Abstract: A semiconductor device includes a semiconductor substrate: a vertical Hall element formed in the semiconductor substrate, and having a magnetosensitive portion; a first excitation wiring disposed above the magnetosensitive portion, and configured to apply a first calibration magnetic field (M1) to the magnetosensitive portion; and second excitation wirings disposed above the magnetosensitive portion on one side and on another side of the first excitation wiring, respectively, along the first excitation wiring as viewed in plan view from immediately above a front surface of the semiconductor substrate, and configured to apply second calibration magnetic fields (M2) to the magnetosensitive portion.

Abstract: A magnetic sensor includes a magneto-sensitive portion (105); an excitation wiring (110) formed in a wiring region above the magneto-sensitive portion (105) through intermediation of an insulating film (12), the excitation wiring (110) including a plurality of conductor portions (1101, 1102, 1103, 1104, and 1105) arranged in in order across at least one radial direction from a center axis of the magneto-sensitive portion (105); a current flowing through the excitation wiring (110) having a current density of which an absolute value becomes zero in a vicinity of a center of the magneto-sensitive portion (105) and continuously increases toward an outer side of the magneto-sensitive portion (105); and a magnetic field generated by the current flowing through the excitation wiring (110) in a direction vertical to the surface of the magneto-sensitive portion (105).

Abstract: A semiconductor device includes a semiconductor substrate having a surface perpendicular to the first direction; a vertical Hall element formed in the semiconductor substrate, and including a magnetosensitive portion having a depth in the first direction, a width in the second direction, and a length in the third direction; and an excitation wiring extending in the third direction and disposed above the semiconductor substrate and at a position that overlaps the center position of the width of the magnetosensitive portion, and the value u derived from Expression (1) is 0.

Abstract: A magnetic sensor has a Hall IC that has a Hall element formed on a surface of the Hall IC, and a lead frame that supports the Hall IC. The lead frame includes a first region that is disposed in the vicinity of the Hall element and generates a first magnetic field due to a first eddy current generated when a measurement target magnetic field is applied, and second regions that are disposed away from the first region and generate a second magnetic field having an intensity that cancels the first magnetic field by means of second eddy currents generated when the measurement target magnetic field is applied.

Abstract: A magnetic substance detection sensor includes a first support substrate, a magnet disposed on the upper main surface of the first support substrate so that a magnetization direction becomes parallel to the upper main surface of the first support substrate, a semiconductor chip disposed on the upper main surface of the first support substrate and having a magnetic field detection element configured to detect a magnetic field component in a specific direction, and a soft magnetic substance film disposed on the lower main surface of the first support substrate and extending in a direction parallel to the magnetization direction of the magnet.

Abstract: A semiconductor device includes a semiconductor substrate; a vertical Hall element including a magnetosensitive portion, and formed in the semiconductor substrate; and an excitation wiring provided above a surface of the semiconductor substrate and apart from the magnetosensitive portion. The excitation wiring is formed of a single wiring with a plurality of turns. The excitation wiring includes a plurality of main wiring portions arranged side by side, and apart from one another in an overlapping region that overlaps the magnetosensitive portion as viewed in plan view from a direction orthogonal to the surface of the semiconductor substrate; and auxiliary wiring portions connecting each of the plurality of main wiring portions to one another in series.

Abstract: A magnetic sensor has a Hall IC that has a Hall element formed on a surface of the Hall IC, and a lead frame that supports the Hall IC. The lead frame includes a first region that is disposed in the vicinity of the Hall element and generates a first magnetic field due to a first eddy current generated when a measurement target magnetic field is applied, and second regions that are disposed away from the first region and generate a second magnetic field having an intensity that cancels the first magnetic field by means of second eddy currents generated when the measurement target magnetic field is applied.

Abstract: A semiconductor device includes a semiconductor substrate 10 of a first conductivity type, a vertical Hall element 100 provided on the semiconductor substrate 10, and an excitation conductor 200 provided directly above the vertical Hall element 100 with an intermediation of an insulating film 30. The vertical Hall element 100 includes a semiconductor layer 101 of a second conductivity type provided on the semiconductor substrate 10, and a plurality of electrodes 111 through 115 each constituted from a high-concentration second conductivity type impurity region and provided on the surface of the semiconductor layer 101 along a straight line. A ratio WC/WH between a width WC of the excitation conductor 200 and a width WH of each of the plurality of electrodes 111 through 115 satisfies 0.3?WC/WH?1.0.

Abstract: A magnetic substance detection sensor includes a support substrate, a semiconductor chip provided on the support substrate and having a magnetic field detection element, a permanent magnet provided on the support substrate, and a resin encapsulation layer covering the semiconductor chip and the permanent magnet. The resin encapsulation layer has a first resin layer exposing the permanent magnet and covering the semiconductor chip, and a second resin layer continuously covering the permanent magnet and the first resin layer, and stress caused by curing contraction of the second resin layer is smaller than that of the first resin layer.

Abstract: A magnetic substance detection sensor includes a first support substrate, a magnet disposed on the upper main surface of the first support substrate so that a magnetization direction becomes parallel to the upper main surface of the first support substrate, a semiconductor chip disposed on the upper main surface of the first support substrate and having a magnetic field detection element configured to detect a magnetic field component in a specific direction, and a soft magnetic substance film disposed on the lower main surface of the first support substrate and extending in a direction parallel to the magnetization direction of the magnet.

Abstract: A magnetic substance detection sensor includes a support substrate, a magnet having a thickness, and disposed on one of an upper main surface and a lower main surface of the support substrate so that a magnetization direction becomes parallel to the upper main surface, and a semiconductor chip disposed on one of the upper main surface and the lower main surface, and having a magnetic field detection element to detect a magnetic field component in a specific direction. The magnetic field detection element is disposed outside a first space adjacent to the magnet in the magnetization direction and having the thickness, a second space adjacent to the magnet in a direction orthogonal to the magnetization direction, and a third space extending from the first space along the direction orthogonal to the specific direction.

Abstract: A semiconductor device includes a semiconductor substrate having a surface perpendicular to the first direction; a vertical Hall element formed in the semiconductor substrate, and including a magnetosensitive portion having a depth in the first direction, a width in the second direction, and a length in the third direction; and an excitation wiring extending in the third direction and disposed above the semiconductor substrate and at a position that overlaps the center position of the width of the magnetosensitive portion, and the value u derived from Expression (1) is 0.

Abstract: A semiconductor device includes a semiconductor substrate; a vertical Hall element including a magnetosensitive portion, and formed in the semiconductor substrate; and an excitation wiring provided above a surface of the semiconductor substrate and apart from the magnetosensitive portion. The excitation wiring is formed of a single wiring with a plurality of turns. The excitation wiring includes a plurality of main wiring portions arranged side by side, and apart from one another in an overlapping region that overlaps the magnetosensitive portion as viewed in plan view from a direction orthogonal to the surface of the semiconductor substrate; and auxiliary wiring portions connecting each of the plurality of main wiring portions to one another in series.

Abstract: A semiconductor device includes a semiconductor substrate: a vertical Hall element formed in the semiconductor substrate, and having a magnetosensitive portion; a first excitation wiring disposed above the magnetosensitive portion, and configured to apply a first calibration magnetic field (M1) to the magnetosensitive portion; and second excitation wirings disposed above the magnetosensitive portion on one side and on another side of the first excitation wiring, respectively, along the first excitation wiring as viewed in plan view from immediately above a front surface of the semiconductor substrate, and configured to apply second calibration magnetic fields (M2) to the magnetosensitive portion.

Abstract: A magnetic substance detection sensor includes a support substrate, a semiconductor chip provided on the support substrate and having a magnetic field detection element, a permanent magnet provided on the support substrate, and a resin encapsulation layer covering the semiconductor chip and the permanent magnet. The resin encapsulation layer has a first resin layer exposing the permanent magnet and covering the semiconductor chip, and a second resin layer continuously covering the permanent magnet and the first resin layer, and stress caused by curing contraction of the second resin layer is smaller than that of the first resin layer.

Abstract: A magnetic sensor includes a magneto-sensitive portion (105); an excitation wiring (110) formed in a wiring region above the magneto-sensitive portion (105) through intermediation of an insulating film (12), the excitation wiring (110) including a plurality of conductor portions (1101, 1102, 1103, 1104, and 1105) arranged in in order across at least one radial direction from a center axis of the magneto-sensitive portion (105); a current flowing through the excitation wiring (110) having a current density of which an absolute value becomes zero in a vicinity of a center of the magneto-sensitive portion (105) and continuously increases toward an outer side of the magneto-sensitive portion (105); and a magnetic field generated by the current flowing through the excitation wiring (110) in a direction vertical to the surface of the magneto-sensitive portion (105).

Abstract: A semiconductor device includes a semiconductor substrate 10 of a first conductivity type, a vertical Hall element 100 provided on the semiconductor substrate 10, and an excitation conductor 200 provided directly above the vertical Hall element 100 with an intermediation of an insulating film 30. The vertical Hall element 100 includes a semiconductor layer 101 of a second conductivity type provided on the semiconductor substrate 10, and a plurality of electrodes 111 through 115 each constituted from a high-concentration second conductivity type impurity region and provided on the surface of the semiconductor layer 101 along a straight line. A ratio WC/WH between a width WC of the excitation conductor 200 and a width WH of each of the plurality of electrodes 111 through 115 satisfies 0.3?WC/WH?1.0.

Abstract: According to one embodiment, a semiconductor light-emitting element includes a ring-shaped light-emitting portion provided on a substrate, a mode-control light waveguide of Si provided on an upper or a lower surface side of the light-emitting portion, and including at least two portions located close to the light-emitting portion, and an output light waveguide of Si provided on the upper or the lower surface side, and including a portion located close to the light-emitting portion. The mode-control light waveguide has a structure for coupling light traveling in one of a clockwise circulating mode and a counterclockwise circulating mode, and feeding back the light in the other of the clockwise circulating mode and the counterclockwise circulating mode.

Abstract: A semiconductor light-emitting device according to one embodiment includes a substrate, a first light reflection structure provided in contact with the substrate, a buried layer surrounding the first light reflection structure, an optical semiconductor structure including an active layer, provided above the first light reflection structure, a second light reflection structure provided above the optical semiconductor structure, and a pair of electrodes which supply current to the optical semiconductor structure. The surface of the first light reflection structure and the surface of the buried layer are included in the same plane.

Abstract: A wavelength filter of an embodiment includes: a first layer having a plurality of first regions containing a first material and a plurality of second regions containing a second material having a refractive index higher than that of the first material, each of the second regions provided between each of the first regions; a second layer provided on the first layer and containing the first material; and a third layer having a plurality of third regions containing the first material, each of the third regions provided on the second layer above each of the first regions, and a plurality of fourth regions containing the second material, each of the fourth regions provided between each of the third regions.