Abstract: A magneto-resistive element employs a CPP structure and includes an antiferromagnetic layer, a pinned magnetization layer, a nonmagnetic intermediate layer and a free magnetization layer that are successively stacked. The pinned magnetization layer includes a first pinned magnetization layer, a nonmagnetic coupling layer and a second pinned magnetization layer that are successively stacked on the antiferromagnetic layer, and the first and second pinned magnetization layers are antiferromagnetically exchange-coupled. One of the first and second pinned magnetization layer is formed by a ferromagnetic layer made of a ferromagnetic material at least including one element or alloy selected from a group consisting of Co, Fe, Ni and alloys thereof, and the other is formed by a resistance control layer made of a conductive ferromagnetic oxide.

Abstract: A magnetoresistive device includes a laminated film, and a mechanism for applying sense current in a direction of lamination in the laminated film, wherein the laminated film includes a first ferromagnetic layer having a substantially fixed direction of magnetization, a second ferromagnetic layer having a freely variable direction of magnetization according to an external magnetic field, the second ferromagnetic layer including a non-magnetic metal layer, and two or more ferromagnetic metal layers separated from each other by the non-magnetic metal layer in the direction of lamination, and a non-magnetic intermediate layer that separates the first and second ferromagnetic layer from each other.

Abstract: A CPP magnetoresistive effect element includes a free magnetization layer, a fixed magnetization layer, and a plurality of conductive non-magnetic intermediate layers formed between the free magnetization layer and the fixed magnetization layer. An insulating layer and a magnetic layer including magnetic atoms are provided between any two of the non-magnetic intermediate layers.

Abstract: A magnetoresistive film is interposed between domain controlling films in a current-perpendicular-to-the-plane (CPP) structure magnetoresistive element. The domain controlling films designed to establish a first biasing magnetic field of a first intensity across the magnetoresistive film along the front end of the magnetoresistive film and a second biasing magnetic field of a second intensity larger than the first intensity along the rear end of the magnetoresistive film. The second biasing magnetic field serves to establish a single domain property within the magnetoresistive film along the rear end. Although the first biasing magnetic field acts in the same direction as the current field at a position near the front end of the magnetoresistive film, the magnetization is allowed to reliably rotate near the front end. A sensing current having a larger current value can be supplied to the magnetoresistive film. The magnetoresistive film exhibits a sufficient sensitivity.

Abstract: An electrically conductive body is connected to an electromagnetic transducer film in a electromagnetic transducer element so as to form a path for current supplied to the electromagnetic transducer film. Heat is generated based on the electric resistance of the electromagnetic transducer film. A thermoelectric element such as a Peltier element is incorporated in the electrically conductive body. The thermoelectric element serves to absorb the heat. The supplied current is also utilized to drive the thermoelectric element. A wiring pattern and a power source dedicated to the thermoelectric element can be omitted in the electromagnetic transducer element. The electromagnetic transducer element is thus allowed to suppress rise in the temperature of the electromagnetic transducer film with a simple structure.

Abstract: A current-perpendicular-to-the-plane (CPP) structure magnetoresistive element includes an electrode layer contacting a magnetoresistive film. A low resistance region is defined to extend rearward along the boundary of the magnetoresistive film from the front end exposed at the medium-opposed surface of the head slider. A high resistance region is defined to extend rearward along the boundary from the rear end of the low resistance region. The high resistance region has a resistivity higher than that of the low resistance region. The high resistance region serves to restrict the path of a sensing current nearest to the medium-opposed surface. The sensing current is allowed to concentrate at a position closest to the medium-opposed surface in the magnetoresistive film. Magnetization sufficiently rotates in the magnetoresistive film near the medium-opposed surface. The CPP structure magnetoresistive element maintains a sufficient variation in the resistance. A sufficient sensitivity can be maintained.

Abstract: A current-perpendicular-to-the-plane (CPP) structure magnetoresistive element includes a spin valve film. A boundary is defined between electrically-conductive layers included in a non-magnetic intermediate layer in the spin valve film. A magnetic metallic material and an insulating material exist on the boundary. The insulating material serves to reduce the sectional area of the path for the sensing electric current. The CPP structure magnetoresistive element realizes a larger variation in the electric resistance in response to the rotation of the magnetization in the free magnetic layer. A sensing electric current of a smaller level is still employed to obtain a sufficient variation in the voltage. Accordingly, the CPP structure magnetoresistive element greatly contributes to a further improvement in the recording density and reduction in the electric consumption.

Abstract: A magnetoresistive device includes a laminated film, and a mechanism for applying sense current in a direction of lamination in the laminated film, wherein the laminated film includes a first ferromagnetic layer having a substantially fixed direction of magnetization, a second ferromagnetic layer having a freely variable direction of magnetization according to an external magnetic field, the second ferromagnetic layer including a non-magnetic metal layer, and two or more ferromagnetic metal layers separated from each other by the non-magnetic metal layer in the direction of lamination, and a non-magnetic intermediate layer that separates the first and second ferromagnetic layer from each other.