminal and an output terminal, and drives a load, an abnormality detecting circuit which detects an abnormal state of the output transistor, a resistance element which generates a resistance component by a diffusion layer formed on a well region, and is provided between an input terminal and a control terminal of the output transistor, and a well potential switching circuit which switches a voltage to be supplied to the well region between a voltage of the output terminal and a voltage of a second power supply terminal based on a detection result by the abnormality detecting circuit.

Abstract: A bidirectional switch includes a first switch and a second switch. The switch includes a well region of a first-conductivity-type formed on a semiconductor substrate, and serving as drains of the first switch and the second switch, a gate electrode of the first switch provided in a first trench formed in the well region through a first gate insulating film, a gate electrode of the second switch formed in a second trench formed in the well region so as to be spaced apart from the first trench with a second gate insulating film, a source region of the first switch formed on a side wall of the first trench, and on a surface of the well region via a first channel region of a second-conductivity-type, and a source region of the second switch formed on a side wall of the second trench, and on a surface of the well region via a second channel region of the second-conductivity-type. The well region is formed in a region between the first trench and the second trench.

Abstract: A power switch circuit includes an output transistor which is connected between a first power supply terminal and an output terminal, and drives a load, an abnormality detecting circuit which detects an abnormal state of the output transistor, a resistance element which generates a resistance component by a diffusion layer formed on a well region, and is provided between an input terminal and a control terminal of the output transistor, and a well potential switching circuit which switches a voltage to be supplied to the well region between a voltage of the output terminal and a voltage of a second power supply terminal based on a detection result by the abnormality detecting circuit.

Abstract: A charge pump circuit is provided with a capacitor for generating a boosted voltage from a power supply voltage in response to a clock signal; and an output node from which the boosted voltage is externally outputted. The capacitor includes a first well formed within a substrate, a second well formed within the first well, first and second diffusion regions formed within the second well to receive the clock signal, a channel region provided between the first and second diffusion regions in which channel region a channel is formed in response to the clock signal; and an electrode positioned over the channel region across a dielectric and connected with the output node. The output node is also connected with the first well to apply said boosted voltage to the first well.

Abstract: In a dead time control circuit, a delay circuit is connected to an input terminal and adapted to delay signals therethrough by a delay time corresponding to a dead time. A logic circuit has a first input connected via the delay circuit to the input terminal, a second input connected directly to the input terminal, and an output connected to an output terminal. The dead time having adjustable temperature characteristics.

Abstract: A charge pump circuit is provided with a capacitor for generating a boosted voltage from a power supply voltage in response to a clock signal; and an output node from which the boosted voltage is externally outputted. The capacitor includes a first well formed within a substrate, a second well formed within the first well, first and second diffusion regions formed within the second well to receive the clock signal, a channel region provided between the first and second diffusion regions in which channel region a channel is formed in response to the clock signal; and an electrode positioned over the channel region across a dielectric and connected with the output node. The output node is also connected with the first well to apply said boosted voltage to the first well.

Abstract: In a high voltage MOS transistor, in a portion immediately below the gate electrode, peaks of concentration distribution in depth direction of a first conductivity type impurity and a second conductivity type impurity in the drain offset region are in the same depth, the second conductivity type impurity being higher concentrated than the first conductivity type impurity.

Abstract: In a dead time control circuit, a delay circuit is connected to an input terminal and adapted to delay signals therethrough by a delay time corresponding to a dead time. A logic circuit has a first input connected via the delay circuit to the input terminal, a second input connected directly to the input terminal, and an output connected to an output terminal. The dead time having adjustable temperature characteristics.

Abstract: A high withstand voltage diode for protecting a high-voltage transistor has a first region 2 of a second conductivity type formed on the substrate of a first conductivity type, a high-concentration second region 5 of the second type formed on the first region 2, a third region 3 of the first conductivity type formed so as to, be adjacent to the first region 2, a high-concentration fourth region 4 of the first conductivity type formed on the surface of the third region 3, and a gate electrode 7 that straddles the first region 2 and the third region 3 with an intervening gate oxide film, and which is electrically connected to the fourth region.

Abstract: A high breakdown-voltage diode is provided, which has a decreased chip area and a low electric resistance between anode and cathode regions after the breakdown phenomenon takes place. A semiconductor layer of a first conductivity type is vertically isolated by a first isolation dielectric and laterally isolated by a second isolation dielectric from outside. A first diffusion region of a second conductivity type is formed in a surface area of the semiconductor layer, thereby forming a first p-n junction. A second diffusion region of the first conductivity type is formed in the surface area to be apart from the first diffusion region. A third diffusion region of the second conductivity type is formed in the surface area between the first and second diffusion regions, thereby forming a second p-n junction. The third diffusion region is electrically connected to the first diffusion region.

Abstract: The invention relates to a field effect transistor that ensures that a threshold voltage does not increase even if a breakdown voltage is increased.

Abstract: A semiconductor device with a diode is provided, which enables a low operating resistance after breakdown and a small chip area. A first impurity doped region of a first conductivity type acting one part of the diode is formed in a semiconductor substrate. A second impurity doped region of a second conductivity type acting the other part of the diode is formed in the substrate. The first and second impunity doped regions produce a first p-n junction at their interface. A third impurity doped region of the first conductivity type is formed in the second impurity doped region to be electrically connected to the first impunity doped region. The third and second impunity doped region produce a second p-n Junction at their interface. When a reverse voltage is applied across the first and second impurity doped regions, a first depletion region is created near the first p-n junction and a second depletion region is created near the second p-n junction.

Abstract: A high-breakdown-voltage MOS transistor includes a substrate of one conductivity and a semiconductor layer of the other conductivity type, a drain electrode, a diffusion layer of one conductivity type, a base region of one conductivity type, a source region, a gate electrode, a source electrode, and a heavily doped layer. The diffusion layer and the substrate are electrically connected to the source region.