Abstract: A detection device for detecting a test substance which is capable of detecting a test substance and a sample substance with high sensitivity, an electrode substrate, a working electrode, an inspection tip, a method of detecting a test substance, and a method of detecting a sample substance are provided in which a reflective part (reflective layer) is disposed on the working electrode so as to reflect excitation light emitted from a light source and passing through the working electrode toward the working electrode.

Abstract: The present invention provides a method for electrochemically detecting a target substance and a method for electrochemically detecting an analyte using a probe holding substrate with a probe for trapping a target substance or an analyte held on the substrate body as well as a test chip and a detection set using the above detection methods.

Abstract: In order to provide a method of electrochemically detecting a target substance, a method of electrochemically detecting an analyte, and a detection set which have a theoretical advantage in the measurement sensitivity obtained by a conventional electrochemical detection method using a working electrode with a trapping substance immobilized, can reuse the working electrode, and can detect an analyte regardless of the size thereof, there is provided a method including: attracting the target substance containing a labeling substance in a liquid sample to a working electrode in which a trapping substance for trapping the target substance containing a labeling substance is not present; and electrochemically detecting the target substance containing a labeling substance.

Abstract: The core metal of a protein such as ferritin is used as a nucleus for crystallizing a silicone thin film and then the thus crystallized film is employed in the channel part of a thin-film transistor. By aligning the protein on the surface of amorphous silicone and heating, the crystallinity is controlled. In the case of ferritin, the core diameter of the protein is 7 mm. That is, this protein is highly even in size (i.e., the metal content). Thus, the amount of the protein to be deposited on the amorphous silicone surface can be accurately controlled by controlling the protein core density. Furthermore, the type of the core metal can be altered by chemical reactions and the above method is applicable not only to amorphous silicone but also to amorphous films of various types such as germanium. Thus, the amount of nickel required in crystallization is controlled by using a protein. Moreover, the distribution density of the nickel core is controlled to thereby conduct crystallization at a desired crystal size.

Abstract: A method for detecting an analyte, comprising: trapping an analyte in a sample by using a test chip, wherein the test chip comprises: a working electrode including a semiconductor layer, a probe being capable of trapping the analyte and being immobilized on the semiconductor layer, a counter electrode, and a reduction electrode for reducing an electrolyte contained in an electrolyte medium to be contacted with the working electrode and the counter electrode: irradiating, with a light for exciting the modulator, the modulator with which the analyte trapped by the probe has been modified, while the working electrode, the counter electrode and the reduction electrode are contacted with an electrolyte medium containing the electrolyte; measuring a current which due to movement of electrons from the photoexcited modulator to the working electrode, passes between the working electrode and the counter electrode, while the electrolyte contained in the electrolyte medium is reduced by the reduction electrode.

Abstract: A test chip for detecting an analyte modified with a modulator releasing electrons upon photoexcitation, comprising: semiconductor electrode part including a metal layer formed on a semiconductor layer; a probe immobilized on the metal layer, the probe trapping the analyte; and a counter electrode part including a conductive layer. A detection apparatus and a method for detecting an analyte are also disclosed.

Abstract: The core metal of a protein such as ferritin is used as a nucleus for crystallizing a silicone thin film and then the thus crystallized film is employed in the channel part of a thin-film transistor. By aligning the protein on the surface of amorphous silicone and heating, the crystallinity is controlled. In the case of ferritin, the core diameter of the protein is 7 mm. That is, this protein is highly even in size (i.e., the metal content). Thus, the amount of the protein to be deposited on the amorphous silicone surface can be accurately controlled by controlling the protein core density. Furthermore, the type of the core metal can be altered by chemical reactions and the above method is applicable not only to amorphous silicone but also to amorphous films of various types such as germanium. Thus, the amount of nickel required in crystallization is controlled by using a protein. Moreover, the distribution density of the nickel core is controlled to thereby conduct crystallization at a desired crystal size.

Abstract: A method for selectively arranging ferritin in a specified inorganic material part formed on a substrate is provided. The method for arranging ferritin of the present invention is characterized in that ferritin is selectively arranged on a part including titanium or silicon nitride (SiN) in an efficient manner by adding a nonionic surface active agent. Also, selective arrangement capability of ferritin can be markedly improved by modifying the N-terminus of ferritin with a certain peptide.

Abstract: A method for selectively arranging ferritin in a specified inorganic material part formed on a substrate is provided. The method for arranging ferritin of the present invention is characterized in that ferritin is selectively arranged on a part including titanium or silicon nitride (SiN) in an efficient manner by adding a nonionic surface active agent. Also, selective arrangement capability of ferritin can be markedly improved by modifying the N-terminus of ferritin with a certain peptide.

Abstract: An apparatus for forming a thin film on an article, wherein a film-forming gas is supplied from a gas supplying device to a vacuum container which can be evacuated by an exhausting device to reduce gas pressure in the container, an electric power is applied from a power applying device to the film-forming gas to produce plasma from the gas in which the thin film is formed on the article disposed in the vacuum container. The gas supplying device includes a gas supply member having a gas supply surface portion opposed to a film-forming surface of the article in the vacuum container. The gas supply member has a plurality of gas supply holes dispersedly formed at the gas supply surface portion. The power applying device includes a power applying electrode in the vacuum container, the electrode being disposed as surface portion opposed to the article.

Abstract: The invention provides a vacuum processing apparatus, in which a substantial installation area is smaller than that of a conventional vacuum processing apparatus having a plurality of processing chambers of the same size and the same number, and easy maintenance can be achieved. More specifically, the invention provides a vacuum processing apparatus including a plurality of processing chambers, which are provided with processing devices for effecting predetermined processing on a target object, can achieve predetermined internal pressures, and can accommodate the target object for effecting predetermined processing under the predetermined pressures. In the vacuum processing apparatus, the plurality of processing chambers are arranged around a central chamber provided for object transfer and being capable of achieving a predetermined internal pressure, and are connected with the central chamber.

Abstract: In a thin film forming method and an apparatus A for implementing the method, a deposition chamber 1 provided with a substrate holder 12 and a radical emitting device 2 continuing to the chamber 1 for emitting neutral radicals uniformly to a whole deposition target region of a deposition target substrate S held by the holder 12 are used. Deposition gas plasma PL1 is formed at the vicinity of the substrate S on the holder 12 by supplying a predetermined deposition gas into the chamber 1. Neutral radicals RA are produced by exciting and dissociating a predetermined radical material gas in the radical emitting device 2, and the radicals are uniformly emitted to the deposition target region of the substrate S for forming a predetermined thin film on the substrate S.

Abstract: A method of manufacturing a crystalline silicon base semiconductor thin film on a substrate, includes the steps of forming a thin film primarily made of silicon on the substrate by forming plasma of a film material gas containing at least a silicon base gas at the vicinity of the substrate; and crystallizing the silicon in the thin film primarily made of the silicon by emitting excited particles produced from an excited particle material gas to the substrate. At least one of the film material gas and the excited particle material gas contains an impurity gas for forming the silicon semiconductor, and thereby the crystalline silicon base semiconductor thin film is formed on the substrate.

Abstract: A film forming apparatus includes a silicon film forming vacuum chamber for forming a crystalline silicon film on a substrate; a film forming device provided for the vacuum chamber for forming a pre-film of the crystalline silicon film on a target surface of the substrate; and an energy beam irradiating device provided for the vacuum chamber for irradiating the pre-film with an energy beam for crystallizing the pre-film. This film forming apparatus produce a crystalline silicon film having a good quality as a semiconductor film for a TFT or the like with good productivity.

Abstract: A film forming apparatus includes a silicon film forming vacuum chamber for forming a crystalline silicon film on a substrate; a film forming device provided for the vacuum chamber for forming a pre-film of the crystalline silicon film on a target surface of the substrate; and an energy beam irradiating device provided for the vacuum chamber for irradiating the pre-film with an energy beam for crystallizing the pre-film. This film forming apparatus produce a crystalline silicon film having a good quality as a semiconductor film for a TFT or the like with good productivity.

Abstract: An insulating member is interposed between a film formation chamber container and a plasma chamber container. Both containers are adjacent to and communicated with each other. In the film formation chamber container, a base material holder is provided for holding the base material. Raw material gas is introduced into the plasma chamber container and ionized by high frequency electric discharge, to generate plasma. A high frequency electrode and a high frequency electric power source are provided as a plasma generating unit. There is provided a porous electrode 30, the electric potential of which is the same as that of the plasma chamber container 24, between both chambers 22, 24 to partition both chambers.

Abstract: There is provided a thin film forming apparatus in which plasma of high frequency is made of raw material gas in a film forming chamber 7, a thin film is formed on a surface of a substrate 12 in the film forming chamber 7 by the plasma of high frequency, and a characteristic of the thin film is controlled by irradiating ion beams 4 onto the surface of the substrate 12 at the same time, characterized in that: the substrate 12 is composed of a square plate having a regular square surface or a rectangular surface; and the thin film forming apparatus is provided with a high frequency electrode 13 for forming the plasma of high frequency into a cube or a rectangular parallelepiped to cover an overall surface of the substrate 12, on the surface side of the substrate 12.

Abstract: In a plasma-CVD method and apparatus, plasma is formed from a film material gas in a process chamber and, in the plasma, a film is deposited on a substrate disposed in the process chamber. Formation of the plasma from the material gas is performed by application of an rf-power prepared by effecting an amplitude modulation on a basic rf-power having a frequency in a range from 10 MHz to 200 MHz. A modulation frequency of the amplitude modulation is in a range from 1/1000 to 1/10 of the frequency of the basic rf-power. Alternatively, the rf-power is prepared by effecting on the basic rf-power a first amplitude modulation at a frequency in a range from 1/1000 to 1/10 of the frequency of the basic rf-power, and additionally effecting a second amplitude modulation on the modulated rf-power. A modulation frequency of the second amplitude modulation is in a range from 1/100 to 100 times the modulation frequency of the first amplitude modulation.

Abstract: In a plasma processing apparatus, wherein a power application electrode for generating plasma and an electrode opposed thereto are disposed in a process chamber which can be exhausted to attain a predetermined vacuum pressure, an electric power is applied to the power application electrode to generate the plasma from a process gas introduced between the electrodes, and intended plasma processing is effected on a substrate mounted on one of the electrodes in the plasma, the apparatus includes a particle discharge duct which surrounds a periphery and a rear side of the power application electrode and has an opening at a position neighboring to the periphery of the power application electrode, and an exhaust device connected to the duct at a position corresponding to a central portion of the rear side of the power application electrode.