Abstract: A range imaging device includes a light source unit that emits light pulses to a measurement space; a light-receiving unit including a photoelectric conversion element that generates charge according to light incident from the space, a pixel circuit including charge storage units in which the charge is integrated in a frame cycle, and a pixel drive circuit that performs switching operation of transfer transistors to distribute the charge to the storage units for integration at integration timing synchronizing with emission of the pulses; and a distance calculation unit that calculates a distance between object in the space and the light-receiving unit based on charge determined by a first charge integrated in each storage unit. The calculation unit calculates the distance by subtracting a second charge from each first charge, the second charge being noise charge as an integrated charge other than the charge distributed and integrated by the switching operation.

Abstract: A range imaging device includes a light source unit, a light-receiving unit, and a range image processing unit that computes a distance to an object. The range image processing unit performs multiple measurements different in relative timing relationship between an emission timing and an accumulation timing, extracts a feature amount based on the amounts of charge accumulated at the measurements, determines whether reflection light of a light pulse has been received by pixels in a single path or via multipath propagation, based on tendency of the extracted feature amount, and calculates the distance to the object present in a measurement space in accordance with a result of the determination.

Abstract: A solid-state image sensor includes a first semiconductor, and a second semiconductor having a composition different from that of the first composition and electrically connected to the first semiconductor. The first semiconductor includes a photodiode that converts light incident on the photodiode into charge carriers, first carrier storages that store the charge carriers, and a transfer gate that controls transfer the charge carriers to a selected one of the first carrier storages. The second semiconductor includes second carrier storages and a potential detection node. The second carrier storages each store charge carriers based on the charge carriers stored in a corresponding one of the first carrier storages. The potential detection node detects the electric potential of each of the second carrier storages. The solid-state image sensor further includes a reset transistor that resets the electric potential of each of the first carrier storages to a predetermined electric potential.

Abstract: In a distance measuring device, a pixel G includes sub pixels Po and Pe in a row direction. Floating diffusion parts Fd1 to Fd4 detect charge quantities relating to reflected modulated light Lb in four terms which are delayed in start by every ¼ of a period of emitted modulated light La in order. A binning group Gv is configured by an array part that the two sub pixels Po and the two sub pixels Pe are adjacent to each other in a row direction.

Abstract: In a distance measuring device, a pixel G includes sub pixels Po and Pe in a row direction. Floating diffusion parts Fd1 to Fd4 detect charge quantities relating to reflected modulated light Lb in four terms which are delayed in start by every ¼ of a period of emitted modulated light La in order. A binning group Gv is configured by an array part that the two sub pixels Po and the two sub pixels Pe are adjacent to each other in a row direction.

Abstract: A unit pixel includes a sensing transistor, a photo diode, and a reset drain region. The sensing transistor includes a reference active region, an output active region, and a gate. The gate is between the reference active region and the output active region to electrically connect the reference active region to the output active region based on a gate voltage. The reference active region and output active region are within a semiconductor substrate. The photo diode is under the gate within the semiconductor substrate. The reset drain region is within the semiconductor substrate and is electrically connected to the photo diode by the gate based on the gate voltage.

Abstract: An image sensor includes a photoelectric conversion unit, a signal generation unit, and a feedback unit. The photoelectric conversion unit is formed above a substrate and detects incident light to generate photo-charges based on a drive voltage. The signal generation unit is formed on the substrate and generates an analog signal based on the photo-charges. The feedback unit generates the drive voltage based on an amount of the photo-charges generated from the photoelectric conversion unit. The image sensor may perform a wide dynamic range (WDR) function.

Abstract: A unit pixel includes a sensing transistor, a photo diode, and a reset drain region. The sensing transistor includes a reference active region, an output active region, and a gate. The gate is between the reference active region and the output active region to electrically connect the reference active region to the output active region based on a gate voltage. The reference active region and output active region are within a semiconductor substrate. The photo diode is under the gate within the semiconductor substrate. The reset drain region is within the semiconductor substrate and is electrically connected to the photo diode by the gate based on the gate voltage.

Abstract: A unit pixel is provided. The unit pixel includes photoelectric converters stacked on each other and configured to generate photo-charges in response to light signals within respective wavelength ranges and provide the photo-charges to respective storage nodes; memories configured to concurrently receive and store the photo-charges from the respective storage nodes in response to a common control signal; and a signal generator that generates analog signals based on the photo-charges stored in the memories, respectively.

Abstract: An image sensor includes a photoelectric conversion unit, a signal generation unit, and a feedback unit. The photoelectric conversion unit is formed above a substrate and detects incident light to generate photo-charges based on a drive voltage. The signal generation unit is formed on the substrate and generates an analog signal based on the photo-charges. The feedback unit generates the drive voltage based on an amount of the photo-charges generated from the photoelectric conversion unit. The image sensor may perform a wide dynamic range (WDR) function.

Abstract: Each of the unit cells provided on a semiconductor substrate of a solid-state imaging device comprises a first p-type well which isolates the semiconductor substrate into an n-type photoelectric conversion region, a second p-type well which is formed in the surface of the photoelectric conversion region and in which a signal scanning circuit section is formed, and a signal storage section which is comprised of a highly doped n-type layer which is formed in the surface of the photoelectric conversion region apart from the second p-type well and higher in impurity concentration than the photoelectric conversion region. The signal storage section having its part placed under a signal readout gate adapted to transfer a packet of signal charge from the storage section to the signal scanning circuit section and its part at which the potential becomes deepest located under the readout gate.

Abstract: An n/p?/p+ substrate where a p?-type epitaxial layer and an n-type epitaxial layer have been deposited on a p+-type substrate is provided. In the surface region of the n-type epitaxial layer, the n-type region of a photoelectric conversion part has been formed. Furthermore, a barrier layer composed of a p-type semiconductor region has been formed so as to enclose the n-type region of the photoelectric conversion part in a plane and reach the p?-type epitaxial layer from the substrate surface. A p-type semiconductor region has also been formed at a chip cutting part for dividing the substrate into individual devices so as to reach the p?-type epitaxial layer from the substrate surface.

Abstract: A solid-state image pickup device includes a semiconductor substrate including a substrate main body having P-type impurities and a first N-type semiconductor layer provided on the substrate main body, an image pickup area including a plurality of photoelectric converters in which the plurality of photoelectric converters include second N-type semiconductor layers, the second N-type semiconductor layers being provided on a surface portion of the first N-type semiconductor layer independently of one another, and a first peripheral circuit area including a first P-type semiconductor layer formed on the first N-type semiconductor layer. The solid-state image pickup device further includes a second peripheral circuit area including a second P-type semiconductor layer formed on the first N-type semiconductor layer and connected to the substrate main body.

Abstract: According to an aspect of the invention, there is provided an amplification-type solid-state image sensing device which uses a semiconductor substrate formed by epitaxially depositing an n-type semiconductor layer on a p-type semiconductor substrate and has a photoelectric conversion unit formed in the n-type semiconductor layer including a first p-type semiconductor layer which is formed under the photoelectric conversion unit of at least one of a G pixel portion and a B pixel portion a second p-type semiconductor layer which is formed to surround the photoelectric conversion unit together with the first p-type semiconductor layer and has a depth up to the first p-type semiconductor layer and a third p-type semiconductor layer which is formed to surround an R pixel portion and has a depth up to the p-type semiconductor substrate.

Abstract: A solid-state image sensor having a well of a first conductivity type; a photoelectric conversion region having a second conductivity type formed in the well storing charges obtained from a photoelectric conversion; a drain region having the second conductivity type formed in the well apart from a surface of the well; and a gate electrode formed on the surface of the well via a gate insulator, the gate electrode transferring the charges from the photoelectric conversion region to the drain region.

Abstract: A source region and drain region are formed in a surface region of a first semiconductor region. Moreover, a second semiconductor region connected to the drain region is formed in the surface region of the first semiconductor region. A third semiconductor region is formed in the first semiconductor region under the second semiconductor region, connected to the second semiconductor region, and accumulates signal charges in accordance with an incident light. A fourth semiconductor region is formed in the surface region of the first semiconductor region between the drain region and source region. Moreover, these source region, drain region, second semiconductor region, and third semiconductor region constitute a pixel, and different voltages are supplied to the drain region in an accumulation period of the signal charges in the pixel, signal readout period, and discharge period of the signal charges.

Abstract: A solid-state image sensor which includes a pixel section, AD converter, line memory, controller and synthesizer is disclosed. The line memory stores a digital signal output from the AD converter. The controller controls the pixel section and AD converter to subject analog signals of different exposure times to an AD converting process by use of the AD converter and transfer the thus AD-converted signals to the line memory in an accumulation period of charges of one frame. The synthesizer is supplied with digital signals of different exposure times from the line memory, compare a fist signal obtained by adding signals of short and long exposure times with a second signal obtained by amplifying the signal of short exposure time by the ratio of the signal of short exposure time to the signal of long exposure time, select a larger one of the compared signals and output the selected signal.

Abstract: A solid-state image pickup device comprising a semiconductor substrate which comprises a substrate body containing P-type impurities and a first N-type semiconductor layer containing N-type impurities, the first N-type semiconductor layer being provided on the substrate body, and including a first P-type semiconductor layer which contains p-type impurities, and which is located on the substrate body, a plurality of optical/electrical conversion portions formed of second N-type semiconductor layers which are provided independently of each other in respective positions in a surface portion of the first N-type semiconductor layer, and a plurality of second P-type semiconductor layers which are formed to surround the optical/electrical conversion portions, which are provided along element isolation regions provided in respective positions in the surface portion of the first N-type semiconductor layer, and which continuously extend from the surface portion of the first N-type semiconductor layer to a surface porti

Abstract: A source region and drain region are formed in a surface region of a first semiconductor region. Moreover, a second semiconductor region connected to the drain region is formed in the surface region of the first semiconductor region. A third semiconductor region is formed in the first semiconductor region under the second semiconductor region, connected to the second semiconductor region, and accumulates signal charges in accordance with an incident light. A fourth semiconductor region is formed in the surface region of the first semiconductor region between the drain region and source region. Moreover, these source region, drain region, second semiconductor region, and third semiconductor region constitute a pixel, and different voltages are supplied to the drain region in an accumulation period of the signal charges in the pixel, signal readout period, and discharge period of the signal charges.

Abstract: A solid-state imaging device has an imaging region in which unit cells, each of which includes a photoelectric conversion section and a signal scanning circuit section, are disposed on a semiconductor substrate in a two-dimensional manner. The signal scanning circuit section is composed of a plurality of transistors. At least part of a gate contact of each transistor in the signal scanning circuit section is formed on an active region of each transistor.