Patents by Inventor Hiroyoshi Kokaku
Hiroyoshi Kokaku has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7217992Abstract: Semiconductor devices,-semiconductor wafers, and semiconductor modules are provided: wherein the semiconductor device has a small warp; damages at chip edge and cracks in a dropping test are scarcely generated; and the semiconductor device is superior in mounting reliability and mass producibility. The semiconductor device 17 comprising: a semiconductor chip 64; a porous stress relaxing layer 3 provided on the plane, whereon circuits and electrodes are formed, of the semiconductor chip; a circuit layer 2 provided on the stress relaxing layer and connected to the electrodes; and external terminals 10 provided on the circuit layer; wherein an organic protecting film 7 is formed on the plane, opposite to the stress relaxing layer, of the semiconductor chip, and respective side planes of the stress relaxing layer, the semiconductor chip 6, and the protecting film 7 are exposed outside on a same plane.Type: GrantFiled: June 7, 2004Date of Patent: May 15, 2007Assignee: Renesas Technology Corp.Inventors: Masahiko Ogino, Takumi Ueno, Shuji Eguchi, Akira Nagai, Toshiya Satoh, Toshiaki Ishii, Hiroyoshi Kokaku, Tadanori Segawa, Nobutake Tsuyuno, Asao Nishimura, Ichiro Anjoh
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Patent number: 7202570Abstract: A semiconductor device having a superior connection reliability is obtained by providing a buffer body for absorbing the difference of thermal expansion between the mounting substrate and the semiconductor element in a semiconductor package structure, even if an organic material is used for the mounting substrate. A film material is used as the body for buffering the thermal stress generated by the difference in thermal expansion between the mounting substrate and the semiconductor element. The film material has modulus of elasticity of at least 1 MPa in the reflow temperature range (200–250° C.).Type: GrantFiled: December 1, 2003Date of Patent: April 10, 2007Assignee: Renesas Technology Corp.Inventors: Akira Nagai, Shuji Eguchi, Masahiko Ogino, Masanori Segawa, Toshiak Ishii, Nobutake Tsuyuno, Hiroyoshi Kokaku, Rie Hattori, Makoto Morishima, Ichiro Anjoh, Kunihiro Tsubosaki, Chuichi Miyazaki, Makoto Kitano, Mamoru Mita, Norio Okabe
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Patent number: 7038325Abstract: In a semiconductor device having a three-layered buffer layer comprising core layer 1 having interconnected foams such as a three-dimensional reticular structure and adhesive layers 2 provided on both sides of the core layer as a stress buffer layer between semiconductor chip 5 and wiring 4 to lessen a thermal stress generated between the semiconductor device and the package substrate, where a thickness ratio of the core layer 1 to total buffer layer is at least 0.2, the production process can be simplified by using such a buffer layer, thereby improving the mass production capacity and enhancing the package reliability.Type: GrantFiled: April 23, 2004Date of Patent: May 2, 2006Assignees: Hitachi Cable, Ltd., Renesas Technology Corp.Inventors: Masahiko Ogino, Shuji Eguchi, Akira Nagai, Takumi Ueno, Masanori Segawa, Hiroyoshi Kokaku, Toshiaki Ishii, Ichiro Anjoh, Asao Nishimura, Chuichi Miyazaki, Mamoru Mita, Norio Okabe
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Patent number: 6919622Abstract: As the semiconductor chip is large-sized, highly integrated and speeded up, it becomes difficult to pack the semiconductor chip together with leads in a package. In view of this difficulty, there has been adopted the package structure called the “Lead-On-Chip” or “Chip-On-Lead” structure in which the semiconductor and the leads are stacked and packed. In the package of this structure, according to the present invention, the gap between the leading end portions of the inner leads and the semiconductor chip is made wider than that between the inner lead portions except the leading end portions and the semiconductor chip thereby to reduce the stray capacity, to improve the signal transmission rate and to reduce the electrical noises.Type: GrantFiled: February 10, 2004Date of Patent: July 19, 2005Assignee: Renesas Technology Corp.Inventors: Gen Murakami, Kunihiro Tsubosaki, Masahiro Ichitani, Kunihiko Nishi, Ichiro Anjo, Asao Nishimura, Makoto Kitano, Akihiro Yaguchi, Sueo Kawai, Masatsugu Ogata, Syuuji Eguchi, Hiroyoshi Kokaku, Masanori Segawa, Hiroshi Hozoji, Takashi Yokoyama, Noriyuki Kinjo, Aizo Kaneda, Junichi Saeki, Shozo Nakamura, Akio Hasebe, Hiroshi Kikuchi, Isamu Yoshida, Takashi Yamazaki, Kazuyoshi Oshima, Tetsuro Matsumoto
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Patent number: 6888230Abstract: Semiconductor devices, semiconductor wafers, and semiconductor modules are provided, wherein: the semiconductor device has a small warp; damage at the chip edge and cracks occurring in a dropping test are scarcely generated; and the semiconductor device is superior in mounting reliability and mass producibility. The semiconductor includes a semiconductor chip 64; a porous stress relaxing layer 3 provided on the plane, whereon circuits and electrodes are formed, of the semiconductor chip; a circuit layer 2 provided on the stress relaxing layer and connected to the electrodes; and external terminals 10 provided on the circuit layer; wherein an organic protecting film 7 is formed on the plane, opposite to the stress relaxing layer, of the semiconductor chip, and respective side planes of the stress relaxing layer, the semiconductor chip 6, and the protecting film 7 are exposed outside on the same plane.Type: GrantFiled: October 28, 1999Date of Patent: May 3, 2005Assignee: Renesas Technology Corp.Inventors: Masahiko Ogino, Takumi Ueno, Shuji Eguchi, Akira Nagai, Toshiya Satoh, Toshiaki Ishii, Hiroyoshi Kokaku, Tadanori Segawa, Nobutake Tsuyuno, Asao Nishimura, Ichiro Anjoh
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Patent number: 6878448Abstract: The present invention provides a biphenyl based epoxy resin comprising a curing agent and an inorganic filler containing an alkali alkaline earth metal oxide wherein the epoxy resin has a variation rate of hardness at 25° C. and a relative humidity of 50% for 72 hours of less than 10% and a variation rate of flow at 25° C. and a relative humidity of 20% or below for 72 hours of less than 20%.Type: GrantFiled: September 25, 2001Date of Patent: April 12, 2005Assignee: Hitachi, Ltd.Inventors: Toshiaki Ishii, Hiroyoshi Kokaku, Akira Nagai, Takao Miwa
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Publication number: 20040224149Abstract: The object of the present invention is provide a semiconductor device in semiconductor package configuration, characterized by excellent connection reliability ensured by incorporating a buffer for absorbing differences in thermal expansion rate between a mounting substrate and a semiconductor element even when an organic material is used for a mounting substrate.Type: ApplicationFiled: December 1, 2003Publication date: November 11, 2004Inventors: Akira Nagai, Shuji Eguchi, Masahiko Ogino, Masanori Segawa, Toshiak Ishii, Nobutake Tsuyuno, Hiroyoshi Kokaku, Rie Hattori, Makoto Morishima, Ichiro Anjoh, Kunihiro Tsubosaki, Chuichi Miyazaki, Makoto Kitano, Mamoru Mita, Norio Okabe
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Publication number: 20040217453Abstract: Semiconductor devices,-semiconductor wafers, and semiconductor modules are provided: wherein the semiconductor device has a small warp; damages at chip edge and cracks in a dropping test are scarcely generated; and the semiconductor device is superior in mounting reliability and mass producibility.Type: ApplicationFiled: June 7, 2004Publication date: November 4, 2004Inventors: Masahiko Ogino, Takumi Ueno, Shuji Eguchi, Akira Nagai, Toshiya Satoh, Toshiaki Ishii, Hiroyoshi Kokaku, Tadanori Segawa, Nobutake Tsuyuno, Asao Nishimura, Ichiro Anjoh
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Publication number: 20040195702Abstract: In a semiconductor device having a three-layered buffer layer comprising core layer 1 having interconnected foams such as a three-dimensional reticular structure and adhesive layers 2 provided on both sides of the core layer as a stress buffer layer between semiconductor chip 5 and wiring 4 to lessen a thermal stress generated between the semiconductor device and the package substrate, where a thickness ratio of the core layer 1 to total buffer layer is at least 0.2, the production process can be simplified by using such a buffer layer, thereby improving the mass production capacity and enhancing the package reliability.Type: ApplicationFiled: April 23, 2004Publication date: October 7, 2004Inventors: Masahiko Ogino, Shuji Eguchi, Akira Nagai, Takumi Ueno, Masanori Segawa, Hiroyoshi Kokaku, Toshiaki Ishii, Ichiro Anjoh, Asao Nishimura, Chuichi Miyazaki, Mamoru Mita, Norio Okabe
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Patent number: 6791194Abstract: A semiconductor device having a superior connection reliability is obtained by providing a buffer body for absorbing the difference of thermal expansion between the mounting substrate and the semiconductor element in a semiconductor package structure, even if an organic material is used for mounting substrate. A film material is used as the body for buffering the thermal stress generated by the difference in thermal expansion between the mounting substrate and the semiconductor element. The film material has modulus of elasticity of at least 1 MPa in the reflow temperature range (200-250° C.).Type: GrantFiled: January 28, 2000Date of Patent: September 14, 2004Assignees: Hitachi, Ltd., Hitachi Cable, Ltd.Inventors: Akira Nagai, Shuji Eguchi, Masahiko Ogino, Masanori Segawa, Toshiak Ishii, Nobutake Tsuyuno, Hiroyoshi Kokaku, Rie Hattori, Makoto Morishima, Ichiro Anjoh, Kunihiro Tsubosaki, Chuichi Miyazaki, Makoto Kitano, Mamoru Mita, Norio Okabe
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Publication number: 20040155323Abstract: As the semiconductor chip is large-sized, highly integrated and speeded up, it becomes difficult to pack the semiconductor chip together with leads in a package. In view of this difficulty, there has been adopted the package structure called the “Lead-On-Chip” or “Chip-On-Lead” structure in which the semiconductor and the leads are stacked and packed. In the package of this structure, according to the present invention, the gap between the leading end portions of the inner leads and the semiconductor chip is made wider than that between the inner lead portions except the leading end portions and the semiconductor chip thereby to reduce the stray capacity, to improve the signal transmission rate and to reduce the electrical noises.Type: ApplicationFiled: February 10, 2004Publication date: August 12, 2004Inventors: Gen Murakami, Kunihiro Tsubosaki, Masahiro Ichitani, Kunihiko Nishi, Ichiro Anjo, Asao Nishimura, Makoto Kitano, Akihiro Yaguchi, Sueo Kawai, Masatsugu Ogata, Syuuji Eguchi, Hiroyoshi Kokaku, Masanori Segawa, Hiroshi Hozoji, Takashi Yokoyama, Noriyuki Kinjo, Aizo Kaneda, Junichi Saeki, Shozo Nakamura, Akio Hasebe, Hiroshi Kikuchi, Isamu Yoshida, Takashi Yamazaki, Kazuyoshi Oshima, Tetsuro Matsumoto
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Patent number: 6720208Abstract: As the semiconductor chip is large-sized, highly integrated and speeded up, it becomes difficult to pack the semiconductor chip together with leads in a package. In view of this difficulty, there has been adopted the package structure called the “Lead-On-Chip” or “Chip-On-Lead” structure in which the semiconductor and the leads are stacked and packed. In the package of this structure, according to the present invention, the gap between the leading end portions of the inner leads and the semiconductor chip is made wider than that between the inner lead portions except the leading end portions and the semiconductor chip thereby to reduce the stray capacity, to improve the signal transmission rate and to reduce the electrical noises.Type: GrantFiled: December 19, 2002Date of Patent: April 13, 2004Assignee: Renesas Technology CorporationInventors: Gen Murakami, Kunihiro Tsubosaki, Masahiro Ichitani, Kunihiko Nishi, Ichiro Anjo, Asao Nishimura, Makoto Kitano, Akihiro Yaguchi, Sueo Kawai, Masatsugu Ogata, Syuuji Eguchi, Hiroyoshi Kokaku, Masanori Segawa, Hiroshi Hozoji, Takashi Yokoyama, Noriyuki Kinjo, Aizo Kaneda, Junichi Saeki, Shozo Nakamura, Akio Hasebe, Hiroshi Kikuchi, Isamu Yoshida, Takashi Yamazaki, Kazuyoshi Oshima, Tetsuro Matsumoto
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Publication number: 20030127712Abstract: As the semiconductor chip is large-sized, highly integrated and speeded up, it becomes difficult to pack the semiconductor chip together with leads in a package. In view of this difficulty, there has been adopted the package structure called the “Lead-On-Chip” or “Chip-On-Lead” structure in which the semiconductor and the leads are stacked and packed. In the package of this structure, according to the present invention, the gap between the leading end portions of the inner leads and the semiconductor chip is made wider than that between the inner lead portions except the leading end portions and the semiconductor chip thereby to reduce the stray capacity, to improve the signal transmission rate and to reduce the electrical noises.Type: ApplicationFiled: December 19, 2002Publication date: July 10, 2003Inventors: Gen Murakami, Kunihiro Tsubosaki, Masahiro Ichitani, Kunihiko Nishi, Ichiro Anjo, Asao Nishimura, Makoto Kitano, Akihiro Yaguchi, Sueo Kawai, Masatsugu Ogata, Syuuji Eguchi, Hiroyoshi Kokaku, Masanori Segawa, Hiroshi Hozoji, Takashi Yokoyama, Noriyuki Kinjo, Aizo Kaneda, Junichi Saeki, Shozo Nakamura, Akio Hasebe, Hiroshi Kikuchi, Isamu Yoshida, Takashi Yamazaki, Kazuyoshi Oshima, Tetsuro Matsumoto
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Patent number: 6531760Abstract: As the semiconductor chip is large-sized, highly integrated and speeded up, it becomes difficult to pack the semiconductor chip together with leads in a package. In view of this difficulty, there has been adopted the package structure called the “Lead-On-Chip” or “Chip-On-Lead” structure in which the semiconductor and the leads are stacked and packed. In the package of this structure, according to the present invention, the gap between the leading end portions of the inner leads and the semiconductor chip is made wider than that between the inner lead portions except the leading end portions and the semiconductor chip thereby to reduce the stray capacity, to improve the signal transmission rate and to reduce the electrical noises.Type: GrantFiled: April 25, 2000Date of Patent: March 11, 2003Inventors: Gen Murakami, Kunihiro Tsubosaki, Masahiro Ichitani, Kunihiko Nishi, Ichiro Anjo, Asao Nishimura, Makoto Kitano, Akihiro Yaguchi, Sueo Kawai, Masatsugu Ogata, Syuuji Eguchi, Hiroyoshi Kokaku, Masanori Segawa, Hiroshi Hozoji, Takashi Yokoyama, Noriyuki Kinjo, Aizo Kaneda, Junichi Saeki, Shozo Nakamura, Akio Hasebe, Hiroshi Kikuchi, Isamu Yoshida, Takashi Yamazaki, Kazuyoshi Oshima, Tetsuro Matsumoto
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Publication number: 20020158343Abstract: In a semiconductor device having a three-layered buffer layer comprising core layer 1 having interconnected foams such as a three-dimensional reticular structure and adhesive layers 2 proved on both sides of the core layer as a stress buffer layer between semiconductor chip 5 and wiring 4 to lessen a thermal stress generated between the semiconductor device and the package substrate, where a thickness ratio of core layer 1 to total buffer layer is at least 0.2, the production process can be simplified by using such a buffer layer, thereby improving the mass production capacity and enhancing the package reliability.Type: ApplicationFiled: April 30, 2002Publication date: October 31, 2002Inventors: Masahiko Ogino, Shuji Eguchi, Akira Nagai, Takumi Ueno, Masanori Segawa, Hiroyoshi Kokaku, Toshiaki Ishii, Ichiro Anjoh, Asao Nishimura, Chuichi Miyazaki, Mamoru Mita, Norio Okabe
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Publication number: 20020160185Abstract: A semiconductor device having a superior connection reliability is obtained by providing a buffer body for absorbing the difference of thermal expansion between the mounting substrate and the semiconductor element in a semiconductor package structure, even if an organic material is used for the mounting substrate. A film material is used as the body for buffering the thermal stress generated by the difference in thermal expansion between the mounting substrate and the semiconductor element. The film material has modulus of elasticity of at least 1 MPa in the reflow temperature range (200-250° C.).Type: ApplicationFiled: May 6, 2002Publication date: October 31, 2002Inventors: Akira Nagai, Shuji Eguchi, Masahiko Ogino, Masanori Segawa, Toshiak Ishii, Nobutake Tsuyuno, Hiroyoshi Kokaku, Rie Hattori, Makoto Morishima, Ichiro Anjoh, Kunihiro Tsubosaki, Chuichi Miyazaki, Makoto Kitano, Mamoru Mita, Norio Okabe
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Publication number: 20020146565Abstract: The present invention provides a biphenyl based epoxy resin comprising a curing agent and an inorganic filler containing an alkali earth metal oxide wherein the epoxy resin has a variation rate of hardness at 25° C. and a relative humidity of 50% for 72 hours of less than 10% and a variation rate of flow at 25° C. and a relative humidity of 20% or below for 72 hours of less than 20%.Type: ApplicationFiled: September 25, 2001Publication date: October 10, 2002Inventors: Toshiaki Ishll, Hiroyoshi Kokaku, Akira Nagai, Takao Miwa
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Patent number: 6433440Abstract: In a semiconductor device having a three-layered buffer layer comprising core layer 1 having interconnected foams such as a three-dimensional reticular structure and adhesive layers 2 provided on both sides of the core layer as a stress buffer layer between semiconductor chip 5 and wiring 4 to lessen a thermal stress generated between the semiconductor device and the package substrate, where a thickness ratio of core layer 1 to total buffer layer is at least 0.2, the production process can be simplified by using such a buffer layer, thereby improving the mass production capacity and enhancing the package reliability.Type: GrantFiled: June 5, 1998Date of Patent: August 13, 2002Assignees: Hitachi, Ltd., Hitachi Cable, Ltd.Inventors: Masahiko Ogino, Shuji Eguchi, Akira Nagai, Takumi Ueno, Masanori Segawa, Hiroyoshi Kokaku, Toshiaki Ishii, Ichiro Anjoh, Asao Nishimura, Chuichi Miyazaki, Mamoru Mita, Norio Okabe
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Patent number: 6326681Abstract: As the semiconductor chip is large-sized, highly integrated and speeded up, it becomes difficult to pack the semiconductor chip together with leads in a package. In view of this difficulty, there has been adopted the package structure called the “Lead-On-Chip” or “Chip-On-Lead” structure in which the semiconductor and the leads are stacked and packed. In the package of this structure, according to the present invention, the gap between the leading end portions of the inner leads and the semiconductor chip is made wider than that between the inner lead portions except the leading end portions and the semiconductor chip thereby to reduce the stray capacity, to improve the signal transmission rate and to reduce the electrical noises.Type: GrantFiled: January 13, 2000Date of Patent: December 4, 2001Assignee: Hitachi, LTDInventors: Gen Murakami, Kunihiro Tsubosaki, Masahiro Ichitani, Kunihiko Nishi, Ichiro Anjo, Asao Nishimura, Makoto Kitano, Akihiro Yaguchi, Sueo Kawai, Masatsugu Ogata, Syuuji Eguchi, Hiroyoshi Kokaku, Masanori Segawa, Hiroshi Hozoji, Takashi Yokoyama, Noriyuki Kinjo, Aizo Kaneda, Junichi Saeki, Shozo Nakamura, Akio Hasebe, Hiroshi Kikuchi, Isamu Yoshida, Takashi Yamazaki, Kazuyoshi Oshima, Tetsuro Matsumoto
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Patent number: 6303982Abstract: As the semiconductor chip is large-sized, highly integrated and speeded up, it becomes difficult to pack the semiconductor chip together with leads in a package. In view of this difficulty, there has been adopted the package structure called the “Lead-On-Chip” or “Chip-On-Lead” structure in which the semiconductor and the leads are stacked and packed. In the package of this structure, according to the present invention, the gap between the leading end portions of the inner leads and the semiconductor chip is made wider than that between the inner lead portions except the leading end portions and the semiconductor chip thereby to reduce the stray capacity, to improve the signal transmission rate and to reduce the electrical noises.Type: GrantFiled: January 30, 2001Date of Patent: October 16, 2001Assignee: Hitachi, Ltd.Inventors: Gen Murakami, Kunihiro Tsubosaki, Masahiro Ichitani, Kunihiko Nishi, Ichiro Anjo, Asao Nishimura, Makoto Kitano, Akihiro Yaguchi, Sueo Kawai, Masatsugu Ogata, Syuuji Eguchi, Hiroyoshi Kokaku, Masanori Segawa, Hiroshi Hozoji, Takashi Yokoyama, Noriyuki Kinjo, Aizo Kaneda, Junichi Saeki, Shozo Nakamura, Akio Hasebe, Hiroshi Kikuchi, Isamu Yoshida, Takashi Yamazaki, Kazuyoshi Oshima, Tetsuro Matsumoto