Abstract: A hole is formed in an insulating film containing silicon and carbon. The insulating film has a density or a carbon concentration varying gradually in the direction of the thickness thereof.

Abstract: A hole is formed in an insulating film containing silicon and carbon. The insulating film has a density or a carbon concentration varying gradually in the direction of the thickness thereof.

Abstract: An insulating film is formed of a carbon-containing silicon dioxide film on a semiconductor substrate. In the insulating film, an interconnect groove is formed. A silicon dioxide layer with a density high enough to allow almost no oxygen to pass therethrough is formed on the bottom and side faces of the interconnect groove. And a metal interconnect is formed on the silicon dioxide layer inside the interconnect groove.

Abstract: An insulating film is formed of a carbon-containing silicon dioxide film on a semiconductor substrate. In the insulating film, an interconnect groove is formed. A silicon dioxide layer with a density high enough to allow almost no oxygen to pass therethrough is formed on the bottom and side faces of the interconnect groove. And a metal interconnect is formed on the silicon dioxide layer inside the interconnect groove.

Abstract: An image forming apparatus has an image forming unit that forms an image on one side of a recording medium, and a return unit that returns the recording medium to the image forming unit so that an image can be formed on the other side. A control unit selects different transport speeds for different types of recording media on at least part of the return path, preferably selecting a comparatively high speed for normal recording media and a slower speed for recording media that are thicker or stiffer than normal, as sensed by a thickness or stiffness sensor or inferred indirectly from another setting such as a fusing temperature setting. Thick or stiff recording media can then negotiate tight turns on the return path without transport failure, while normal media can be transported at high speed on the entire return path.

Abstract: An insulating film is formed of a carbon-containing silicon dioxide film on a semiconductor substrate. In the insulating film, an interconnect groove is formed. A silicon dioxide layer with a density high enough to allow almost no oxygen to pass therethrough is formed on the bottom and side faces of the interconnect groove. And a metal interconnect is formed on the silicon dioxide layer inside the interconnect groove.

Abstract: A hole is formed in an insulating film containing silicon and carbon. The insulating film has a density or a carbon concentration varying gradually in the direction of the thickness thereof.

Abstract: A wiring groove is formed in an insulating film, and then a reformed layer is formed in the vicinity of the wiring groove in the insulating film. Thereafter, a conductive film is buried in the wiring groove, thereby forming a wire. Subsequently, the reformed layer is removed to form a slit, and then a low-dielectric-constant film having a relative dielectric constant lower than the insulating film is buried in the slit.

Abstract: After a hole is formed in a low dielectric constant film on a substrate, a protective film is formed on the wall surface of the hole or an electron acceptor is caused to be adsorbed by or implanted in the low dielectric constant film exposed at the wall surface of the hole. Otherwise, resist residue is left on the wall surface of the hole. Then, a resist pattern having an opening corresponding to a wire formation region including a region formed with the hole is formed by using a chemically amplified resist.

Abstract: A plurality of lower-level metal interconnects are formed over a semiconductor substrate. A first fluorine-containing insulating film, made of a fluorine-doped insulator, is formed to fill in gaps between adjacent ones of the lower-level metal interconnects over the semiconductor substrate. An interlevel insulating film is formed over the lower-level metal interconnects and the first fluorine-containing insulating film. And a plurality of upper-level metal interconnects are formed on the interlevel insulating film. The interlevel insulating film includes: a second fluorine-containing insulating film made of a fluorine-doped insulator; and a silicon-rich insulating film containing a larger quantity of silicon than a quantity defined by stoichiometry.

Abstract: A plurality of lower-level metal interconnects are formed over a semiconductor substrate. A first fluorine-containing insulating film, made of a fluorine-doped insulator, is formed to fill in gaps between adjacent ones of the lower-level metal interconnects over the semiconductor substrate. An interlevel insulating film is formed over the lower-level metal interconnects and the first fluorine-containing insulating film. And a plurality of upper-level metal interconnects are formed on the interlevel insulating film. The interlevel insulating film includes: a second fluorine-containing insulating film made of a fluorine-doped insulator; and a silicon-rich insulating film containing a larger quantity of silicon than a quantity defined by stoichiometry.

Abstract: An insulating film is formed of a carbon-containing silicon dioxide film on a semiconductor substrate. In the insulating film, an interconnect groove is formed. A silicon dioxide layer with a density high enough to allow almost no oxygen to pass therethrough is formed on the bottom and side faces of the interconnect groove. And a metal interconnect is formed on the silicon dioxide layer inside the interconnect groove.

Abstract: A plurality of lower-level metal interconnects are formed over a semiconductor substrate. A first fluorine-containing insulating film, made of a fluorine-doped insulator, is formed to fill in gaps between adjacent ones of the lower-level metal interconnects over the semiconductor substrate. An interlevel insulating film is formed over the lower-level metal interconnects and the first fluorine-containing insulating film. And a plurality of upper-level metal interconnects are formed on the interlevel insulating film. The interlevel insulating film includes: a second fluorine-containing insulating film made of a fluorine-doped insulator; and a silicon-rich insulating film containing a larger quantity of silicon than a quantity defined by stoichiometry.

Abstract: The present invention relates to the method of manufacturing an antifuse element having an antifuse layer formed between interconnection layers. Conventionally, an antifuse layer was formed after an aperture was formed through an interlayer insulating film. Such resulted in a thinner film thickness at the corner formed by inner wall surface of the aperture and a lower electrode layer. As it is very difficult to control the film thickness of the thinnest part to a specific value, control of the insulation breakdown voltage in "off" state was difficult. The present antifuse element includes a layer with a flat shape of an even thickness. The layer is a complexed film of amorphous silicon film, silicon nitride film and silicon oxide film. The antifuse electrode layer is of a titanium nitride, the film thickness of which is thicker than the invasion length of a fuse link into electrode layers.

Abstract: A drug composition comprising a mucopolysaccharide (also referred in the art as a glycosaminoglycan) and a drug which is scarcely soluble in water but soluble in a water-miscible organic solvent, wherein fine crystals or fine particles of the drug is attached on or between the particles of a mucopolysaccharide, and a process for preparing the same. The drug composition of the present invention exhibits greatly improved solubility and a dissolution rate of the drug, and thus greatly improve the drug's bioavailability.

Abstract: The present invention provides a light-weight and luxury facing for seat which hardly gives rise to folding wrinkles when it is applied to one surface of a cushion constituting a seat; the facing for seat composed of the lamination of a surface material made of fabrics, a flexible cellular plastic middle layer, and a backing, in which the backing is made of a low friction synthetic resin, preferably the backing is coated with a coating agent, particularly preferably said coating agent is prepared from an oxidized polyethylene wax latex or polyvinylidene chloride or ethylene-vinyl acetate copolymer latex or mixture thereof.