Abstract: A solid-state image pickup unit includes: a p-type compound semiconductor layer of a chalcopyrite structure; an electrode formed on the p-type compound semiconductor layer; and an n-type layer formed separately for each pixel, on a surface opposite to a light incident side of the p-type compound semiconductor layer.

Abstract: The present disclosure relates to a solid-state image capturing element, a manufacturing method therefor, and an electronic device, which are capable of controlling a thickness of a depletion layer. The solid-state image capturing element includes pixels each in which a photoelectric conversion film configured to perform photoelectric conversion on incident light and a fixed charge film configured to have a predetermined fixed charge are stacked on a semiconductor substrate. The technology of the present disclosure can be applied to, for example, back surface irradiation type solid-state image capturing elements, image capturing devices such as digital still cameras or video cameras, mobile terminal devices having an image capturing function, and electronic devices using a solid-state image capturing element as an image capturing unit.

Abstract: An image pickup element includes: a photoelectric conversion film provided on a semiconductor substrate and including a chalcopyrite-based compound; an insulating film provided on a light incident surface side of the photoelectric conversion film; and a conductive film provided on the insulating film.

Abstract: An image pickup element includes: a photoelectric conversion film provided on a semiconductor substrate and including a chalcopyrite-based compound; an insulating film provided on a light incident surface side of the photoelectric conversion film; and a conductive film provided on the insulating film.

Abstract: A solid-state image pickup unit includes: a p-type compound semiconductor layer of a chalcopyrite structure; an electrode formed on the p-type compound semiconductor layer; and an n-type layer formed separately for each pixel, on a surface opposite to a light incident side of the p-type compound semiconductor layer.

Abstract: A method to impede the constitution of the area wherein the silicide film that is defying to form on a gate electrode. Form an element isolation film, and then a gate dielectric film in a P-channel and an N-channel transistor forming region respectively. Then form a semiconductor film that constructs part of a gate electrode over the P-Type and the N-Type element regions through the element isolation film. Implant a dopant into the region, including the part over the P-channel transistor forming region and form a P-Type gate region, and then implant a dopant into the region, including the part over the N-channel transistor forming region and form a N-Type gate region. At this time, form the region so part of the P-Type gate region and the N-Type gate region overlap. Then, form the silicide film that constructs the part of the gate electrode over the semiconductor film.

Abstract: A method to impede the constitution of the area wherein the silicide film that is defying to form on a gate electrode. Form an element isolation film, and then a gate dielectric film in a P-channel and an N-channel transistor forming region respectively. Then form a semiconductor film that constructs part of a gate electrode over the P-Type and the N-Type element regions through the element isolation film. Implant a dopant into the region, including the part over the P-channel transistor forming region and form a P-Type gate region, and then implant a dopant into the region, including the part over the N-channel transistor forming region and form a N-Type gate region. At this time, form the region so part of the P-Type gate region and the N-Type gate region overlap. Then, form the silicide film that constructs the part of the gate electrode over the semiconductor film.