Abstract: In order to provide a method for measuring a filling capacity of a raw material such as leaf tobacco without carrying out a complicated operation, the present invention includes the steps of (i) irradiating a near infrared ray on a sample of a raw material so as to measure a transmission absorption spectrum or a diffuse reflectance spectrum of the sample; and (ii) calculating an estimated filling capacity value by use of the transmission absorption spectrum or the diffuse reflectance spectrum thus measured and on the basis of a calibration curve which has been prepared in advance.

Abstract: A drive transmission device includes: a driving member configured to rotate by a first electric current and having an attracting portion configured to generate magnetic force by a second electric current; a driven member having an attracted portion, the attracted portion facing the driving member and configured to be attached to the attracting portion by the magnetic force, so that the driven member integrally rotates with the driving member when the attracting portion is coupled to the attracted portion; and a controller configured to control the first electric current and the second electric current, the controller configured to apply the first electric current and then the second electric current.

Abstract: A rotor support structure includes: an operable unit including a rotor and a casing rotatably supporting the rotor; a support member includes a support member main body configured to accommodate therein the operable unit, and an attachment part to attach the support member main body to a base; and a press part configured, when the support member with the operable unit accommodated therein is attached to the base, to press the operable unit to hold the operable unit in the support member main body.

Abstract: An organic electroluminescence (EL) display panel and method of manufacturing an organic EL display panel. The display panel includes a substrate on which a thin-film transistor layer is formed, with an interlayer insulating film formed above the thin-film transistor layer. A plurality of strip-shaped barrier ribs are arranged in parallel on the interlayer insulating film. Each electrode of a plurality of first electrode groups has first electrodes arranged in a line and arranged between two adjacent barrier ribs of the plurality of strip-shaped barrier ribs, with each of the first electrodes including a transparent conductive film and a reflective metal film formed of a metal material. A plurality of light-emitting layers are each formed to cover a different electrode of the plurality of first electrode groups, while a second electrode is formed above the plurality of light-emitting layers.

Abstract: An image forming device includes a first measuring unit to measure a size of the recording medium when the image is formed on the first surface by the image forming unit, and a second measuring unit to measure the size of the recording medium prior to an image being formed on the second surface of the recording medium, and a control unit configured to change the size of printing range based upon the image data that is used to form the image on the second surface of the recording medium in accordance with a medium ratio of the size of the recording medium measured by the first measuring unit to the size of the recording medium measured by the second measuring unit.

Abstract: An organic EL device includes a first substrate and a plurality of organic EL elements above a first portion of the first substrate. A first inorganic layer covers the plurality of organic EL elements. An active layer is above a second portion of the first substrate that is different than the first portion. The active layer comprises a material that is at least one of hygroscopic and oxidizable. A second inorganic layer covers the active layer. A second substrate is opposite the first substrate, with the plurality of organic EL elements being between the first and second substrates. A seal extends between the first and second substrates to define a sealed space between the first and second substrates. The second inorganic layer includes through-holes that expose the active layer to the sealed space that is defined by the first substrate, the second substrate, and the seal.

Abstract: A developer conveying apparatus includes a main body in which a developer is conveyed, a first conveying member including a first rotation shaft rotatably provided in the main body and a first conveying portion having a spiral shape and provided around the first rotation shaft, and a second conveying member including a second rotation shaft rotatably provided in the main body and a second conveying portion having a spiral shape and provided around the second rotation shaft. A developer retention portion is formed at a predetermined portion of the second conveying member.

Abstract: A drive transmission device includes: a driving member configured to rotate by a first electric current and having an attracting portion configured to generate magnetic force by a second electric current; a driven member having an attracted portion, the attracted portion facing the driving member and configured to be attached to the attracting portion by the magnetic force, so that the driven member integrally rotates with the driving member when the attracting portion is coupled to the attracted portion; and a controller configured to control the first electric current and the second electric current, the controller configured to apply the first electric current and then the second electric current.

Abstract: An image forming device includes a first measuring unit to measure a size of the recording medium when the image is formed on the first surface by the image forming unit, and a second measuring unit to measure the size of the recording medium prior to an image being formed on the second surface of the recording medium, and a control unit configured to change the size of printing range based upon the image data that is used to form the image on the second surface of the recording medium in accordance with a medium ratio of the size of the recording medium measured by the first measuring unit to the size of the recording medium measured by the second measuring unit.

Abstract: A sheet supply device includes a first separation unit for applying a transportation load to a medium supplied from a stored state with a sheet supply member to separate the medium, and a second separation unit disposed on a downstream side of the first separation unit for separating the medium passing through the first separation unit. The first separation unit is disposed outside an extension area of the second separation unit in a medium transportation direction.

Abstract: An image forming apparatus includes an image forming section that forms a toner image. A transferring section transfers the toner image formed onto a recording medium. A fixing unit is located adjacent the image forming section such that a first space is defined between the fixing unit and the image forming section. The fixing unit fixes the toner image on the recording medium. An air-chamber includes a wind exit and discharges the air through the wind exit such that the air flows into the first space. An air-propelling device propels the air to discharge through the wind exit.

Abstract: Methods deposit a film on a substrate disposed in a substrate processing chamber. The substrate has a gap formed between adjacent raised surfaces. Flows of first precursor deposition gases are provided to the substrate processing chamber. A first high-density plasma is formed from the flows of first deposition gases to deposit a first portion of the film over the substrate and within the gap with a first deposition process that has simultaneous deposition and sputtering components until after the gap has closed. A sufficient part of the first portion of the film is etched back to reopen the gap. Flows of second precursor deposition gases are provided to the substrate processing chamber. A second high-density plasma is formed from the flows of second precursor deposition gases to deposit a second portion of the film over the substrate and within the reopened gap with a second deposition process that has simultaneous deposition and sputtering components.

Abstract: An image forming apparatus has an image forming unit that forms an image on one side of a recording medium, and a return unit that returns the recording medium to the image forming unit so that an image can be formed on the other side. A control unit selects different transport speeds for different types of recording media on at least part of the return path, preferably selecting a comparatively high speed for normal recording media and a slower speed for recording media that are thicker or stiffer than normal, as sensed by a thickness or stiffness sensor or inferred indirectly from another setting such as a fusing temperature setting. Thick or stiff recording media can then negotiate tight turns on the return path without transport failure, while normal media can be transported at high speed on the entire return path.

Abstract: A hole is formed in an insulating film containing silicon and carbon. The insulating film has a density or a carbon concentration varying gradually in the direction of the thickness thereof.

Abstract: An image forming apparatus includes an image forming section that forms a toner image. A transferring section transfers the toner image formed onto a recording medium. A fixing unit is located adjacent the image forming section such that a first space is defined between the fixing unit and the image forming section. The fixing unit fixes the toner image on the recording medium. An air-chamber includes a wind exit and discharges the air through the wind exit such that the air flows into the first space. An air-propelling device propels the air to discharge through the wind exit.

Abstract: Methods deposit a film on a substrate disposed in a substrate processing chamber. The substrate has a gap formed between adjacent raised surfaces. Flows of first precursor deposition gases are provided to the substrate processing chamber. A first high-density plasma is formed from the flows of first deposition gases to deposit a first portion of the film over the substrate and within the gap with a first deposition process that has simultaneous deposition and sputtering components until after the gap has closed. A sufficient part of the first portion of the film is etched back to reopen the gap. Flows of second precursor deposition gases are provided to the substrate processing chamber. A second high-density plasma is formed from the flows of second precursor deposition gases to deposit a second portion of the film over the substrate and within the reopened gap with a second deposition process that has simultaneous deposition and sputtering components.

Abstract: A wiring groove is formed in an insulating film, and then a reformed layer is formed in the vicinity of the wiring groove in the insulating film. Thereafter, a conductive film is buried in the wiring groove, thereby forming a wire. Subsequently, the reformed layer is removed to form a slit, and then a low-dielectric-constant film having a relative dielectric constant lower than the insulating film is buried in the slit.

Abstract: An insulating film is formed of a carbon-containing silicon dioxide film on a semiconductor substrate. In the insulating film, an interconnect groove is formed. A silicon dioxide layer with a density high enough to allow almost no oxygen to pass therethrough is formed on the bottom and side faces of the interconnect groove. And a metal interconnect is formed on the silicon dioxide layer inside the interconnect groove.

Abstract: A wiring groove is formed in an insulating film, and then a reformed layer is formed in the vicinity of the wiring groove in the insulating film. Thereafter, a conductive film is buried in the wiring groove, thereby forming a wire. Subsequently, the reformed layer is removed to form a slit, and then a low-dielectric-constant film having a relative dielectric constant lower than the insulating film is buried in the slit.

Abstract: An insulating film is formed of a carbon-containing silicon dioxide film on a semiconductor substrate. In the insulating film, an interconnect groove is formed. A silicon dioxide layer with a density high enough to allow almost no oxygen to pass therethrough is formed on the bottom and side faces of the interconnect groove. And a metal interconnect is formed on the silicon dioxide layer inside the interconnect groove.